JP5776400B2 - Composition for forming metal oxide film - Google Patents

Description

  The present invention relates to a metal oxide film forming composition.

  Along with the miniaturization of semiconductor devices and the like, miniaturization of processing size using a multilayer resist process is progressing in order to obtain a higher degree of integration. In this multilayer resist process, after forming an inorganic film using an inorganic material, a resist composition is further applied to form a resist film that is an organic film having an etching selectivity different from that of the inorganic film, and then exposed to a mask pattern. Is transferred and developed with a developer to obtain a resist pattern. Subsequently, this resist pattern is transferred to the inorganic film by dry etching, and finally the pattern of the resist underlayer film is transferred to the substrate to be processed by dry etching, whereby a substrate having a desired pattern is obtained (Japanese Patent Laid-Open No. 2001). -284209, JP2010-85912A, and JP2008-39811A).

  As one of the miniaturization techniques, a metal oxide film may be formed between the inorganic film and the resist film in the multilayer resist process. At this time, the conventional composition for forming a metal oxide film can be applied uniformly on the surface of a substrate having a certain degree of hydrophilicity, but is uniform on the surface having a hydrophobic property on which an inorganic film is formed on the substrate. There is an inconvenience that cannot be applied.

  Under such circumstances, development of a composition for forming a metal oxide film having good uniform coatability on various substrates is desired.

JP 2001-284209 A JP 2010-85912 A JP 2008-39811 A

  This invention is made | formed based on the above situations, The objective is to provide the composition for metal oxide film formation which has favorable uniform applicability | paintability with respect to various board | substrates.

The invention made to solve the above problems is
At least one metal element selected from the group consisting of metal elements of [A] atomic number 23 to 78 and ^{(a), - O-O} -, - O-S -, - O-O-SO 2 -O - _{^{, - O-SO 2 -O-}} O-SO 2 -O - and ^{- O-C (= O)} -O-O - compound containing at least one ligand (b) selected from the group consisting of (Hereinafter also referred to as “[A] compound”),
[B] A composition for forming a metal oxide film containing a surfactant and [C] a solvent.

  The composition for forming a metal oxide film of the present invention contains a [A] compound, a [B] surfactant, and a [C] solvent, so that it has good uniform coating properties on various substrates. it can.

  The metal element (a) is preferably at least one metal element selected from the group consisting of zirconium, molybdenum, hafnium and tungsten. By using the metal element (a) as the specific element, the uniform coating property of the metal oxide film forming composition can be further improved.

[A] The compound is
At least one selected from the group consisting of metal simple substance of metal element (a), metal oxoacid, metal oxoacid salt, metal oxide, metal hydroxide, metal alkoxide, metal halide and metal oxyhalide,
It is preferably a reaction product with at least one compound selected from the group consisting of hydrogen peroxide, thiohydrogen peroxide, persulfuric acid, peroxodisulfuric acid and percarbonate.

  The metal element (a) and the ligand (b) can be easily included in the [A] compound by using a reaction product of the metal element (a) of the specific aspect and the specific compound.

  [B] The surfactant is preferably a nonionic surfactant. [B] By using the surfactant as a nonionic surfactant, the uniform coating property of the metal oxide film-forming composition can be further improved.

  [B] The surfactant content is preferably 0.01% by mass or more and 10% by mass or less. [B] By making content of surfactant into the said specific range, the uniform applicability | paintability of the said composition for metal oxide film formation can be improved more.

  [C] The solvent preferably contains 80% by mass or more of an organic solvent. [C] The uniform coating property of the composition for forming a metal oxide film can be further improved by using a solvent containing an organic solvent as the solvent.

  The metal oxide film forming composition is suitable for a multilayer resist process. As described above, the composition for forming a metal oxide film has a good uniform coating property on various substrates. Therefore, in the case of coating on a hydrophobic inorganic film in a multilayer resist process. Can also be suitably used.

