TWI751329B - High accuracy of relative defect locations for repeater analysis - Google Patents

Abstract

Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

Description

High accuracy of relative defect location for repetitive defect analysis

The present invention generally relates to methods and systems for determining relative defect locations with relatively high accuracy for repeater analysis.

The following description and examples are not to be considered prior art by virtue of their inclusion in this section. Fabricating semiconductor devices, such as logic and memory devices, typically involves processing a substrate, such as a semiconductor wafer, using a number of semiconductor fabrication processes to form various features and levels of the semiconductor device. For example, lithography involves a semiconductor fabrication process that transfers a pattern from a reticle to a photoresist disposed on a semiconductor wafer. Additional examples of semiconductor fabrication processes include, but are not limited to, chemical mechanical polishing (CMP), etching, deposition, and ion implantation. Multiple semiconductor devices can be fabricated in an arrangement on a single semiconductor wafer and then separated, etc. into individual semiconductor devices. Various steps during a semiconductor process use inspection procedures to detect defects on wafers to facilitate higher yields and thus higher profits in the process. Inspection has always been an important part of making semiconductor devices such as ICs. However, as the size of semiconductor devices decreases, inspection becomes even more important for the successful manufacture of acceptable semiconductor devices because smaller defects can cause the devices to fail. Some current inspection methods detect repeater defects on the wafer to thereby detect defects on the reticle. For example, a reticle is repeatedly printed in different areas on a wafer to thereby generate multiple instances of the reticle printed on the wafer. Thus, if a defect is repeatedly detected at multiple locations on a wafer corresponding to the same location on a reticle ("a repeating defect"), the defect may be caused by the reticle itself. Thus, repeating defects can be analyzed to determine whether they are caused by reticle defects and not some other cause. A single die reticle is generally defined as a reticle consisting of only one die. A multi-die photomask is a photomask composed of a plurality of dies. Generally, repetitive defect detection (RDD) is performed as a post-wafer processing (PP) operation. For example, inspection tools can perform normal die-to-die defect detection (DD), and after reporting all wafer defects, RDD can be performed in a post-processing step while scanning the wafer rather than in a different computer component . Duplicate defects are defined as defects located at the same relative reticle location (within a specified tolerance) in several instances of the reticle printed on the wafer. In some currently used repetitive defect detection methods and systems, such as those performed for a multi-die reticle that has been printed on a wafer, defects are detected strip-by-strip and reported relative to the die or reticle. defect location. These methods and systems produce good defect locations within each swath because pre-mapping and run-time alignment (RTA) align dies in the same swath or reticle row. However, there is no mechanism for aligning reticle instances between swaths across a reticle row. Repeated defect locations between swaths on different reticle instances can be twice as large as swath position accuracy, eg, about 300 nm or about 10 pixels. Ideally, the repeating defect tolerance should be set equal to or greater than 300 nm to find all repeating defect instances. A relatively large repeating defect tolerance causes more random defects to be detected as repeating defects. Accordingly, it would be advantageous to develop systems and/or methods for determining relative defect locations with relatively high accuracy for repetitive defect analysis that do not have one or more of the disadvantages described above.

The following description of various embodiments should not be construed in any way as limiting the scope of the appended claims. One embodiment relates to a system configured to change the position of detected defects on a wafer. The system includes a detection subsystem including at least one energy source and a detector. The energy source is configured to generate energy directed to a wafer. The detector is configured to detect energy from the wafer and generate an output in response to the detected energy. The output includes scan strips of a frame of output for each of the dies on the wafer, and each of the instances of a reticle printed on the wafer includes the dies at least two instances of the grain. The system also includes one or more computer subsystems configured to detect defects on the wafer by applying a defect detection method to the output generated by the detector. For single-die photomasks, repeating defects cannot be detected by any method that uses die-to-die comparisons because repeating defect signals are cancelled out by such comparisons. A different method can be used for defect detection of single-die masks. This is not the subject of the embodiments described herein. For multi-die photomasks, repeating defects do not appear in immediately adjacent dies, so a die-to-die comparison can be used. The location of the defects is reported by the defect detection method in scanning tape coordinates. The one or more computer subsystems are also configured to align the first one of the plurality of dies in the first one of the plurality of instances of the reticle printed on the wafer. Output of a first of the frames of the first of the plurality of scan strips and the dies in the other of the instances of the reticle printed on the wafer which corresponds to the output of the frames corresponding to the other of the plurality of scanbands of the other. In addition, the one or more computer subsystems are configured to be based on the swept coordinates of the output of the frames and the output of the first of the frames to which it was aligned in the aligning step The differences between the swept coordinates respectively determine different swept coordinate offsets of each of the frames in the other of the plurality of instances of the reticle. The one or more computer subsystems are further configured to apply one of the different swath coordinate offsets to the swath coordinates for the defect reports detected on the wafer, wherein based on wherein the other ones of the instances of the reticle in which the defects are detected determine which of the different swath coordinate offsets apply to the swath coordinates reported for the defects, thereby transforming the scanband coordinates for the defect reports from the scanband coordinates of the other of the instances of the reticle to the first of the instances of the reticle The scanband coordinates in . The system can be further configured as described herein. Another embodiment relates to a computer-implemented method for transforming the location of detected defects on a wafer. The method includes steps for each of the functions of one or more of the computer subsystems described above. The steps of the method are performed by one or more computer subsystems coupled to a detection subsystem configured as described above. The method can be performed as further described herein. Additionally, the method may comprise any other step(s) of any other method(s) described herein. Furthermore, the method can be performed by any of the systems described herein. An additional embodiment relates to a non-transitory computer-readable medium storing program instructions executable on a computer system to perform a computer-implemented method for transforming the location of defects detected on a wafer. The computer-implemented method includes the steps of the method described above. The computer-readable medium can be further configured as described herein. The steps of the computer-implemented method can be performed as further described herein. Additionally, the computer-implemented method for which the program instructions may be executed may include any other step(s) of any other method(s) described herein.

