CN107636815A - Contact via chain as corrosion detector - Google Patents
Contact via chain as corrosion detector Download PDFInfo
- Publication number
- CN107636815A CN107636815A CN201680027765.1A CN201680027765A CN107636815A CN 107636815 A CN107636815 A CN 107636815A CN 201680027765 A CN201680027765 A CN 201680027765A CN 107636815 A CN107636815 A CN 107636815A
- Authority
- CN
- China
- Prior art keywords
- via chain
- contact via
- semiconductor element
- chain
- protection ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2644—Adaptations of individual semiconductor devices to facilitate the testing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- Geometry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The present invention relates to a kind of detector (100) for being used to determine faulty semiconductor element (101), it has：Semiconductor element (101), arrangement and the assay unit (104) for partly surrounding the contact via chain (102) of the semiconductor element (101), being transversely spaced the protection ring (103) of arrangement with the semiconductor element (101) and be arranged on the semiconductor element (101) are transversely spaced with the semiconductor element (101); characterized in that, the assay unit (104) is arranged to：Voltage, especially persistence voltage are applied to the contact via chain (102), the resistance value of the contact via chain (102) is detected, and output signal is produced when the resistance value of the contact via chain (102) exceedes threshold value.
Description
Technical field
The present invention relates to a kind of detector for being used to determine defective semiconductor element and it is a kind of be used for detection have it is scarce
The method of sunken semiconductor element.In other words, the present invention relates to a kind of as corrosion and the contact via chain of crack detector
(Kontaktviakette)。
Background technology
Semiconductor element is separated on chip by kerf during fabrication, and the kerf is in the follow-up assembling for being used to separate
Utilized in technique by sawing or other method.These semiconductor elements relative to sawing groove by protection ring, i.e. so-called stroke
Linear sealing (Scribeseal) is protected.The task of protection ring is to prevent by crackle caused by wafer cutting and prevent external point
Son is diffused into circuit.The use of protection ring is prior art.
In addition various different schemes be present to monitor the function of protection ring.Described in the B1 of document US 6,833,720
As the contact via chain of probe unit, the special inspection of contact via chain damage caused by due to water infiltration.In addition, document
US6,833,720B1 is confined to use low-k materials as dielectric element.
Describe a kind of contact via chain in document DE102012105848A1 and US20130009663A1, but its
It can only be evaluated in wafer sort with predetermined arrangement on measurement pad by initial analysis.
Document US2009/0321734A1 describes a kind of whole total system, and its unique function is the control of protection ring.It is logical
The assay to capacitance signal is crossed to be analyzed and evaluated.
The content of the invention
It is described to be used to determine that the detector of faulty semiconductor element includes：Semiconductor element and the semiconductor element
The contact via chain of the spaced arrangement of part, the also protection ring and arrangement with the spaced arrangement of the semiconductor element
Assay unit on the semiconductor element.According to the present invention, the assay unit is arranged to：Touched to described
Point via chain applies voltage, detects the resistance value of the contact via chain, and when the resistance value of the contact via chain exceedes
Output signal is produced during threshold value.The voltage is applied in the contact via chain particularly lastingly.
It is in this advantage, carries out the detection of defective component early, because the voltage accelerated corrosion process applied.Separately
One advantage is that assay is not by capacitance measurement but completed by resistance measurement, this obvious easily integration.
In expansion scheme, protection ring is disposed in outside the via chain of contact.
Herein it is advantageously possible to know the risk of protection ring damage.
In another arrangement, protection ring is arranged between semiconductor element and contact via chain.
Included according to the method for being used to detect defective semiconductor element of the present invention：Apply electricity to contact via chain
Pressure, detects the resistance value of the contact via chain, and produce output signal when the resistance value of contact via chain exceedes threshold value.
This, the voltage is particularly for good and all permanently applied in the via chain of contact in other words.
