SG10201803162TA - Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas - Google Patents

Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

Info

Publication number
SG10201803162TA
SG10201803162TA SG10201803162TA SG10201803162TA SG10201803162TA SG 10201803162T A SG10201803162T A SG 10201803162TA SG 10201803162T A SG10201803162T A SG 10201803162TA SG 10201803162T A SG10201803162T A SG 10201803162TA SG 10201803162T A SG10201803162T A SG 10201803162TA
Authority
SG
Singapore
Prior art keywords
mole
oxide
molar concentration
concentration ranging
ceramic
Prior art date
Application number
SG10201803162TA
Inventor
Jennifer Y Sun
Ren-Guan Duan
Jie Yuan
Li Xu
Kenneth S Collins
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/796,211 external-priority patent/US7696117B2/en
Priority claimed from US11/796,210 external-priority patent/US20080264564A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201803162TA publication Critical patent/SG10201803162TA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Composite Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

APPARATUSAND METHOD WHICH REDUCE THE EROSION RATE OF SURFACES EXPOSED TO HALOGEN-CONTAINING PLASMAS [0092] OF THE DISCLOSURE 2 [0093] A ceramic article which is resistant to erosion by halogen-containing 3 plasmas used in semiconductor processing. The ceramic article includes ceramic which 4 is multi-phased, typically including two phases to three phases. In a first embodiment, 5 the ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 6 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from 7 about 10 mole % to about 30 mole %; and at least one other component, selected from the 8 group consisting of aluminum oxide, hafrtium oxide, scandium oxide, neodymium oxide, 9 niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and 10 combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 11 xnole%. In a second embodiment, the ceramic article includes ceramic which is formed 12 from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 13 mole % and zirconium oxide at a molar concentration ranging from about 10 mole % to 14 about 30 mole %,, wherein a mean grain size of said ceramic ranges from about 2 |im to 15 about 8 [im. In a third embodiment, the ceramic article includes ceramic which is formed 16 from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 17 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to 18 about 6 mole %. Figure 2C 32
SG10201803162TA 2007-04-27 2008-04-24 Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas SG10201803162TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/796,211 US7696117B2 (en) 2007-04-27 2007-04-27 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
US11/796,210 US20080264564A1 (en) 2007-04-27 2007-04-27 Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas

Publications (1)

Publication Number Publication Date
SG10201803162TA true SG10201803162TA (en) 2018-06-28

Family

ID=39691093

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201508616SA SG10201508616SA (en) 2007-04-27 2008-04-24 Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
SG10201803162TA SG10201803162TA (en) 2007-04-27 2008-04-24 Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
SG200803151-0A SG142320A1 (en) 2007-04-27 2008-04-24 Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201508616SA SG10201508616SA (en) 2007-04-27 2008-04-24 Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200803151-0A SG142320A1 (en) 2007-04-27 2008-04-24 Apparatus and method which reduce the erosion rate of surfaces exposed to halogen-containing plasmas

Country Status (6)

Country Link
EP (1) EP1988187A3 (en)
JP (7) JP4975676B2 (en)
KR (6) KR100917292B1 (en)
CN (1) CN103102157A (en)
SG (3) SG10201508616SA (en)
TW (11) TWI562205B (en)

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Also Published As

Publication number Publication date
JP2016155744A (en) 2016-09-01
JP2008273823A (en) 2008-11-13
JP5805545B2 (en) 2015-11-04
TW201934521A (en) 2019-09-01
TWI654158B (en) 2019-03-21
JP2019069891A (en) 2019-05-09
TWI695822B (en) 2020-06-11
KR20090032063A (en) 2009-03-31
KR20140037161A (en) 2014-03-26
JP2019069892A (en) 2019-05-09
JP2015212219A (en) 2015-11-26
TW200842944A (en) 2008-11-01
TW201140657A (en) 2011-11-16
TW201602051A (en) 2016-01-16
TW201503239A (en) 2015-01-16
CN103102157A (en) 2013-05-15
JP2017095350A (en) 2017-06-01
TWI744898B (en) 2021-11-01
TW201831430A (en) 2018-09-01
TWI483291B (en) 2015-05-01
TW201726580A (en) 2017-08-01
KR20080096340A (en) 2008-10-30
TW201831429A (en) 2018-09-01
TWI562205B (en) 2016-12-11
KR100917292B1 (en) 2009-09-11
TW202039400A (en) 2020-11-01
TWI654159B (en) 2019-03-21
KR101491568B1 (en) 2015-02-09
JP6314110B2 (en) 2018-04-18
TWI654160B (en) 2019-03-21
KR101365139B1 (en) 2014-02-20
EP1988187A3 (en) 2010-12-08
KR101428646B1 (en) 2014-08-13
JP2012116749A (en) 2012-06-21
KR20130008498A (en) 2013-01-22
TWI571452B (en) 2017-02-21
EP1988187A2 (en) 2008-11-05
KR101441865B1 (en) 2014-09-22
SG142320A1 (en) 2008-11-28
TWI628154B (en) 2018-07-01
TW201503238A (en) 2015-01-16
SG10201508616SA (en) 2015-11-27
TW201833058A (en) 2018-09-16
TWI567793B (en) 2017-01-21
JP4975676B2 (en) 2012-07-11
KR101456539B1 (en) 2014-10-31
KR20140100919A (en) 2014-08-18
KR20130114027A (en) 2013-10-16
JP6259844B2 (en) 2018-01-10
TWI351057B (en) 2011-10-21

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