  As described above, the present invention can provide a metal oxide film-forming composition having good uniform coating properties on various substrates. Therefore, the composition for forming a metal oxide film can be suitably used for forming a resist pattern in a lithography process that is expected to be further miniaturized in the future.

<Composition for forming metal oxide film>
The composition for forming a metal oxide film of the present invention contains [A] compound, [B] surfactant and [C] solvent. Moreover, the said composition for metal oxide film formation may contain another arbitrary component, unless the effect of this invention is impaired. Hereinafter, each component will be described in detail.

<[A] Compound>
[A] compounds, at least one metal element selected from the group consisting of metal elements of atomic numbers ^{23~78 (a), - O-} O -, - O-S -, - O-O-SO 2 _{^{-O -, - O-SO 2}} -O-O-SO 2 -O - and ^{- O-C (= O)} -O-O - and at least one ligand selected from the group consisting of (b) It is a compound containing. In addition, [A] compound may use 2 or more types together.

As the ligand, in addition to the ligand (b), for example, carboxylate ions such as acetate ion and propionate ion;
Β-diketonate ions such as acetylacetonate ions, methylacetylacetonate ions, benzoylacetonate ions;
Alcoholate ions such as methylate ions and ethylate ions;
Phenolates such as phenolate and methylphenolate;
Halide anions such as F ⁻ , Cl ⁻ , Br ⁻ and I ⁻ ;
O ²⁻ , NO ₃ ⁻ , CN ⁻ , ClO ₄ ⁻ , HSO ₄ ⁻ , H ₂ PO ₄ ⁻ , BF ₄ ⁻ , PF ₆ ⁻ , SbF ₆ ⁻ , aliphatic sulfonate anion, aromatic sulfonate anion, fluorinated alkane Sulfonate anions;
Nitrogen-containing neutral ligands such as ammonia methylamine, dimethylamine, trimethylamine, ethylenediamine, diethylenetriamine, pyridine;
And phosphorus-containing neutral ligands such as trimethylphosphine, triethylphosphine, triphenylphosphine, and triphenylphosphite.

  The metal element (a) is preferably at least one metal element selected from the group consisting of zirconium, molybdenum, hafnium and tungsten. By using the metal element (a) as the specific element, the uniform coating property of the metal oxide film forming composition can be further improved.

  The compound [A] is selected from the group consisting of a metal simple substance, a metal oxo acid, a metal oxo acid salt, a metal oxide, a metal hydroxide, a metal alkoxide, a metal halide, and a metal oxyhalide of the metal element (a). It is preferably a reaction product of at least one compound and at least one compound selected from the group consisting of hydrogen peroxide, thiohydrogen peroxide, persulfuric acid, peroxodisulfuric acid, and percarbonate. The metal element (a) and the ligand (b) can be easily included in the [A] compound by using a reaction product of the metal element (a) of the specific aspect and the specific compound.

  [A] The content of the compound is preferably 0.05% by mass or more and 20% by mass or less with respect to 100% by mass of the metal oxide film forming composition. [A] By making content of a compound into the said specific range, the uniform applicability | paintability of the said composition for metal oxide film formation can be improved more.

<[A] Compound Synthesis Method>
The method for synthesizing the compound [A] will be described by taking as an example a case where tungsten is used as the metal element (a) and reacted with hydrogen peroxide.

  First, a commercially available tungstate is dissolved in ion-exchanged water or the like, brought into contact with a proton-type cation exchange resin, and ion-exchanged to obtain a tungstic acid aqueous solution.

  Examples of the tungstate include ammonium metatungstate, ammonium paratungstate, sodium tungstate, potassium tungstate, and calcium tungstate. Among these, ammonium metatungstate is preferable because the obtained aqueous tungstic acid solution has high stability.

  The concentration of the aqueous tungstate solution is not particularly limited as long as it is not higher than the saturation solubility, but is usually 0.01 mol / L or more and 2.0 mol / L or less, and 0.1 mol / L or more and 1.0 mol or less. / L or less is preferable, and 0.2 mol / L or more and 0.5 mol / L or less is more preferable.

