SG11201407170UA - Non-acidic isotropic etch-back for silicon wafer solar cells - Google Patents

Non-acidic isotropic etch-back for silicon wafer solar cells

Info

Publication number
SG11201407170UA
SG11201407170UA SG11201407170UA SG11201407170UA SG11201407170UA SG 11201407170U A SG11201407170U A SG 11201407170UA SG 11201407170U A SG11201407170U A SG 11201407170UA SG 11201407170U A SG11201407170U A SG 11201407170UA SG 11201407170U A SG11201407170U A SG 11201407170UA
Authority
SG
Singapore
Prior art keywords
acidic
silicon wafer
solar cells
isotropic etch
wafer solar
Prior art date
Application number
SG11201407170UA
Other languages
English (en)
Inventor
Prabir Kanti Basu
Matthew Benjamin Boreland
Debajyoti Sarangi
Vinodh Shanmugam
Original Assignee
Univ Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Singapore filed Critical Univ Singapore
Publication of SG11201407170UA publication Critical patent/SG11201407170UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
SG11201407170UA 2012-05-09 2013-05-09 Non-acidic isotropic etch-back for silicon wafer solar cells SG11201407170UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261644730P 2012-05-09 2012-05-09
PCT/SG2013/000183 WO2013169208A1 (en) 2012-05-09 2013-05-09 Non-acidic isotropic etch-back for silicon wafer solar cells

Publications (1)

Publication Number Publication Date
SG11201407170UA true SG11201407170UA (en) 2014-11-27

Family

ID=49551071

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407170UA SG11201407170UA (en) 2012-05-09 2013-05-09 Non-acidic isotropic etch-back for silicon wafer solar cells

Country Status (4)

Country Link
US (1) US20150044812A1 (zh)
CN (1) CN104221167A (zh)
SG (1) SG11201407170UA (zh)
WO (1) WO2013169208A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996750A (zh) * 2014-06-09 2014-08-20 常州时创能源科技有限公司 一种晶硅太阳电池扩散死层去除方法
US9246046B1 (en) * 2014-09-26 2016-01-26 Sunpower Corporation Etching processes for solar cell fabrication
CN105576074A (zh) * 2014-10-08 2016-05-11 上海神舟新能源发展有限公司 一种n型双面电池的湿法刻蚀方法
DE102017206455A1 (de) * 2017-04-13 2018-10-18 Rct Solutions Gmbh Verfahren und Vorrichtung zur chemischen Bearbeitung eines Halbleiter-Substrats
US20190207040A1 (en) * 2017-12-29 2019-07-04 Sunpower Corporation Chemical polishing of solar cell surfaces and the resulting structures
CN108565316B (zh) * 2018-05-31 2020-05-05 韩华新能源（启东）有限公司 一种单晶硅片制绒方法
WO2020060487A1 (en) * 2018-09-17 2020-03-26 National University Of Singapore Solar cell and method for fabricating a solar cell
CN109487340A (zh) * 2018-10-29 2019-03-19 江苏辉伦太阳能科技有限公司 兼容单/多晶黑硅的湿法背抛光装置及湿法背抛光方法
CN110034211B (zh) * 2019-04-23 2021-03-12 苏州阿特斯阳光电力科技有限公司 一种降低链式制绒化学品耗量的方法
CN111128684A (zh) * 2019-12-30 2020-05-08 南京纳鑫新材料有限公司 一种多晶湿法黑硅清洗工艺
WO2022211729A1 (en) * 2021-03-29 2022-10-06 National University Of Singapore Surface treatment method for forming a passivated contact of a solar cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092707B2 (en) * 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
JP2012521075A (ja) * 2009-03-17 2012-09-10 ロート ウント ラウ アーゲー 基板処理装置および基板処理方法
DE102010024309A1 (de) * 2010-06-18 2011-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer photovoltaischen Solarzelle
DE102011050055A1 (de) * 2010-09-03 2012-04-26 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Silziumschicht
CN102005504A (zh) * 2010-10-15 2011-04-06 锦州华昌光伏科技有限公司 可提高太阳电池转化效率的硅片制绒方法

Also Published As

Publication number Publication date
CN104221167A (zh) 2014-12-17
US20150044812A1 (en) 2015-02-12
WO2013169208A8 (en) 2014-05-15
WO2013169208A1 (en) 2013-11-14

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