IL289609A - High accuracy of relative defect locations for repeater analysis - Google Patents

High accuracy of relative defect locations for repeater analysis

Info

Publication number
IL289609A
IL289609A IL289609A IL28960922A IL289609A IL 289609 A IL289609 A IL 289609A IL 289609 A IL289609 A IL 289609A IL 28960922 A IL28960922 A IL 28960922A IL 289609 A IL289609 A IL 289609A
Authority
IL
Israel
Prior art keywords
high accuracy
defect locations
repeater analysis
relative defect
relative
Prior art date
Application number
IL289609A
Other languages
Hebrew (he)
Other versions
IL289609B (en
Original Assignee
Kla Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/939,278 external-priority patent/US10365232B2/en
Application filed by Kla Corp filed Critical Kla Corp
Publication of IL289609A publication Critical patent/IL289609A/en
Publication of IL289609B publication Critical patent/IL289609B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/30—Computing systems specially adapted for manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
IL289609A 2017-05-15 2018-05-14 High accuracy of relative defect locations for repeater analysis IL289609B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IN201741016995 2017-05-15
US201762520893P 2017-06-16 2017-06-16
US15/939,278 US10365232B2 (en) 2017-05-15 2018-03-29 High accuracy of relative defect locations for repeater analysis
PCT/US2018/032587 WO2018213195A1 (en) 2017-05-15 2018-05-14 High accuracy of relative defect locations for repeater analysis

Publications (2)

Publication Number Publication Date
IL289609A true IL289609A (en) 2022-03-01
IL289609B IL289609B (en) 2022-09-01

Family

ID=66213394

Family Applications (2)

Application Number Title Priority Date Filing Date
IL289609A IL289609B (en) 2017-05-15 2018-05-14 High accuracy of relative defect locations for repeater analysis
IL270617A IL270617B (en) 2017-05-15 2019-11-13 High accuracy of relative defect locations for repeater analysis

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL270617A IL270617B (en) 2017-05-15 2019-11-13 High accuracy of relative defect locations for repeater analysis

Country Status (4)

Country Link
KR (1) KR102347052B1 (en)
CN (1) CN110637356B (en)
IL (2) IL289609B (en)
TW (1) TWI751329B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7203678B2 (en) * 2019-04-19 2023-01-13 株式会社日立ハイテク Defect observation device
CN111737107B (en) * 2020-05-15 2021-10-26 南京航空航天大学 Repeated defect report detection method based on heterogeneous information network

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7729529B2 (en) * 2004-12-07 2010-06-01 Kla-Tencor Technologies Corp. Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US9087367B2 (en) * 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US9377416B2 (en) * 2014-05-17 2016-06-28 Kla-Tencor Corp. Wafer edge detection and inspection
US9766186B2 (en) * 2014-08-27 2017-09-19 Kla-Tencor Corp. Array mode repeater detection
US10012599B2 (en) * 2015-04-03 2018-07-03 Kla-Tencor Corp. Optical die to database inspection
US9754761B2 (en) * 2015-05-26 2017-09-05 Kla-Tencor Corporation High-speed hotspot or defect imaging with a charged particle beam system

Also Published As

Publication number Publication date
KR20190142418A (en) 2019-12-26
CN110637356B (en) 2023-06-20
TWI751329B (en) 2022-01-01
CN110637356A (en) 2019-12-31
TW201907152A (en) 2019-02-16
IL289609B (en) 2022-09-01
KR102347052B1 (en) 2022-01-03
IL270617B (en) 2022-02-01

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