  The cation exchange resin is not particularly limited as long as it can exchange cation of tungstate with proton, but strong acid type is preferable. As a contact method between the tungstate aqueous solution and the cation exchange resin, a column method widely used industrially is preferable. The temperature of the tungstate aqueous solution during ion exchange is preferably 0 ° C. or higher and 70 ° C. or lower, and more preferably 5 ° C. or higher and 50 ° C. or lower.

  The space velocity in ion exchange is not particularly limited as long as the cation of tungstate is sufficiently exchanged with protons.

  Next, a peroxotungstic acid aqueous solution as a compound [A] is obtained by adding hydrogen peroxide water to the tungstic acid aqueous solution and causing the reaction.

  As reaction temperature, it is 5 to 70 degreeC normally, Preferably it is 10 to 50 degreeC. If it is less than 5 ° C, the reaction may be insufficient, and if it exceeds 70 ° C, hydrogen peroxide may be decomposed. The reaction time is usually 0.1 hour to 3 hours, preferably 0.5 hour to 2 hours. In addition, it is preferable to accompany stirring in the case of reaction.

  The amount of hydrogen peroxide added is usually 0.5 mol to 15 mol, preferably 1 mol to 10 mol, relative to 1 mol of tungsten. When the amount of hydrogen peroxide added is less than 0.5 mol, the reaction may be insufficient. Moreover, even if it adds exceeding 15 mol, a difference is not seen in an effect.

  It is preferable to remove hydrogen peroxide remaining in the solution after the reaction. Examples of the method for removing hydrogen peroxide include a method in which the hydrogen peroxide is decomposed and removed by heating at 90 ° C. to 100 ° C. for 1 hour to 3 hours.

<[B] Surfactant>
[B] Examples of the surfactant include nonionic surfactants, anionic surfactants, and cationic surfactants. [B] Two or more surfactants may be used in combination.

Examples of nonionic surfactants include acetylene group-containing surfactants;
Polyoxyethylene (POE) octyl ether, POE (2-ethyl-hexyl) ether, POE lauryl ether, POE myristyl ether, POE cetyl ether, POE stearyl ether, POE oleyl ether, POE isostearyl ether, POE behenyl ether, POE cetyl POE alkyl ethers such as stearyl diether;
POE polyoxypropylene alkyl ether type such as POE / polyoxypropylene (POP) butyl ether, POE / POP lauryl ether, POE / POP cetyl ether, POE / POP glycol;
POE aryl ethers such as POE octyl phenyl ether, POE nonyl phenyl ether, POE chlorophenyl ether, POE naphthyl ether;
POE hardened castor oil ether, POE castor oil ether;
Other POE higher alcohol ethers such as POE lanolin alcohol ether and POE phytosterol;
POE glycerin fatty acid esters such as POE glyceryl monostearate and POE glyceryl oleate;
POE sorbitan fatty acid esters such as POE sorbitan monolaurate, POE sorbitan monostearate, POE sorbitan tristearate, POE sorbitan monoisostearate;
POE sorbitol fatty acid esters such as POE sorbitol hexastearate, POE sorbitol tetrastearate, POE sorbitol tetraoleate, POE sorbitol monolaurate;
Polyethylene glycol fatty acid esters such as polyethylene glycol monolauric acid, polyethylene glycol monostearic acid, polyethylene glycol monooleic acid, polyethylene glycol distearic acid, polyethylene glycol dioleic acid, polyethylene glycol diisostearic acid;
Ether esters such as polyethylene glycol lanolin fatty acid esters;
Glyceryl fatty acid esters such as glyceryl monostearate, self-emulsifying glyceryl monostearate, glyceryl monohydroxystearate, glyceryl distearate;
Diglyceryl monostearate, diglyceryl monooleate, diglyceryl dioleate, diglyceryl monoisostearate, tetraglyceryl monostearate, tetraglyceryl tristearate, tetraglyceryl pentastearate, hexaglyceryl monolaurate, hexamyristate monohexamate Polyglycerin fatty acid esters such as glyceryl, decaglyceryl distearate, decaglyceryl diisostearate;
Sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, sorbitan monoisostearate;
Ethylene glycol fatty acid esters such as ethylene glycol monolaurate and ethylene glycol distearate;
Propylene glycol fatty acid esters such as propylene glycol monostearate and self-emulsifying propylene glycol monostearate;
Pentaerythritol fatty acid esters such as pentaerythritol monostearate and pentaerythritol monooleate;
Sugar derivatives such as maltitol hydroxy fatty acid ethers, alkylated polysaccharides, alkyl (poly) glucosides, sugar esters;
alkyl glyceryl ethers such as α-monoisostearyl glyceryl ether;
Organic acid monoglycerides such as acetyl-monoglyceride, lactic acid monoglyceride, citric acid monoglyceride;
Palm oil fatty acid monoethanolamide, lauroyl monoethanolamide, myristoyl monoethanolamide, lauroyl diethanolamide, palm oil fatty acid diethanolamide, lauroyl isopropanolamide, myristoyl isopropanolamide, coconut oil fatty acid isopropanolamide, POE lauroyl monoethanolamide, coconut oil fatty acid Fatty acid alkanolamides such as methyl monoethanolamide, palm oil fatty acid methyldiethanolamide;
POE alkylamines such as POE laurylamine and POE stearylamine;
Examples include amine oxides such as lauryldimethylamine oxide, cocodimethylamine oxide, and cocoamidopropyldimethylamine oxide.

