SG10201901906YA - Atmospheric epitaxial deposition chamber - Google Patents
Atmospheric epitaxial deposition chamberInfo
- Publication number
- SG10201901906YA SG10201901906YA SG10201901906YA SG10201901906YA SG10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA SG 10201901906Y A SG10201901906Y A SG 10201901906YA
- Authority
- SG
- Singapore
- Prior art keywords
- epitaxial deposition
- assembly
- radiant energy
- deposition chamber
- liner
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462046559P | 2014-09-05 | 2014-09-05 | |
US201462046414P | 2014-09-05 | 2014-09-05 | |
US201462046400P | 2014-09-05 | 2014-09-05 | |
US201462046451P | 2014-09-05 | 2014-09-05 | |
US201462046377P | 2014-09-05 | 2014-09-05 | |
US14/584,441 US10760161B2 (en) | 2014-09-05 | 2014-12-29 | Inject insert for EPI chamber |
US14/826,065 US11060203B2 (en) | 2014-09-05 | 2015-08-13 | Liner for epi chamber |
US14/826,310 US20160071749A1 (en) | 2014-09-05 | 2015-08-14 | Upper dome for epi chamber |
US14/826,287 US20160068996A1 (en) | 2014-09-05 | 2015-08-14 | Susceptor and pre-heat ring for thermal processing of substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201901906YA true SG10201901906YA (en) | 2019-04-29 |
Family
ID=55440346
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201901906YA SG10201901906YA (en) | 2014-09-05 | 2015-09-02 | Atmospheric epitaxial deposition chamber |
SG11201701463XA SG11201701463XA (en) | 2014-09-05 | 2015-09-02 | Atmospheric epitaxial deposition chamber |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701463XA SG11201701463XA (en) | 2014-09-05 | 2015-09-02 | Atmospheric epitaxial deposition chamber |
Country Status (5)
Country | Link |
---|---|
KR (1) | KR20170048578A (zh) |
CN (1) | CN106715753B (zh) |
SG (2) | SG10201901906YA (zh) |
TW (1) | TWI673396B (zh) |
WO (1) | WO2016036868A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7384784B2 (ja) | 2017-08-11 | 2023-11-21 | アプライド マテリアルズ インコーポレイテッド | 熱化学気相堆積(cvd)における均一性を改善するための装置及び方法 |
JP7475337B2 (ja) * | 2018-09-28 | 2024-04-26 | アプライド マテリアルズ インコーポレイテッド | 動的水平化を備えた同軸リフト装置 |
CN111831022B (zh) * | 2019-04-18 | 2022-03-18 | 北京七星华创流量计有限公司 | 腔室压力控制方法及装置、半导体设备 |
KR102263006B1 (ko) * | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | 기판 처리 장치 |
US20220056583A1 (en) * | 2020-08-18 | 2022-02-24 | Globalwafers Co., Ltd. | Window for chemical vapor deposition systems and related methods |
KR102457294B1 (ko) * | 2020-09-15 | 2022-10-21 | 에스케이실트론 주식회사 | 돔 어셈블리 및 에피택셜 리액터 |
CN113278953B (zh) * | 2021-03-26 | 2022-06-17 | 华灿光电(苏州)有限公司 | 石墨基板 |
US20220352006A1 (en) * | 2021-04-30 | 2022-11-03 | Asm Ip Holding B.V. | Susceptors with film deposition control features |
CN115584553A (zh) * | 2022-11-04 | 2023-01-10 | 西安奕斯伟材料科技有限公司 | 预热环及晶圆外延生长设备 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5837058A (en) * | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
US6099648A (en) * | 1997-08-06 | 2000-08-08 | Applied Materials, Inc. | Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures |
US6143079A (en) * | 1998-11-19 | 2000-11-07 | Asm America, Inc. | Compact process chamber for improved process uniformity |
JP4841873B2 (ja) * | 2005-06-23 | 2011-12-21 | 大日本スクリーン製造株式会社 | 熱処理用サセプタおよび熱処理装置 |
TW200802552A (en) * | 2006-03-30 | 2008-01-01 | Sumco Techxiv Corp | Method of manufacturing epitaxial silicon wafer and apparatus thereof |
US20080017116A1 (en) * | 2006-07-18 | 2008-01-24 | Jeffrey Campbell | Substrate support with adjustable lift and rotation mount |
DE102008034260B4 (de) * | 2008-07-16 | 2014-06-26 | Siltronic Ag | Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD |
US9127360B2 (en) * | 2009-10-05 | 2015-09-08 | Applied Materials, Inc. | Epitaxial chamber with cross flow |
US8404048B2 (en) * | 2011-03-11 | 2013-03-26 | Applied Materials, Inc. | Off-angled heating of the underside of a substrate using a lamp assembly |
US20120270384A1 (en) * | 2011-04-22 | 2012-10-25 | Applied Materials, Inc. | Apparatus for deposition of materials on a substrate |
US9870919B2 (en) * | 2012-04-25 | 2018-01-16 | Applied Materials, Inc. | Process chamber having separate process gas and purge gas regions |
-
2015
- 2015-09-02 SG SG10201901906YA patent/SG10201901906YA/en unknown
- 2015-09-02 SG SG11201701463XA patent/SG11201701463XA/en unknown
- 2015-09-02 CN CN201580047552.0A patent/CN106715753B/zh active Active
- 2015-09-02 WO PCT/US2015/048167 patent/WO2016036868A1/en active Application Filing
- 2015-09-02 KR KR1020177009328A patent/KR20170048578A/ko not_active Application Discontinuation
- 2015-09-04 TW TW104129370A patent/TWI673396B/zh active
Also Published As
Publication number | Publication date |
---|---|
SG11201701463XA (en) | 2017-03-30 |
TW201617488A (zh) | 2016-05-16 |
KR20170048578A (ko) | 2017-05-08 |
TWI673396B (zh) | 2019-10-01 |
CN106715753A (zh) | 2017-05-24 |
CN106715753B (zh) | 2020-03-17 |
WO2016036868A1 (en) | 2016-03-10 |
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