SG10201911815YA - Baffle unit and substrate processing apparatus including the same - Google Patents

Baffle unit and substrate processing apparatus including the same

Info

Publication number
SG10201911815YA
SG10201911815YA SG10201911815YA SG10201911815YA SG10201911815YA SG 10201911815Y A SG10201911815Y A SG 10201911815YA SG 10201911815Y A SG10201911815Y A SG 10201911815YA SG 10201911815Y A SG10201911815Y A SG 10201911815YA SG 10201911815Y A SG10201911815Y A SG 10201911815YA
Authority
SG
Singapore
Prior art keywords
processing apparatus
same
substrate processing
apparatus including
baffle unit
Prior art date
Application number
SG10201911815YA
Inventor
Jung Hyun Kang
Original Assignee
Psk Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psk Inc filed Critical Psk Inc
Publication of SG10201911815YA publication Critical patent/SG10201911815YA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32633Baffles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201911815YA 2019-11-14 2019-12-09 Baffle unit and substrate processing apparatus including the same SG10201911815YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020190145721A KR102225657B1 (en) 2019-11-14 2019-11-14 Baffle unit, substrate processing apparatus including the same

Publications (1)

Publication Number Publication Date
SG10201911815YA true SG10201911815YA (en) 2021-06-29

Family

ID=75147738

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201911815YA SG10201911815YA (en) 2019-11-14 2019-12-09 Baffle unit and substrate processing apparatus including the same

Country Status (6)

Country Link
US (1) US20210151299A1 (en)
JP (2) JP6981460B2 (en)
KR (1) KR102225657B1 (en)
CN (1) CN112802730B (en)
SG (1) SG10201911815YA (en)
TW (1) TWI716204B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240098299A (en) * 2022-12-21 2024-06-28 피에스케이 주식회사 Substrate processing apparatus and baffles
CN117612978B (en) * 2024-01-23 2024-04-05 上海邦芯半导体科技有限公司 Air inlet device and air inlet method

Family Cites Families (26)

* Cited by examiner, † Cited by third party
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JPH0689457B2 (en) * 1987-12-14 1994-11-09 古河電気工業株式会社 Shower electrode for plasma CVD equipment
US5589002A (en) * 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
JPH0845910A (en) * 1994-07-29 1996-02-16 Nippon Steel Corp Plasma treatment device
JP3290036B2 (en) * 1994-10-18 2002-06-10 菱電セミコンダクタシステムエンジニアリング株式会社 Dry etching apparatus and dry etching method
JPH09223685A (en) * 1996-02-14 1997-08-26 Sony Corp Plasma processing apparatus and plasma processing method
US6335293B1 (en) * 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
KR100290511B1 (en) * 1999-03-27 2001-05-15 윤영세 A separated upper electrode
JP3317935B2 (en) * 1999-09-01 2002-08-26 九州日本電気株式会社 Plasma processing equipment
JP4669137B2 (en) * 2001-02-16 2011-04-13 東京エレクトロン株式会社 Dividable electrode and plasma processing apparatus using the electrode
JP4115337B2 (en) * 2003-05-30 2008-07-09 俊夫 後藤 Plasma processing equipment
KR100893955B1 (en) * 2004-02-19 2009-04-20 도쿄엘렉트론가부시키가이샤 Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning
US20050241767A1 (en) * 2004-04-30 2005-11-03 Ferris David S Multi-piece baffle plate assembly for a plasma processing system
JP4877748B2 (en) * 2006-03-31 2012-02-15 東京エレクトロン株式会社 Substrate processing apparatus and processing gas discharge mechanism
US8715455B2 (en) * 2007-02-06 2014-05-06 Tokyo Electron Limited Multi-zone gas distribution system for a treatment system
JPWO2008114363A1 (en) * 2007-03-16 2010-06-24 富士通マイクロエレクトロニクス株式会社 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
US8419854B2 (en) * 2007-04-17 2013-04-16 Ulvac, Inc. Film-forming apparatus
CN101548364B (en) * 2007-08-28 2013-02-06 东京毅力科创株式会社 Top panel and plasma processing apparatus
JP2012519956A (en) * 2009-03-03 2012-08-30 ジュソン エンジニアリング カンパニー リミテッド Gas distribution apparatus and substrate processing apparatus having the same
KR101234594B1 (en) * 2011-07-25 2013-02-19 피에스케이 주식회사 Baffle and substrate treating apparatus including the baffle
KR101505536B1 (en) * 2012-05-14 2015-03-25 피에스케이 주식회사 A baffle and an apparatus for treating a substrate with the baffle
JP2014075234A (en) * 2012-10-03 2014-04-24 Tokyo Electron Ltd Antenna and plasma processing apparatus
US9245761B2 (en) * 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
KR101505948B1 (en) * 2013-12-16 2015-03-26 피에스케이 주식회사 A baffle assembly and an apparatus for treating a substrate with the baffle
JP2016039356A (en) * 2014-08-06 2016-03-22 ピーエスケー・インコーポレーテッド Baffle and substrate treating apparatus including the same
KR20180014900A (en) * 2016-08-01 2018-02-12 세메스 주식회사 Apparatus for treating substrate
KR101932117B1 (en) * 2017-08-11 2018-12-24 피에스케이 주식회사 Substrate treating apparatus, substrate treating method and plasma generating unit

Also Published As

Publication number Publication date
JP7190540B2 (en) 2022-12-15
CN112802730B (en) 2024-03-12
KR102225657B1 (en) 2021-03-10
TWI716204B (en) 2021-01-11
TW202119872A (en) 2021-05-16
CN112802730A (en) 2021-05-14
JP6981460B2 (en) 2021-12-15
JP2021082798A (en) 2021-05-27
JP2021180318A (en) 2021-11-18
US20210151299A1 (en) 2021-05-20

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