Examples of the anionic surfactant include polyarylalkane sulfonate, dialkyl sulfosuccinate, dialkyl sulfosuccinic acid, alkylbenzene sulfonic acid, α-olefin sulfonic acid, POE alkyl phenyl ether sulfonic acid, POE alkyl ether sulfosuccinic acid half ester, and the like. Sulfonic acid type surfactants of
Polyacrylic acid, polymethacrylic acid, polymaleic acid, copolymer of maleic acid and olefin, copolymer of acrylic acid and itaconic acid, copolymer of methacrylic acid and itaconic acid, maleic acid and styrene Copolymer of acrylic acid and methacrylic acid, copolymer of acrylic acid and methyl acrylate, copolymer of acrylic acid and vinyl acetate, copolymer of acrylic acid and maleic acid Carboxylic acid type surfactants such as
POE alkyl ether sulfate, POE alkyl phenyl ether sulfate, POE benzyl phenyl ether sulfate, POE styryl phenyl ether sulfate, POE styryl phenyl ether polymer sulfate, POE polyoxypropylene block polymer sulfate, sulfated olefin And sulfate ester type surfactants.

Examples of the cationic surfactant include lauryl trimethyl ammonium chloride, myristyl trimethyl ammonium chloride, palmityl trimethyl ammonium chloride, stearyl trimethyl ammonium chloride, oleyl trimethyl ammonium chloride, cetyl trimethyl ammonium chloride, behenyl trimethyl ammonium chloride, coconut oil alkyl trimethyl ammonium Monoalkyl quaternary ammonium salts such as chloride, beef tallow alkyl trimethyl ammonium chloride, stearyl trimethyl ammonium bromide, coconut oil alkyl trimethyl ammonium bromide, cetyl trimethyl ammonium methyl sulfate;
Dialkyl quaternary ammonium salts such as dioctyldimethylammonium chloride, dilauryldimethylammonium chloride, distearyldimethylammonium chloride;
Acylaminoalkyl quaternary ammonium salts such as lanolin fatty acid aminopropylethyldimethylammonium ethylsulfuric acid, lauroylaminoethylmethyldiethylammonium methylsulfuric acid;
Alkylethenoxy quaternary ammonium salts such as dipalmityl polyethenoxyethylammonium chloride, distearyl polyethenoxymethylammonium chloride;
Alkyl isoquinolinium salts such as lauryl isoquinolinium chloride;
Benzalkonium salts such as lauryldimethylbenzylammonium chloride and stearyldimethylbenzylammonium chloride;
Benzethonium salts such as benzyldimethyl {2- [2- (p-1,1,3,3, -tetramethylbutylphenoxy) ethoxy] ethyl} ammonium chloride;
Pyridinium salts such as cetylpyridinium chloride;
An imidazolinium salt;
Acyl basic amino acid alkyl ester salts such as N-cocoyl arginine ethyl ester pyrrolidone carboxylate and N-lauroyl lysine ethyl ethyl ester hydrochloride;
Primary amine salts such as laurylamine hydrochloride; secondary amine salts such as dilaurylamine acetate; tertiary amine salts;
Fatty acid amidoguanidinium salts;
Examples include alkyltrialkylene glycol ammonium salts such as lauryl triethylene glycol ammonium hydroxide.

