SG11201608834SA - Method for evaluating soi substrate - Google Patents

Method for evaluating soi substrate

Info

Publication number
SG11201608834SA
SG11201608834SA SG11201608834SA SG11201608834SA SG11201608834SA SG 11201608834S A SG11201608834S A SG 11201608834SA SG 11201608834S A SG11201608834S A SG 11201608834SA SG 11201608834S A SG11201608834S A SG 11201608834SA SG 11201608834S A SG11201608834S A SG 11201608834SA
Authority
SG
Singapore
Prior art keywords
soi substrate
evaluating
evaluating soi
substrate
soi
Prior art date
Application number
SG11201608834SA
Inventor
Tsuyoshi Ohtsuki
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of SG11201608834SA publication Critical patent/SG11201608834SA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
SG11201608834SA 2014-05-14 2015-02-25 Method for evaluating soi substrate SG11201608834SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014100758A JP6102823B2 (en) 2014-05-14 2014-05-14 Method for evaluating SOI substrate
PCT/JP2015/000943 WO2015173995A1 (en) 2014-05-14 2015-02-25 Method for evaluating soi substrate

Publications (1)

Publication Number Publication Date
SG11201608834SA true SG11201608834SA (en) 2016-11-29

Family

ID=54479553

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201608834SA SG11201608834SA (en) 2014-05-14 2015-02-25 Method for evaluating soi substrate

Country Status (8)

Country Link
US (1) US9780006B2 (en)
EP (1) EP3144965B1 (en)
JP (1) JP6102823B2 (en)
KR (1) KR102185647B1 (en)
CN (1) CN106415806B (en)
SG (1) SG11201608834SA (en)
TW (1) TWI609189B (en)
WO (1) WO2015173995A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6931708B2 (en) * 2017-02-10 2021-09-08 グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. How to evaluate semiconductor structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233946A (en) * 1988-07-23 1990-02-05 Nec Corp Semiconductor device
JP2001060676A (en) * 1999-08-20 2001-03-06 Mitsubishi Materials Silicon Corp Computing method of interface state density
KR100646296B1 (en) * 2001-09-12 2006-11-23 닛본 덴끼 가부시끼가이샤 Semiconductor device and production method therefor
FR2860341B1 (en) 2003-09-26 2005-12-30 Soitec Silicon On Insulator METHOD FOR MANUFACTURING LOWERED LOWER MULTILAYER STRUCTURE
WO2005031842A2 (en) 2003-09-26 2005-04-07 Universite Catholique De Louvain Method of manufacturing a multilayer semiconductor structure with reduced ohmic losses
WO2006001156A1 (en) * 2004-06-25 2006-01-05 Shin-Etsu Handotai Co., Ltd. Method for evaluating soi wafer
JP4419710B2 (en) * 2004-06-25 2010-02-24 信越半導体株式会社 Evaluation method of SOI wafer
CN101506810B (en) * 2005-10-24 2013-06-05 卡德思设计规划公司 Timing, noise, and power analysis of integrated circuits
JP2007324194A (en) * 2006-05-30 2007-12-13 Shin Etsu Handotai Co Ltd Evaluation method of soi wafer
JP4776598B2 (en) * 2007-08-23 2011-09-21 株式会社アドバンテスト Management method, management apparatus, and device manufacturing method
JP2009231376A (en) 2008-03-19 2009-10-08 Shin Etsu Handotai Co Ltd Soi wafer and semiconductor device, and method of manufacturing the soi wafer
JP5532680B2 (en) * 2009-05-27 2014-06-25 信越半導体株式会社 Manufacturing method of SOI wafer and SOI wafer
CN101702627B (en) * 2009-10-29 2012-10-03 华东师范大学 CMOS radio frequency (RF) switch based on silicon-on-insulator (SOI) technology

Also Published As

Publication number Publication date
KR20170003554A (en) 2017-01-09
JP6102823B2 (en) 2017-03-29
EP3144965B1 (en) 2020-11-25
JP2015220257A (en) 2015-12-07
KR102185647B1 (en) 2020-12-02
CN106415806A (en) 2017-02-15
WO2015173995A1 (en) 2015-11-19
TWI609189B (en) 2017-12-21
CN106415806B (en) 2019-06-04
US9780006B2 (en) 2017-10-03
US20170047258A1 (en) 2017-02-16
EP3144965A4 (en) 2018-01-10
TW201543049A (en) 2015-11-16
EP3144965A1 (en) 2017-03-22

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