SG10201908064UA - Defect Detection Structure Of A Semiconductor Die, Semiconductor Device Including The Same And Method Of Detecting Defects In Semiconductor Die - Google Patents

Defect Detection Structure Of A Semiconductor Die, Semiconductor Device Including The Same And Method Of Detecting Defects In Semiconductor Die

Info

Publication number
SG10201908064UA
SG10201908064UA SG10201908064UA SG10201908064UA SG10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA SG 10201908064U A SG10201908064U A SG 10201908064UA
Authority
SG
Singapore
Prior art keywords
semiconductor die
device including
same
defect detection
semiconductor
Prior art date
Application number
SG10201908064UA
Inventor
Lee Min-Jae
Kim Sang-Lok
Jeong Byung-Hoon
Lee Tae-Sung
Ihm Jeong-Don
Jeong Jae-Yong
Choi Young-Don
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG10201908064UA publication Critical patent/SG10201908064UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/3187Built-in tests
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG10201908064UA 2018-09-18 2019-09-02 Defect Detection Structure Of A Semiconductor Die, Semiconductor Device Including The Same And Method Of Detecting Defects In Semiconductor Die SG10201908064UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180111542A KR102576394B1 (en) 2018-09-18 2018-09-18 Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die

Publications (1)

Publication Number Publication Date
SG10201908064UA true SG10201908064UA (en) 2020-04-29

Family

ID=69773015

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201908064UA SG10201908064UA (en) 2018-09-18 2019-09-02 Defect Detection Structure Of A Semiconductor Die, Semiconductor Device Including The Same And Method Of Detecting Defects In Semiconductor Die

Country Status (4)

Country Link
US (2) US11062966B2 (en)
KR (1) KR102576394B1 (en)
CN (1) CN110911386B (en)
SG (1) SG10201908064UA (en)

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CN111678928B (en) * 2020-06-09 2021-03-30 长江存储科技有限责任公司 Method and apparatus for analyzing semiconductor structure
CN113936730B (en) 2020-07-13 2022-10-14 长鑫存储技术有限公司 Test method, test system and test equipment for semiconductor chip
KR20220014590A (en) 2020-07-29 2022-02-07 삼성전자주식회사 Semiconductor device including defect detection circuit and method of detecting defects in the same
US11804412B2 (en) 2021-01-22 2023-10-31 Changxin Memory Technologies, Inc. Circuit for detecting crack damage of a die, method for detecting crack, and memory
CN112908879B (en) * 2021-01-22 2022-06-03 长鑫存储技术有限公司 Bare chip crack damage detection circuit, crack detection method and memory
KR20220128718A (en) 2021-03-15 2022-09-22 에스케이하이닉스 주식회사 Semiconductor Device Having a Crack Detection Ring and a Crack Detection Structure
CN113269775B (en) * 2021-06-11 2022-10-28 河南理工大学 Defect detection method and device based on multi-scale feature fusion SSD
KR20230052752A (en) 2021-10-13 2023-04-20 에스케이하이닉스 주식회사 Semiconductor devices including crack sensor
KR20240064102A (en) * 2022-11-04 2024-05-13 삼성전자주식회사 Semiconductor device including detection structure

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US7888776B2 (en) 2008-06-30 2011-02-15 Texas Instruments Incorporated Capacitor-based method for determining and characterizing scribe seal integrity and integrity loss
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Also Published As

Publication number Publication date
US20210320039A1 (en) 2021-10-14
KR20200032470A (en) 2020-03-26
KR102576394B1 (en) 2023-09-08
US11600539B2 (en) 2023-03-07
CN110911386B (en) 2024-03-19
US20200091021A1 (en) 2020-03-19
CN110911386A (en) 2020-03-24
US11062966B2 (en) 2021-07-13

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