SG10201911724QA - Vertical semiconductor device and method for fabricating the vertical semiconductor device - Google Patents
Vertical semiconductor device and method for fabricating the vertical semiconductor deviceInfo
- Publication number
- SG10201911724QA SG10201911724QA SG10201911724QA SG10201911724QA SG10201911724QA SG 10201911724Q A SG10201911724Q A SG 10201911724QA SG 10201911724Q A SG10201911724Q A SG 10201911724QA SG 10201911724Q A SG10201911724Q A SG 10201911724QA SG 10201911724Q A SG10201911724Q A SG 10201911724QA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- vertical semiconductor
- fabricating
- vertical
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76823—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. transforming an insulating layer into a conductive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190042570A KR102671289B1 (en) | 2019-04-11 | 2019-04-11 | Vertical semiconductor device and method for fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201911724QA true SG10201911724QA (en) | 2020-11-27 |
Family
ID=72613087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201911724QA SG10201911724QA (en) | 2019-04-11 | 2019-12-05 | Vertical semiconductor device and method for fabricating the vertical semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (3) | US11244956B2 (en) |
KR (1) | KR102671289B1 (en) |
CN (1) | CN111816662B (en) |
DE (1) | DE102019220519A1 (en) |
SG (1) | SG10201911724QA (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021034696A (en) * | 2019-08-29 | 2021-03-01 | キオクシア株式会社 | Semiconductor storage device |
US11348939B2 (en) * | 2019-12-20 | 2022-05-31 | Micron Technology, Inc. | Integrated assemblies, and methods of forming integrated assemblies |
US11257834B2 (en) * | 2020-01-15 | 2022-02-22 | Micron Technology, Inc. | Microelectronic devices including corrosion containment features, and related electronic systems and methods |
KR20220078343A (en) | 2020-12-03 | 2022-06-10 | 에스케이하이닉스 주식회사 | Semiconductor memory device and manufacturing method thereof |
US11950416B2 (en) * | 2021-02-01 | 2024-04-02 | Micron Technology, Inc. | Integrated assemblies and methods of forming integrated assemblies |
KR20220135825A (en) * | 2021-03-31 | 2022-10-07 | 에스케이하이닉스 주식회사 | Method for fabricating semiconductor device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101698193B1 (en) * | 2009-09-15 | 2017-01-19 | 삼성전자주식회사 | Three Dimensional Semiconductor Memory Device And Method Of Fabricating The Same |
KR20160020210A (en) * | 2014-08-13 | 2016-02-23 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method thereof |
US9508730B2 (en) * | 2015-03-11 | 2016-11-29 | SK Hynix Inc. | Semiconductor device and manufacturing method thereof |
KR102332359B1 (en) | 2015-05-19 | 2021-11-29 | 삼성전자주식회사 | Vertical memory devices |
KR102543998B1 (en) * | 2015-12-03 | 2023-06-16 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method thereof |
KR102549452B1 (en) * | 2016-03-31 | 2023-06-30 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method thereof |
KR102630947B1 (en) | 2016-04-20 | 2024-01-31 | 에스케이하이닉스 주식회사 | Manufacturing method of memory device |
KR102606822B1 (en) * | 2016-06-30 | 2023-11-29 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method thereof |
US9985098B2 (en) * | 2016-11-03 | 2018-05-29 | Sandisk Technologies Llc | Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device |
KR20180135526A (en) * | 2017-06-12 | 2018-12-21 | 삼성전자주식회사 | Semiconductor memory device and manufactureing the same |
US10438964B2 (en) * | 2017-06-26 | 2019-10-08 | Sandisk Technologies Llc | Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof |
KR101826217B1 (en) * | 2017-07-25 | 2018-03-23 | 삼성전자주식회사 | Therr dimensional semiconductor memory devices and methods of fabricating the same |
JP2019041054A (en) * | 2017-08-28 | 2019-03-14 | 東芝メモリ株式会社 | Semiconductor device |
KR102629202B1 (en) | 2018-04-23 | 2024-01-26 | 삼성전자주식회사 | Three-dimensional semiconductor devices |
-
2019
- 2019-04-11 KR KR1020190042570A patent/KR102671289B1/en active IP Right Grant
- 2019-11-11 US US16/680,219 patent/US11244956B2/en active Active
- 2019-11-27 CN CN201911179080.0A patent/CN111816662B/en active Active
- 2019-12-05 SG SG10201911724QA patent/SG10201911724QA/en unknown
- 2019-12-23 DE DE102019220519.4A patent/DE102019220519A1/en active Pending
-
2022
- 2022-01-03 US US17/567,423 patent/US11751395B2/en active Active
-
2023
- 2023-08-09 US US18/446,827 patent/US20230403855A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN111816662B (en) | 2024-04-05 |
US20230403855A1 (en) | 2023-12-14 |
KR20200120112A (en) | 2020-10-21 |
KR102671289B1 (en) | 2024-06-03 |
CN111816662A (en) | 2020-10-23 |
US11751395B2 (en) | 2023-09-05 |
DE102019220519A1 (en) | 2020-10-15 |
US11244956B2 (en) | 2022-02-08 |
US20200328226A1 (en) | 2020-10-15 |
US20220123020A1 (en) | 2022-04-21 |
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