SG11201407009UA - Fe-Pt-BASED SPUTTERING TARGET HAVING NON-MAGNETIC SUBSTANCE DISPERSED THEREIN - Google Patents

Fe-Pt-BASED SPUTTERING TARGET HAVING NON-MAGNETIC SUBSTANCE DISPERSED THEREIN

Info

Publication number
SG11201407009UA
SG11201407009UA SG11201407009UA SG11201407009UA SG11201407009UA SG 11201407009U A SG11201407009U A SG 11201407009UA SG 11201407009U A SG11201407009U A SG 11201407009UA SG 11201407009U A SG11201407009U A SG 11201407009UA SG 11201407009U A SG11201407009U A SG 11201407009UA
Authority
SG
Singapore
Prior art keywords
magnetic substance
sputtering target
llll
sintered body
dispersed
Prior art date
Application number
SG11201407009UA
Inventor
Atsushi Sato
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201407009UA publication Critical patent/SG11201407009UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C22C33/0207—Using a mixture of prealloyed powders or a master alloy
    • C22C33/0228—Using a mixture of prealloyed powders or a master alloy comprising other non-metallic compounds or more than 5% of graphite
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Abstract

(i2) mwu ft iz s-5 iv x m £ titz s issaj n d9) mm IHMMi (43) m&'&m a 2014^5^ 1 0(01.05.2014) WIPOIPCT (10) WO 2014/064995 A1 (51) C23C14/34 (2006.01) (21) (22) (25) (26) 4>§fl(£> S lp: G11B 5/851 (2006.01) PCT/JP2013/072249 2013^8^ 21 0(21.08.2013) (30) fiBfefix — $: 4#Jg| 2012-235693 2012 ^ 10 ^ 25 0(25.10.2012) JP (71) ttiJiA: J X 0 l£0 5^ J1^5e^tt(JX NIPPON MINING & METALS CORPORATION) [ JP/JP] ; T 1008164 6# 3-^- Tokyo (JP). (72) 1£M §t(SATO Atsushi); T 3191535 %tjjc mmiWfimimBlm 1 8 7 Site 4 JX0i 05 {HJjfHi§l*l Ibaraki(JP). (74) ItiA: 'h® S, ^1-(OGOSHI Isamu et al.); T 1050001 P^2T|9|1 4^ Tokyo (JP). (8i) Jt^ia (^ro&i^PBy > IS ft nj f b): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) (asrofci^isy > ±T(Dmm(Dfcm% 11^ nlfb): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), 3. — =j V T (AM, AZ, BY, KG, KZ, RU, TJ, TM), 3 — • V / ^ (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). - mmmi 21 ^(3)) (54) Title: Fe-Pt-BASED SPUTTERING TARGET HAVING NON-MAGNETIC SUBSTANCE DISPERSED THEREIN = (54)f§BJ(7):S^ : F e - P t £ U V o\ o\ •t o o CJ o & (57) Abstract: A sintered body sputtering target which comprises an alloy having a chemical composition comprising Pt at a mo - lecular population ratio of 35 to 55% and a remainder made up by Fe and non-magnetic substance dispersed a in the alloy, said sintered body sputtering target being characterized in that at least Si02 is contained as the non-magnetic substance, the Si02 is amorphous, and the residual oxygen amount, which determined is by subtracting the amount of oxygen contained as a component of the non-magnetic substance from the total amount of oxygen contained in the target, is 0.07 wt% or less. The present invention ad­ dresses the problem of providing a sintered body sputtering target which has such structure that non-magnetic substance a a compris - ing Si02 is dispersed in a Fe-Pt-based alloy, and in which the crystallization of SiO 2 into cristobalite can be avoided and particles are produced in a reduced amount during sputtering. (57) ^ii$: mm-' fn WO 2014/064995 A11II llll IIII III III Hill III III III 111 Hill lllll llll lllll 111 mill llll 111 llll P t 5-5 5%, g£jb<F 'J ht'fcot, LT'>&< 1 1 s i S i O ^#a 2 B 0 Itfcot > Mmfto. 7W*%&LTVtb&Z£&ft8L£t&tit1fctoX'tv* 0 U K s iOzCD^g xh/\*7^ h^a>$NMt£iiPSijU u r-r s i o £# 2 F e - P t $ U h£}If*
SG11201407009UA 2012-10-25 2013-08-21 Fe-Pt-BASED SPUTTERING TARGET HAVING NON-MAGNETIC SUBSTANCE DISPERSED THEREIN SG11201407009UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012235693 2012-10-25
PCT/JP2013/072249 WO2014064995A1 (en) 2012-10-25 2013-08-21 Fe-Pt-BASED SPUTTERING TARGET HAVING NON-MAGNETIC SUBSTANCE DISPERSED THEREIN

Publications (1)

Publication Number Publication Date
SG11201407009UA true SG11201407009UA (en) 2014-12-30

Family

ID=50544376

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407009UA SG11201407009UA (en) 2012-10-25 2013-08-21 Fe-Pt-BASED SPUTTERING TARGET HAVING NON-MAGNETIC SUBSTANCE DISPERSED THEREIN

