SG10201607960VA - Stop-on silicon containing layer additive - Google Patents

Stop-on silicon containing layer additive

Info

Publication number
SG10201607960VA
SG10201607960VA SG10201607960VA SG10201607960VA SG10201607960VA SG 10201607960V A SG10201607960V A SG 10201607960VA SG 10201607960V A SG10201607960V A SG 10201607960VA SG 10201607960V A SG10201607960V A SG 10201607960VA SG 10201607960V A SG10201607960V A SG 10201607960VA
Authority
SG
Singapore
Prior art keywords
stop
containing layer
silicon containing
layer additive
additive
Prior art date
Application number
SG10201607960VA
Inventor
Stender Matthias
Gary Graham Maitland
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201607960VA publication Critical patent/SG10201607960VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
    • B24B13/01—Specific tools, e.g. bowl-like; Production, dressing or fastening of these tools
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2237—Oxides; Hydroxides of metals of titanium
    • C08K2003/2241—Titanium dioxide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2244—Oxides; Hydroxides of metals of zirconium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201607960VA 2015-09-25 2016-09-23 Stop-on silicon containing layer additive SG10201607960VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562233251P 2015-09-25 2015-09-25
US15/268,956 US10144850B2 (en) 2015-09-25 2016-09-19 Stop-on silicon containing layer additive

Publications (1)

Publication Number Publication Date
SG10201607960VA true SG10201607960VA (en) 2017-04-27

Family

ID=56990377

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201607960VA SG10201607960VA (en) 2015-09-25 2016-09-23 Stop-on silicon containing layer additive

Country Status (8)

Country Link
US (2) US10144850B2 (en)
EP (1) EP3153558B1 (en)
JP (2) JP6480394B2 (en)
KR (1) KR101954386B1 (en)
CN (1) CN106566412B (en)
IL (1) IL248020B (en)
SG (1) SG10201607960VA (en)
TW (2) TW201738341A (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive
KR20170044522A (en) * 2015-10-15 2017-04-25 삼성전자주식회사 Slurry composition for chemical mechanical polishing, method of preparing the same, and polishing method using the same
EP3475375B1 (en) * 2016-06-22 2023-11-15 CMC Materials, Inc. Polishing composition comprising an amine-containing surfactant
CN108117839B (en) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 Chemical mechanical polishing solution with high silicon nitride selectivity
US10377014B2 (en) * 2017-02-28 2019-08-13 Ecolab Usa Inc. Increased wetting of colloidal silica as a polishing slurry
CN109251671B (en) * 2017-07-13 2021-09-17 安集微电子科技（上海）股份有限公司 Chemical mechanical polishing solution
US11655394B2 (en) * 2017-08-09 2023-05-23 Resonac Corporation Polishing solution and polishing method
US10822524B2 (en) * 2017-12-14 2020-11-03 Rohm And Haas Electronic Materials Cmp Holdings, I Aqueous compositions of low dishing silica particles for polysilicon polishing
US10584266B2 (en) * 2018-03-14 2020-03-10 Cabot Microelectronics Corporation CMP compositions containing polymer complexes and agents for STI applications
EP3774647A4 (en) * 2018-03-28 2022-04-06 FUJIFILM Electronic Materials U.S.A, Inc. Bulk ruthenium chemical mechanical polishing composition
US11718767B2 (en) 2018-08-09 2023-08-08 Versum Materials Us, Llc Chemical mechanical planarization composition for polishing oxide materials and method of use thereof
US20200095502A1 (en) * 2018-09-26 2020-03-26 Versum Materials Us, Llc High Oxide VS Nitride Selectivity, Low And Uniform Oxide Trench Dishing In Shallow Trench Isolation(STI) Chemical Mechanical Planarization Polishing(CMP)
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
US10640681B1 (en) * 2018-10-20 2020-05-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for tungsten
US11180678B2 (en) * 2018-10-31 2021-11-23 Versum Materials Us, Llc Suppressing SiN removal rates and reducing oxide trench dishing for Shallow Trench Isolation (STI) process
CN109575818A (en) * 2018-12-28 2019-04-05 天津洙诺科技有限公司 A kind of low sodium polishing fluid and its preparation method and application
US11608451B2 (en) 2019-01-30 2023-03-21 Versum Materials Us, Llc Shallow trench isolation (STI) chemical mechanical planarization (CMP) polishing with tunable silicon oxide and silicon nitride removal rates
WO2020223029A1 (en) * 2019-04-29 2020-11-05 Versum Materials Us, Llc Selective chemical mechanical planarization polishing
KR102337949B1 (en) * 2019-07-10 2021-12-14 주식회사 케이씨텍 Chemical mechanical polishing slurry composition for mult film polishing and polishing method using the same
KR20210018607A (en) * 2019-08-06 2021-02-18 삼성디스플레이 주식회사 Polishing slurry, method for manufacturing a display device using the same and disple device
US11292938B2 (en) * 2019-09-11 2022-04-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of selective chemical mechanical polishing cobalt, zirconium oxide, poly-silicon and silicon dioxide films
KR20220066937A (en) * 2019-09-24 2022-05-24 버슘머트리얼즈 유에스, 엘엘씨 With-in die non-uniformity in planarization (WID-NU)
JP2022553244A (en) * 2019-10-15 2022-12-22 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド Polishing composition and method of use
KR102570805B1 (en) * 2019-11-01 2023-08-24 삼성에스디아이 주식회사 Cmp slurry composition for polishing tungsten pattern wafer and method for polishing tungsten pattern wafer using the same
EP4069794A4 (en) * 2019-12-04 2024-01-10 Versum Materials US, LLC High oxide film removal rate shallow trench isolation (sti) chemical mechanical planarization (cmp) polishing
EP4103663A4 (en) 2020-02-13 2023-08-23 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of use thereof
JP2022010758A (en) * 2020-06-29 2022-01-17 Ａｇｃ株式会社 Abrasive and polishing method
US11680186B2 (en) * 2020-11-06 2023-06-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions and methods of using same
US20220235247A1 (en) * 2021-01-26 2022-07-28 Cmc Materials, Inc. Composition and method for polishing boron doped polysilicon
JPWO2022168859A1 (en) 2021-02-04 2022-08-11
US20240199915A1 (en) * 2021-02-04 2024-06-20 Fujimi Incorporation Polishing composition
CN115365996A (en) * 2022-08-23 2022-11-22 福建省南安市宏炜新材料有限公司 Chemical mechanical polishing process of N-Si substrate

