SG11201507942PA - Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor - Google Patents

Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor

Info

Publication number
SG11201507942PA
SG11201507942PA SG11201507942PA SG11201507942PA SG11201507942PA SG 11201507942P A SG11201507942P A SG 11201507942PA SG 11201507942P A SG11201507942P A SG 11201507942PA SG 11201507942P A SG11201507942P A SG 11201507942PA SG 11201507942P A SG11201507942P A SG 11201507942PA
Authority
SG
Singapore
Prior art keywords
oxide film
metal oxide
effect transistor
field
coating liquid
Prior art date
Application number
SG11201507942PA
Inventor
Yuki Nakamura
Naoyuki Ueda
Shinji Matsumoto
Mikiko Takada
Yuji Sone
Ryoichi Saotome
Sadanori Arae
Yukiko Abe
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of SG11201507942PA publication Critical patent/SG11201507942PA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24Electrically-conducting paints
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1292Multistep manufacturing methods using liquid deposition, e.g. printing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66969Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SG11201507942PA 2013-03-29 2014-03-26 Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor SG11201507942PA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013072954 2013-03-29
JP2014042911 2014-03-05
JP2014058359A JP6454974B2 (en) 2013-03-29 2014-03-20 Metal oxide film forming coating solution, metal oxide film manufacturing method, and field effect transistor manufacturing method
PCT/JP2014/059695 WO2014157733A1 (en) 2013-03-29 2014-03-26 Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor

Publications (1)

Publication Number Publication Date
SG11201507942PA true SG11201507942PA (en) 2015-10-29

Family

ID=51624688

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201507942PA SG11201507942PA (en) 2013-03-29 2014-03-26 Coating liquid for forming metal oxide film, metal oxide film, field-effect transistor, and method for producing field-effect transistor

Country Status (9)

Country Link
US (1) US9748097B2 (en)
EP (1) EP2962327B1 (en)
JP (1) JP6454974B2 (en)
KR (1) KR101835194B1 (en)
CN (1) CN105190854B (en)
BR (1) BR112015024759A2 (en)
SG (1) SG11201507942PA (en)
TW (1) TWI599622B (en)
WO (1) WO2014157733A1 (en)

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EP3125296B1 (en) * 2015-07-30 2020-06-10 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
JP6828293B2 (en) 2015-09-15 2021-02-10 株式会社リコー A coating liquid for forming an n-type oxide semiconductor film, a method for producing an n-type oxide semiconductor film, and a method for producing a field-effect transistor.
US10269293B2 (en) 2015-10-23 2019-04-23 Ricoh Company, Ltd. Field-effect transistor (FET) having gate oxide insulating layer including SI and alkaline earth elements, and display element, image display and system including FET
US10312373B2 (en) 2015-11-17 2019-06-04 Ricoh Company, Ltd. Field-effect transistor (FET) having oxide insulating layer disposed on gate insulating film and between source and drain electrodes, and display element, display and system including said FET, and method of manufacturing said FET
JP6607013B2 (en) 2015-12-08 2019-11-20 株式会社リコー Field effect transistor, display element, image display device, and system
JP2017105013A (en) 2015-12-08 2017-06-15 株式会社リコー Gas barrier laminate, semiconductor device, display element, display device and system
US10600916B2 (en) 2015-12-08 2020-03-24 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
US10170635B2 (en) 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
JP6907512B2 (en) * 2015-12-15 2021-07-21 株式会社リコー Manufacturing method of field effect transistor
JP6665536B2 (en) 2016-01-12 2020-03-13 株式会社リコー Oxide semiconductor
SG11201806226WA (en) 2016-02-01 2018-08-30 Ricoh Co Ltd Field effect transistor, method for manufacturing same, display element, display device, and system
JP6701835B2 (en) 2016-03-11 2020-05-27 株式会社リコー Field effect transistor, display element, image display device, and system
US10818705B2 (en) 2016-03-18 2020-10-27 Ricoh Company, Ltd. Method for manufacturing a field effect transistor, method for manufacturing a volatile semiconductor memory element, method for manufacturing a non-volatile semiconductor memory element, method for manufacturing a display element, method for manufacturing an image display device, and method for manufacturing a system
EP3432349A4 (en) 2016-03-18 2019-03-20 Ricoh Company, Ltd. Method for manufacturing a field effect transistor
CN105914150A (en) * 2016-04-29 2016-08-31 京东方科技集团股份有限公司 Film transistor and the manufacturing method thereof, array substrate and the manufacturing method of, display panel and display apparatus
JP2018160670A (en) * 2017-03-21 2018-10-11 株式会社リコー Coating liquid for forming metal oxide film, oxide film, field-effect transistor, and manufacturing method thereof
JP7305933B2 (en) * 2018-07-23 2023-07-11 株式会社リコー Coating solution for forming metal oxide film, oxide insulator film, field effect transistor, display device, image display device, and system
JP2020088300A (en) * 2018-11-30 2020-06-04 株式会社リコー Coating liquid for forming oxide, manufacturing method of oxide film, and manufacturing method of field effect transistor
CN111370495B (en) * 2018-12-26 2022-05-03 Tcl科技集团股份有限公司 Thin film transistor active layer ink and preparation method of thin film transistor
JP7326795B2 (en) 2019-03-20 2023-08-16 株式会社リコー FIELD EFFECT TRANSISTOR, DISPLAY DEVICE, IMAGE DISPLAY DEVICE, AND SYSTEM
CN111088484A (en) * 2019-11-14 2020-05-01 Tcl华星光电技术有限公司 Method for preparing metal oxide film
CN112980234B (en) * 2019-12-17 2022-12-23 山东海科创新研究院有限公司 Dimethyl carbonate azeotropic solvent composition, preparation method thereof, automobile low-temperature baking varnish formula and application
CN111678332B (en) * 2020-05-12 2022-03-22 首钢集团有限公司 Alloy baking method for reducing blockage rate of burner

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Also Published As

Publication number Publication date
CN105190854B (en) 2018-01-30
EP2962327A4 (en) 2016-04-06
CN105190854A (en) 2015-12-23
KR20150135480A (en) 2015-12-02
BR112015024759A2 (en) 2017-07-18
WO2014157733A1 (en) 2014-10-02
EP2962327A1 (en) 2016-01-06
TWI599622B (en) 2017-09-21
US9748097B2 (en) 2017-08-29
JP6454974B2 (en) 2019-01-23
US20160042947A1 (en) 2016-02-11
JP2015181141A (en) 2015-10-15
KR101835194B1 (en) 2018-04-13
EP2962327B1 (en) 2019-09-11
TW201439227A (en) 2014-10-16

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