Referring now to the diagram, It should be noted that Figures are not drawn to scale. Specifically, The scale of some elements in the figures is greatly exaggerated to emphasize the characteristics of the elements. It should also be noted that Figures are not drawn to the same scale. Similar reference numerals have been used to designate similarly configurable elements shown in more than one figure. Unless otherwise stated herein, Any elements otherwise described and shown may comprise any suitable commercially available elements. One embodiment relates to a system configured to transform the location of detected defects on a wafer. Embodiments described herein are particularly suitable for detecting repeating defects on a wafer caused by a multi-die reticle printed on the wafer. For multi-die masks, Die and reticle coordinate transformations are known and fixed for all die families. If the location of a defective die is determined, Then its mask position can be calculated. Generally speaking, Embodiments described herein are configured to determine precise (or substantially precise) relative defect locations for repetitive defect analysis. More specifically, Embodiments described herein generally transform defect locations from all reticle instances printed on a wafer to common coordinates during inspection and significantly increase relative defect location accuracy. Embodiments described herein may help reduce false duplicate defect counts for duplicate defect analysis. The multi-die photomask can be any multi-die photomask known in the art. Wafers can include any wafers known in the art. One embodiment of such a system is shown in FIG. 1 . The system includes a detection subsystem, The detection subsystem includes at least one energy source and a detector. The energy source is configured to generate energy directed to a wafer. The detector is configured to detect energy from the wafer and generate an output in response to the detected energy. In one embodiment, The energy directed to the wafer contains light, And the energy detected from the wafer includes light. For example, In the embodiment of the system shown in Figure 1, Detection subsystem 10 includes an illumination subsystem configured to direct light to wafer 14 . The lighting subsystem includes at least one light source. For example, As shown in Figure 1, The lighting subsystem includes light sources 16 . In one embodiment, The illumination subsystem is configured to direct light to the wafer at one or more angles of incidence, which may include one or more tilt angles and/or one or more normal angles. For example, As shown in Figure 1, Light from light source 16 is directed through optical element 18 and then lens 20 to beam splitter 21, The beam splitter 21 directs the light to the wafer 14 at a normal incidence angle. The angle of incidence can include any suitable angle of incidence, It may vary depending on, for example, the characteristics of the wafer and the defects to be detected on the wafer. The illumination subsystem can be configured to direct light to the wafer at different times and at different angles of incidence. For example, The detection subsystem may be configured to alter one or more characteristics of one or more elements of the lighting subsystem, This enables light to be directed to the wafer at an angle of incidence different from that shown in FIG. 1 . In one such instance, The detection subsystem can be configured so that the light sources 16, Optical element 18 and lens 20 move, The light is directed to the wafer at a different angle of incidence. In some instances, The detection subsystem can be configured to direct light to the wafer at more than one angle of incidence at the same time. For example, The lighting subsystem may contain more than one lighting channel, One of the illumination channels may include a light source 16 as shown in FIG. 1 , Optical element 18 and lens 20, and another of the lighting channels (not shown) may include similar elements that may be of different or identical configurations, Or may include at least one light source and possibly one or more other components such as those described further herein. If this light is directed to the wafer at the same time as another light, then one or more properties of the light directed to the wafer at different angles of incidence (eg, wavelength, polarized light, etc.) can be different, The light generated by illuminating the wafer at different angles of incidence is made distinguishable from each other at the detector(s). In another instance, The lighting subsystem may contain only one light source (eg, source 16) shown in Figure 1, And the light from the light source can be separated into different optical paths by one or more optical elements (not shown) of the illumination subsystem (eg, Based on wavelength, polarized light, etc.). then, Light in each of the different optical paths can be directed to the wafer. Multiple illumination channels can be configured to direct light to the wafer simultaneously or at different times (eg, when using different illumination channels to sequentially illuminate the wafer). In another instance, The same illumination channel can be configured to direct light to the wafer with different characteristics at different times. For example, In some instances, Optical element 18 can be configured as a spectral filter, And the properties of the spectral filter can be in many different ways (eg, By replacing the spectral filter) changes allow different wavelengths of light to be directed to the wafer at different times. The illumination subsystem may have any other suitable configuration known in the art for directing light with different or the same characteristics to the wafer sequentially or simultaneously at different or the same angle of incidence. In one embodiment, Light source 16 may comprise a broadband plasma (BBP) light source. In this way, The light generated by the light source and directed to the wafer may comprise broadband light. However, The light source may comprise any other suitable light source, such as a laser. The laser may comprise any suitable laser known in the art, and can be configured to generate light at any suitable wavelength or wavelengths known in the art. in addition, Lasers can be configured to produce monochromatic or near-monochromatic light. In this way, The laser may be a narrowband laser. The light source may also include a polychromatic light source that produces light at a plurality of discrete wavelengths or wavelength bands. Light from optical element 18 can be focused by lens 20 to beam splitter 21 . Although lens 20 is shown in FIG. 1 as a single refractive optical element, should understand, In practice, Lens 20 may include several refractive and/or reflective optical elements in combination to focus light from the optical elements onto the wafer. The illumination subsystem shown in FIG. 1 and described herein may include any other suitable optical elements (not shown). Examples of such optical elements include, but are not limited to, polarizing element(s), (several) spectral filters, (several) spatial filters, (several) reflective optics, (several) apodizers, (several) beam splitters, (certain) voids and the like, It may comprise any such suitable optical elements known in the art. in addition, The system can be configured to alter one or more of the elements of the lighting subsystem based on the type of lighting to be used for detection. The inspection subsystem may also include a scanning subsystem configured to cause the light to scan over the wafer. For example, The inspection subsystem may include a stage 22 on which wafers 14 are placed during inspection. The scanning subsystem can include any suitable mechanical and/or robotic assembly (including stage 22) that can be configured to move the wafer so that light can be scanned over the wafer. Additionally or alternatively, The detection subsystem can be configured such that one or more optical elements of the detection subsystem perform some scan of the light over the wafer. The light can be scanned over the wafer in any suitable manner. The detection subsystem further includes one or more detection channels. At least one of the one or more detection channels includes a detector, The detector is configured to detect light from the wafer due to illumination of the wafer by the detection subsystem and to generate an output in response to the detected light. For example, The detection subsystem shown in Figure 1 consists of two detection channels, A detection channel consists of the collector 24, Element 26 and detector 28 are formed, And another detection channel is composed of the light collector 30, Element 32 and detector 34 are formed. As shown in Figure 1, The two detection channels are configured to collect and detect light at different collection angles. In some instances, A detection channel is configured to detect specular light, and the other detection channel is configured to detect reflections that are not mirrored from the wafer (eg, scattering, Diffraction, etc.) light. However, Two or more of the detection channels can be configured to detect the same type of light from the wafer (eg, specular light). Although FIG. 1 shows one embodiment of a detection subsystem including two detection channels, However, the detection subsystem may include different numbers of detection channels (eg, only one detection channel or two or more detection channels). Although each of the light collectors is shown in FIG. 1 as a single refractive optical element, should understand, Each of the light collectors may include one or more refractive optical elements and/or one or more reflective optical elements. The one or more detection channels may comprise any suitable detector known in the art. For example, The detector may include a photomultiplier tube (PMT), Charge-coupled device (CCD) and time-lapse integration (TDI) cameras. The detector may also include any other suitable detector known in the art. Detectors may also include non-imaging detectors or imaging detectors. In this way, If the detector is a non-imaging detector, Each of the detectors can then be configured to detect certain characteristics of scattered light, such as intensity, However, it may not be configured to detect these characteristics that vary depending on the positioning within the imaging plane. thus, The output generated by each of the detectors included in each of the detection channels of the detection subsystem may be a signal or data rather than an image signal or image data. In such instances, A computer subsystem, such as the computer subsystem 36 of the system, can be configured to generate an image of the wafer from the non-imaging output of the detector. However, In other instances, The detector may be configured as an imaging detector configured to generate imaging signals or image data. therefore, The system can be configured to produce the output described herein in several ways. It should be noted that Figure 1 is provided herein to generally illustrate one configuration of a detection subsystem that may be included in system embodiments described herein. Obviously, The detection subsystem configuration described herein can be changed to optimize the performance of the system as is typically performed when designing a commercial detection system. in addition, Existing detection systems such as one of the 29xx/39xx and Puma 9xxx series tools commercially available from KLA-Tencor can be used (eg, The systems described herein are implemented by adding the functionality described herein to an existing detection system). For some of these systems, The methods described herein may provide optional functionality for the system (eg, in addition to other functionality of the system). or, The system described in this article can be designed "from scratch" to provide an entirely new system. The computer subsystem 36 of the system may be implemented in any suitable manner (eg, via one or more transmission media, It may include "wired" and/or "wireless" transmission media) coupled to the detectors of the detection subsystem, Enables the computer subsystem to receive the output generated by the detector during scanning of the wafer. Computer subsystem 36 may be configured to use the output of the detector to perform several functions as described herein and any other functions further described herein. This computer subsystem can be further configured as described herein. This computer subsystem (and other computer subsystems described herein) may also be referred to herein as computer system(s). Each of the computer subsystem(s) or systems described herein may take various forms, including a personal computer system, video computer, Embedded Systems, host computer system, workstation, network equipment, Internet equipment or other devices. Generally speaking, The term "computer system" may be broadly defined to encompass any device having one or more processors that execute instructions from a memory medium. (Several) computer subsystems or systems may also include any suitable processor known in the art, such as CPU and GPU. in addition, (several) computer subsystems or systems may comprise a computer platform with high-speed processing and software, It works as a standalone tool or as a network tool. If the system contains more than one computer subsystem, The different computer subsystems can then be coupled to each other such that images, material, Information, instructions etc. For example, Computer subsystem 36 may be coupled to computer subsystem(s) 102 (as shown by the dashed lines in FIG. 1 ) by any suitable transmission medium, which may include any suitable wired and/or wireless transmission medium known in the art. Two or more of these computer subsystems may also be operatively coupled by a common computer-readable storage medium (not shown). Although the detection subsystem is described above as an optical or light-based detection subsystem, However, the detection subsystem may be an electron beam based detection subsystem. For example, In one embodiment, The energy directed to the wafer contains electrons, And the energy detected from the wafer includes electrons. In this way, The energy source may be an electron beam source. In one such embodiment shown in Figure 2, The detection subsystem includes an electron column 122 coupled to a computer subsystem 124 . Also shown in Figure 2, The electron column includes an electron beam source 126 configured to generate electrons focused by one or more elements 130 onto wafer 128 . The electron beam source may comprise, for example, a cathode source or emitter tip, And one or more elements 130 may include, for example, a shot lens, an anode, A beam confines the aperture, a gate valve, A beam current selects the aperture, an objective lens and a scanning subsystem, All of them may include any such suitable elements known in the art. Electrons returning from the wafer (e.g., Secondary electrons) can be focused to detector 134 by one or more elements 132 . One or more elements 132 may include, for example, a scanning subsystem, It may be the same scanning subsystem included in element(s) 130 . The electron column may comprise any other suitable element known in the art. in addition, The electron column can be further configured as described in: U.S. Patent No. 8 issued to Jiang et al. on April 4, 2014, 664, No. 594, U.S. Patent No. 8, issued to Kojima et al. on April 8, 2014, 692, No. 204, U.S. Patent No. 8, issued to Gubbens et al. on April 15, 2014, 698, 093, and U.S. Patent No. 8 issued to MacDonald et al. on May 6, 2014, 716, 662, These cases are incorporated herein by reference as if set forth in their entirety. Although the electron columns are shown in FIG. 2 as being configured such that electrons are directed to the wafer at one oblique angle of incidence and scattered from the wafer at another oblique angle, should understand, The electron beam can be directed to and scattered from the wafer at any suitable angle. in addition, Electron beam-based subsystems can be configured to produce images of wafers using a variety of modalities (eg, Use different lighting angles, collection angle, etc.). The various modes of electron beam-based subsystems may differ in any image generation parameters of the subsystem. Computer subsystem 124 may be coupled to detector 134 as described above. The detector detects electrons returning from the surface of the wafer, Thereby, an electron beam image of the wafer is formed. The electron beam image may comprise any suitable electron beam image. Computer subsystem 124 may be configured to perform any of the functions described herein using the output of the detector and/or the electron beam image. Computer subsystem 124 may be configured to perform any additional step(s) described herein. A system including one of the detection subsystems shown in Figure 2 can be further configured as described herein. It should be noted that Figure 2 is provided herein to generally illustrate one configuration of an electron beam-based detection subsystem that may be included in embodiments described herein. Like the optical detection subsystem described above, The electron beam-based detection subsystem configuration described herein can be altered to optimize the performance of the detection subsystem as is typically performed when designing a commercial detection system. in addition, Existing detection systems such as one of the eSxxx series of tools commercially available from KLA-Tencor can be used (eg, The systems described herein are implemented by adding the functionality described herein to an existing detection system). For some of these systems, The methods described herein may provide optional functionality for the system (eg, in addition to other functionality of the system). or, The system described in this article can be designed "from scratch" to provide an entirely new system. Although the detection subsystem is described above as a light-based or electron beam-based detection subsystem, However, the detection subsystem may be an ion beam based detection subsystem. Such a detection subsystem can be configured as shown in Figure 2, Except that the electron beam source can be replaced by any suitable ion beam source known in the art. in addition, The detection subsystem can be any other suitable ion beam based subsystem, such as those included in commercially available Focused Ion Beam (FIB) systems, Subsystems in helium ion microscopy (HIM) systems and secondary ion mass spectrometer (SIMS) systems. As mentioned above, Optical and electron beam detection subsystems can be configured to transfer energy (eg, Light, electrons) directed to a physical version of the wafer and/or scanned with energy over a physical version of the wafer, Thereby generating the actual (ie, non-analog) output and/or image. In this way, Optical and electron beam inspection subsystems can be configured as "real" tools rather than "virtual" tools. However, The computer subsystem(s) 102 shown in FIG. 1 may include computer subsystem(s) 102 configured to perform one or more functions using at least some actual optical images and/or actual electron beam images generated for the wafer, which may include those described further herein. one or more "virtual" systems (not shown) for any of one or more functions). One or more virtual systems cannot place wafers in them. Specifically, The virtual system(s) are not part of the optical inspection subsystem 10 or the e-beam inspection subsystem 122 and do not have any ability to handle physical versions of the wafers. In other words, In one of the systems configured as a virtual system, The output of one or more of its "detectors" may be outputs previously generated by one or more detectors of an actual detection subsystem and stored in the virtual system, and during Imaging and/or Scanning, The virtual system can replay the stored output as if the wafer was being imaged and/or scanned. In this way, Imaging and/or scanning a wafer with a virtual system may appear to be imaging and/or scanning a physical wafer with an actual system, And in fact, "Imaging and/or scanning" involves simply replaying the output of a wafer in the same way that a wafer can be imaged and/or scanned. Systems and methods configured as "virtual" inspection systems are described in the following commonly assigned patents: U.S. Patent No. 8 issued to Bhaskar et al. on February 28, 2012, 126, 255 and U.S. Patent No. 9, issued December 29, 2015 to Duffy et al., 222, 895, Both of these cases are incorporated herein by reference as if set forth in their entirety. The embodiments described herein can be further configured as described in these patents. For example, One or more of the computer subsystems described herein may be further configured as described in these patents. The inspection subsystems described herein can be configured to produce wafer output in multiple modes or "different modalities." Generally speaking, A "mode" or "modality" of an inspection subsystem (these terms are used interchangeably herein) may be defined by parameter values of the inspection subsystem used to generate the output and/or image of a wafer. therefore, The different modes may differ in detecting the value of at least one of the parameters of the subsystem. In this way, In some embodiments, An optical image includes an image produced by the optical detection subsystem with two or more different values of a parameter of the optical detection subsystem. For example, In one embodiment of an optical detection subsystem, at least one of the modes uses at least one wavelength of light for illumination, It is different from at least one wavelength of light used for illumination of at least another of the multiple modes. As further described herein (eg, By using different light sources, different spectral filters, etc.), For different modes, Modes may differ in illumination wavelength. In another embodiment, at least one of the modes uses an illumination channel of the optical detection subsystem, It is distinct from an illumination channel of the optical detection subsystem for at least another