It is that protection ring can be monitored initially and in operation in this advantage.In other words, faulty semiconductor device
The determination of part is carried out and changeably can be analyzed and evaluated in different time points early, or is entered when final products are tested
Row or at work progress in situ.It is also advantageous that increased protection ring failure risk can be detected.Additionally can be with
Mechanical damage and the corrosion as caused by the water invaded or other foreign matters are detected by changing resistance.Permanent application voltage is effective
Accelerate these corrosion.Thus, this arrangement metal such as aluminium relatively low for otherwise sensitiveness but being commonly used also works.
Other advantages are learnt from the description to embodiment below or dependent claims.
Brief description of the drawings
The present invention is explained referring to preferred embodiments and drawings.Accompanying drawing is shown：
The cross section of the primary element of the complete contact via chains of Fig. 1,
The functional-block diagram of contact via chain in Fig. 2 protection rings,
The functional-block diagram of contact via chain outside Fig. 3 protection rings,
Fig. 4 partly surrounds the functional-block diagram of the contact via chain of semiconductor element,
The functional-block diagram of the contact via chain of Fig. 5 segmenteds or local arrangement, and
Fig. 6 is used for the method for detecting defective semiconductor element.
Embodiment
Fig. 1 shows the cross section 100 of the primary element 110 of complete contact via chain.Primary element 110 in other words should
It is mutual with the combination of trap resistance 118 that structure includes contact 111, via 112,113 and 114 and metallic section 115,116 and 117
Even.In a configuration, conductive path at the contact be directed into the metal of bottom the first metallic section in other words
115, the metal being positioned above the second metallic section 116 in other words is then directed into via via 112, similarly until quilt
It is directed to uppermost metal final metal level in other words, such as top-level metallic (Top Metall).Contact via chain it is basic
Element 110 is then from top-level metallic in other words from final metal level via via 114,113 and 112 and positioned between them
Metal 117,116 and 115 returns to contact aspect.Conductive diffusion trap is connected through to realize between two contacts, the conduction
Diffusion trap insulate relative to substrate 119, such as the n dopant wells in p doped substrates, or on the contrary.In this case, it is adjacent
Substrate portions must also be electrically insulated from each other trap in other words, such as by using field oxide or isolation channel 120.Show in Fig. 1
Use the semiconductor technology with four metal levels to example property.But it can also use with more or less metal levels
Semiconductor technology.
For each independent metal, for example, can use aluminium, gold, copper or other metals and metal series of strata such as copper-nickel-
Palladium, and alloy such as AlCu can be used.For via and contact, tungsten, copper or other metals and alloy can be used.
This, each metal level can be made up of different metals and have different thickness degree.Generally, the such structure of these metals
Make：So that they are overlapping with contact 111 and the formation of via 112,113 and 114.This is overlapped between metal level 115,116 and 117
It can change.
When chain is only partially built, such as exist only between the first metallic section 115 and the second metallic section 116 or only
Between 3rd metallic section 117 and top-level metallic 121, then other implementation structures are obtained.
The described primary element 110 of contact via chain can be by the way that multiple primary element arranged in succession be extended to
One contact via chain with resistance.Depending on length and implementation structure, resistance is change.Contact via chain is by dielectric
Material 122 surrounds to be embedded in dielectric material 122 in other words.
Fig. 2 shows the functional-block diagram 200 of the contact via chain 202 in protection ring 203.In other words, contact via
Chain 202 is used in the active area of integrated circuit in other words between semiconductor element 201 and protection ring 203.Contact via chain 202 is enclosed
Around active region 201.The end of contact via chain 202 is connected with assay unit 204.By assay unit 204, touch
Point via chain 202 be connected in the case of the n dopant wells being used in p doped substrates with relative to the positive voltage of substrate or
It is connected in the case of the p dopant wells being used in n doped substrates with relative to the negative voltage of substrate.It can for example use and supply for this
Piezoelectric voltage Vdd.
In addition, assay unit 204 by the resistance of the chain compared with reference value or threshold value.The reference value corresponds to
Initial wafer test when contact via chain resistance and be stored in component.It can additionally be come using other assay mechanism
Detection detection damage, such as two same type contact via chain fragments are relatively.The arrangement is not limited to low-k materials.
