SG11201504342SA - Quartz upper and lower domes - Google Patents

Quartz upper and lower domes

Info

Publication number
SG11201504342SA
SG11201504342SA SG11201504342SA SG11201504342SA SG11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA SG 11201504342S A SG11201504342S A SG 11201504342SA
Authority
SG
Singapore
Prior art keywords
lower domes
quartz upper
quartz
domes
Prior art date
Application number
SG11201504342SA
Other languages
English (en)
Inventor
Anzhong Chang
Paul Brillhart
Mehmet Tugrul Samir
Anh N Nguyen
Kailash Kiran Patalay
Surajit Kumar
Steve Aboagye
David K Carlson
Satheesh Kuppurao
Joseph M Ranish
Oleg Serebryanov
Dongming Iu
Shu-Kwan Lau
Zouming Zhu
Herman Diniz
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201504342SA publication Critical patent/SG11201504342SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201504342SA 2013-01-16 2013-12-18 Quartz upper and lower domes SG11201504342SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361753410P 2013-01-16 2013-01-16
US201361780447P 2013-03-13 2013-03-13
PCT/US2013/076295 WO2014113179A1 (en) 2013-01-16 2013-12-18 Quartz upper and lower domes

Publications (1)

Publication Number Publication Date
SG11201504342SA true SG11201504342SA (en) 2015-08-28

Family

ID=51165213

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201708105UA SG10201708105UA (en) 2013-01-16 2013-12-18 Quartz upper and lower domes
SG11201504342SA SG11201504342SA (en) 2013-01-16 2013-12-18 Quartz upper and lower domes

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201708105UA SG10201708105UA (en) 2013-01-16 2013-12-18 Quartz upper and lower domes

Country Status (7)

Country Link
US (2) US9768043B2 (ko)
JP (2) JP6388876B2 (ko)
KR (1) KR20150108392A (ko)
CN (3) CN107658245A (ko)
SG (2) SG10201708105UA (ko)
TW (1) TWI638070B (ko)
WO (1) WO2014113179A1 (ko)

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US12084770B2 (en) * 2020-08-18 2024-09-10 Globalwafers Co., Ltd. Window for chemical vapor deposition systems and related methods
CN114686849B (zh) * 2020-12-31 2023-12-01 拓荆科技股份有限公司 制造半导体薄膜的装置和方法
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US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
KR20230122133A (ko) * 2021-05-11 2023-08-22 어플라이드 머티어리얼스, 인코포레이티드 에피택시 및 cvd 챔버용 가스 인젝터
KR20230012803A (ko) * 2021-07-16 2023-01-26 주성엔지니어링(주) 기판처리장치용 상부돔 및 기판처리장치
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Also Published As

Publication number Publication date
JP2016509751A (ja) 2016-03-31
US20180005856A1 (en) 2018-01-04
CN104885192B (zh) 2018-03-27
TW201432103A (zh) 2014-08-16
US9768043B2 (en) 2017-09-19
CN104885192A (zh) 2015-09-02
CN108364889A (zh) 2018-08-03
TWI638070B (zh) 2018-10-11
US20140199056A1 (en) 2014-07-17
SG10201708105UA (en) 2017-11-29
JP2019009453A (ja) 2019-01-17
WO2014113179A1 (en) 2014-07-24
JP6388876B2 (ja) 2018-09-12
KR20150108392A (ko) 2015-09-25
CN107658245A (zh) 2018-02-02

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