of the modes. For example, As mentioned above, The optical detection subsystem may include more than one illumination channel. thus, Different lighting channels are available for different modes. In a similar way, The electron beam image may comprise an image produced by the electron beam detection subsystem with two or more different values of a parameter of the electron beam detection subsystem. For example, The electron beam inspection subsystem can be configured to produce wafer output in multiple modes or "different modalities." Multiple modes or different modalities of the e-beam inspection subsystem may be defined by parameter values of the e-beam inspection subsystem used to generate the output and/or image of a wafer. therefore, The different modes may differ in the value of at least one of the electron beam parameters of the detection subsystem. For example, In one embodiment of an electron beam detection subsystem, at least one of the modes uses at least one angle of incidence for illumination, It differs from at least one angle of incidence of illumination for at least another of the modes. The output generated by the detector for the wafer includes a plurality of scan strips of a frame of output for each of the plurality of dies on the wafer, And each of the instances of a reticle printed on the wafer includes at least two instances of the die. For example, Regardless of whether the detector(s) of the detection subsystem generate signals and/or images, A "frame" can generally be defined as the output produced by a detection subsystem (eg, signal or image portion (for example, pixel)) a relatively small portion (which can be collectively processed by the system as a whole). therefore, A "frame" of output may vary depending on the detection subsystem configuration and the configuration of any components included in the system for handling and/or processing the output generated by the detection subsystem. A swath or sub-swath of output generated for a wafer can be divided into frames, such that compared to processing an entire scanband or subband of the output simultaneously, Data handling and processing of the frame can be performed much more easily. in addition, Inspection typically divides a die or a reticle instance printed on a wafer vertically into scan bands, As shown in the figures further described herein. One or more computer subsystems are configured to detect defects on the wafer by applying a defect detection method to the output generated by the detector. Defect detection methods can be applied to the output in any suitable manner, And the defect detection method may include any suitable defect detection method known in the art. The defect detection method may include, for example, comparing the output with a threshold (a defect detection threshold), and an output having one or more values above the threshold value is judged to correspond to a defect, Instead, outputs that do not have one or more values above the threshold value are not judged to correspond to defects. Applying the defect detection method to the output may also include applying any other defect detection method and/or algorithm to the output. The location of the defect is reported by scanning the tape coordinates by the defect detection method. For example, The defect detection method may produce the result of applying the defect detection method to the output. The results may contain at least one location and any other suitable information for each defect, such as a defect ID determined by the defect detection method, Defect information (for example, size) and the like. The defect detection method can be configured such that defect locations are reported in scanband coordinates. In other words, Defect localization for defect reports can be in-sweep location or band-relative location. In one such instance, The swath coordinates of the defect can be determined relative to an origin (or other reference point) of the swath in which the defect was detected. In a specific instance, Each swept image can be regarded as a normal image. In one such instance, The upper left corner of the normal image can be used as the origin of the scan band. then, The swept coordinates of the defect can be determined relative to the upper left corner of the swath. In this way, The coordinates of the swath of the defect are determined relative to the swath in which the defect was detected, but not relative to the wafer being inspected. The defect location of a repeating defect can be different in different scan bands, This is because the swath of the wafer varies due to stage uncertainty. The embodiments described herein can effectively eliminate these differences as further described herein. One or more computer subsystems configured to align one of the swaths in a first of the dies in a first of the instances of the reticle printed on the wafer The output of one of the frames in the first and the corresponding other of the plurality of dies in the other of the plurality of instances of the reticle printed on the wafer The frame in one corresponds to the output of the other. In this way, The outputs of corresponding frames of corresponding swaths in corresponding dies in different reticle instances printed on the wafer can be aligned with each other. In other words, The output of the first frame of the first scan strip of the first of the plurality of dies of the first of the plurality of instances of the reticle printed on the wafer can be compared with other light printed on the wafer The output alignment of the corresponding frame of the corresponding scan band of the corresponding die in the mask instance entry. Aligning an output in one frame with its corresponding output in another frame as described above may be performed in any suitable manner. For example, In one embodiment, Alignment includes target-based alignment of the output of the first of the frames with the output of the corresponding other of the frames. In one such instance, Alignment may be performed using alignment target(s) in the first frame (which may be selected as further described herein) and corresponding alignment sites in the corresponding frame, And the output of aligning the alignment sites and the output generated for the alignment target may include pattern matching, match one or more characteristics of different outputs (for example, a heart, pattern edges, etc.) etc. In other words, Embodiments described herein are not limited to alignments that may be performed for alignment sites and targets. In another embodiment, Alignment includes feature-based alignment of the output of the first of the frames with the output of the corresponding other of the frames. Features used for this alignment can include patterned features in one of the wafer designs, Patterned features (which may or may not correspond to features on the wafer) in the image generated by the detection subsystem for the wafer, Features of the pattern on the wafer (such as the edges of the pattern, Centroid, corner, structure, etc.) and the like. This alignment can be performed in any suitable manner. For example, This alignment may include feature matching (eg, edge matching), It can be performed in any suitable manner known in the art. In an additional embodiment, The alignment includes a normalized cross-correlation (NCC) based alignment of the output of the first of the frames with the output of the corresponding other of the frames. Alignment can be performed using any suitable NCC method and/or algorithm known in the art. In yet another embodiment, The alignment includes a Fast Fourier Transform (FFT) based alignment of the output of the first of the frames with the output of the corresponding other of the frames. Alignment may be performed using any suitable FFT method and/or algorithm known in the art. In some embodiments, The alignment includes a Sum of Variance (SSD) based alignment of the output of the first of the frames with the output of the corresponding other of the frames. Alignment can be performed using any suitable SSD method and/or algorithm known in the art. The one or more computer subsystems are further configured to separately determine light based on differences between the swept coordinates of the output of the frame and the swept coordinates of the output of the first of the frames to which it was aligned during the alignment step. Different scanband coordinate offsets for each of the frames in the other of the multiple instances of the mask. In this way, Each frame and each scan zone in each of the dies in each of the instances of the reticle printed on the wafer can be individually and independently determined relative to one of the scan zone coordinates of its corresponding frame shift. Sweep coordinate offsets may be determined in any suitable manner based on the outputs in the frames aligned with the outputs of the first frame and their corresponding swept coordinates, respectively. The swept coordinate offset can be in any suitable format (eg, a function or formula). in addition, The information of the scanband coordinate offset can be stored in any suitable storage medium described herein. also, available in only one direction (eg, x-direction or y-direction) or in both directions (eg, In the x direction and the y direction), the scan zone coordinate offset is determined. Furthermore, Any suitable format (for example, Polar coordinates and Cartesian (Cartesian) coordinates of the scanning zone to determine the scanning zone coordinate offset. One or more computer subsystems are also configured to apply one of the different tape coordinate offsets to the tape coordinates for defect reports detected on the wafer, wherein which of the different swath coordinate offsets to apply to swath coordinates for the defect report is determined based on the other of the multiple instances of the reticle in which the defect was detected, Thereby, the swept coordinates for the defect report are transformed from swept coordinates in the other of the reticle instances to swept coordinates in the first of the reticle instances. The frame in which a defect is detected may be determined based on the scanband coordinates determined for the defect by the defect detection method, scan tape, Die and mask examples. based on the frame in which a defect was detected, scan tape, Examples of die and printed masks, The coordinate offset of the corresponding scan zone can be determined (this is because it is known which frame, scan tape, Die and mask instances determine which scanband coordinate is offset, and it is known in which reticle instance each defect was detected, This knowledge can be used to determine the appropriate swath coordinate offset based on the swath coordinates of the defect). then, The identified swath coordinate offset may be applied to swath coordinates for defect determination, Thereby, the swept coordinates of the defect are transformed from the swept coordinates of the reticle instance in which the defect is detected to the swept coordinates of the first reticle instance. This scanband coordinate transformation process may be performed individually and independently for each defect (or as many detected defects as possible) detected on the wafer. The swept coordinate offset may be applied to swept coordinates for defect reports in any suitable manner. Figure 4 illustrates the general concept of the transformation steps described above. Specifically, Figure 4 shows the translation of the defect scanband coordinates for individual reticle instances to a first inspected reticle instance. In this example, Wafer 400 includes a number of reticle instances formed thereon and including reticle instances 402 and 404 . In the example shown in Figure 4, The reticle instance 404 can be used as the first detected reticle instance, And the locations of defects detected on the reticle instance 402 can be transformed into the swept coordinates of the reticle instance 404 . Specifically, As described above, The applying step maps the defect locations to the swept coordinates of the first reticle instance by applying a swept coordinate transformation between the first reticle instance and other reticle instances on the wafer. Transforming all defect locations into a first reticle instance/sweep coordinate system is substantially accurate as described herein. thus, The defect of each repeating defect is much tighter than currently used detection performed without this feature. Specifically, In the currently used test, Since the swaths are not registered or aligned with each other, The defects of a repeating defect may be relatively distant from each other on a reticle stack. Conversely, In the embodiments described herein, All other reticle instances are registered to the first reticle instance and then defect locations from the other reticle instances are precisely mapped to the first reticle instance. Since the mapping system is substantially accurate, So the defects of one repeating defect are mapped to the first reticle instance and are substantially close to each other. Although one particular reticle instance (reticle instance 404) is shown in FIG. 4 (and other figures described herein) as being used as the first of a plurality of reticle instances, However, the reticle instance used as the first of the plurality of reticle instances may be different from the reticle instances shown herein. Generally speaking, Any reticle instance on the wafer scanned by the inspection subsystem (thereby generating the output of the reticle instance) may be used as the first of a plurality of reticle instances. In some instances, It may be practical to use the first reticle instance scanned as the first of a plurality of reticle instances. However, Any suitable reticle instance may be used as the first reticle instance for the embodiments described herein. In this way, Embodiments described herein determine relative defect location (or relative defect location) with substantially high accuracy. As further described herein, Transforms defect locations from the swept coordinates of one reticle instance to the swept coordinates of another reticle instance. therefore, The relative defect location is determined herein with respect to different swaths in a reticle instance. thus, Relative defect localization determined as described herein is different from absolute defect localization, Relative defect location is generally defined as defect location relative to wafer coordinates. In this way, The relative defect location accuracy of the embodiments described herein is relative to the accuracy of the scan belt coordinates. In one embodiment, One or more computer subsystems are configured to perform the above-described alignment, Determination and application steps. For example, Embodiments described herein improve defect location accuracy with respect to a particular reticle instance (the first reticle instance) and scan strip without any design information for multi-die reticle inspection. For a multi-die mask, A mask is a mask. A die is a wafer. If a mask contains a chip, Then it is a single-die mask. If a mask contains multiple chips (eg, 3 wafers), Then it is a multi-die mask. In another embodiment, One or more computer subsystems are not configured to perform any steps using the design information of the device formed on the wafer. For example, As described above, In one embodiment, Alignment without design information, Determination and application steps. in addition, The other steps described in this article may be performed without design information. therefore, The embodiments described herein may be implemented regardless of whether design information is available in the systems and methods described herein. In one embodiment, The wafer is printed with a multi-die reticle prior to detection. For example, Embodiments described herein can be used to detect defects on wafers printed with a multi-die reticle and then determine which defects detected on the wafer are due to the multi-die reticle Defects on multi-die masks. Determining which defects detected on the wafer are attributable to the multi-die reticle may be performed by identifying repeating defects or "repeating defects" on the wafer. In this way, Defects detected on the wafer attributed to the multi-die reticle used to print the wafer can be identified by repeating the defect analysis, This can be performed as described further herein. In some embodiments, One or more computer subsystems are configured to determine whether a defect is a repeat defect based on the transformed scanband coordinates of the defect. In this way, Embodiments described herein can be configured to perform duplicate defect analysis to determine which defects are duplicate defects. A repeating defect is generally defined as a group that occurs at the "same" reticle instance coordinates (eg, two or more) defects (wherein the reticle instance coordinates are identical or identical within some predetermined allowable tolerance, then they may be deemed to be "identical"). in addition, When scanning with a fixed swath, Defects for a repeating defect are located on the same corresponding swath (the same swath in multiple reticle instances). (When scanning with a fixed swath, A reticle instance image is acquired by scanning multiple sub-die images or scanning strip images. on a wafer, There are many grain columns. For each grain column, The positions of the corresponding scanband images are the same. In other words, Each die column is scanned with the same strip layout. ) performs duplicate defect analysis to find duplicate defects from all detected events. As further described herein, By transforming the defect location from the swept coordinates of the reticle instance in which the defect was detected to the swept coordinates of only one of the reticle instances on the wafer, Defect locations relative to a particular reticle instance and scanband can be determined with substantially high accuracy. If the defect position is more precise relative to the scan zone in which the defect is located, Repeat defect analysis can then use a smaller repeat defect tolerance and thereby can generate fewer false repeat defects and reduce repeat defect detection time. thus, Embodiments described herein allow a 100-fold to 10-fold reduction in the repetitive defect search area in repetitive defect analysis, 000 times (or 10 times less repetitive defect tolerance, 10 pixels to 1 pixel for 100 times area reduction, 10, 000 times the area reduction of 10 pixels to 0. 1 pixel). The term "repeated defect tolerance" as used herein is defined as the radius centered on a defect location. The repeating defect search range will be approximated as [-radius, +radius]. The search area is the square of the radius multiplied by π. The minimum search range in pixels is from [-0. 1, 0. 1] to [-1, 1], depending on the number of identifiable alignment targets (or the accuracy of alignment performed in the alignment step). The minimum search area is set from 0. 0314 pixels squared to 3. 