Country Status (7)

Country Link
US (1) US20150107991A1 (en)
JP (1) JP5974327B2 (en)
CN (1) CN104411862B (en)
MY (1) MY168523A (en)
SG (1) SG11201407009UA (en)
TW (1) TWI583812B (en)
WO (1) WO2014064995A1 (en)

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US9567665B2 (en) 2010-07-29 2017-02-14 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film, and process for producing same
WO2012086335A1 (en) 2010-12-20 2012-06-28 Jx日鉱日石金属株式会社 Fe-pt-based sputtering target with dispersed c particles
CN103262166B (en) 2010-12-21 2016-10-26 吉坤日矿日石金属株式会社 Magnetic recording film sputtering target and manufacture method thereof
WO2014034390A1 (en) * 2012-08-31 2014-03-06 Jx日鉱日石金属株式会社 Fe-BASED MAGNETIC MATERIAL SINTERED BODY
WO2014045744A1 (en) 2012-09-21 2014-03-27 Jx日鉱日石金属株式会社 Sintered fe-pt-based magnetic material
US9940962B2 (en) * 2014-08-29 2018-04-10 Seagate Technology Llc Low power thermally assisted data recording media
JP6305881B2 (en) * 2014-09-05 2018-04-04 Ｊｘ金属株式会社 Sputtering target for magnetic recording media
JP6285043B2 (en) 2014-09-22 2018-03-07 Ｊｘ金属株式会社 Sputtering target for forming a magnetic recording film and method for producing the same
JP6354508B2 (en) * 2014-10-01 2018-07-11 富士電機株式会社 Perpendicular magnetic recording medium
WO2017002316A1 (en) * 2015-07-02 2017-01-05 富士電機株式会社 Manufacturing method for magnetic recording medium and magnetic recording medium manufactured by said manufacturing method
CN108699677B (en) * 2016-02-19 2020-12-04 捷客斯金属株式会社 Sputtering target for magnetic recording medium and magnetic thin film
JP6692724B2 (en) * 2016-09-02 2020-05-13 Ｊｘ金属株式会社 Non-magnetic material dispersed Fe-Pt based sputtering target
WO2018047978A1 (en) * 2016-09-12 2018-03-15 Ｊｘ金属株式会社 Ferromagnetic material sputtering target
JP7057692B2 (en) * 2018-03-20 2022-04-20 田中貴金属工業株式会社 Fe-Pt-Oxide-BN-based sintered body for sputtering target
CN108407147B (en) * 2018-05-03 2020-10-09 陈风娇 Garbage recycling device with automatic shearing function
CN109888317B (en) * 2019-03-19 2022-06-07 苏州钧峰新能源科技有限公司 Direct methanol fuel cell catalyst and preparation method thereof
US20220267892A1 (en) * 2019-07-12 2022-08-25 Tanaka Kikinzoku Kogyo K.K. Fe-pt-bn-based sputtering target and production method therefor
CN110373642B (en) * 2019-08-01 2021-08-10 包头金山磁材有限公司 Heavy rare earth metal target material repairing method
JP7462511B2 (en) * 2020-08-12 2024-04-05 田中貴金属工業株式会社 Fe-Pt-BN sputtering target and manufacturing method thereof
TWI752655B (en) * 2020-09-25 2022-01-11 光洋應用材料科技股份有限公司 Fe-pt based sputtering target and method of preparing the same
US20240096368A1 (en) * 2022-09-15 2024-03-21 Western Digital Technologies, Inc. Media structure configured for heat-assisted magnetic recording and improved media fabrication

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JP4175829B2 (en) * 2002-04-22 2008-11-05 株式会社東芝 Sputtering target for recording medium and magnetic recording medium
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
JP4609763B2 (en) * 2004-10-15 2011-01-12 日立金属株式会社 Method for producing low oxygen metal powder
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US9567665B2 (en) * 2010-07-29 2017-02-14 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording film, and process for producing same
SG189257A1 (en) * 2010-12-17 2013-05-31 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film and method for producing same
WO2012086578A1 (en) * 2010-12-20 2012-06-28 Jx日鉱日石金属株式会社 Fe-pt ferromagnetic sputtering target and method for producing same
WO2012086335A1 (en) * 2010-12-20 2012-06-28 Jx日鉱日石金属株式会社 Fe-pt-based sputtering target with dispersed c particles
JP5041262B2 (en) * 2011-01-31 2012-10-03 三菱マテリアル株式会社 Sputtering target for forming a magnetic recording medium film and method for producing the same

Also Published As

Publication number Publication date
MY168523A (en) 2018-11-12
WO2014064995A1 (en) 2014-05-01
TW201425617A (en) 2014-07-01
TWI583812B (en) 2017-05-21
JPWO2014064995A1 (en) 2016-09-08
US20150107991A1 (en) 2015-04-23
JP5974327B2 (en) 2016-08-23
CN104411862A (en) 2015-03-11
CN104411862B (en) 2017-07-18

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