SG11201601133XA - Method of controlled crack propagation for material cleavage using electromagnetic forces - Google Patents

Method of controlled crack propagation for material cleavage using electromagnetic forces

Info

Publication number
SG11201601133XA
SG11201601133XA SG11201601133XA SG11201601133XA SG11201601133XA SG 11201601133X A SG11201601133X A SG 11201601133XA SG 11201601133X A SG11201601133X A SG 11201601133XA SG 11201601133X A SG11201601133X A SG 11201601133XA SG 11201601133X A SG11201601133X A SG 11201601133XA
Authority
SG
Singapore
Prior art keywords
crack propagation
electromagnetic forces
controlled crack
material cleavage
cleavage
Prior art date
Application number
SG11201601133XA
Other languages
English (en)
Inventor
Andrei T Iancu
Friedrich B Prinz
Original Assignee
Univ Leland Stanford Junior
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Leland Stanford Junior filed Critical Univ Leland Stanford Junior
Publication of SG11201601133XA publication Critical patent/SG11201601133XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
SG11201601133XA 2013-08-29 2014-08-27 Method of controlled crack propagation for material cleavage using electromagnetic forces SG11201601133XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361871820P 2013-08-29 2013-08-29
PCT/US2014/052846 WO2015031444A1 (fr) 2013-08-29 2014-08-27 Procédé de propagation de fissure contrôlée pour clivage de matériau au moyen de forces électromagnétiques

Publications (1)

Publication Number Publication Date
SG11201601133XA true SG11201601133XA (en) 2016-03-30

Family

ID=51494542

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201601133XA SG11201601133XA (en) 2013-08-29 2014-08-27 Method of controlled crack propagation for material cleavage using electromagnetic forces

Country Status (10)

Country Link
US (1) US9659764B2 (fr)
EP (1) EP3039711A1 (fr)
JP (1) JP2016531833A (fr)
KR (1) KR20160047496A (fr)
CN (1) CN105493247A (fr)
AU (1) AU2014311321A1 (fr)
MX (1) MX2016002284A (fr)
PH (1) PH12016500319A1 (fr)
SG (1) SG11201601133XA (fr)
WO (1) WO2015031444A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9718215B2 (en) 2015-04-15 2017-08-01 Halo Industries, Inc. Capacitive clamping process for cleaving work pieces using crack propagation
FR3054930B1 (fr) 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
DE102017009136A1 (de) * 2017-09-28 2019-03-28 Hochschule Mittweida (Fh) Verfahren zum Trennen und Ablösen von Scheiben von einem Rohling aus einem sprödharten Material
US10940611B2 (en) 2018-07-26 2021-03-09 Halo Industries, Inc. Incident radiation induced subsurface damage for controlled crack propagation in material cleavage
WO2020023929A1 (fr) * 2018-07-26 2020-01-30 Halo Industries, Inc. Dommage souterrain induit par un rayonnement incident pour propagation de fissure contrôlée dans le clivage de matériau

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6146979A (en) * 1997-05-12 2000-11-14 Silicon Genesis Corporation Pressurized microbubble thin film separation process using a reusable substrate
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
DE19834447A1 (de) * 1998-07-30 2000-02-10 Wacker Chemie Gmbh Verfahren zum Behandeln von Halbleitermaterial
DE19955824A1 (de) * 1999-11-20 2001-06-13 Schott Spezialglas Gmbh Verfahren und Vorrichtung zum Schneiden eines Werkstückes aus sprödbrüchigem Werkstoff
US6717212B2 (en) * 2001-06-12 2004-04-06 Advanced Micro Devices, Inc. Leaky, thermally conductive insulator material (LTCIM) in semiconductor-on-insulator (SOI) structure
WO2003021663A1 (fr) * 2001-09-02 2003-03-13 Borealis Technical Limited Separation de materiaux en systeme sandwich pour la realisation d'electrodes
KR100745577B1 (ko) * 2005-12-29 2007-08-03 주식회사 탑 엔지니어링 자기식 압력 조절 스크라이버
US7932164B2 (en) * 2008-03-17 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate by using monitor substrate to obtain optimal energy density for laser irradiation of single crystal semiconductor layers
EP2105957A3 (fr) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Procédé de fabrication d'un substrat SOI et procédé de fabrication d'un dispositif semi-conducteur
CN102574232A (zh) * 2009-09-29 2012-07-11 皮可钻机公司 切割基板的方法和用于切割的设备
DE102010025968B4 (de) * 2010-07-02 2016-06-02 Schott Ag Erzeugung von Mikrolöchern
US8637382B2 (en) * 2011-08-01 2014-01-28 Silicon Genesis Corporation Layer transfer of films utilizing thermal flux regime for energy controlled cleaving

Also Published As

Publication number Publication date
AU2014311321A1 (en) 2016-03-10
KR20160047496A (ko) 2016-05-02
US20150060509A1 (en) 2015-03-05
WO2015031444A1 (fr) 2015-03-05
MX2016002284A (es) 2016-06-10
CN105493247A (zh) 2016-04-13
US9659764B2 (en) 2017-05-23
EP3039711A1 (fr) 2016-07-06
JP2016531833A (ja) 2016-10-13
PH12016500319A1 (en) 2016-05-16

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