SG11201402450UA - Metal peroxo compounds with organic co-ligands for electron beam, deep uv and extreme uv photoresist applications - Google Patents
Metal peroxo compounds with organic co-ligands for electron beam, deep uv and extreme uv photoresist applicationsInfo
- Publication number
- SG11201402450UA SG11201402450UA SG11201402450UA SG11201402450UA SG11201402450UA SG 11201402450U A SG11201402450U A SG 11201402450UA SG 11201402450U A SG11201402450U A SG 11201402450UA SG 11201402450U A SG11201402450U A SG 11201402450UA SG 11201402450U A SG11201402450U A SG 11201402450UA
- Authority
- SG
- Singapore
- Prior art keywords
- ligands
- extreme
- deep
- organic
- electron beam
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 238000010894 electron beam technology Methods 0.000 title 1
- 239000003446 ligand Substances 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C59/00—Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
- C07C59/01—Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups
- C07C59/08—Lactic acid
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/28—Titanium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/405,587 US8703386B2 (en) | 2012-02-27 | 2012-02-27 | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| PCT/IB2013/051128 WO2013128313A1 (en) | 2012-02-27 | 2013-02-12 | Metal peroxo compounds with organic co-ligands for electron beam, deep uv and extreme uv photoresist applications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201402450UA true SG11201402450UA (en) | 2014-06-27 |
Family
ID=49003237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201402450UA SG11201402450UA (en) | 2012-02-27 | 2013-02-12 | Metal peroxo compounds with organic co-ligands for electron beam, deep uv and extreme uv photoresist applications |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8703386B2 (en) |
| JP (1) | JP2015513540A (en) |
| KR (1) | KR20140121826A (en) |
| CN (1) | CN104145217B (en) |
| DE (1) | DE112013000700B4 (en) |
| GB (1) | GB2512794B (en) |
| SG (1) | SG11201402450UA (en) |
| WO (1) | WO2013128313A1 (en) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| JP5830048B2 (en) * | 2013-03-15 | 2015-12-09 | 信越化学工業株式会社 | Titanium-containing resist underlayer film forming composition and pattern forming method |
| US9310684B2 (en) * | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| JP6495025B2 (en) | 2014-01-31 | 2019-04-03 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Vacuum integrated hard mask processing and equipment |
| GB201405335D0 (en) * | 2014-03-25 | 2014-05-07 | Univ Manchester | Resist composition |
| GB201413924D0 (en) | 2014-08-06 | 2014-09-17 | Univ Manchester | Electron beam resist composition |
| KR20170059991A (en) * | 2014-09-17 | 2017-05-31 | 제이에스알 가부시끼가이샤 | Pattern formation process |
| WO2016043198A1 (en) * | 2014-09-17 | 2016-03-24 | Jsr株式会社 | Method for forming pattern |
| KR102696070B1 (en) | 2014-10-23 | 2024-08-16 | 인프리아 코포레이션 | Organometallic solution based high resolution patterning compositions and corresponding methods |
| JP6544248B2 (en) * | 2015-02-09 | 2019-07-17 | 信越化学工業株式会社 | Resist material and pattern formation method using the same |
| JP6384373B2 (en) * | 2015-03-20 | 2018-09-05 | Jsr株式会社 | Pattern formation method |
| CN107548473A (en) * | 2015-04-22 | 2018-01-05 | 亚历克斯·菲利普·格雷厄姆·罗宾逊 | The photoresist of sensitivity enhancing |
| GB201517273D0 (en) * | 2015-09-30 | 2015-11-11 | Univ Manchester | Resist composition |
| KR102508142B1 (en) | 2015-10-13 | 2023-03-08 | 인프리아 코포레이션 | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| WO2017156388A1 (en) | 2016-03-11 | 2017-09-14 | Inpria Corporation | Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates |
| WO2017163922A1 (en) * | 2016-03-24 | 2017-09-28 | 富士フイルム株式会社 | Active ray-sensitive or radiation-sensitive composition, method for purifying active ray-sensitive or radiation-sensitive composition, pattern-forming method, and method for producing electronic device |
| US20180373143A1 (en) * | 2016-04-22 | 2018-12-27 | Irresistible Materials Ltd | Sensitivity enhanced photoresists |
| KR20230166158A (en) | 2016-08-12 | 2023-12-06 | 인프리아 코포레이션 | Methods of reducing metal residue in edge bead region from metal-containing resists |
| KR101947517B1 (en) * | 2018-01-23 | 2019-02-13 | 영창케미칼 주식회사 | Developer composition for forming photosensitive photoresist pattern for extreme ultraviolet |
| JP6933605B2 (en) * | 2018-05-21 | 2021-09-08 | 信越化学工業株式会社 | Pattern formation method |
| JP7348210B2 (en) | 2018-06-13 | 2023-09-20 | ブルーワー サイエンス アイ エヌ シー． | Adhesive layer for EUV lithography |
| US11092890B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
| US11092889B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
| KR102307977B1 (en) | 2018-07-31 | 2021-09-30 | 삼성에스디아이 주식회사 | Semiconductor resist composition, and method of forming patterns using the composition |
| WO2020040042A1 (en) * | 2018-08-21 | 2020-02-27 | 富士フイルム株式会社 | Chemical solution and chemical solution container |
| TW202016279A (en) | 2018-10-17 | 2020-05-01 | 美商英培雅股份有限公司 | Patterned organometallic photoresists and methods of patterning |
