SG10201908064UA - Defect Detection Structure Of A Semiconductor Die, Semiconductor Device Including The Same And Method Of Detecting Defects In Semiconductor Die - Google Patents
Defect Detection Structure Of A Semiconductor Die, Semiconductor Device Including The Same And Method Of Detecting Defects In Semiconductor DieInfo
- Publication number
- SG10201908064UA SG10201908064UA SG10201908064UA SG10201908064UA SG10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor die
- device including
- same
- defect detection
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/3181—Functional testing
- G01R31/3187—Built-in tests
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020180111542A KR102576394B1 (en) | 2018-09-18 | 2018-09-18 | Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201908064UA true SG10201908064UA (en) | 2020-04-29 |
Family
ID=69773015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201908064UA SG10201908064UA (en) | 2018-09-18 | 2019-09-02 | Defect Detection Structure Of A Semiconductor Die, Semiconductor Device Including The Same And Method Of Detecting Defects In Semiconductor Die |
Country Status (4)
Country | Link |
---|---|
US (2) | US11062966B2 (en) |
KR (1) | KR102576394B1 (en) |
CN (1) | CN110911386B (en) |
SG (1) | SG10201908064UA (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102576394B1 (en) * | 2018-09-18 | 2023-09-08 | 삼성전자주식회사 | Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die |
CN111678928B (en) * | 2020-06-09 | 2021-03-30 | 长江存储科技有限责任公司 | Method and apparatus for analyzing semiconductor structure |
CN113936730B (en) | 2020-07-13 | 2022-10-14 | 长鑫存储技术有限公司 | Test method, test system and test equipment for semiconductor chip |
KR20220014590A (en) | 2020-07-29 | 2022-02-07 | 삼성전자주식회사 | Semiconductor device including defect detection circuit and method of detecting defects in the same |
US11804412B2 (en) | 2021-01-22 | 2023-10-31 | Changxin Memory Technologies, Inc. | Circuit for detecting crack damage of a die, method for detecting crack, and memory |
CN112908879B (en) * | 2021-01-22 | 2022-06-03 | 长鑫存储技术有限公司 | Bare chip crack damage detection circuit, crack detection method and memory |
KR20220128718A (en) | 2021-03-15 | 2022-09-22 | 에스케이하이닉스 주식회사 | Semiconductor Device Having a Crack Detection Ring and a Crack Detection Structure |
CN113269775B (en) * | 2021-06-11 | 2022-10-28 | 河南理工大学 | Defect detection method and device based on multi-scale feature fusion SSD |
KR20230052752A (en) | 2021-10-13 | 2023-04-20 | 에스케이하이닉스 주식회사 | Semiconductor devices including crack sensor |
KR20240064102A (en) * | 2022-11-04 | 2024-05-13 | 삼성전자주식회사 | Semiconductor device including detection structure |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005347651A (en) | 2004-06-07 | 2005-12-15 | Matsushita Electric Ind Co Ltd | Wiring board and crack detecting method of wiring board |
JP4202970B2 (en) * | 2004-06-10 | 2008-12-24 | 株式会社東芝 | Semiconductor device and manufacturing method thereof, and defect detection method of semiconductor device |
KR100750192B1 (en) | 2006-05-04 | 2007-08-17 | 삼성전자주식회사 | Semiconductor chip having crack test circuit and method for testing of crack using the same |
US8159254B2 (en) * | 2008-02-13 | 2012-04-17 | Infineon Technolgies Ag | Crack sensors for semiconductor devices |
US7888776B2 (en) | 2008-06-30 | 2011-02-15 | Texas Instruments Incorporated | Capacitor-based method for determining and characterizing scribe seal integrity and integrity loss |
JP2013047697A (en) | 2009-12-21 | 2013-03-07 | Sharp Corp | Panel for display device and method for manufacturing the same |
JP2012243910A (en) | 2011-05-18 | 2012-12-10 | Elpida Memory Inc | Semiconductor device having structure for checking and testing crack in semiconductor chip |
US9159646B2 (en) * | 2012-12-13 | 2015-10-13 | Intel Corporation | Apparatus and method to monitor die edge defects |
US9343381B2 (en) | 2013-05-22 | 2016-05-17 | Infineon Technologies Ag | Semiconductor component with integrated crack sensor and method for detecting a crack in a semiconductor component |
US9070683B2 (en) * | 2013-06-20 | 2015-06-30 | Freescale Semiconductor, Inc. | Die fracture detection and humidity protection with double guard ring arrangement |
US9646897B2 (en) | 2013-10-28 | 2017-05-09 | Nxp Usa, Inc. | Die crack detector with integrated one-time programmable element |
JP2015232500A (en) | 2014-06-10 | 2015-12-24 | マイクロン テクノロジー, インク. | Semiconductor device |
KR20160108930A (en) * | 2015-03-09 | 2016-09-21 | 삼성전자주식회사 | chipping detection circuit of a semiconductor chip, semiconductor chip and method of operating the same |
CN107636815A (en) * | 2015-05-11 | 2018-01-26 | 罗伯特·博世有限公司 | Contact via chain as corrosion detector |
US9698066B2 (en) * | 2015-10-08 | 2017-07-04 | Samsung Electronics Co., Ltd. | Semiconductor chips having defect detecting circuits |
KR20170051085A (en) * | 2015-11-02 | 2017-05-11 | 삼성전자주식회사 | Embedded refresh controller and memory device including the same |
DE102016102291B4 (en) | 2016-02-10 | 2023-11-09 | Infineon Technologies Ag | SEMICONDUCTOR CHIP WITH BREAK DETECTION |
EP3327756B1 (en) * | 2016-11-24 | 2019-11-06 | Melexis Technologies NV | Die edge integrity monitoring system and corresponding method |
KR102385105B1 (en) * | 2018-02-27 | 2022-04-08 | 삼성전자주식회사 | Crack detection chip and crack detection method using the same |
KR102576394B1 (en) * | 2018-09-18 | 2023-09-08 | 삼성전자주식회사 | Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die |
KR20210029396A (en) * | 2019-09-06 | 2021-03-16 | 삼성전자주식회사 | Semiconductor device and nonvolatile memory device including crack detection structure |
-
2018
- 2018-09-18 KR KR1020180111542A patent/KR102576394B1/en active IP Right Grant
-
2019
- 2019-03-19 US US16/357,674 patent/US11062966B2/en active Active
- 2019-05-15 CN CN201910402840.3A patent/CN110911386B/en active Active
- 2019-09-02 SG SG10201908064UA patent/SG10201908064UA/en unknown
-
2021
- 2021-06-23 US US17/356,152 patent/US11600539B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20210320039A1 (en) | 2021-10-14 |
KR20200032470A (en) | 2020-03-26 |
KR102576394B1 (en) | 2023-09-08 |
US11600539B2 (en) | 2023-03-07 |
CN110911386B (en) | 2024-03-19 |
US20200091021A1 (en) | 2020-03-19 |
CN110911386A (en) | 2020-03-24 |
US11062966B2 (en) | 2021-07-13 |
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