  [B] The surfactant is preferably a nonionic surfactant. [B] By using the surfactant as a nonionic surfactant, the uniform coating property of the metal oxide film-forming composition can be further improved.

  [B] The content of the surfactant is preferably 0.01% by mass or more and 10% by mass or less, and preferably 0.1% by mass or more and 5% by mass with respect to 100% by mass of the metal oxide film forming composition. The following is more preferable. [B] By making content of surfactant into the said specific range, the uniform applicability | paintability of the said composition for metal oxide film formation can be improved more.

<[C] solvent>
[C] Although it does not specifically limit as a solvent, The thing which melt | dissolves or disperses each component uniformly and does not react with each component is used. As such a [C] solvent, pure water is preferable. Moreover, it is preferable that a [C] solvent contains 80 mass% or more of organic solvents.

  Examples of the organic solvent include alcohols, ethers, aromatic hydrocarbons, ketones, and other esters. Two or more of these organic solvents may be used in combination.

  Examples of alcohols include methanol, ethanol, benzyl alcohol, 2-phenylethyl alcohol, 3-phenyl-1-propanol and the like.

  Examples of ethers include cyclic ether, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol alkyl ether, propylene glycol monoalkyl ether, propylene glycol monoalkyl ether acetate, propylene glycol monoalkyl ether propionate and the like.

  Examples of the cyclic ether include tetrahydrofuran and the like.

  Examples of the glycol ether include ethylene glycol monomethyl ether and ethylene glycol monoethyl ether.

  Examples of the ethylene glycol alkyl ether acetate include methyl cellosolve acetate, ethyl cellosolve acetate, ethylene glycol monobutyl ether acetate, and ethylene glycol monoethyl ether acetate.

  Examples of the diethylene glycol alkyl ether include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and diethylene glycol ethyl methyl ether.

  Examples of the propylene glycol monoalkyl ether include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether and the like.

  Examples of the propylene glycol monoalkyl ether acetate include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate and the like.

  Examples of the propylene glycol monoalkyl ether propionate include propylene monoglycol methyl ether propionate, propylene glycol monoethyl ether propionate, propylene glycol monopropyl ether propionate, propylene glycol monobutyl ether propionate and the like. .

  Examples of aromatic hydrocarbons include toluene and xylene.

  Examples of ketones include methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, and the like.

  Examples of other esters include methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, hydroxy Methyl acetate, ethyl hydroxyacetate, butyl hydroxyacetate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate Methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate, Methyl ropoxyacetate, ethyl propoxyacetate, propylpropoxyacetate, butyl propoxyacetate, methyl butoxyacetate, ethyl butoxyacetate, propylbutoxyacetate, butylbutoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropionate Propyl acid, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, 2-butoxypropionic acid Ethyl, propyl 2-butoxypropionate, butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, 3-methyl Butyl xylpropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, 3-propoxy Examples include propyl propionate, butyl 3-propoxypropionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, and butyl 3-butoxypropionate.