14 pixels square (compared to 314 pixels square). Reducing the repeat defect search area in this way will potentially significantly reduce false repeat defects. Figure 3 illustrates how reducing the repetitive defect search area will reduce false duplicate defect detection. In general, as described with respect to this figure, there is a relationship between defect location accuracy, repeat defect tolerance, and false repeat defect detection, and relative defect location accuracy has an effect on repeat defect detection. A duplicate defect tolerance is a user-defined parameter that determines the duplicate defect search area. A reticle stack is a view of a defect on several aligned reticle instances superimposed together. All defects within a repeating defect search area on a reticle stack are considered repeating defects belonging to a unique repeating defect. Unique repeating defects are distinguished by their isomask coordinates. In one such example, a duplicate defect detection algorithm may determine that if a defect is detected within a duplicate defect search area in at least three reticle instances, the three defects may be identified as duplicate defects. In the reticle stack 300 shown in FIG. 3, defects 304 and 306 are shown. Defect 304 is an instance of a disturbing point defect, and defect 306 is an instance of a defect of interest (DOI). In particular, defects 304 shown by lighter shading in FIG. 3 are considered non-repeating defects, and defects 306 shown by darker shading in FIG. 3 are considered repeating defects. The defects shown in Figure 3 are not meant to show any actual defects detected on any actual wafer. Instead, these deficiencies are only shown in FIG. 3 to facilitate understanding of the embodiments described herein. The reticle stack map 300 may be generated in any suitable manner, for example, by overlaying information on defects detected in reticle instances printed on a wafer. The overlaid information may include where the defect is located, and the defect may be indicated by a symbol (such as the shaded circle shown in FIG. 3 ) at its location in the reticle stackup. In this way, defects that are spatially consistent with each other across multiple reticle instances can be identified in the reticle stackup. In other words, defects detected at the same or substantially the same location among multiple reticle instances can be identified in the reticle stack map. The duplicate defect search area may be set based on the relative defect location accuracy of the defects for the duplicate defect analysis. In particular, a larger repetitive defect search area may be used when the relative defect location accuracy is low, and a smaller repetitive defect search area may be used when the relative defect location accuracy is high. In this way, the repeating defect search area can be varied based on relative defect location accuracy, so that repeating defects can be identified regardless of the accuracy with which the location has been determined. As shown in FIG. 3, if the repeating defect search area 308 is set large enough that it correctly identifies the defect 306 as a repeating defect, the same repeating defect search area will also incorrectly identify some defects 304 as repeating defects. In this way, due to the relatively poor relative defect location accuracy of the defects detected in the reticle stack map 300, a larger repeat defect tolerance is used and a false repeat defect is detected. However, if the relative positional accuracy of the defects is high, the repeating defects are more closely spaced and the non-repeating defects are still randomly distributed. The repeating defect search area can be reduced while still correctly identifying repeating defects, which in turn can reduce the number of non-repeating defects that are incorrectly identified as repeating defects. For example, defects 304 and 306 are shown as shown in reticle stack 302, which may be produced as described above. As with reticle stackup 300, in reticle stackup 302, defects 304 are considered non-repeating defects, and defects 306 are considered repeating defects. When the defect location accuracy is high, a smaller repeated defect search area can be used for the repeated defect analysis of the reticle stack. Defects 306 may be correctly identified if repeating defect search area 310 having an area smaller than one of repeating defect search area 308 can be used in reticle stack map 302 due to determining relative defect locations with greater accuracy as described herein A repeating defect is identified without any of the defects 304 being incorrectly identified as a repeating defect. For example, as shown in FIG. 3, even the three most closely spaced defects 304 are still not within the repeating defect search area 310 and thus would not be identified as repeating defects. In this way, by reducing the repeating defect search area, the number of defects incorrectly determined to be repeating defects can be reduced. In contrast to the embodiments described herein, currently used methods and systems for inspecting wafers printed with multi-die reticles detect defects on a scan-by-scan strip and report the defect location relative to the wafer. This method yields good defect locations on each swath because pre-mapping and run-time alignment (RTA) aligns reticle instances in the same swath or reticle row. However, there is no mechanism for aligning reticle instances between swaths across a reticle row. Repeated defect locations between swaths on different reticle instances can be twice as large as swath position accuracy, eg, about 300 nm or about 10 pixels. Ideally, in such cases, the repeating defect tolerance should be set equal to or greater than 300 nm to find all repeating defect instances. However, this large repeating defect tolerance causes more random defects to be detected as repeating defects. As further described herein, the embodiments described herein determine relative defect location or location with substantially high accuracy. In contrast, the term absolute defect location accuracy or defect location accuracy (DLA) as commonly used in the art refers to accuracy relative to wafer coordinates. However, absolute DLA is not necessary, and defect location accuracy relative to a common reticle-sweep coordinate is sufficient for repetitive defect analysis. If the defect location is more precise in a reticle stack where reticle location relative to the wafer is not considered, more random events can be removed (ie, excluded as non-repeating defects). Repeated defect analysis can use a smaller repeat defect tolerance and produce fewer false repeat defects if the defect location is more precise relative to its equivalent reticle instance coordinates. It should also be noted that the embodiments described herein focus on methods and systems for detecting defects with substantially high relative positional accuracy. Repeat defect analysis may or may not be performed by the embodiments described herein. For example, the substantially high relative positional accuracy of defect locations determined by the embodiments described herein provides advantages for repetitive defect detection regardless of how it is performed. In other words, the embodiments described herein provide substantially accurate relative positioning of defects that can then be used in any iterative defect detection process. In this manner, the embodiments described herein may be used with any repetitive defect analysis method or system because the results of the transformed relative defect locations generated by the embodiments described herein may be input to any repetitive defect analysis method or system. system. Additionally, the substantially high accuracy relative defect localization resulting from the embodiments described herein provides advantages for repetitive defect analysis regardless of how the repetitive defect analysis is performed. In another embodiment, one or more computer subsystems are configured to determine whether a defect on the wafer is caused by a reticle used to print patterned features on the wafer based on the transformed scanband coordinates of the defect. In one such embodiment, the reticle is an extreme ultraviolet (EUV) reticle. For example, embodiments described herein can be used for EUV mask monitoring print inspection, which is performed to periodically detect repeating defects during wafer production. In other words, determining whether a defect on the wafer is caused by the reticle may include performing a repeat defect analysis as described above and then inspecting the detected repeat defects to determine whether they correspond to a certain feature or defect on the reticle. As further described herein, embodiments are particularly suitable for detecting repeating defects on wafers printed with multi-die reticles. In addition, the embodiments described herein are particularly suitable for detecting repeating defects on wafers caused by EUV masks (ie, masks designed for EUV lithography performed using EUV light). Because these masks do not contain protective films, they are more susceptible to contamination that occurs during the lithography process. As such, these reticles tend to need to be inspected at regular intervals to determine whether they are still suitable for a lithography process. Embodiments described herein provide methods and systems that are particularly suitable for such reticle inspection. In an additional embodiment, the output of the first of the frames used in the aligning step is the output of the alignment target of one of the first of the frames, the corresponding other of the frames used in the aligning step The output of one is the output of the corresponding alignment site in the other of the frame, and the computer subsystem(s) are configured to select the first of the plurality of scanbands of the first of the plurality of instances of the reticle and selecting the alignment target includes: selecting a pair of each of the frames in the first of the plurality of scanbands of the plurality of instances of the reticle at least one of the quasi-targets. In other words, at least one alignment target may be selected among each of the frames in a swept band in the reticle instance to be used as the first reticle instance. This alignment target selection can be performed for each swath on the wafer to be scanned. In this way, at least one alignment target may be selected in each of the frames in each of the scan bands in the reticle instance to be used as the first reticle instance. One such embodiment is shown in FIG. 5 . In this embodiment, wafer 500 includes a number of reticle instances formed thereon, including reticle instance 502, which may be used as the first of a plurality of reticle instances in the embodiments described herein . In this embodiment, the computer subsystem(s) (not shown in FIG. 5) may perform a select alignment target step 504 in which alignment targets are selected from each swath in the first reticle instance. In particular, as shown in FIG. 5, a detection subsystem configured as described herein may scan a first reticle instance of a number of swaths 506, including swath 1 through swath N. (Although the reticle instances are shown in FIG. 5 as being scanned with 4 swaths of vertically divided reticle instances, the reticle instances on wafers described herein may be scanned in any suitable number of swaths, such as Depends on the reticle and die configuration and the inspection subsystem configuration.) In this way, the inspection subsystem can generate inspection data or output for several swaths of the wafer. Selecting an alignment target in step 504 may include selecting at least one (eg, one swath, some (but not all) swaths, or all of the swaths depending on which one or more of the swaths are to be inspected for repetitive defects the alignment target in the swept tape). In particular, an alignment target may be selected for each of the swaths for which repeated defect analysis is to be performed. Additionally, alignment targets can be independently selected for each of the scan bands. For example, alignment targets in one of the swaths may be selected independently of alignment targets in the other (or all of the others) of the swaths. The number of alignment targets selected in each swath can vary depending on the number of frames in the swath. For example, an alignment target may be selected in each of the frames in any swath in which the alignment target is selected. However, it is also possible to select more than one target in each frame. In general, the more alignment targets identified and selected for the embodiments described herein, the smaller the search area available for repetitive defect analysis. Additionally, there is no guarantee that a suitable alignment target will be found in each frame. If an alignment target cannot be found for a particular frame, a normalized cross-correlation over the entire frame (or another alignment method described herein) can be used to align the reticle instances, or an adjacent The information in the frame is aligned to the mask instance. The alignment targets may include any suitable alignment targets and patterned features. A suitable alignment target may be an image pattern that meets certain criteria. For example, alignment targets can be selected to include patterned features that are unique in one or more properties (eg, shape, size, orientation, grayscale change, etc.) Alignment with relatively high confidence. Alignment targets may also preferably include features that make them suitable for alignment in two dimensions (x and y). In general, there are many ways to select a suitable alignment target within a frame of the detection output, and the alignment target can be selected in any of these ways as described herein. It should be noted, however, that the embodiments described herein are preferably implemented without the use of design information (eg, design data) of the wafer, since design information may not always be available (eg, for intellectual property reasons). In this way, alignment target selection described herein may be performed using the output (eg, image) generated by the detection subsystem for the first reticle instance (as opposed to using design information to select alignment targets). Thus, the embodiments described herein provide the ability to achieve substantially high relative defect location accuracy for repetitive defect analysis without design data. As shown in FIG. 5 , the computer subsystem(s) may be configured to perform the save alignment target step 508 . The selected alignment target can be saved (or stored in one or more of the computer-readable storage media described herein) in a number of different ways. Unless otherwise mentioned herein, the selected alignment target information may include any available information for the alignment target, but will most likely include at least the alignment target's swept coordinates, the frame in which the alignment target is located and aligning the scan zone in which the target is positioned. In this way, the saved alignment target data can look like: target(ID) = (alignment target scanband coordinates, frame ID, scanband ID, . . . ). Thus, the computer subsystem(s) may generate stored target information 510 . Then, the stored target information can be used as described further herein. In another embodiment, the output of the first one of the frames used in the alignment step is the output of the alignment target of one of the first ones of the frames, and the corresponding other of the frames used in the alignment step The output of one is the output of the alignment sites in the corresponding other of the frame, and the computer subsystem(s) are configured to: select one of the plurality of swaths in the first of the plurality of mask instances the alignment targets in the frame; separating the selected alignment targets into groups based on the plurality of swaths in which the alignment targets are positioned, such that each of the groups corresponds to less than all of the plurality of swaths; and based on one or Which of the different parts of the multiple computer subsystems perform detection, alignment, determination, and application for different ones of the group to store information on the selected targeting target in the group to one or more of the computer subsystems? in different parts. For example, the computer subsystem(s) may select an alignment target as further described herein, and the computer subsystem(s) may save the target to different Imaging Computer (IMC) nodes ( not shown) and group the targets into scanbands. In particular, the target may be stored in an IMC node that processes the detection output of the swath in which the target is located. In this way, the IMC node may store only the alignment targets that will be required by the other steps described herein. This grouping and storage is also not limited to only IMC nodes, but can be used for any other storage medium described herein. In this way, as shown in FIG. 5, in one embodiment, alignment targets selected from swath 1 may be stored as target 1, which may be a group of alignment targets, and selected from swath N The alignment targets can be stored as target N, which can be another group of alignment targets. Alignment target information may likewise be stored for any other swath in which an alignment target is selected. Thus, different groups of alignment targets can be generated by the computer subsystem(s), and each of the different groups can correspond to one of the different swaths. Then, each of the different target groups can be stored in different IMC nodes that will use the different target groups. For example, a group of targets 1 may be stored in a first IMC node that will process detection outputs in scanband 1, and a group of targets N may be stored in IMC node N that will process detection outputs in scanband N . Targeting information in other groups may be stored in other IMC nodes in a similar manner. In some embodiments, the output of the first one of the frames used in the aligning step is the output of the alignment target of one of the first ones of the frames, and the corresponding other of the frames used in the aligning step The output of the frame corresponds to the output of the alignment sites in the others, and one or more computer subsystems are configured to direct the generated energy to the wafer in the detection subsystem and the detector to detect the output from the wafer. When the energy of the circle is used to perform an inspection scan, the free detector selects the alignment target in the frame in the scan band of the first of the multiple instances of the reticle for the output generated by the wafer. In this manner, alignment target selection, which may be performed as described further herein, may be performed during the runtime of a wafer inspection. Thus, the embodiments described herein provide the ability to achieve substantially high relative defect location accuracy for repetitive defect analysis without a setup scan (since alignment target selection does not require a setup scan). Thus, alignment target selection performed as described herein may be run-time target identification for relative alignment of a first inspected reticle instance. In other words, when the first reticle instance is detected, the alignment target is selected from the first reticle instance. At least one target can be selected per frame. This targeting selection can be further performed as described herein. 6 shows a runtime procedure that may be performed for any other reticle instance under inspection after an alignment target has been selected from a first reticle instance as described above. In FIG. 6, wafer 600 has several reticle instances formed thereon, including reticle instance 602 (which may be used as the first of a plurality of reticle instances as described herein) and a reticle Instance 608 (which may be another inspected reticle instance on the wafer). As further described above, the first reticle instance 602 can be scanned, thereby producing output from a number of scan strips 604 of selected targets 606 thereof as described herein. In this embodiment, the targets may be selected during runtime of the detection procedure and may be stored on corresponding IMC nodes (not shown) of the computer subsystem(s) as further described herein. For example, target 1 may be stored on IMC node 1, ... target N may be stored on IMC node N, and so on. When the other reticle instances 608 are then scanned, thereby generating scan bands 610, the output of the alignment target 606 may be paired with the output of the corresponding frame and the alignment points in the scan band 610 in an alignment step 612 allow. This alignment step can be performed as described further herein. Next, the results of the alignment step may be used in a transform coordinates step 614, which may include the output of the swept belt coordinates based on the outputs of the alignment sites and the outputs of the alignment targets aligned with their equivalents in the alignment step The difference between the swath coordinates respectively determines the different swath coordinate offsets for each of the alignment sites in the other reticle instances; and applies one of the different swath coordinate offsets to the target on the wafer Sweep coordinates for a detected defect report, where it is determined based on the other of the plurality of reticle instances in which the defect was detected which one of the different swept coordinate offsets to apply to the swept coordinates for the defect report. In this manner, transform coordinates step 614 may transform the swept coordinates for the defect report from swept coordinates in reticle instance 608 to swept coordinates in first reticle instance 602 . These steps can be performed for all reticle instances inspected on the wafer. In this manner, embodiments described herein may perform a reticle instance-sweep zone coordinate transformation using run-time identified targets. As further described herein, when inspecting any other reticle instance, the first reticle of each frame (and thus each swath) can be determined by aligning the target of the first reticle instance with the inspected reticle instance. An offset between the scanband coordinates of a reticle instance and the detected reticle instance. After any defect is detected, its position in the reticle instance-sweep tape coordinates is transformed into the reticle instance-sweep tape coordinates of the first reticle instance. In this way, the location of defects in all reticle instances is represented by the scanband coordinates of the first reticle instance. In yet another embodiment, the output of the first one of the frames used in the alignment step is the output of the alignment target of one of the first ones of the frames, and the corresponding other of the frames used in the alignment step The output of one is the output of the frame corresponding to the alignment sites in the other, and the computer subsystem(s) are configured to: the detectors in the inspection subsystem generate data for detecting defects on the wafer In a set scan that outputs only one of the multiple instances of the reticle performed previously, the free detector selects the one of the multiple scan bands of the one of the multiple instances of the reticle for the wafer-generated output. Aligning targets in the frame; generating a data structure containing information of the selected alignment targets; and storing the data structure in a non-transitory computer-readable storage medium. The "one mask instance" or "set mask instance" used for setting can be any mask instance on the wafer. In this way, alignment targets can be selected and stored in a set scan of the wafer. For example, if processing power is relatively critical and target finding during inspection (run time) is not acceptable, a setup scan can be used to select targets offline. This targeting selection can be performed as shown in FIG. 5 . However, instead of performing target selection during detection runtime as described above (where information on the selected target may be stored on the IMC nodes of the computer subsystem(s)), when a target is selected during a set scan When the target is on target, the target target information can be stored in the off-line storage. Offline storage can be, for example, a database in a memory medium or one of the non-transitory computer-readable media described herein, which is accessible by the computer subsystem(s). In this manner, embodiments described herein may include respective settings-based targeting identification and offline storage of targets. Alignment target selection performed during a setup phase of detection may be performed in other ways as described herein. For example, in a set scan, the alignment target can be selected from a reticle instance. At least one target can be selected per frame. Next, save the target to a suitable storage medium (such as an offline database). Alignment targets selected during a setup phase of inspection can be used for defect scanband coordinate transformation as described further herein. For example, the use of a set target based defect scan zone coordinate transformation can