SG11201701990SA - High density fan out package structure - Google Patents
High density fan out package structureInfo
- Publication number
- SG11201701990SA SG11201701990SA SG11201701990SA SG11201701990SA SG11201701990SA SG 11201701990S A SG11201701990S A SG 11201701990SA SG 11201701990S A SG11201701990S A SG 11201701990SA SG 11201701990S A SG11201701990S A SG 11201701990SA SG 11201701990S A SG11201701990S A SG 11201701990SA
- Authority
- SG
- Singapore
- Prior art keywords
- high density
- package structure
- fan out
- out package
- density fan
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/63—Vias, e.g. via plugs
- H10W70/635—Through-vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/66—Conductive materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
- H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
- H10W72/07207—Temporary substrates, e.g. removable substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
- H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
- H10W72/07307—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating the auxiliary member being a temporary substrate, e.g. a removable substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/221—Structures or relative sizes
- H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
- H10W90/794—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between a chip and a stacked insulating package substrate, interposer or RDL
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462073804P | 2014-10-31 | 2014-10-31 | |
| US14/693,820 US10157823B2 (en) | 2014-10-31 | 2015-04-22 | High density fan out package structure |
| PCT/US2015/048514 WO2016069112A1 (en) | 2014-10-31 | 2015-09-04 | High density fan out package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201701990SA true SG11201701990SA (en) | 2017-05-30 |
Family
ID=55853498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201701990SA SG11201701990SA (en) | 2014-10-31 | 2015-09-04 | High density fan out package structure |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10157823B2 (https=) |
| EP (1) | EP3213345B1 (https=) |
| JP (1) | JP6672285B2 (https=) |
| KR (1) | KR102440270B1 (https=) |
| CN (1) | CN107078119B (https=) |
| BR (1) | BR112017008727B1 (https=) |
| SG (1) | SG11201701990SA (https=) |
| WO (1) | WO2016069112A1 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9728507B2 (en) * | 2011-07-19 | 2017-08-08 | Pfg Ip Llc | Cap chip and reroute layer for stacked microelectronic module |
| US20170047276A1 (en) * | 2015-08-13 | 2017-02-16 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
| US9761509B2 (en) * | 2015-12-29 | 2017-09-12 | United Microelectronics Corp. | Semiconductor device with throgh-substrate via and method for fabrication the semiconductor device |
| US10141198B2 (en) * | 2016-07-08 | 2018-11-27 | Dyi-chung Hu | Electronic package and manufacturing method thereof |
| KR102596788B1 (ko) * | 2016-12-30 | 2023-10-31 | 인텔 코포레이션 | 팬 아웃 스케일링을 위한 필러 및 비아 접속부를 구비한 고밀도 상호접속 층을 가진 패키지 기판 |
| US10050021B1 (en) * | 2017-02-16 | 2018-08-14 | Nanya Technology Corporation | Die device, semiconductor device and method for making the same |
| KR102530568B1 (ko) * | 2017-10-23 | 2023-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 팬-아웃 상호연결부 통합 공정들 및 구조들 |
| DE102018127448B4 (de) | 2017-11-30 | 2023-06-22 | Taiwan Semiconductor Manufacturing Co. Ltd. | Metallschienenleiter für nicht-planare Halbleiter-Bauelemente |
| US10700207B2 (en) | 2017-11-30 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device integrating backside power grid and related integrated circuit and fabrication method |
| US10804254B2 (en) * | 2018-06-29 | 2020-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out package with cavity substrate |
| US20200212536A1 (en) * | 2018-12-31 | 2020-07-02 | Texas Instruments Incorporated | Wireless communication device with antenna on package |
| JP7335036B2 (ja) * | 2019-03-29 | 2023-08-29 | ラピスセミコンダクタ株式会社 | 半導体パッケージの製造方法 |
| KR102615198B1 (ko) | 2019-10-15 | 2023-12-18 | 삼성전자주식회사 | 반도체 패키지 |
| KR102765303B1 (ko) | 2019-12-31 | 2025-02-07 | 삼성전자주식회사 | 반도체 패키지 |
| US12166003B2 (en) * | 2020-04-03 | 2024-12-10 | Macom Technology Solutions Holdings, Inc. | RF amplifier devices including top side contacts and methods of manufacturing |
| US11356070B2 (en) | 2020-06-01 | 2022-06-07 | Wolfspeed, Inc. | RF amplifiers having shielded transmission line structures |