<Other optional components>
In addition to the [A] compound, the [B] surfactant and the [C] solvent, the metal oxide film-forming composition includes other additives such as an adhesion assistant and a storage stabilizer as long as the desired effects are not impaired. These optional components may be contained. Two or more of these other optional components may be used in combination. Hereinafter, each component will be described in detail.

[Adhesion aid]
The adhesion assistant is a component that can further improve the adhesion between the metal oxide film formed from the metal oxide film-forming composition and the substrate or the inorganic film. Examples of the adhesion assistant include a functional silane coupling agent having a reactive functional group such as a carboxyl group, a (meth) acryloyl group, a vinyl group, an isocyanate group, and an oxiranyl group. Specifically, trimethoxysilylbenzoic acid, γ-methacryloxypropyltrimethoxysilane, vinyltriacetoxysilane, vinyltrimethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, β -(3,4-epoxycyclohexyl) ethyltrimethoxysilane and the like.

[Storage stabilizer]
Examples of the storage stabilizer include sulfur, quinones, hydroquinones, polyoxy compounds, amines, nitronitroso compounds and the like. Specific examples include 4-methoxyphenol and N-nitroso-N-phenylhydroxylamine aluminum.

<Method for Preparing Composition for Forming Metal Oxide Film>
The composition for forming a metal oxide film according to the present invention includes the [C] solvent in a predetermined proportion of other optional components in addition to the [A] compound and the [B] surfactant, as long as the desired effects are not impaired. It is prepared by mixing.

  When preparing the said metal oxide film formation composition as a solution state, solid content concentration (components other than the [C] solvent which occupies in a composition solution) depends on a use purpose, the value of desired film thickness, etc. An arbitrary concentration (for example, about 0.05% by mass to 25% by mass) can be set.

<Multilayer resist process>
The multilayer resist process includes, for example, (1) a step of forming an inorganic film on a substrate to be processed using an inorganic film forming composition,
(2) forming a metal oxide film on the inorganic film using the metal oxide film forming composition;
(3) forming a resist film on the metal oxide film using a resist composition;
(4) a step of exposing the resist film by irradiation of radiation through a photomask;
(5) a step of developing the exposed resist film to form a resist pattern; and (6) a step of forming a pattern on the substrate to be processed by dry etching one or more times using the resist pattern as a mask. Have. Hereinafter, each process is explained in full detail.

  In addition, the said metal oxide film formation composition can form a pattern in a to-be-processed substrate even if it is a process which does not have the said process (3). The metal oxide film formed from the metal oxide film-forming composition has a pattern because the exposed portion is cured and does not dissolve by the developer, while the unexposed portion dissolves in the developer. Can be formed.

[Step (1)]
In this step, an inorganic film is formed on the substrate to be processed using the inorganic film forming composition. Examples of the substrate to be processed include conventionally known substrates such as a silicon wafer and a wafer coated with aluminum. Examples of the inorganic film forming composition include conventionally known compositions disclosed in, for example, Japanese Patent Publication No. 6-12252 and Japanese Patent Application Laid-Open No. 59-93448.

  The inorganic film can be formed by applying an inorganic film forming composition on the surface of the substrate to be processed and performing a heat treatment as necessary. Examples of the coating method include spin coating, roll coating, and dipping. The heating temperature is usually 150 ° C. to 500 ° C., preferably 180 ° C. to 350 ° C. The heating time is usually 30 seconds to 1,200 seconds, preferably 45 seconds to 600 seconds. The film thickness of the inorganic film is usually about 5 nm to 50 nm.

[Step (2)]
In this step, a metal oxide film is formed on the inorganic film using the metal oxide film forming composition. As a method for forming the metal oxide film, a method similar to the method for forming the inorganic film described above can be applied.