Some mechanism for causing resistance variations and can be by assay unit 204 to detect are listed below.By
Sawing causes and breaking through the mechanical crackle of protection ring is broken chain.This can initially be completed in sawing or at work due to
Crack Extension and complete.
, may be in semiconductor due to encapsulation stress (such as due to molding material) during encapsulation process or at work
The rearward end of material, especially cracked in the fringe region of semiconductor element or layering.These cause the mechanical breaking of chain.
Due to technological problemses, when manufacturing semiconductor wafer, the damage at interface may occur in semi-conducting material rearward end
Bad or pollution, this may cause the layering particularly in the fringe region of semiconductor element, and thereby cause the machinery of chain to break
Split.
It is caused from semiconductor element if one of above-mentioned mechanical breakdown only results in form crackle without causing chain to be broken
Part edge may cause foreign matter inwardly to spread to the gap of contact via chain.This may include all classes used in encapsulation process
Type chemicals, such as water, sawing additive, cleaning agent and the pollutant from encapsulating material, such as chip attachment glue or mould
Mould material.These foreign matters can cause corrosion or migration in the metal series of strata of semiconductor element.The presence of electric charge or voltage promotes
This infringement.Because contact via chain relative to substrate is enduringly in positive potential or negative potential, so effectively accelerating chain
The corrosion of the middle metal used such as aluminium, tungsten, copper.The corrosion of contact via chain causes the resistance variations of chain, and the resistance variations can
Detected before impurity or damage continue to invade in active region by assay unit.
Fig. 3 shows the functional-block diagram 300 of the contact via chain 302 outside protection ring 303, wherein, analysis is commented
Valency unit 304 is disposed on semiconductor element 301.If in the external detection of protection ring 303 to damage, this represents protection ring
The risk of 303 damages improves.As embodiment, the structure can only use outside protection ring 303 or in protection ring both sides.
Fig. 4 shows the functional-block diagram 400 and guarantor partially around the contact via chain 402 of semiconductor element 401
Retaining ring 403 and assay unit 404.In other words, contact via chain 402 is used in the one side or the multi-lateral of integrated circuit.
This allows detection being restricted on one or more directions.
Fig. 5 show segmented in other words region-type arrangement contact via chain 502 functional-block diagram 500 and protection ring
503rd, assay unit 504 and four circuit modules 506,507,508 and 509 are illustrated.This means the structure
It may be constructed such each single split.This allows the detection directionally resolved in other words of spatial discrimination.Thus, to detecting
The reaction of damage can differently occur depending on adjacent circuit module.
Fig. 6 shows the method 600 for detecting defective semiconductor element.Method 600 since step 610,
Voltage is applied in the via chain of contact in the step.In following step 620, the resistance value of contact via chain is detected.
In following step 640, output signal is produced according to the resistance value, specifically when resistance value refers in other words more than threshold value
During value.It is alternatively possible to by the electricity of contact via chain in the step 630 performed in time between step 620 and step 640
Resistance storage is deposited in the semiconductor element in memory in other words or assay unit in other words.
Method 600 can perform at different time points.During initial On-Wafer Measurement, it is also used for checking the function of the structure
And storing initial value is as reference.After packaging process in final test step, for checking the influence of packaging process.
Each startup program at the scene and the application for being related to security also for good and all original place performs at the scene.
Claims (4)
1. the detector (100) for determining faulty semiconductor element (101), has：Semiconductor element (101) and institute
Semiconductor element (101) is stated to be transversely spaced to arrange and partly surround the contact via chain of the semiconductor element (101)
(102) protection ring (103) of arrangement, is transversely spaced with the semiconductor element (101) and is arranged in the semiconductor
Assay unit (104) on element (101), it is characterised in that the assay unit (104) is arranged to：To institute
State contact via chain (102) and apply voltage, especially persistence voltage, detect the resistance value of the contact via chain (102), and
And produce output signal when the resistance value of the contact via chain (102) exceedes threshold value.