| KR20240104192A (en) | 2018-11-14 | 2024-07-04 | 램 리써치 코포레이션 | Methods for Making hard masks useful in next-generation lithography |
| US11720022B2 (en) | 2019-02-12 | 2023-08-08 | Samsung Electronics Co., Ltd. | Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same |
| WO2020223011A1 (en) | 2019-04-30 | 2020-11-05 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| US11609494B2 (en) | 2019-04-30 | 2023-03-21 | Samsung Sdi Co., Ltd. | Semiconductor photoresist composition and method of forming patterns using the composition |
| TWI837391B (en) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | Photoresist development with halide chemistries |
| US20220308454A1 (en) * | 2019-06-28 | 2022-09-29 | Lam Research Corporation | Bake strategies to enhance lithographic performance of metal-containing resist |
| JP2022540789A (en) * | 2019-06-28 | 2022-09-20 | ラム リサーチ コーポレーション | Photoresist with multiple patterned radiation absorbing elements and/or vertical composition gradient |
| KR102446362B1 (en) | 2019-10-15 | 2022-09-21 | 삼성에스디아이 주식회사 | Semiconductor resist composition, and method of forming patterns using the composition |
| JP7189375B2 (en) | 2020-01-15 | 2022-12-13 | ラム リサーチ コーポレーション | Underlayer for photoresist adhesion and dose reduction |
| US11947262B2 (en) | 2020-03-02 | 2024-04-02 | Inpria Corporation | Process environment for inorganic resist patterning |
| JP2023524969A (en) | 2020-05-06 | 2023-06-14 | インプリア・コーポレイション | Multi-patterning using organometallic photopatternable layers by an intermediate freezing step |
| TWI781629B (en) * | 2020-05-22 | 2022-10-21 | 台灣積體電路製造股份有限公司 | Method of manufacturing semiconductor devices |
| US11942322B2 (en) * | 2020-05-22 | 2024-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor devices and pattern formation method |
| WO2022010809A1 (en) * | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US11726405B2 (en) * | 2020-09-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist for semiconductor fabrication |
| KR102598259B1 (en) | 2020-12-18 | 2023-11-02 | 삼성에스디아이 주식회사 | Semiconductor photoresist composition and method of forming patterns using the composition |
| TW202403444A (en) | 2022-03-10 | 2024-01-16 | 日商日產化學股份有限公司 | Wafer edge protective film-forming composition for semiconductor manufacturing |
| CN115407607B (en) * | 2022-06-28 | 2024-07-26 | 大连理工大学 | Application of zinc oxygen cluster compound in photoresist field |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61273539A (en) | 1985-05-29 | 1986-12-03 | Hitachi Ltd | Radiation sensitive material |
| JPH083627B2 (en) * | 1986-06-11 | 1996-01-17 | 株式会社日立製作所 | Radiation sensitive material |
| US5061599A (en) * | 1986-06-11 | 1991-10-29 | Hitachi, Ltd. | Radiation sensitive materials |
| US5178989A (en) * | 1989-07-21 | 1993-01-12 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
| EP1391476B1 (en) | 2001-04-09 | 2015-12-09 | Sekisui Chemical Co., Ltd. | Photoreactive composition |
| EP1449891B1 (en) | 2001-10-30 | 2008-01-09 | Kansai Paint Co., Ltd. | Coating composition for forming titanium oxide film, process for forming titanium oxide film and metal substrate coated with titanium oxide film |
| KR20030057133A (en) | 2001-12-28 | 2003-07-04 | 삼성전자주식회사 | Organic Metal Precursor for Forming Metal Pattern and Method for Forming Metal Pattern Using the Same |
| JP2003238573A (en) * | 2002-02-18 | 2003-08-27 | Toray Ind Inc | Composition containing organometallic compound, display member and display |
| JP2006182714A (en) * | 2004-12-28 | 2006-07-13 | Tohoku Univ | Organotantalum aqueous solution and method for producing tantalum lactate peroxy compound crystal |
| KR20110137400A (en) | 2006-11-01 | 2011-12-22 | 더 스테이트 오브 오레곤 액팅 바이 앤드 쓰루 더 스테이트 보드 오브 하이어 에쥬케이션 온 비해프 오브 오레곤 스테이트 유니버시티 | Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture |
| JP5776400B2 (en) * | 2011-07-20 | 2015-09-09 | Jsr株式会社 | Composition for forming metal oxide film |
-
2012
- 2012-02-27 US US13/405,587 patent/US8703386B2/en active Active
-
2013
- 2013-02-12 JP JP2014558230A patent/JP2015513540A/en active Pending
- 2013-02-12 KR KR1020147020226A patent/KR20140121826A/en not_active Application Discontinuation
- 2013-02-12 CN CN201380011075.3A patent/CN104145217B/en not_active Expired - Fee Related
- 2013-02-12 DE DE112013000700.2T patent/DE112013000700B4/en not_active Expired - Fee Related
- 2013-02-12 GB GB201413639A patent/GB2512794B/en not_active Expired - Fee Related
- 2013-02-12 SG SG11201402450UA patent/SG11201402450UA/en unknown
- 2013-02-12 WO PCT/IB2013/051128 patent/WO2013128313A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140121826A (en) | 2014-10-16 |
| GB2512794B (en) | 2015-05-06 |
| US8703386B2 (en) | 2014-04-22 |
| GB201413639D0 (en) | 2014-09-17 |
| CN104145217A (en) | 2014-11-12 |
| US20130224652A1 (en) | 2013-08-29 |
| DE112013000700T5 (en) | 2014-10-09 |
| WO2013128313A1 (en) | 2013-09-06 |
| DE112013000700B4 (en) | 2016-09-22 |
| CN104145217B (en) | 2019-02-05 |
| JP2015513540A (en) | 2015-05-14 |
| GB2512794A (en) | 2014-10-08 |
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