be performed as shown in FIG. 6 . However, unlike the runtime-aligned target selection described above, in this embodiment, the target 606 may be stored in off-line storage rather than on the IMC node of the computer subsystem(s). During inspection, by aligning the target of the set reticle instance with the image of the inspected reticle instance, the distance between the swept coordinates of the set reticle instance and the inspected reticle instance for each frame can be calculated An offset, which can be performed as described further herein. After any defect is detected, the position in the reticle instance-sweep coordinates of the reticle instance in which the defect was detected can be transformed to the reticle instance-sweep coordinates of the set reticle instance , as described further herein. In this way, defects in all other reticle instances can be represented according to the scanband coordinates of the set reticle instance. In another embodiment, the output of the first one of the frames used in the alignment step is the output of the alignment target of one of the first ones of the frames, and the corresponding other of the frames used in the alignment step The output of one is the output of the frame corresponding to the alignment sites in the other, and one or more computer subsystems are configured to generate detectors in the detection subsystem for detecting defects on the wafer In a set scan of only one of the multiple instances of the reticle performed before the output of the reticle, the free detector selects the output from the wafer in the multiple scan bands of the one of the multiple instances of the reticle. targeting targets in the frame; generating a data structure containing only location information for the selected targeting targets; and storing the data structure in a non-transitory computer-readable storage medium. In this way, alignment targets can be selected in a set scan of the wafer and their equivalent positions can be stored. Only target locations can be saved during setup to reduce database (or other data structure) size. Accordingly, the embodiments described herein may be configured for respective settings-based alignment target identification and offline storage of target locations. In a setup scan, select the alignment target from One Mask Instance or Set Reticle Instance. At least one target can be selected per frame. Then, the target location information can be stored in an offline database or any other suitable storage medium. One such embodiment is shown in FIG. 7 . Any reticle instance can be selected as a set reticle instance. In FIG. 7, the first reticle instance is selected as the set reticle instance. In this embodiment, wafer 700 may include a number of reticle instances formed thereon, including reticle instance 702, which may be used as one of a plurality of reticle instances in the embodiments described herein . In this embodiment, the computer subsystem(s) (not shown in FIG. 7) may perform a select alignment target step 704 in which alignment targets are selected from each swath in the set reticle instance. In particular, as shown in FIG. 7, a detection subsystem configured as described herein may scan a set of reticle instances for a number of swaths 706, including swath 1 through swath N. In this way, the inspection subsystem can generate inspection data or output for several scan strips of the wafer. Selecting an alignment target in step 704 may be performed as described herein. Alignment targets may be configured as further described herein. As shown in FIG. 7 , the computer subsystem(s) may be configured to perform the save alignment target position step 708 . The location of the selected alignment target can be saved (or stored in one or more of the computer-readable storage media described herein) in a number of different ways. Unless otherwise mentioned herein, the selected alignment target positional information may include any available positional information for the alignment target, but most likely will include at least the alignment target's swept coordinates, the alignment target located in it The frame and the scan strip in which the alignment target is positioned. In this way, the saved alignment target data can look like: target(ID) = (alignment target scanband coordinates, frame ID, scanband ID, . . . ). Thus, the computer subsystem(s) may generate stored target location information 710, which in this case only contains location information. In particular, alignment target position information stored for alignment targets in swath 1 may include position 1, . . . alignment target position information stored for alignment targets in swath N may include position N, and so on. Then, the stored target location information can be used as described further herein. In one such embodiment, one or more computer subsystems are configured to obtain the output generated by the detector for a selected alignment target in multiple instances of the reticle during wafer inspection based on positional information only . In this way, a target (eg, target image) may be generated during detection based on the target location. One such embodiment is shown in FIG. 8 . In this figure, wafer 800 includes several reticle instances, including reticle instance 802 (which is used in this embodiment as a set reticle instance) and reticle instance 808 (which in this embodiment is Another instance of the inspected reticle). As further described herein, in a set scan, the reticle instance 802 may be scanned to thereby generate the output of a number of scan strips 804 of the reticle instance. The output may then be used to select alignment targets as further described herein, and only the location information of those alignment targets may be stored as stored location information 806 . In some of these embodiments, one or more computer subsystems are configured to: separate selected alignment targets into groups based on the plurality of scan strips in which the alignment targets are located, such that each of the groups corresponds to less than all of the plurality of scan bands; and targeting of selected targets in a group based on which of the different portions of the one or more computer subsystems perform detection, alignment, determination, and application, respectively, for different ones of the group The captured output is stored in different parts of one or more computer subsystems. For example, location information for selected alignment targets may be stored in off-line storage based on the scan zone in which the alignment targets are located. In this way, alignment targets can be grouped into scanbands and then position information for different groups of alignment targets can be stored in different parts of the computer subsystem(s) (eg, based on the which parts will process the output produced for each scanband). The location information of the level target may be stored in other ways as described further herein. During wafer inspection, alignment target locations identified in reticle instance 802 may be scanned based on stored location information 806, as shown in imaging target locations step 812. In this manner, imaging target location step 812 may include grabbing and storing a target patch on a first reticle instance of a plurality of inspected reticle instances. A reticle instance 808 may also be scanned during wafer inspection to thereby generate scan bands 810 of the reticle instance. Then, the stored alignment target tile grabbed in step 812 and the output generated for the reticle instance 808 at the corresponding alignment point in the corresponding frame and swath can be used as further described herein to generate Alignment step 814 is performed. Next, the results of the alignment step may be used to perform a transform coordinates step 816, which may be performed as further described herein, to thereby transform the scanband coordinates of defects detected in reticle instances 808 to reticle instances The scanband coordinates in 802. Accordingly, the embodiments described herein can be configured to perform reticle instance-to-sweep coordinate transformation using target positions based on settings. During detection, target tiles (ie, tile images, whose equivalents are relatively small images produced at a particular location) may be grabbed based on target locations and stored on an imaging computer node. During target tile capture, only the location of the alignment target can be scanned for image capture. However, during target tile grabbing, the entire first reticle instance to be inspected can be scanned to thereby generate stored alignment target positions and outputs that will be used to detect defects in the first reticle instance two images. An offset between the swept coordinates of the first reticle instance and the inspected reticle instance of each frame can be determined by aligning the target of the captured image with the image of the inspected reticle instance. After any defects are detected, transform the position in the reticle-sweep coordinates of the reticle instance in which the defect was detected into the reticle-instance-sweep coordinates of the first reticle instance , as described further herein. In this way, defects in all other reticle instances can be represented in terms of the scanband coordinates of the first reticle instance. In some embodiments, one or more computer subsystems are not configured to determine the location of defects relative to the wafer. For example, none of the embodiments described herein include or require determining the location of defects relative to a reference point on a wafer or other wafers. Instead, the only defect locations determined in (or by) the embodiments described herein are the swept coordinates reported by the defect detection step and the transformed swept coordinates determined by the apply step. Since the embodiments described herein are specifically built to address the relative defect location accuracy in repetitive defect analysis (which is achieved by the embodiments described herein by transforming the scanband coordinates of defects in one reticle instance to another ray improved scanning belt coordinates in the mask case), so other (eg, wafer-relative) defect locations need not be determined by the embodiments described herein. In another embodiment, one or more computer subsystems are configured to repeatedly align, determine, and apply for the other of the frames in the plurality of swaths in the first of the plurality of instances of the reticle step. For example, although some embodiments are described herein with respect to a first frame and a first swath in the first reticle instance, the embodiments may be directed to other swaths in the first reticle instance Other frames perform alignment, determination and application. In other words, the embodiments described herein may perform the alignment, determination, and application steps for one, some (eg, two or more), or all of the frames inspected on a wafer. Additionally, embodiments described herein may be performed for one, some (eg, two or more), or all defects detected on a wafer regardless of location for defect reports. The embodiments described herein have several advantages over other methods and systems for determining defect location. For example, the embodiments described herein transform defect locations from all reticle instances to common coordinates during inspection and significantly increase relative defect location accuracy. In an additional example, the stripe-to-stripe (reticle instance to reticle instance) offset is removed from the defect location. In particular, after measuring or determining the swath offset, the defect location can be transformed from one swath in one reticle instance to the corresponding swath in the first reticle instance. Therefore, after the transformation, the offset between the swept and reticle instances is removed. In this way, the defect location relative to one reticle instance-scan band variation (approximately 0. 1 pixel to about 1 pixel) is much smaller than the variation of defect locations across multiple swaths (about 10 pixels). In another example, for repetitive defect analysis, the search area reduction provided by the embodiments described herein may be a factor of 100 to 10,000, and the search range (repeated defect tolerance) reduction provided by the embodiments described herein About 10 times to about 100 times. In an additional example, the embodiments described herein potentially significantly reduce false repetition defects. In other words, the embodiments described herein can reduce false duplicate defect counts for duplicate defect analysis. Furthermore, unlike other defect localization determination methods such as alignment inspection output with design data and standard reference die (SRD) methods, the embodiments described herein are useful for non-background based inspection (non-CBI) and multi-die light The hood use case is especially beneficial. Furthermore, unlike previously used defect location determination methods and systems, the embodiments described herein do not necessarily require a setup scan and are easier to use. More specifically, with respect to previously used SRD methods, the embodiments described herein and these previously used methods may have the same relative defect location accuracy. Both embodiments and SRD methods described herein can also align targets and detect images during runtime, and some embodiments and SRD methods described herein both save target positions to a database. However, unlike the SRD method and system, the embodiments described herein do not generate off-line a golden reference image (of an entire die) used during inspection. Additionally, unlike SRD methods and systems, some embodiments described herein do not necessarily require a setup scan. Therefore, the embodiments described herein are simpler in development and ease of use than the SRD method and system. Furthermore, the SRD method and system and the embodiments described herein are suitable for different use cases. In particular, the SRD method and system are suitable for single-die reticle use cases, and the embodiments described herein are particularly suitable for multi-die reticle without design information. With regard to previously used CBI methods, both the embodiments described herein and these previously used methods can align the target with an inspection image during runtime. Additionally, like the CBI method, some embodiments described herein may save the target to a database. However, unlike previously used CBI methods and systems, the embodiments described herein do not require design information and do not require design data aligned inspection outputs. Additionally, unlike CBI methods and systems, some embodiments described herein do not necessarily require a setup scan. Additionally, unlike CBI methods and systems, some embodiments described herein do not save alignment target output (eg, images) and instead only save alignment target location information. Furthermore, the embodiments described herein provide potentially better relative defect location accuracy than previously used CBI methods and systems. Furthermore, the CBI method and system and the embodiments described herein are suitable for different use cases. In particular, the CBI method and system are suitable for multi-die masks with design information use cases, and the embodiments described herein are particularly suitable for multi-die masks without design information. Embodiments described herein also provide an easier way to achieve substantially high defect location accuracy for repetitive defect analysis without sacrificing performance. Compared to other existing methods, this embodiment is simpler and simpler to use by the user. Repetitive defect analysis is materially important to reduce disruption rates for EUV print inspection use cases, which will most likely be adopted by advanced semiconductor manufacturers in the coming years. Each of the embodiments described herein can be further configured as described herein. For example, two or more of the embodiments described herein may be combined into a single embodiment. Another embodiment relates to a computer-implemented method for transforming the location of detected defects on a wafer. The method includes detecting defects on a wafer by applying a defect detection method to an output generated by a detector of an inspection subsystem for the wafer, the inspection subsystem as further described herein configuration. The location of the defect is reported by scanning the tape coordinates by the defect detection method. The output generated by the detectors of the inspection subsystem includes scan strips of a frame of output of each of the dies on the wafer, and of instances of a reticle printed on the wafer Each includes at least two instances of the plurality of dies. The method also includes aligning a frame in a first one of a plurality of dies in a first one of a plurality of dies in a first one of the plurality of instances of the reticle printed on the wafer The output of a first corresponds to the frame in the corresponding other of the dies in the other of the instances of the reticle printed on the wafer output of others. Additionally, the method includes separately determining multiple instances of the reticle based on differences between the swept coordinates of the output of the frame and the swept coordinates of the output of the first of the frames to which it was equally aligned in the alignment step. The different swept coordinates of each of the frames in the others are offset. The method further includes applying one of the different swept coordinate offsets to swept coordinates reported for defects detected on the wafer, wherein the other is based on the multiple instances of the reticle in which the defect was detected Determining which of the different swept coordinate offsets to apply to swept coordinates for defect reports, thereby transforming swept coordinates for defect reports from swept coordinates in the other of the multiple instances of the reticle to Sweep zone coordinates in the first of the multiple instances of the reticle. Detection, alignment, determination and application are performed by one or more computer subsystems coupled to the detection subsystem. Each of the steps of the method can be performed as further described herein. The method may also include any other step(s) that may be performed by the detection subsystem(s) and/or the computer subsystem(s) or system(s) described herein. The steps of the method may be performed by one or more computer subsystems that may be configured according to any of the embodiments described herein. Additionally, the methods described above may be performed by any of the system embodiments described herein. An additional embodiment relates to a non-transitory computer-readable medium storing program instructions executable on a computer system to perform a computer-implemented method for transforming the location of defects detected on a wafer. One such embodiment is shown in FIG. 9 . In particular, as shown in FIG. 9 , non-transitory computer-readable medium 900 includes program instructions 902 executable on computer system 904 . A computer-implemented method may comprise any step(s) of any method(s) described herein. Program instructions 902 implementing methods, such as those described herein, may be stored on computer-readable medium 900 . The computer-readable medium may be a storage medium, such as a magnetic or optical disk, a magnetic tape, or any other suitable non-transitory computer-readable medium known in the art. Program instructions may be implemented in any of a variety of ways, including program-based techniques, component-based techniques, and/or object-oriented techniques, among others. For example, if desired, program instructions may be implemented using ActiveX controls, C++ objects, JavaBeans, Microsoft Foundation Classes ("MFC"), SSE (Streaming SIMD Extensions), or other technologies or methods. Computer system 904 may be configured according to any of the embodiments described herein. All methods described herein can include storing the results of one or more steps of the method embodiment in a computer-readable storage medium. The results can comprise any of the results described herein and can be stored in any manner known in the art. The storage medium may include any storage medium described herein or any other suitable storage medium known in the art. After the results have been stored, the results can be accessed in a storage medium and used by any of the method or system embodiments described herein, formatted for display to a user, by another software module, method, or system usage, etc. For example, one or more computer subsystems can output information on defects identified as repeating defects to a reticle repair system, and the reticle repair system can use the information on defects identified as repeating defects to perform a repair process on the reticle In order to thereby eliminate the defects on the mask. In view of this description, further modifications and alternative embodiments of various aspects of the invention will be apparent to those skilled in the art. For example, the present invention provides methods and systems for translating the location of detected defects on a wafer. Accordingly, this description should be construed as illustrative only and for the purpose of teaching those skilled in the art a general way to practice the invention. It should be understood that the forms of the invention shown and described herein are to be considered as presently preferred embodiments. All as will be apparent to those skilled in the art having the benefit of this description of the invention, elements and materials may be substituted for those shown and described herein, parts and procedures may be reversed, and certain aspects of the invention may be utilized independently. some characteristics. Changes may be made in elements described herein without departing from the spirit and scope of the invention as described in the following claims.