2. detector (100) according to claim 1, its feature are placed in, the protection ring (103) is arranged in the contact
Outside via chain (102).
3. detector (100) according to claim 1, its feature are placed in, the protection ring (103), which is arranged in, described partly leads
Between volume elements part (101) and the contact via chain (102).
4. the method (600) for detecting defective semiconductor element, has steps of：
Apply (610) voltage to contact via chain,
The resistance value of (620) the contact via chain is detected,
(640) output signal is produced when the resistance value of contact via chain exceedes threshold value.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015107328.5 | 2015-05-11 | ||
| DE102015107328 | 2015-05-11 | ||
| PCT/EP2016/060286 WO2016180756A1 (en) | 2015-05-11 | 2016-05-09 | Contact-via-chain as corrosion detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107636815A true CN107636815A (en) | 2018-01-26 |
Family
ID=55948838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680027765.1A Pending CN107636815A (en) | 2015-05-11 | 2016-05-09 | Contact via chain as corrosion detector |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10431507B2 (en) |
| EP (1) | EP3295476A1 (en) |
| CN (1) | CN107636815A (en) |
| TW (1) | TW201709373A (en) |
| WO (1) | WO2016180756A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911386A (en) * | 2018-09-18 | 2020-03-24 | 三星电子株式会社 | Defect detection structure of semiconductor bare chip, semiconductor device and defect detection method |
| WO2021190385A1 (en) * | 2020-03-25 | 2021-09-30 | 长鑫存储技术有限公司 | Semiconductor structure |
| WO2023184683A1 (en) * | 2022-03-31 | 2023-10-05 | 长鑫存储技术有限公司 | Damage detection structure and semiconductor device |
| US11804412B2 (en) | 2021-01-22 | 2023-10-31 | Changxin Memory Technologies, Inc. | Circuit for detecting crack damage of a die, method for detecting crack, and memory |
Families Citing this family (6)
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| EP3425664A1 (en) * | 2017-07-07 | 2019-01-09 | Nxp B.V. | Integrated circuit with a seal ring |
| US20190250208A1 (en) * | 2018-02-09 | 2019-08-15 | Qualcomm Incorporated | Apparatus and method for detecting damage to an integrated circuit |
| EP3757585A1 (en) * | 2019-06-28 | 2020-12-30 | NXP USA, Inc. | An apparatus comprising a defect sensor structure |
| KR20210029396A (en) * | 2019-09-06 | 2021-03-16 | 삼성전자주식회사 | Semiconductor device and nonvolatile memory device including crack detection structure |
| JP2021044477A (en) | 2019-09-13 | 2021-03-18 | キオクシア株式会社 | Semiconductor storage device |
| US11105846B1 (en) * | 2020-04-02 | 2021-08-31 | Globalfoundries U.S. Inc. | Crack detecting and monitoring system for an integrated circuit |
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2016
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911386A (en) * | 2018-09-18 | 2020-03-24 | 三星电子株式会社 | Defect detection structure of semiconductor bare chip, semiconductor device and defect detection method |
| CN110911386B (en) * | 2018-09-18 | 2024-03-19 | 三星电子株式会社 | Defect detection structure of semiconductor bare chip, semiconductor device and defect detection method |
| WO2021190385A1 (en) * | 2020-03-25 | 2021-09-30 | 长鑫存储技术有限公司 | Semiconductor structure |
| US11804412B2 (en) | 2021-01-22 | 2023-10-31 | Changxin Memory Technologies, Inc. | Circuit for detecting crack damage of a die, method for detecting crack, and memory |
| WO2023184683A1 (en) * | 2022-03-31 | 2023-10-05 | 长鑫存储技术有限公司 | Damage detection structure and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US10431507B2 (en) | 2019-10-01 |
| EP3295476A1 (en) | 2018-03-21 |
| US20180138098A1 (en) | 2018-05-17 |
| TW201709373A (en) | 2017-03-01 |
| WO2016180756A1 (en) | 2016-11-17 |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180126 |
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