| US12500562B2 (en) | 2020-04-03 | 2025-12-16 | Macom Technology Solutions Holdings, Inc. | RF amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections |
| US11302662B2 (en) * | 2020-05-01 | 2022-04-12 | Nanya Technology Corporation | Semiconductor package with air gap and manufacturing method thereof |
| CN114743942B (zh) * | 2021-01-07 | 2026-02-10 | 联华电子股份有限公司 | 混合式接合结构及其制作方法 |
| US11682607B2 (en) * | 2021-02-01 | 2023-06-20 | Qualcomm Incorporated | Package having a substrate comprising surface interconnects aligned with a surface of the substrate |
| KR102932521B1 (ko) | 2021-03-09 | 2026-03-04 | 삼성전자주식회사 | 반도체 패키지 |
| CN117546291A (zh) * | 2021-06-11 | 2024-02-09 | 株式会社村田制作所 | 半导体装置 |
| KR20230019351A (ko) | 2021-07-30 | 2023-02-08 | 삼성전자주식회사 | 반도체 패키지 |
| US12148688B2 (en) | 2023-02-13 | 2024-11-19 | Dyi-chung Hu | Semiconductor substrate and manufacturing method thereof |
| TWI884561B (zh) * | 2023-02-13 | 2025-05-21 | 胡迪群 | 半導體基板及其製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3817463B2 (ja) * | 2001-11-12 | 2006-09-06 | 新光電気工業株式会社 | 多層配線基板の製造方法 |
| US6706625B1 (en) * | 2002-12-06 | 2004-03-16 | Chartered Semiconductor Manufacturing Ltd. | Copper recess formation using chemical process for fabricating barrier cap for lines and vias |
| US6927159B2 (en) * | 2003-05-27 | 2005-08-09 | Texas Instruments Incorporated | Methods for providing improved layer adhesion in a semiconductor device |
| TWI286372B (en) | 2003-08-13 | 2007-09-01 | Phoenix Prec Technology Corp | Semiconductor package substrate with protective metal layer on pads formed thereon and method for fabricating the same |
| US9460951B2 (en) * | 2007-12-03 | 2016-10-04 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of wafer level package integration |
| US8513119B2 (en) * | 2008-12-10 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming bump structure having tapered sidewalls for stacked dies |
| US8441124B2 (en) | 2010-04-29 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
| US9048233B2 (en) * | 2010-05-26 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package systems having interposers |
| US8330274B2 (en) * | 2010-09-29 | 2012-12-11 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| US20120282767A1 (en) | 2011-05-05 | 2012-11-08 | Stmicroelectronics Pte Ltd. | Method for producing a two-sided fan-out wafer level package with electrically conductive interconnects, and a corresponding semiconductor package |
| KR101828490B1 (ko) | 2011-08-30 | 2018-02-12 | 삼성전자주식회사 | 관통전극을 갖는 반도체 소자 및 그 제조방법 |
| US8552556B1 (en) | 2011-11-22 | 2013-10-08 | Amkor Technology, Inc. | Wafer level fan out package |
| US8716859B2 (en) * | 2012-01-10 | 2014-05-06 | Intel Mobile Communications GmbH | Enhanced flip chip package |
| US8779559B2 (en) * | 2012-02-27 | 2014-07-15 | Qualcomm Incorporated | Structure and method for strain-relieved TSV |
| US9385006B2 (en) * | 2012-06-21 | 2016-07-05 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming an embedded SOP fan-out package |
| KR20140024674A (ko) * | 2012-08-20 | 2014-03-03 | 삼성전자주식회사 | 관통 비아 구조체 및 재배선 구조체를 갖는 반도체 소자 |
| US9006101B2 (en) | 2012-08-31 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structure and method |
| US8993380B2 (en) | 2013-03-08 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for 3D IC package |
-
2015
- 2015-04-22 US US14/693,820 patent/US10157823B2/en active Active
- 2015-09-04 WO PCT/US2015/048514 patent/WO2016069112A1/en not_active Ceased
- 2015-09-04 BR BR112017008727-8A patent/BR112017008727B1/pt active IP Right Grant
- 2015-09-04 KR KR1020177011236A patent/KR102440270B1/ko active Active
- 2015-09-04 SG SG11201701990SA patent/SG11201701990SA/en unknown
- 2015-09-04 JP JP2017521532A patent/JP6672285B2/ja active Active
- 2015-09-04 EP EP15767632.1A patent/EP3213345B1/en active Active
- 2015-09-04 CN CN201580058661.2A patent/CN107078119B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017534177A (ja) | 2017-11-16 |
| BR112017008727B1 (pt) | 2022-06-28 |
| CN107078119A (zh) | 2017-08-18 |
| US10157823B2 (en) | 2018-12-18 |
| KR20170077133A (ko) | 2017-07-05 |
| KR102440270B1 (ko) | 2022-09-02 |
| US20160126173A1 (en) | 2016-05-05 |
| WO2016069112A1 (en) | 2016-05-06 |
| JP6672285B2 (ja) | 2020-03-25 |
| EP3213345B1 (en) | 2021-01-13 |
| BR112017008727A2 (pt) | 2017-12-19 |
| CN107078119B (zh) | 2021-05-14 |
| EP3213345A1 (en) | 2017-09-06 |
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| TWI561157B (en) | Heat dissipation structure |