SG10201911041XA - Light emitting diodes with n-polarity and associated methods of manufacturing - Google Patents
Light emitting diodes with n-polarity and associated methods of manufacturingInfo
- Publication number
- SG10201911041XA SG10201911041XA SG10201911041XA SG10201911041XA SG10201911041XA SG 10201911041X A SG10201911041X A SG 10201911041XA SG 10201911041X A SG10201911041X A SG 10201911041XA SG 10201911041X A SG10201911041X A SG 10201911041XA SG 10201911041X A SG10201911041X A SG 10201911041XA
- Authority
- SG
- Singapore
- Prior art keywords
- polarity
- manufacturing
- light emitting
- emitting diodes
- associated methods
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/714,262 US9705028B2 (en) | 2010-02-26 | 2010-02-26 | Light emitting diodes with N-polarity and associated methods of manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201911041XA true SG10201911041XA (en) | 2020-01-30 |
Family
ID=44504835
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201503883XA SG10201503883XA (en) | 2010-02-26 | 2011-02-25 | Light emitting diodes with n-polarity and associated methods of manufacturing |
| SG10201911041XA SG10201911041XA (en) | 2010-02-26 | 2011-02-25 | Light emitting diodes with n-polarity and associated methods of manufacturing |
| SG2012062196A SG183447A1 (en) | 2010-02-26 | 2011-02-25 | Light emitting diodes with n-polarity and associated methods of manufacturing |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201503883XA SG10201503883XA (en) | 2010-02-26 | 2011-02-25 | Light emitting diodes with n-polarity and associated methods of manufacturing |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012062196A SG183447A1 (en) | 2010-02-26 | 2011-02-25 | Light emitting diodes with n-polarity and associated methods of manufacturing |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US9705028B2 (en) |
| JP (1) | JP2013521632A (en) |
| KR (1) | KR20120125553A (en) |
| SG (3) | SG10201503883XA (en) |
| TW (1) | TWI435476B (en) |
| WO (1) | WO2011106609A2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9705028B2 (en) | 2010-02-26 | 2017-07-11 | Micron Technology, Inc. | Light emitting diodes with N-polarity and associated methods of manufacturing |
| US10446681B2 (en) | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
| US10297611B1 (en) | 2017-12-27 | 2019-05-21 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
| US10559466B2 (en) | 2017-12-27 | 2020-02-11 | Micron Technology, Inc. | Methods of forming a channel region of a transistor and methods used in forming a memory array |
| JP7202604B2 (en) * | 2018-10-23 | 2023-01-12 | 国立大学法人東海国立大学機構 | III-nitride semiconductor device, manufacturing method thereof, semiconductor wafer manufacturing method, and template substrate manufacturing method |
| US11538919B2 (en) | 2021-02-23 | 2022-12-27 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
| CN113410350B (en) * | 2021-06-15 | 2022-08-19 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet light-emitting element and preparation method thereof |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05121329A (en) * | 1991-10-30 | 1993-05-18 | Toshiba Corp | Method and apparatus for manufacturing compound thin film |
| JP2820113B2 (en) * | 1996-04-11 | 1998-11-05 | 日本電気株式会社 | Atomic mask and pattern forming method using the same |
| TW420835B (en) * | 1997-06-16 | 2001-02-01 | Matsushita Electric Ind Co Ltd | Semiconductor manufacture method and manufacturing device therefor |
| JPH1174199A (en) | 1997-06-16 | 1999-03-16 | Matsushita Electric Ind Co Ltd | Semiconductor manufacture and manufacturing device therefor |
| US6176925B1 (en) * | 1999-05-07 | 2001-01-23 | Cbl Technologies, Inc. | Detached and inverted epitaxial regrowth & methods |
| JP4259709B2 (en) * | 1999-12-27 | 2009-04-30 | シャープ株式会社 | Quantum well active layer |
| US6391748B1 (en) | 2000-10-03 | 2002-05-21 | Texas Tech University | Method of epitaxial growth of high quality nitride layers on silicon substrates |
| JP4206629B2 (en) | 2000-10-04 | 2009-01-14 | パナソニック株式会社 | Semiconductor device manufacturing method, semiconductor device, and semiconductor substrate manufacturing method |
| JP3592300B2 (en) | 2002-02-04 | 2004-11-24 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
