SG10202004567SA - Plasma processing method and plasma processing apparatus - Google Patents

Plasma processing method and plasma processing apparatus

Info

Publication number
SG10202004567SA
SG10202004567SA SG10202004567SA SG10202004567SA SG10202004567SA SG 10202004567S A SG10202004567S A SG 10202004567SA SG 10202004567S A SG10202004567S A SG 10202004567SA SG 10202004567S A SG10202004567S A SG 10202004567SA SG 10202004567S A SG10202004567S A SG 10202004567SA
Authority
SG
Singapore
Prior art keywords
plasma processing
processing apparatus
processing method
plasma
processing
Prior art date
Application number
SG10202004567SA
Other languages
English (en)
Inventor
Koshimizu Chishio
Hirotsu Shin
Ikeda Takenobu
Nagami Koichi
Himori Shinji
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10202004567SA publication Critical patent/SG10202004567SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
    • H01H1/36—Contacts characterised by the manner in which co-operating contacts engage by sliding
    • H01H1/46—Contacts characterised by the manner in which co-operating contacts engage by sliding self-aligning contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/01—Handling plasma, e.g. of subatomic particles

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
SG10202004567SA 2019-05-28 2020-05-18 Plasma processing method and plasma processing apparatus SG10202004567SA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019099249A JP7234036B2 (ja) 2019-05-28 2019-05-28 プラズマ処理方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
SG10202004567SA true SG10202004567SA (en) 2020-12-30

Family

ID=73506845

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202004567SA SG10202004567SA (en) 2019-05-28 2020-05-18 Plasma processing method and plasma processing apparatus

Country Status (6)

Country Link
US (2) US11764034B2 (ja)
JP (2) JP7234036B2 (ja)
KR (1) KR20200136821A (ja)
CN (1) CN112017937A (ja)
SG (1) SG10202004567SA (ja)
TW (1) TW202046827A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110648888B (zh) * 2018-06-27 2020-10-13 北京北方华创微电子装备有限公司 射频脉冲匹配方法及其装置、脉冲等离子体产生系统
JP7458287B2 (ja) 2020-10-06 2024-03-29 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TW202304258A (zh) * 2021-02-01 2023-01-16 日商東京威力科創股份有限公司 濾波電路及電漿處理裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
JP5224837B2 (ja) 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5231038B2 (ja) * 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
JP2009239012A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマエッチング方法
JP2011162830A (ja) 2010-02-09 2011-08-25 Fuji Electric Co Ltd プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置
JP2011211168A (ja) * 2010-03-09 2011-10-20 Toshiba Corp 半導体装置の製造方法及び半導体製造装置
JP6224958B2 (ja) * 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US10047438B2 (en) 2014-06-10 2018-08-14 Lam Research Corporation Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas
JP6512962B2 (ja) 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
JP6567943B2 (ja) * 2015-01-09 2019-08-28 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR20190014623A (ko) * 2017-08-03 2019-02-13 삼성전자주식회사 플라즈마 공정 장치 및 이를 이용한 반도체 장치 제조 방법
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
JP2023059948A (ja) 2023-04-27
JP7234036B2 (ja) 2023-03-07
KR20200136821A (ko) 2020-12-08
US11764034B2 (en) 2023-09-19
JP2020194868A (ja) 2020-12-03
US20240006154A1 (en) 2024-01-04
JP7403015B2 (ja) 2023-12-21
TW202046827A (zh) 2020-12-16
CN112017937A (zh) 2020-12-01
US20200381215A1 (en) 2020-12-03

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