SG110123A1 - Non-refresh four-transistor memory cell - Google Patents
Non-refresh four-transistor memory cellInfo
- Publication number
- SG110123A1 SG110123A1 SG200404947A SG200404947A SG110123A1 SG 110123 A1 SG110123 A1 SG 110123A1 SG 200404947 A SG200404947 A SG 200404947A SG 200404947 A SG200404947 A SG 200404947A SG 110123 A1 SG110123 A1 SG 110123A1
- Authority
- SG
- Singapore
- Prior art keywords
- refresh
- memory cell
- transistor memory
- transistor
- cell
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/658,845 US6853579B1 (en) | 2003-09-09 | 2003-09-09 | Non-refresh four-transistor memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG110123A1 true SG110123A1 (en) | 2005-04-28 |
Family
ID=34104769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200404947A SG110123A1 (en) | 2003-09-09 | 2004-09-02 | Non-refresh four-transistor memory cell |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6853579B1 (zh) |
| CN (2) | CN100431047C (zh) |
| SG (1) | SG110123A1 (zh) |
| TW (1) | TWI228723B (zh) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005024897A1 (de) * | 2005-05-31 | 2006-12-07 | Infineon Technologies Ag | Verlustleistungsarme nichtflüchtige Speicherzelle |
| US8213219B2 (en) * | 2009-07-29 | 2012-07-03 | GlobalFoundries, Inc. | Transistor-based memory cell and related operating methods |
| US8339890B2 (en) * | 2010-05-27 | 2012-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory leakage and data retention control |
| TWI437566B (zh) * | 2010-07-07 | 2014-05-11 | Sitronix Technology Corp | Save the circuit area of the memory unit |
| CN101894583B (zh) * | 2010-07-08 | 2016-03-02 | 矽创电子股份有限公司 | 节省电路面积的记忆单元 |
| TWI482154B (zh) * | 2012-11-27 | 2015-04-21 | Univ Nat Sun Yat Sen | 單端無載式靜態隨機存取記憶體 |
| WO2014142332A1 (en) * | 2013-03-14 | 2014-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device and semiconductor device |
| CN103594059B (zh) * | 2013-11-29 | 2017-01-11 | 中国科学院上海高等研究院 | 有源矩阵有机发光二极管像素驱动电路及其驱动方法 |
| CN108806742B (zh) * | 2017-05-04 | 2022-01-04 | 汤朝景 | 随机存取存储器并且具有与其相关的电路、方法以及设备 |
| US10985162B2 (en) * | 2018-12-14 | 2021-04-20 | John Bennett | System for accurate multiple level gain cells |
| US11962928B2 (en) | 2018-12-17 | 2024-04-16 | Meta Platforms Technologies, Llc | Programmable pixel array |
| US11888002B2 (en) | 2018-12-17 | 2024-01-30 | Meta Platforms Technologies, Llc | Dynamically programmable image sensor |
| US11935291B2 (en) | 2019-10-30 | 2024-03-19 | Meta Platforms Technologies, Llc | Distributed sensor system |
| US11948089B2 (en) | 2019-11-07 | 2024-04-02 | Meta Platforms Technologies, Llc | Sparse image sensing and processing |
| US11825228B2 (en) | 2020-05-20 | 2023-11-21 | Meta Platforms Technologies, Llc | Programmable pixel array having multiple power domains |
| US11935575B1 (en) * | 2020-12-23 | 2024-03-19 | Meta Platforms Technologies, Llc | Heterogeneous memory system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69531092T2 (de) * | 1994-12-22 | 2004-04-01 | Cypress Semiconductor Corp., San Jose | Einseitige Simplex-Zweitorspeicherzelle |
| US5640342A (en) * | 1995-11-20 | 1997-06-17 | Micron Technology, Inc. | Structure for cross coupled thin film transistors and static random access memory cell |
| US5605853A (en) * | 1996-05-28 | 1997-02-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of making a semiconductor device having 4 transistor SRAM and floating gate memory cells |
-
2003
- 2003-09-09 US US10/658,845 patent/US6853579B1/en not_active Expired - Fee Related
-
2004
- 2004-01-12 TW TW093100648A patent/TWI228723B/zh not_active IP Right Cessation
- 2004-01-15 CN CNB2004100005938A patent/CN100431047C/zh not_active Expired - Fee Related
- 2004-04-29 CN CN2004200506208U patent/CN2720572Y/zh not_active Expired - Lifetime
- 2004-09-02 SG SG200404947A patent/SG110123A1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN2720572Y (zh) | 2005-08-24 |
| CN100431047C (zh) | 2008-11-05 |
| TW200511313A (en) | 2005-03-16 |
| CN1595532A (zh) | 2005-03-16 |
| TWI228723B (en) | 2005-03-01 |
| US6853579B1 (en) | 2005-02-08 |
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