10‧‧‧Detection Subsystem 14‧‧‧Wafer 16‧‧‧Light Source 18‧‧‧Optics 20‧‧‧Lens 21‧‧‧Beam Splitter 22‧‧‧Staging 24‧‧‧Light Collector 26‧‧‧Components 28‧‧‧Detectors30‧‧‧Concentrators 32‧‧‧Components 34‧‧‧Detectors36‧‧‧Computer subsystems 102‧‧‧Computer subsystems 122‧‧‧Electronics Column/Beam Detection Subsystem 124‧‧‧Computer Subsystem 126‧‧‧Electron Beam Source 128‧‧‧Wafer 130‧‧‧Component 132‧‧‧Component 134‧‧‧Detector 300‧‧‧mask Stack Map 302‧‧‧Reticle Stack Map 304‧‧‧Defect 306‧‧‧Defect 308‧‧‧Repeated Defect Search Area 310‧‧‧Repeated Defect Search Area 400‧‧‧Wafer 402‧‧‧Reticle Item 404‧‧‧Reticle Item 500‧‧‧Wafer 502‧‧‧Reticle Instance 504‧‧‧Select Alignment Target Step 506‧‧‧Scan Zone 508‧‧‧Save Read Alignment Target Step 510‧‧‧ Stored Target Information 600‧‧‧Wafer 602‧‧‧Reticle Item 604‧‧‧Sweep Band 606‧‧‧Target 608‧‧‧Reticle Instance 610‧‧‧Scanning Band 612‧‧‧Alignment Step 614‧‧‧Coordinates Transformation Step 700‧‧‧Wafer 702‧‧‧Reticule Instance 704‧‧‧Select Alignment Target Step 706‧‧‧Scanning Band 708‧‧‧Save Alignment Target Position Step 710‧‧‧ Stored Target Location Information 800‧‧‧Wafer 802‧‧‧Reticule Instance 804‧‧‧Scan Strip 806‧‧‧Stored Location Information 808‧‧‧Reticle Instance 810‧‧‧Scan Strip 812‧‧ ‧Imaging Target Location Step 814‧‧‧Aligning Step 816‧‧‧Transforming Coordinates Step 900‧‧‧Non-transitory Computer-readable Media 902‧‧‧Program Instructions 904‧‧‧Computer System

