SG10201901030TA - Insulation layer etchant composition and method of forming pattern using the same - Google Patents

Insulation layer etchant composition and method of forming pattern using the same

Info

Publication number
SG10201901030TA
SG10201901030TA SG10201901030TA SG10201901030TA SG10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA SG 10201901030T A SG10201901030T A SG 10201901030TA
Authority
SG
Singapore
Prior art keywords
silane compound
insulation layer
etchant composition
same
forming pattern
Prior art date
Application number
SG10201901030TA
Other languages
English (en)
Inventor
Eun Jung Lee
Han Young Choi
Byoung Mook Kim
Tae Hee Kim
Jeong Hwan Kim
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of SG10201901030TA publication Critical patent/SG10201901030TA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG10201901030TA 2018-02-13 2019-02-07 Insulation layer etchant composition and method of forming pattern using the same SG10201901030TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20180017450 2018-02-13
KR1020180138844A KR20190098030A (ko) 2018-02-13 2018-11-13 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법

Publications (1)

Publication Number Publication Date
SG10201901030TA true SG10201901030TA (en) 2019-09-27

Family

ID=67808091

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201901030TA SG10201901030TA (en) 2018-02-13 2019-02-07 Insulation layer etchant composition and method of forming pattern using the same

Country Status (2)

Country Link
KR (1) KR20190098030A (ko)
SG (1) SG10201901030TA (ko)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100823461B1 (ko) 2007-05-11 2008-04-21 테크노세미켐 주식회사 실리콘산화막 및 실리콘질화막 식각용 식각액 조성물

Also Published As

Publication number Publication date
KR20190098030A (ko) 2019-08-21

Similar Documents

Publication Publication Date Title
MY190927A (en) Method for preparing concrete superplasticizer having phosphorous acid group and use thereof
WO2012057467A3 (ko) 구리 함유 금속막 식각액 조성물 및 이를 이용한 식각 방법
MX2018006411A (es) Marca de agua impresa.
GB201223188D0 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
MY163201A (en) Silicon polishing compositions with improved psd performance
MY170621A (en) Additive for preparing suede on polycrystalline silicon chip and use method thereof
SG143125A1 (en) Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution
WO2011115371A3 (en) Etchant for metal wiring and method for manufacturing metal wiring using the same
CN110437837A (zh) 用于氮化硅的蚀刻组合物和使用其进行蚀刻的方法
DE602007006738D1 (de) Verfahren zur Herstellung eines Schlitzwellenleiters
MX2020008512A (es) Prevención o reducción del crecimiento vegetal por biocementación.
WO2012021026A3 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (1)
PH12015502356B1 (en) Nonionic surfactant and method for producing nonionic surfactant
TW201129497A (en) silicon substrate having nanostructures and method for producing the same and application thereof
TW200503101A (en) Method for producing trench isolation structure
MX2022003486A (es) Composiciones terapeuticas de ceramidasa acida y metodos para prepararlas y utilizarlas.
WO2008089733A3 (de) Ätzlösung und ätzverfahren
MX2022001881A (es) Aditivo multifuncional para uso en mantenimiento de pozos.
WO2012021025A3 (ko) 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (2)
WO2018084448A3 (ko) 모판, 모판의 제조 방법, 마스크의 제조 방법 및 oled 화소 증착 방법
SG10201901030TA (en) Insulation layer etchant composition and method of forming pattern using the same
EP2887386A3 (en) Method of etching
MY145842A (en) Method of producing triethanolamine
WO2017019675A8 (en) Hydroxide-catalyzed formation of silicon-oxygen bonds by dehydrogenative coupling of hydrosilanes and alcohols
WO2011020556A3 (de) Form- und/oder strukturteil aus aluminium oder einer aluminiumlegierung und verfahren zu deren oberflächenschutz