SG10201903148WA - Repeater detection - Google Patents

Repeater detection

Info

Publication number
SG10201903148WA
SG10201903148WA SG10201903148WA SG10201903148WA SG10201903148WA SG 10201903148W A SG10201903148W A SG 10201903148WA SG 10201903148W A SG10201903148W A SG 10201903148WA SG 10201903148W A SG10201903148W A SG 10201903148WA SG 10201903148W A SG10201903148W A SG 10201903148WA
Authority
SG
Singapore
Prior art keywords
wafer
image
cell
scanning
die
Prior art date
Application number
SG10201903148WA
Inventor
Hong Chen
Kenong Wu
Eugene Shifrin
Masatoshi Yamaoka
Gangadharan Sivaraman
Raghav Babulnath
Satya Kurada
Alfonso Sun
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG10201903148WA publication Critical patent/SG10201903148WA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning

Abstract

REPEATER DETECTION Systems and methods for detecting defects on a wafer are provided. One method includes generating test image(s) for at least a portion of an array region in die(s) on a wafer from frame image(s) generated by scanning the wafer with an inspection system. The method also includes generating a reference image for cell(s) in the an - ay region from frame images generated by the scanning of the wafer. In addition, the method includes determining difference image(s) for at least one cell in the at least the portion of the array region in the die(s) by subtracting the reference image from portion(s) of the test image(s) corresponding to the at least one cell. The method further includes detecting defects on the wafer in the at least one cell based on the difference image(s). (Figure ) 38
SG10201903148WA 2014-08-27 2015-08-27 Repeater detection SG10201903148WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462042251P 2014-08-27 2014-08-27
US14/674,856 US9766186B2 (en) 2014-08-27 2015-03-31 Array mode repeater detection

Publications (1)

Publication Number Publication Date
SG10201903148WA true SG10201903148WA (en) 2019-05-30

Family

ID=55400561

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201903148WA SG10201903148WA (en) 2014-08-27 2015-08-27 Repeater detection
SG11201700784QA SG11201700784QA (en) 2014-08-27 2015-08-27 Repeater detection

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201700784QA SG11201700784QA (en) 2014-08-27 2015-08-27 Repeater detection

Country Status (6)

Country Link
US (1) US9766186B2 (en)
KR (1) KR102435627B1 (en)
CN (1) CN106662538B (en)
SG (2) SG10201903148WA (en)
TW (1) TWI648706B (en)
WO (1) WO2016033300A1 (en)

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Also Published As

Publication number Publication date
TWI648706B (en) 2019-01-21
KR20170045272A (en) 2017-04-26
WO2016033300A1 (en) 2016-03-03
CN106662538B (en) 2020-03-27
US20160061749A1 (en) 2016-03-03
SG11201700784QA (en) 2017-03-30
TW201614586A (en) 2016-04-16
US9766186B2 (en) 2017-09-19
KR102435627B1 (en) 2022-08-23
CN106662538A (en) 2017-05-10

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