| JP2004140339A (en) * | 2002-09-25 | 2004-05-13 | Univ Chiba | Device having nitride-based heterostructure and its manufacturing method |
| JP4342853B2 (en) * | 2003-07-01 | 2009-10-14 | 独立行政法人科学技術振興機構 | Method of growing nitride thin film on substrate and nitride thin film device |
| JP4495471B2 (en) * | 2004-01-13 | 2010-07-07 | 三星電子株式会社 | Etching method |
| US8089093B2 (en) * | 2004-02-20 | 2012-01-03 | Nichia Corporation | Nitride semiconductor device including different concentrations of impurities |
| JP4200115B2 (en) | 2004-03-26 | 2008-12-24 | 北川工業株式会社 | Carbon-doped semiconductor film, semiconductor element, and manufacturing method thereof |
| US7955646B2 (en) * | 2004-08-09 | 2011-06-07 | Applied Materials, Inc. | Elimination of flow and pressure gradients in low utilization processes |
| JP2006135001A (en) | 2004-11-04 | 2006-05-25 | Sony Corp | Semiconductor element and its manufacturing method |
| US8334155B2 (en) * | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
| JP2007103460A (en) * | 2005-09-30 | 2007-04-19 | Sanyo Electric Co Ltd | Semiconductor laser device and its manufacturing method |
| JP2007157765A (en) | 2005-11-30 | 2007-06-21 | Rohm Co Ltd | Gallium nitride semiconductor light emitting element |
| CN100547819C (en) * | 2006-08-15 | 2009-10-07 | 中国科学院物理研究所 | The gallium nitride LED chip of hypopolarization effect is with epitaxial material and method for making |
| WO2008041499A1 (en) * | 2006-09-29 | 2008-04-10 | Showa Denko K.K. | Filming method for iii-group nitride semiconductor laminated structure |
| EP2087507A4 (en) * | 2006-11-15 | 2010-07-07 | Univ California | Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition |
| US8193020B2 (en) | 2006-11-15 | 2012-06-05 | The Regents Of The University Of California | Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
| US20090085065A1 (en) * | 2007-03-29 | 2009-04-02 | The Regents Of The University Of California | Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removal |
| JP2011501409A (en) * | 2007-10-10 | 2011-01-06 | イザ，マイケル | Chemical vapor deposition reaction chamber |
| JP2009099798A (en) * | 2007-10-17 | 2009-05-07 | Toshiba Corp | Nitride-based semiconductor, and its manufacturing method |
| US8008181B2 (en) * | 2008-08-22 | 2011-08-30 | The Regents Of The University Of California | Propagation of misfit dislocations from buffer/Si interface into Si |
| KR101018179B1 (en) * | 2008-10-16 | 2011-02-28 | 삼성엘이디 주식회사 | Method for forming pattern of group ? nitride semiconductor substrate and manufaturing method of group ? nitride semiconductor light emitting device |
| US9705028B2 (en) * | 2010-02-26 | 2017-07-11 | Micron Technology, Inc. | Light emitting diodes with N-polarity and associated methods of manufacturing |
-
2010
- 2010-02-26 US US12/714,262 patent/US9705028B2/en active Active
-
2011
- 2011-02-25 SG SG10201503883XA patent/SG10201503883XA/en unknown
- 2011-02-25 TW TW100106518A patent/TWI435476B/en active
- 2011-02-25 WO PCT/US2011/026192 patent/WO2011106609A2/en active Application Filing
- 2011-02-25 KR KR1020127025133A patent/KR20120125553A/en active Search and Examination
- 2011-02-25 SG SG10201911041XA patent/SG10201911041XA/en unknown
- 2011-02-25 SG SG2012062196A patent/SG183447A1/en unknown
- 2011-02-25 JP JP2012555176A patent/JP2013521632A/en active Pending
-
2017
- 2017-06-23 US US15/631,836 patent/US11049994B2/en active Active
-
2021
- 2021-06-28 US US17/360,350 patent/US11843072B2/en active Active
-
2023
- 2023-12-11 US US18/535,966 patent/US20240128396A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SG183447A1 (en) | 2012-09-27 |
| US20210328094A1 (en) | 2021-10-21 |
| US20110210353A1 (en) | 2011-09-01 |
| KR20120125553A (en) | 2012-11-15 |
| TWI435476B (en) | 2014-04-21 |
| WO2011106609A3 (en) | 2011-12-29 |
| US20170288089A1 (en) | 2017-10-05 |
| WO2011106609A2 (en) | 2011-09-01 |
| US11843072B2 (en) | 2023-12-12 |
| US11049994B2 (en) | 2021-06-29 |
| US9705028B2 (en) | 2017-07-11 |
| CN102834938A (en) | 2012-12-19 |
| SG10201503883XA (en) | 2015-06-29 |
| JP2013521632A (en) | 2013-06-10 |
| TW201145583A (en) | 2011-12-16 |
| US20240128396A1 (en) | 2024-04-18 |
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