Other objects and advantages of the present invention will become apparent upon reading the following detailed description and reference to the accompanying drawings, in which: Figures 1 and 2 are schematic diagrams illustrating side views of embodiments of a system configured as described herein ; FIG. 3 is a schematic diagram of a photomask stacking diagram showing an example of different repetitive defect detection results for defects, and the defect location of these defects is determined with different defect position accuracy; FIG. 4 is printed on a An example of an instance of an on-wafer reticle and an embodiment of defect coordinate translation of an individual instance of a reticle printed on a wafer to a first instance of a reticle printed on a wafer A schematic diagram of a plan view of FIG. 5 and FIG. 7 are an example of an instance of a reticle printed on a wafer and alignment in a plurality of scan strips that select one of the instances of the reticle Figures 6 and 8 illustrate one example of an example of a reticle printed on a wafer and will be directed to detection on a wafer. The swept coordinates of the detected defect report are transformed from the swept coordinates of the instance of the reticle in which the defects were detected to the swept coordinates of the first of the instances of the reticle printed on the wafer and FIG. 9 depicts one of a non-transitory computer-readable medium storing program instructions executable on a computer system to perform one or more of the computer-implemented methods described herein A block diagram of an embodiment of the item. While the invention is susceptible to various modifications and alternative forms, specific embodiments of the invention are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the drawings and detailed description thereof are not intended to limit the invention to the particular form disclosed, but on the contrary, it is intended to cover the spirit of the invention as defined by the scope of the appended claims and All modifications, equivalents and alternatives within the scope.

300‧‧‧mask stacking diagram

302‧‧‧mask stacking

304‧‧‧Defects

306‧‧‧Defects

308‧‧‧Duplicate defect search area

310‧‧‧Duplicate defect search area

Claims (54)

A system configured to transform the location of detected defects on a wafer, comprising: an inspection subsystem including at least one energy source and a detector, wherein the energy source is configured to generate a guide to Energy of a wafer, wherein the detector is configured to detect energy from the wafer and generate an output in response to the detected energy, wherein the output includes each of a plurality of dies on the wafer a plurality of scan strips of a frame of the output of which each of a plurality of instances of a reticle printed on the wafer includes at least two instances of the plurality of dies; and one or more Computer subsystems, etc. configured to: detect defects on the wafer by applying a defect detection method to the output generated by the detector, wherein scanning by the defect detection method reporting the location of the defects with coordinates; aligning the scans in the first one of the plurality of dies in the first one of the plurality of instances of the reticle printed on the wafer the output of the first of the frames in a first of a strip and the corresponding other of the dies in the other of the instances of the reticle printed on the wafer the output of the corresponding ones of the frames in the other, based on the output of the plurality of swaths in the one; The difference between the swept coordinates of the output of the first of the frames, respectively, determines the different swept coordinates of each of the frames of the other of the multiple instances of the reticle offset; and applying one of the different swath coordinate offsets for detection on the wafer the scanband coordinates of the defect reports, wherein which of the different scanband coordinates is offset is determined based on the other of the multiple instances of the reticle in which the defects are detected is applied to the swept coordinates for the defect reports, whereby the swept coordinates for the defect reports are transformed from the swept coordinates of the other ones of the instances of the reticle to Sweep zone coordinates in the first of the plurality of instances of the reticle. The system of claim 1, wherein the one or more computer subsystems are further configured to perform the aligning, the determining, and the applying without design information for devices formed on the wafer. The system of claim 1, wherein the one or more computer subsystems are not configured to perform any steps using design information of devices formed on the wafer. The system of claim 1, wherein the one or more computer subsystems are further configured to determine whether the defects are repetitive defects based on the transformed scanband coordinates of the defects. The system of claim 1, wherein the one or more computer subsystems are further configured to determine whether the defects on the wafer are used for patterning features based on the transformed scanband coordinates of the defects Caused by the reticle printed on the wafer. The system of claim 1, wherein the one or more computer subsystems are further configured to determine whether the defects on the wafer are used for processing the defects based on the transformed scanband coordinates of the defects Patterned features are printed on the reticle on the wafer, and wherein the reticle is an EUV reticle. The system of claim 1, wherein the output of the first of the frames used in the aligning step is the output of an alignment target of the first of the frames, wherein in the aligning step The output of the corresponding others of the frames used in the alignment step is the output of the alignment sites in the corresponding others of the frames, wherein the one or more computer subsystems are further processed by configuring to select alignment targets in the frames in the first of the plurality of swaths in the first of the plurality of instances of the reticle, and wherein the alignments are selected Aiming includes selecting at least one of the alignment targets in each of the frames in the first of the scanbands in the first of the instances of the reticle . The system of claim 1, wherein the output of the first of the frames used in the aligning step is the output of an alignment target of the first of the frames, wherein in the aligning step the output of the corresponding other of the frames used in the alignment step is the output of the alignment site in the corresponding other of the frame, and wherein the one or more computer subsystems further configured to: select alignment targets in the frames in the swaths in the first of the instances of the reticle; locate the alignment targets therein based on the alignment targets a plurality of scan zones separating the selected alignment targets into groups such that each of the groups corresponds to less than all of the plurality of scan zones; and based on which of the different portions of the one or more computer subsystems part of performing the detection, the alignment, the determination and the application separately for different ones of the groups and storing the information of the selected alignment targets in the groups to the one or more computer subsystems in these various parts. The system of claim 1, wherein the output of the first of the frames used in the aligning step is the output of an alignment target of the first of the frames, wherein in the aligning step the output of the corresponding others of the frames used in the aligning step is the output of the alignment sites in the corresponding others of the frames, and wherein the one or more computer subsystems further is configured to be generated by the detector for the wafer when the detection subsystem directs the generated energy to the wafer and the detector detects the energy from the wafer for an inspection scan The output selects alignment targets in the frames in the scan bands in the first of the instances of the reticle. The system of claim 1, wherein the output of the first of the frames used in the aligning step is the output of an alignment target of the first of the frames, wherein in the aligning step the output of the corresponding others of the frames used in the aligning step is the output of the alignment sites in the corresponding others of the frames, and wherein the one or more computer subsystems further configured to: set up a scan of one of the instances of the reticle performed before the detector of the inspection subsystem generates the output for detecting the defects on the wafer , the alignment targets in the frames in the plurality of swaths in the only one of the plurality of instances of the reticle are selected from the output generated by the detector for the wafer; a data structure of the selected targeting information; and storing the data structure in a non-transitory computer-readable storage medium. The system of claim 1, wherein the output of the first of the frames used in the aligning step is the output of an alignment target of the first of the frames, wherein in the aligning step the output of the corresponding others of the frames used in the aligning step is the output of the alignment sites in the corresponding others of the frames, and wherein the one or more computer subsystems further configured With: in a setup scan of one of the multiple instances of the reticle performed before the detector of the inspection subsystem generates the output for detecting the defects on the wafer, free The detector selects alignment targets in the frames in the swaths of the only one of the instances of the reticle for the wafer-generated output; the generation contains only the selecting a data structure of the location information of the aiming target; and storing the data structure in a non-transitory computer-readable storage medium. The system of claim 11, wherein the one or more computer subsystems are further configured to obtain the number of instances of the reticle by the detector during detection of the wafer based on only the position information The selected one of the targeting targets produces the output. The system of claim 12, wherein the one or more computer subsystems are further configured to: separate the selected alignment targets into groups based on the plurality of scan zones in which the alignment targets are positioned such that each of the groups corresponds to less than all of the plurality of scanbands; and the detection, the pair are performed for different ones of the groups based on which of the different portions of the one or more computer subsystems are performed, respectively storing the acquired outputs of the selected targeting targets in the groups in the different portions of the one or more computer subsystems using the criteria, the determinations, and the application. The system of claim 1, wherein the alignment comprises a target-based alignment of the output of the first of the frames and the output of the corresponding others of the frames. The system of claim 1, wherein the alignment comprises a feature-based alignment of the output of the first of the frames and the output of the corresponding other of the frames. The system of claim 1, wherein the alignment comprises a normalized cross-correlation based alignment of the output of the first of the frames and the output of the corresponding other of the frames. The system of claim 1, wherein the alignment comprises a fast Fourier transform-based alignment of the output of the first of the frames and the output of the corresponding other of the frames. The system of claim 1, wherein the alignment comprises a variance sum-based alignment of the output of the first of the frames and the output of the corresponding other of the frames. The system of claim 1, wherein the one or more computer subsystems are not configured to determine the location of the defects relative to the wafer. The system of claim 1, wherein the one or more computer subsystems are further configured for one of the frames in the plurality of scan bands in the first of the plurality of instances of the reticle The others repeat the alignment, the determination, and the application. The system of claim 1, wherein the energy directed to the wafer comprises light, and wherein the energy detected from the wafer comprises light. The system of claim 1, wherein the energy directed to the wafer comprises electrons, and wherein the energy detected from the wafer comprises electrons. A non-transitory computer-readable medium storing program instructions executable on a computer system to perform a computer-implemented method for transforming the location of defects detected on a wafer, wherein the computer-implemented method includes : detecting defects on a wafer by applying a defect detection method to the output generated by a detector of an inspection subsystem for the wafer, wherein the belt coordinates are scanned by the defect detection method reporting the location of the defects, wherein the inspection subsystem includes at least one energy source and the detector, wherein the energy source is configured to generate energy directed to the wafer, wherein the detector is configured to detect an energy source from The energy of the wafer and in response to the detected energy produces the output, and wherein the output includes a plurality of scan bands of a frame of output for each of a plurality of dies on the wafer, and wherein the output is printed on Each of a plurality of instances of a reticle on the wafer includes at least two instances of the plurality of dies; alignment with one of the instances of the reticle printed on the wafer The output of a first of the frames in a first of a first of the plurality of scan strips in a first of the plurality of dies and the light printed on the wafer the output of the corresponding other of the frames in the corresponding other of the plurality of swept strips in the corresponding other of the plurality of dies in the other of the plurality of instances of the mask; based on the figures The difference between the swept coordinates of the output of the frame and the swept coordinates of the output of the first of the frames with which they were aligned in the alignment step, respectively determines the plurality of different swept coordinate offsets for each of the frames in the other of the instances; and applying one of the different swept coordinate offsets for the detected on the wafer the scanband coordinates of the defect reports, wherein determining which of the different scanband coordinate offsets applies is based on the other of the multiple instances of the reticle in which the defects are detected at the swept coordinates for the defect reports, thereby transforming the swept coordinates for the defect reports from swept coordinates in the other of the instances of the reticle to the Sweep zone coordinates in the first of the plurality of instances of the reticle. A computer-implemented method for translating the location of detected defects on a wafer, comprising: by applying a defect detection method to a defect detection method generated for a wafer by a detector of an inspection subsystem output to detect defects on the wafer, wherein the location of the defects is reported by the defect detection method with scanband coordinates, wherein the detection subsystem includes at least one energy source and the detector, wherein the energy source is processed by a set of state to generate energy directed to the wafer, wherein the detector is configured to detect energy from the wafer and generate the output in response to the detected energy, and wherein the output includes on the wafer a plurality of scan bands of a frame of output of each of the plurality of dies, and wherein each of the plurality of instances of a reticle printed on the wafer includes at least two instances of the plurality of dies item; in a first of a first of a first of the plurality of dice in a first of one of the plurality of instances of the reticle printed on the wafer The output of the first of the frames and the scans in the corresponding other of the dies in the other of the instances of the reticle printed on the wafer the output of the frames corresponding to the others in the belt; the scan belt coordinates based on the output of the frames and the first of the frames aligned with them in the alignment step The difference between the swept coordinates of the output of one determines the offset of the swept coordinates of each of the frames in the other of the plurality of instances of the reticle, respectively; and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects detected on the wafer based on the reticle in which the defects were detected The other ones of the multiple instances determine which of the different swath coordinate offsets apply to the swath coordinates reported for the defects, thereby changing the swaths reported for the defects Coordinates are transformed from swept-zone coordinates in the other ones of the plurality of instances of the reticle to swept-zone coordinates in the first of the plurality of instances of the reticle, and wherein by coupling to the reticle One or more computer subsystems of the detection subsystem perform the detection, the alignment, the determination and the application. A system configured to transform the location of detected defects on a wafer, comprising: an inspection subsystem including at least one energy source and a detector, wherein the energy source is configured to generate a guide to Energy of a wafer, wherein the detector is configured to detect energy from the wafer and generate an output in response to the detected energy, and wherein the output includes a reticle printed on the wafer a plurality of scan bands of the frame of the output of each of the plurality of instances; and one or more computer subsystems configured to: by applying a defect detection method to the detector by the detector The output is generated to detect defects on the wafer, wherein the location of the defects is reported with scan strip coordinates by the defect detection method; aligning one of a set of scan strips in a set of reticle instances the output of the set frame and the output of the frames corresponding to the set frame of the plurality of scan strips corresponding to the plurality of the reticle printed on the wafer The set swath in the example; the swept coordinates of the output based on the frames are aligned with them in the alignment step the difference between the swept coordinates of the output of the set frame, respectively determine the different swept coordinate offsets of each of the frames in the plurality of instances of the reticle; and the differences one of the swath coordinate offsets applied to the swath coordinates reported for the defects detected on the wafer based on the instances of the reticle in which the defects were detected Determining which of the different swath coordinate offsets to apply to the swath coordinates for the defect reports, thereby converting the swath coordinates for the defect reports from the plurality of the reticle The swept coordinates in the instance are transformed to the swept coordinates in the set mask instance. The system of claim 25, wherein the set reticle instance is selected from the plurality of instances of the reticle printed on the wafer, and wherein the set reticle instance is detected by the detector in an inspection scan The system scans first. The system of claim 25, wherein the set reticle instance is selected from all of the plurality of instances of the reticle printed on the wafer. The system of claim 25, wherein the set reticle instance is selected from the plurality of instances of the reticle printed on the wafer, and wherein the set reticle instance is not inspected by the inspection scan The subsystem scans first. The system of claim 25, wherein each of the plurality of instances of the reticle printed on the wafer includes at least two instances of the plurality of dies, and wherein the aligning comprises aligning the set light the output of the set frame in the set scan band in a set die in the mask instance and corresponding to the plurality of the output of the frames of the set frame in the scan strip, the scan strips corresponding to the set scan strip in the plurality of dies corresponding to the dies printed on the wafer the setting die in the multiple instances of the reticle. The system of claim 25, wherein the set reticle instance is printed on a different wafer. The system of claim 30, wherein the defect detection method comprises comparing the output generated by the detector of the wafer with the output generated by the set reticle instance aligned to the wafer for use in Wafer-to-wafer inspection. The system of claim 25, wherein the one or more computer subsystems are further configured to perform the aligning, the determining, and the applying without design information for devices formed on the wafer. The system of claim 25, wherein the one or more computer subsystems are not configured to perform any steps using design information of devices formed on the wafer. The system of claim 25, wherein the one or more computer subsystems are further configured to determine whether the defects are repetitive defects based on the transformed scanband coordinates of the defects. The system of claim 25, wherein the one or more computer subsystems are further configured to determine whether the defects on the wafer are used for The reticle prints patterned features on the wafer. The system of claim 25, wherein the one or more computer subsystems are further configured to determine whether the defects on the wafer are used for patterning features based on the transformed scanband coordinates of the defects The mask is printed on the wafer, and wherein the mask is an EUV mask. The system of claim 25, wherein the output of the setting frame used in the aligning step is the output of an alignment target in the setting frame, wherein the setting used in the aligning step corresponds to the setting The outputs of the frames of the frame correspond to the outputs of the alignment points of the frames of the set frame, wherein the one or more computer subsystems are further configured to select the set reticle instance The alignment target in the setting frame in the setting scan band in the item, and wherein the selecting the alignment target comprises: selecting one of the setting frames in the setting scan zone in the setting mask instance item. At least one of the targeting targets in each. The system of claim 25, wherein the output of the setting frame used in the aligning step is the output of an alignment target in the setting frame, wherein the setting used in the aligning step corresponds to the setting The outputs of the frames of the frame are corresponding to the outputs of the alignment points of the frames of the setting frame, and wherein the one or more computer subsystems are further configured to: select the setting light Alignment targets in the set frame in the set scan band in the mask instance; separate the selected alignment targets into groups based on the set scan strips in which the alignment targets are positioned, such that the groups each of the groups corresponds to less than all of the set scanbands; and the detection, the pair are performed based on which of the different parts of the one or more computer subsystems, respectively storing the information of the selected targeting targets in the groups in the different parts of the one or more computer subsystems based on the criteria, the determination and the application. The system of claim 25, wherein the set reticle instance is selected from the plurality of instances of the reticle printed on the wafer, wherein the output of the set frame used in the alignment step is An output of an alignment target in the setting frame, wherein the output corresponding to the frames of the setting frame used in the aligning step is the pair of frames corresponding to the setting frame an output of a level point, and wherein the one or more computer subsystems are further configured to direct the generated energy to the wafer at the detection subsystem and the detector to detect the energy from the wafer To perform an inspection scan, the alignment target in the set frame in the set scan strip in the set reticle instance is selected from the output generated by the detector for the wafer. The system of claim 25, wherein the set reticle instance is selected from the plurality of instances of the reticle printed on the wafer, wherein the output of the set frame used in the alignment step is An output of an alignment target in the setting frame, wherein the output corresponding to the frames of the setting frame used in the aligning step is the pair of frames corresponding to the setting frame an output of level spots, and wherein the one or more computer subsystems are further configured to: execute before the detector of the inspection subsystem generates the output for detecting the defects on the wafer In a setup scan of only one of the setup reticle instances, the alignment target in the setup frame in the setup scan strip in the setup reticle instance is selected from the output generated by the detector for the wafer; resulting in a data structure containing information on the selected targeting targets; and storing the data structure in a non-transitory computer-readable storage medium. The system of claim 25, wherein the set reticle instance is selected from the plurality of instances of the reticle printed on the wafer, wherein the output of the set frame used in the alignment step is An output of an alignment target in the setting frame, wherein the output corresponding to the frames of the setting frame used in the aligning step is the pair of frames corresponding to the setting frame an output of level spots, and wherein the one or more computer subsystems are further configured to: execute before the detector of the inspection subsystem generates the output for detecting the defects on the wafer In a setup scan of only one of the setup reticle instances, the alignment target in the setup frame in the setup scan strip in the setup reticle instance is selected from the output generated by the detector for the wafer; resulting in a data structure containing only the location information of the selected targeting targets; and storing the data structure in a non-transitory computer-readable storage medium. The system of claim 41, wherein the one or more computer subsystems are further configured to obtain the selected ones for the set mask instance by the detector during detection of the wafer based on only the position information This output is produced by aiming at the target. The system of claim 42, wherein the one or more computer subsystems are further configured to: separate the selected alignment targets into groups based on the set scan zone in which the alignment targets are positioned such that the alignment targets each of the groups corresponds to less than all of the set scanbands; and the detection, the alignment, The determination and the application of the acquired outputs of the selected targeting targets in the groups are stored in the different portions of the one or more computer subsystems. The system of claim 25, wherein the aligning includes the output of the set frame and the corresponding to Target-based alignment of the output of the frames of the set frame in the instances of the reticle printed on the wafer. The system of claim 25, wherein the alignment includes the output of the set frame in the set reticle instance and the set corresponding to the multiple instances of the reticle printed on the wafer Feature-based alignment of the output of the frames of frames. The system of claim 25, wherein the alignment includes the output of the set frame in the set reticle instance and the set corresponding to the multiple instances of the reticle printed on the wafer Normalized cross correlation-based alignment of the outputs of the frames of frames. The system of claim 25, wherein the alignment includes the output of the set frame in the set reticle instance and the set corresponding to the multiple instances of the reticle printed on the wafer Fast Fourier Transform based alignment of the outputs of the frames of frames. The system of claim 25, wherein the alignment includes the output of the set frame in the set reticle instance and the set corresponding to the multiple instances of the reticle printed on the wafer Sum of squared difference-based alignment of the outputs of the frames of frames. The system of claim 25, wherein the one or more computer subsystems are not configured to determine the location of the defects relative to the wafer. The system of claim 25, wherein the one or more computer subsystems are further configured to repeat the alignment, the determining, and the applying for other setup frames in the setup scan band in the setup reticle instance. The system of claim 25, wherein the energy directed to the wafer comprises light, and wherein the energy detected from the wafer comprises light. The system of claim 25, wherein the energy directed to the wafer comprises electrons, and wherein the energy detected from the wafer comprises electrons. A non-transitory computer-readable medium storing program instructions executable on a computer system to perform a computer-implemented method for transforming the location of defects detected on a wafer, wherein the computer-implemented method includes : detecting defects on a wafer by applying a defect detection method to the output generated by a detector of an inspection subsystem for the wafer, wherein the belt coordinates are scanned by the defect detection method reporting the location of the defects, wherein the inspection subsystem includes at least one energy source and the detector, wherein the energy source is configured to generate energy directed to the wafer, wherein the detector is configured to detect an energy source from The energy of the wafer and in response to the detected energy produces the output, and wherein the output comprises scans of a frame of output of each of instances of a reticle printed on the wafer strip; align the output of a set frame in a set scan strip in a set mask instance with the output of the frames corresponding to the set frame in the plurality of scan strips, the multiple scanband corresponding to the set swath in the instances of the reticle printed on the wafer; the swath coordinates of the output based on the frames and the set aligned with it in the alignment step The difference between the swept coordinates of the output of the frame, respectively determine the offset of the different swept coordinates of each of the frames in the plurality of instances of the reticle; and the different swept coordinates One of the offsets is applied to the swept-belt coordinates reported for the defects detected on the wafer, wherein the determination of the which of the different swath coordinate offsets is applied to the swath coordinates for the defect reports, whereby the swept coordinates for the defect reports are taken from the instances of the reticle The swept coordinates of are transformed to the swept coordinates of the set mask instance. A computer-implemented method for transforming the location of detected defects on a wafer, comprising: by applying a defect detection method to a defect detection method generated for a wafer by a detector of an inspection subsystem output to detect defects on the wafer, wherein the location of the defects is reported by the defect detection method with scanband coordinates, wherein the detection subsystem includes at least one energy source and the detector, wherein the energy source is processed by a set of state to generate energy directed to the wafer, wherein the detector is configured to detect energy from the wafer and generate the output in response to the detected energy, and wherein the output includes printing on the wafer A plurality of scan strips of the frame of the output of each of the multiple instances of a reticle on the circle; the output of a set frame in a set scan strip in a set mask instance is aligned with the corresponding the output to the frames of the set frame in the scan strips corresponding to the set scan strip in the instances of the reticle printed on the wafer ; Based on the difference between the swept coordinates of the output of the frames and the swept coordinates of the output of the set frame with which they were aligned during the alignment step, the multiple instances of the reticle are respectively determined different scanband coordinate offsets for each of the frames in; and applying one of the different scanband coordinate offsets to the scans for the defect reports detected on the wafer belt coordinates, wherein determining which of the different belt coordinate offsets is applied to the belt coordinates reported for the defects is based on the instances of the reticle in which the defects are detected, Thereby, the swept coordinates reported for the defects are transformed from swept coordinates in the plurality of instances of the reticle to swept coordinates in the set reticle instance, and wherein the detection, the Alignment, the determination, and the application are performed by one or more computer subsystems coupled to the detection subsystem.

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