[Steps (3) to (5)]
In steps (3) to (5), a resist composition is applied on the metal oxide film, and exposed, heated, and developed to form a resist pattern. Examples of the resist composition include a positive or negative chemically amplified resist composition containing a photoacid generator, a positive resist composition comprising an alkali-soluble resin and a quinonediazide-based photosensitizer, an alkali-soluble resin and a crosslinking agent. A negative resist composition comprising In addition, in the pattern formation method of this invention, a commercially available resist composition can also be used as such a resist composition. As a method of applying the resist composition, it can be applied by a conventional method such as a spin coating method. In addition, when apply | coating a resist composition, the quantity of the resist composition to apply | coat is adjusted so that the resist coating film obtained may become a desired film thickness.

  The resist coating film is formed by volatilizing a solvent (that is, a solvent contained in the resist composition) in the coating film by pre-baking the coating film formed by applying the resist composition. Can do. The pre-baking temperature is appropriately adjusted according to the type of resist composition to be used, but is preferably 30 ° C to 200 ° C, more preferably 50 ° C to 150 ° C. The heating time is usually 30 seconds to 200 seconds, preferably 45 seconds to 120 seconds. In addition, you may provide another coating film on the surface of this resist film. The film thickness of the resist film is usually 1 nm to 500 nm, preferably 10 nm to 300 nm.

Next, the resulting resist coating film is selectively irradiated with radiation through a photomask to expose the resist coating film. The radiation is appropriately selected from visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, γ-ray, molecular beam, ion beam, etc., depending on the type of acid generator used in the resist composition. Is preferably far ultraviolet light, and KrF excimer laser light (248 nm), ArF excimer laser light (193 nm), F ₂ excimer laser light (wavelength 157 nm), Kr ₂ excimer laser light (wavelength 147 nm), ArKr excimer laser light (Wavelength 134 nm) and extreme ultraviolet light (wavelength 13 nm, etc.) are more preferable. Further, an immersion exposure method can also be employed. The immersion upper layer film may be formed on the resist film using the immersion upper layer film forming composition.

  After the exposure, post-baking is performed in order to improve the resolution, pattern profile, developability, and the like of the resist film. The post-baking temperature is appropriately adjusted according to the type of resist composition used, but the pre-baking temperature is preferably 180 ° C. or lower, more preferably 150 ° C. or lower. The heating time is usually 30 seconds to 200 seconds, preferably 45 seconds to 120 seconds.

  After the post-baking, the resist coating film is developed to form a resist pattern. The developer used for development can be appropriately selected according to the type of resist composition used. For example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n -Propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo [5 4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene, and the like. These alkaline aqueous solutions may be those obtained by adding an appropriate amount of a water-soluble organic solvent, for example, alcohols such as methanol and ethanol, and a surfactant.

[Step (6)]
In this step, a pattern is formed on the substrate to be processed by dry etching one or more times using the resist pattern as a mask. Dry etching can be performed using a known dry etching apparatus. The source gas during dry etching depends on the elemental composition of the object to be etched, but includes oxygen atoms such as O ₂ , CO, and CO ₂ , inert gases such as He, N ₂ , and Ar, Cl ₂ , chlorine gas such as BCl ₄ , fluorine gas such as CHF ₃ and CF ₄ , gas of H ₂ and NH ₃ , etc. can be used. In addition, these gases can also be mixed and used.

  EXAMPLES Hereinafter, although this invention is explained in full detail based on an Example, this invention is not interpreted limitedly to this Example.

<Preparation of composition for forming metal oxide film>
[Example 1]
An ammonium metatungstate aqueous solution was prepared by dissolving 8.58 g of ammonium metatungstate (manufactured by Nippon Inorganic Chemical Industry, 90.8% by mass in terms of WO ₃ ) in 112.1 g of ion-exchanged water. A column with an inner diameter of 30 mm was packed with 200 cm ³ of proton type cation exchange resin (Amberlite 200CT, manufactured by Rohm and Haas). The prepared aqueous solution of ammonium metatungstate was passed through about 10 cm 3 ^/ min to 20 cm 3 ^/ min to the cation exchange resin, pH after elution started collected at the time of exhibiting acidic, ammonium metatungstate After completion of the supply of the aqueous solution, ion-exchanged water was further supplied, and the recovery was completed when the eluate returned to neutral again. Furthermore, it prepared so that the tungstic acid density | concentration in aqueous solution might be 4 mass%. The recovered tungstic acid aqueous solution was about 200 g. To 100 g of the obtained eluate, 10 g (31% by mass) of hydrogen peroxide was added and stirred at room temperature for 1 hour. Thereafter, the solution was heated to 95 ° C. and stirred for 1.5 hours. After cooling to room temperature, pure water as the [C] solvent was added to the transparent solution as the [A] compound to obtain a peroxytungstic acid solution. To 100 g of this peroxytungstic acid solution, 1 g of a nonionic acetylene group-containing surfactant (Shinfin Chemical Co., Surfinol 465) as a [B] surfactant was added to prepare a metal oxide film forming composition.

