SG11201502614VA - Crystalline semiconductor manufacturing method and crystalline semiconductor manufacturing apparatus - Google Patents

Crystalline semiconductor manufacturing method and crystalline semiconductor manufacturing apparatus

Info

Publication number
SG11201502614VA
SG11201502614VA SG11201502614VA SG11201502614VA SG11201502614VA SG 11201502614V A SG11201502614V A SG 11201502614VA SG 11201502614V A SG11201502614V A SG 11201502614VA SG 11201502614V A SG11201502614V A SG 11201502614VA SG 11201502614V A SG11201502614V A SG 11201502614VA
Authority
SG
Singapore
Prior art keywords
semiconductor manufacturing
crystalline semiconductor
manufacturing apparatus
crystalline
semiconductor
Prior art date
Application number
SG11201502614VA
Other languages
English (en)
Inventor
Suk-Hwan Chung
Junichi Shida
Masashi Machida
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of SG11201502614VA publication Critical patent/SG11201502614VA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686Pulsed laser beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
SG11201502614VA 2012-10-05 2013-10-02 Crystalline semiconductor manufacturing method and crystalline semiconductor manufacturing apparatus SG11201502614VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012223680A JP5904590B2 (ja) 2012-10-05 2012-10-05 結晶質半導体の製造方法および結晶質半導体の製造装置
PCT/JP2013/076814 WO2014054687A1 (ja) 2012-10-05 2013-10-02 結晶質半導体の製造方法および結晶質半導体の製造装置

Publications (1)

Publication Number Publication Date
SG11201502614VA true SG11201502614VA (en) 2015-05-28

Family

ID=50435009

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201502614VA SG11201502614VA (en) 2012-10-05 2013-10-02 Crystalline semiconductor manufacturing method and crystalline semiconductor manufacturing apparatus

Country Status (6)

Country Link
JP (1) JP5904590B2 (zh)
KR (1) KR102108025B1 (zh)
CN (1) CN104704610B (zh)
SG (1) SG11201502614VA (zh)
TW (1) TWI605499B (zh)
WO (1) WO2014054687A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102397423B1 (ko) * 2015-10-26 2022-05-12 삼성디스플레이 주식회사 레이저 장치 및 이의 구동방법
KR102507094B1 (ko) * 2016-01-13 2023-03-08 삼성디스플레이 주식회사 레이저 결정화 장치
JP6267755B1 (ja) * 2016-07-26 2018-01-24 株式会社日本製鋼所 レーザアニール加工装置、半導体装置の製造方法およびアモルファスシリコンの結晶化方法
JP6904567B2 (ja) * 2017-09-29 2021-07-21 三星ダイヤモンド工業株式会社 スクライブ加工方法及びスクライブ加工装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3293136B2 (ja) 1993-06-04 2002-06-17 セイコーエプソン株式会社 レーザ加工装置及びレーザ加工方法
JPH1012549A (ja) * 1996-06-25 1998-01-16 Toshiba Corp パルスガスレーザ発振装置、レーザアニール装置、半導体装置の製造方法、及び半導体装置
JP2001338892A (ja) * 2000-05-26 2001-12-07 Toshiba Corp レーザアニール装置および薄膜トランジスタの製造方法
JP3530484B2 (ja) 2000-12-08 2004-05-24 住友重機械工業株式会社 レーザ加工装置及び方法
JP2003109912A (ja) * 2001-10-01 2003-04-11 Matsushita Electric Ind Co Ltd レーザアニール装置
JP5430488B2 (ja) * 2010-05-11 2014-02-26 株式会社日本製鋼所 レーザアニール処理装置、レーザアニール処理体の製造方法およびレーザアニール処理プログラム

Also Published As

Publication number Publication date
WO2014054687A1 (ja) 2014-04-10
KR20150060743A (ko) 2015-06-03
TW201421548A (zh) 2014-06-01
TWI605499B (zh) 2017-11-11
JP5904590B2 (ja) 2016-04-13
JP2014075562A (ja) 2014-04-24
KR102108025B1 (ko) 2020-05-07
CN104704610A (zh) 2015-06-10
CN104704610B (zh) 2017-09-29

Similar Documents

Publication Publication Date Title
EP2913854A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2833404A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2816598A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP2782121A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
TWI562367B (en) Semiconductor device and method for manufacturing semiconductor device
EP2793266A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2843707A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2672517A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
EP2711986A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2709149A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2701201A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
EP2806461A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
EP2854174A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2790216A4 (en) SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD FOR A SEMICONDUCTOR COMPONENT
TWI563540B (en) Semiconductor device manufacturing method
EP2802005A4 (en) SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
EP2793267A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2698822A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2709148A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2728615A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2913843A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2851938A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2860760A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2722878A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2720254A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME