SG11201402372TA - An atomic layer deposition reactor for processing a batch of substrates and method thereof - Google Patents

An atomic layer deposition reactor for processing a batch of substrates and method thereof

Info

Publication number
SG11201402372TA
SG11201402372TA SG11201402372TA SG11201402372TA SG11201402372TA SG 11201402372T A SG11201402372T A SG 11201402372TA SG 11201402372T A SG11201402372T A SG 11201402372TA SG 11201402372T A SG11201402372T A SG 11201402372TA SG 11201402372T A SG11201402372T A SG 11201402372TA
Authority
SG
Singapore
Prior art keywords
batch
substrates
processing
atomic layer
layer deposition
Prior art date
Application number
SG11201402372TA
Other languages
English (en)
Inventor
Sven Lindfors
Pekka J Soininen
Original Assignee
Picosun Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picosun Oy filed Critical Picosun Oy
Publication of SG11201402372TA publication Critical patent/SG11201402372TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
SG11201402372TA 2011-11-22 2011-11-22 An atomic layer deposition reactor for processing a batch of substrates and method thereof SG11201402372TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2011/051017 WO2013076347A1 (en) 2011-11-22 2011-11-22 An atomic layer deposition reactor for processing a batch of substrates and method thereof

Publications (1)

Publication Number Publication Date
SG11201402372TA true SG11201402372TA (en) 2014-06-27

Family

ID=48469186

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402372TA SG11201402372TA (en) 2011-11-22 2011-11-22 An atomic layer deposition reactor for processing a batch of substrates and method thereof

Country Status (10)

Country Link
US (1) US20140335267A1 (enExample)
EP (1) EP2783023B1 (enExample)
JP (1) JP5927305B2 (enExample)
KR (2) KR20140096365A (enExample)
CN (1) CN103946418A (enExample)
IN (1) IN2014DN04032A (enExample)
RU (1) RU2586956C2 (enExample)
SG (1) SG11201402372TA (enExample)
TW (1) TWI555874B (enExample)
WO (1) WO2013076347A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627789B2 (ja) 1988-09-07 1997-07-09 本田技研工業株式会社 複数ベアリングの同時圧入装置
SG11201509725WA (en) * 2013-06-27 2015-12-30 Picosun Oy Anti-counterfeit signature
JP6346022B2 (ja) * 2013-07-31 2018-06-20 京セラ株式会社 薄膜形成方法および太陽電池素子の製造方法
US20190194809A1 (en) * 2016-09-16 2019-06-27 Picosun Oy Apparatus and methods for atomic layer deposition
RU172394U1 (ru) * 2017-01-13 2017-07-06 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Устройство для атомно-слоевого осаждения
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)
CN111850518B (zh) * 2020-07-21 2024-07-19 理想万里晖半导体设备(上海)股份有限公司 托盘预热腔及对应的pecvd设备
KR102581325B1 (ko) * 2020-12-22 2023-09-22 한국전자기술연구원 배치 타입 원자층 증착 장치
FI130543B (en) * 2021-08-13 2023-11-08 Beneq Oy An atomic layer deposition apparatus and method
FI131711B1 (en) * 2022-03-30 2025-10-08 Beneq Oy Reaction chamber, atomic layer growth equipment and method
CN115404464A (zh) * 2022-09-23 2022-11-29 江苏微导纳米科技股份有限公司 沉积薄膜的方法和设备、薄膜以及太阳能电池

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US5122391A (en) * 1991-03-13 1992-06-16 Watkins-Johnson Company Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD
KR100347379B1 (ko) * 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
US6475276B1 (en) * 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
JP4089113B2 (ja) * 1999-12-28 2008-05-28 株式会社Ｉｈｉ 薄膜作成装置
WO2003038145A2 (en) * 2001-10-29 2003-05-08 Genus, Inc. Chemical vapor deposition system
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
KR20050004379A (ko) * 2003-07-02 2005-01-12 삼성전자주식회사 원자층 증착용 가스 공급 장치
RU2261289C1 (ru) * 2004-06-08 2005-09-27 Государственное научное учреждение "Научно-исследовательский институт ядерной физики при Томском политехническом университете министерства образования Российской Федерации" Устройство для нанесения многослойных токопроводящих покрытий на изделия из диэлектрических материалов и источник ионов для него
US7833351B2 (en) * 2006-06-26 2010-11-16 Applied Materials, Inc. Batch processing platform for ALD and CVD
JP4927623B2 (ja) * 2007-03-30 2012-05-09 東京エレクトロン株式会社 ロードロック装置の昇圧方法
US8367560B2 (en) * 2007-06-15 2013-02-05 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method
NL1036164A1 (nl) * 2007-11-15 2009-05-18 Asml Netherlands Bv Substrate processing apparatus and device manufacturing method.
CN102037794B (zh) * 2008-05-20 2013-02-13 3M创新有限公司 在不定长幅材上连续烧结的方法
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US8440048B2 (en) * 2009-01-28 2013-05-14 Asm America, Inc. Load lock having secondary isolation chamber

Also Published As

Publication number Publication date
US20140335267A1 (en) 2014-11-13
JP2015505899A (ja) 2015-02-26
TWI555874B (zh) 2016-11-01
EP2783023A4 (en) 2015-06-24
RU2586956C2 (ru) 2016-06-10
KR20140096365A (ko) 2014-08-05
EP2783023B1 (en) 2020-11-04
RU2014124039A (ru) 2015-12-27
JP5927305B2 (ja) 2016-06-01
KR101696354B1 (ko) 2017-01-23
CN103946418A (zh) 2014-07-23
KR20160105548A (ko) 2016-09-06
TW201323650A (zh) 2013-06-16
IN2014DN04032A (enExample) 2015-05-15
WO2013076347A1 (en) 2013-05-30
EP2783023A1 (en) 2014-10-01

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