[Comparative Example 1]
A composition for forming a metal oxide film was prepared in the same manner as in Example 1 except that the surfactant was not contained.

<Uniform coatability>
Each of the prepared compositions for forming a metal oxide film was applied to a 5 cm square silicon wafer (substrate A) and a 5 cm square silicon wafer (substrate B) coated with polydimethylsiloxane resin, and the uniform coating property was evaluated. As a coating method, about 1 cc of each metal oxide film forming composition was dropped on the substrates A and B, and then the substrate was rotated at 1,000 rpm with a spin coater (manufactured by Mikasa, MS-A100). . The uniform coatability after coating was confirmed visually. When the coating film was uniformly formed, the uniform coating property was judged to be good, and when the coating film was not uniformly formed, the uniform coating property was judged to be poor.

  As a result, the uniform coating property of the composition for forming a metal oxide film of Example 1 was good in both the substrates A and B. On the other hand, for the metal oxide film forming composition of Comparative Example 1, the uniform application property to the substrate A was good, but the uniform application property to the substrate B was poor.

  The present invention can provide a metal oxide film-forming composition having good uniform coating properties on various substrates. Therefore, the composition for forming a metal oxide film can be suitably used for forming a resist pattern in a lithography process that is expected to be further miniaturized in the future.

Claims (8)

At least one metal element selected from the group consisting of metal elements of [A] atomic number 23 to 78 and ^{(a), - O-O} -, - O-S -, - O-O-SO 2 -O - _{^{, - O-SO 2 -O-}} O-SO 2 -O - and ^{- O-C (= O)} -O-O - compound containing at least one ligand (b) selected from the group consisting of ,
[B] a surfactant, and [C] a solvent ,
A composition for forming a metal oxide film, which is used for forming a metal oxide film as a resist underlayer film formed on an inorganic film .   The composition for forming a metal oxide film according to claim 1, wherein the metal element (a) is at least one metal element selected from the group consisting of zirconium, molybdenum, hafnium, and tungsten. [A] the compound is
At least one selected from the group consisting of metal simple substance of metal element (a), metal oxoacid, metal oxoacid salt, metal oxide, metal hydroxide, metal alkoxide, metal halide and metal oxyhalide,
3. The metal oxide film according to claim 1, wherein the metal oxide film is a reaction product with at least one compound selected from the group consisting of hydrogen peroxide, thiohydrogen peroxide, persulfuric acid, peroxodisulfuric acid, and percarbonate. Forming composition.   [B] The composition for forming a metal oxide film according to claim 1, wherein the surfactant is a nonionic surfactant.   [B] Content of surfactant is 0.01 mass% or more and 10 mass% or less, The composition for metal oxide film formation of any one of Claims 1-4.   [C] The composition for forming a metal oxide film according to any one of claims 1 to 5, wherein the solvent contains 80% by mass or more of an organic solvent.   The composition for forming a metal oxide film according to any one of claims 1 to 6, which is used in a multilayer resist process. Forming a metal oxide film on a substrate having at least a surface layer of an inorganic film; and
Forming a resist film on the metal oxide film;
With
The pattern formation method using the composition for metal oxide film formation of any one of Claim 1 to 7 for formation of the said metal oxide film.