IL289609A - דיוק גבוה של מיקומי פגם יחסיים עבור בדיקת משחזר - Google Patents
דיוק גבוה של מיקומי פגם יחסיים עבור בדיקת משחזרInfo
- Publication number
- IL289609A IL289609A IL289609A IL28960922A IL289609A IL 289609 A IL289609 A IL 289609A IL 289609 A IL289609 A IL 289609A IL 28960922 A IL28960922 A IL 28960922A IL 289609 A IL289609 A IL 289609A
- Authority
- IL
- Israel
- Prior art keywords
- high accuracy
- defect locations
- relative defect
- repeater
- testing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- H10P74/23—
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- H10P74/203—
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8854—Grading and classifying of flaws
- G01N2021/8861—Determining coordinates of flaws
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
Landscapes
- Immunology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN201741016995 | 2017-05-15 | ||
| US201762520893P | 2017-06-16 | 2017-06-16 | |
| US15/939,278 US10365232B2 (en) | 2017-05-15 | 2018-03-29 | High accuracy of relative defect locations for repeater analysis |
| PCT/US2018/032587 WO2018213195A1 (en) | 2017-05-15 | 2018-05-14 | High accuracy of relative defect locations for repeater analysis |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL289609A true IL289609A (he) | 2022-03-01 |
| IL289609B IL289609B (he) | 2022-09-01 |
Family
ID=66213394
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL289609A IL289609B (he) | 2017-05-15 | 2018-05-14 | דיוק גבוה של מיקומי פגם יחסיים עבור בדיקת משחזר |
| IL270617A IL270617B (he) | 2017-05-15 | 2019-11-13 | דיוק גבוה של מיקומי פגם יחסיים עבור בדיקת משחזר |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL270617A IL270617B (he) | 2017-05-15 | 2019-11-13 | דיוק גבוה של מיקומי פגם יחסיים עבור בדיקת משחזר |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR102347052B1 (he) |
| CN (1) | CN110637356B (he) |
| IL (2) | IL289609B (he) |
| TW (1) | TWI751329B (he) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7203678B2 (ja) * | 2019-04-19 | 2023-01-13 | 株式会社日立ハイテク | 欠陥観察装置 |
| CN111737107B (zh) * | 2020-05-15 | 2021-10-26 | 南京航空航天大学 | 一种基于异质信息网络的重复缺陷报告检测方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7729529B2 (en) * | 2004-12-07 | 2010-06-01 | Kla-Tencor Technologies Corp. | Computer-implemented methods for detecting and/or sorting defects in a design pattern of a reticle |
| US8213704B2 (en) * | 2007-05-09 | 2012-07-03 | Kla-Tencor Corp. | Methods and systems for detecting defects in a reticle design pattern |
| US9087367B2 (en) * | 2011-09-13 | 2015-07-21 | Kla-Tencor Corp. | Determining design coordinates for wafer defects |
| US9377416B2 (en) * | 2014-05-17 | 2016-06-28 | Kla-Tencor Corp. | Wafer edge detection and inspection |
| US9766186B2 (en) * | 2014-08-27 | 2017-09-19 | Kla-Tencor Corp. | Array mode repeater detection |
| US10012599B2 (en) * | 2015-04-03 | 2018-07-03 | Kla-Tencor Corp. | Optical die to database inspection |
| US9754761B2 (en) * | 2015-05-26 | 2017-09-05 | Kla-Tencor Corporation | High-speed hotspot or defect imaging with a charged particle beam system |
-
2018
- 2018-04-25 TW TW107114041A patent/TWI751329B/zh active
- 2018-05-14 IL IL289609A patent/IL289609B/he unknown
- 2018-05-14 CN CN201880032683.5A patent/CN110637356B/zh active Active
- 2018-05-14 KR KR1020197036847A patent/KR102347052B1/ko active Active
-
2019
- 2019-11-13 IL IL270617A patent/IL270617B/he unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN110637356A (zh) | 2019-12-31 |
| KR20190142418A (ko) | 2019-12-26 |
| TW201907152A (zh) | 2019-02-16 |
| IL270617B (he) | 2022-02-01 |
| TWI751329B (zh) | 2022-01-01 |
| CN110637356B (zh) | 2023-06-20 |
| IL289609B (he) | 2022-09-01 |
| KR102347052B1 (ko) | 2022-01-03 |
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