SG10202011326YA - Resistive memory device controlling bitline voltage - Google Patents
Resistive memory device controlling bitline voltageInfo
- Publication number
- SG10202011326YA SG10202011326YA SG10202011326YA SG10202011326YA SG10202011326YA SG 10202011326Y A SG10202011326Y A SG 10202011326YA SG 10202011326Y A SG10202011326Y A SG 10202011326YA SG 10202011326Y A SG10202011326Y A SG 10202011326YA SG 10202011326Y A SG10202011326Y A SG 10202011326YA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- resistive memory
- device controlling
- bitline voltage
- controlling bitline
- Prior art date
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0038—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
- H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0045—Read using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/75—Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190146180A KR20210058568A (en) | 2019-11-14 | 2019-11-14 | Resistive memory device controlling bitline voltage |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202011326YA true SG10202011326YA (en) | 2021-06-29 |
Family
ID=75683471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202011326YA SG10202011326YA (en) | 2019-11-14 | 2020-11-13 | Resistive memory device controlling bitline voltage |
Country Status (5)
Country | Link |
---|---|
US (1) | US11430515B2 (en) |
KR (1) | KR20210058568A (en) |
CN (1) | CN112802522A (en) |
DE (1) | DE102020122716A1 (en) |
SG (1) | SG10202011326YA (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023044395A (en) * | 2021-09-17 | 2023-03-30 | キオクシア株式会社 | Storage device |
US20230267981A1 (en) | 2022-02-22 | 2023-08-24 | Sandisk Technologies Llc | Cross-point array ihold read margin improvement |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
KR101010175B1 (en) | 2004-04-23 | 2011-01-20 | 주식회사 하이닉스반도체 | Sense amp and phase change memory using the sense amp |
RU2008134702A (en) * | 2006-01-27 | 2010-03-10 | Юниверсити Оф Вирждиния Пэтент Фаундейшн (Us) | METHOD FOR TREATING NEUROPATHIC PAIN |
EP1883113B1 (en) * | 2006-07-27 | 2010-03-10 | STMicroelectronics S.r.l. | Phase change memory device |
US7755922B2 (en) * | 2006-12-29 | 2010-07-13 | Spansion Llc | Non-volatile resistance changing for advanced memory applications |
US8085615B2 (en) * | 2006-12-29 | 2011-12-27 | Spansion Llc | Multi-state resistance changing memory with a word line driver for applying a same program voltage to the word line |
JP4635066B2 (en) * | 2008-03-19 | 2011-02-16 | 株式会社東芝 | Semiconductor memory device |
KR100944322B1 (en) | 2008-08-04 | 2010-03-03 | 주식회사 하이닉스반도체 | Phase change memory device |
US7885101B2 (en) | 2008-12-29 | 2011-02-08 | Numonyx B.V. | Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory |
JP5462490B2 (en) | 2009-01-19 | 2014-04-02 | 株式会社日立製作所 | Semiconductor memory device |
KR101678886B1 (en) | 2009-11-25 | 2016-11-23 | 삼성전자주식회사 | Multi-level Phase-change Memory Device and Operation Method thereof |
JP5568370B2 (en) | 2010-05-10 | 2014-08-06 | 株式会社日立製作所 | Semiconductor device |
US9042152B2 (en) | 2011-08-25 | 2015-05-26 | Samsung Electronics Co., Ltd. | Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device |
KR101917192B1 (en) | 2012-03-12 | 2018-11-12 | 삼성전자주식회사 | Nonvolatile memory device and reading method of nonvolatile memory device |
KR101983274B1 (en) | 2012-05-18 | 2019-05-30 | 삼성전자주식회사 | PCRAM : Phase Change Random Access Memory device and Method for sensing threrof |
US9093369B2 (en) | 2012-06-07 | 2015-07-28 | Samsung Electronics Co., Ltd. | Three-dimensional resistive random access memory devices, methods of operating the same, and methods of fabricating the same |
KR20150021376A (en) | 2013-08-20 | 2015-03-02 | 에스케이하이닉스 주식회사 | Electronic device |
US9922719B2 (en) | 2015-06-07 | 2018-03-20 | Sandisk Technologies Llc | Multi-VT sensing method by varying bit line voltage |
US10490270B2 (en) * | 2015-10-28 | 2019-11-26 | Hewlett Packard Enterprise Development Lp | Reference column sensing for resistive memory |
KR102461730B1 (en) | 2016-08-29 | 2022-11-02 | 에스케이하이닉스 주식회사 | Memory device and operating method thereof |
KR102354286B1 (en) * | 2019-03-15 | 2022-01-24 | 서울대학교 산학협력단 | Synapse string and synapse string array for neural networks |
JP7273599B2 (en) * | 2019-04-10 | 2023-05-15 | ルネサスエレクトロニクス株式会社 | Semiconductor device and memory reading method |
-
2019
- 2019-11-14 KR KR1020190146180A patent/KR20210058568A/en active Search and Examination
-
2020
- 2020-08-31 DE DE102020122716.7A patent/DE102020122716A1/en active Pending
- 2020-09-29 US US17/036,004 patent/US11430515B2/en active Active
- 2020-11-12 CN CN202011259565.3A patent/CN112802522A/en active Pending
- 2020-11-13 SG SG10202011326YA patent/SG10202011326YA/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20210058568A (en) | 2021-05-24 |
US11430515B2 (en) | 2022-08-30 |
US20210151101A1 (en) | 2021-05-20 |
DE102020122716A1 (en) | 2021-05-20 |
CN112802522A (en) | 2021-05-14 |
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