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922393A (en) 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
JPS6086187A (en) 1983-10-17 1985-05-15 Toshiba Ceramics Co Ltd Abrasive material for grinding semiconductor wafer
US4654315A (en) 1985-04-08 1987-03-31 Gte Products Corporation Low dielectric loss silicon nitride based material
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5104421B1 (en) * 1990-03-23 1993-11-16 Fujimi Abrasives Co.,Ltd. Polishing method of goods and abrasive pad therefor
US5935278A (en) * 1996-08-30 1999-08-10 Showa Denko Kabushiki Kaisha Abrasive composition for magnetic recording disc substrate
JPH11186202A (en) 1997-12-17 1999-07-09 Shin Etsu Handotai Co Ltd Abrasive for polishing semiconductor silicon wafer and method of polishing
JP2000256655A (en) 1999-03-04 2000-09-19 Hitachi Chem Co Ltd Cmp abrasive material and abrasion of substrate
WO2001044395A1 (en) * 1999-12-14 2001-06-21 Rodel Holdings, Inc. Polishing compositions for semiconductor substrates
US20020025762A1 (en) 2000-02-16 2002-02-28 Qiuliang Luo Biocides for polishing slurries
CA2607856C (en) * 2000-05-12 2009-10-20 Nissan Chemical Industries, Ltd. Polishing composition
US6454821B1 (en) * 2000-06-21 2002-09-24 Praxair S. T. Technology, Inc. Polishing composition and method
JP2002338232A (en) 2001-05-18 2002-11-27 Nippon Chem Ind Co Ltd Secondary flocculated colloidal silica, method for producing the same and abrasive composition using the same
CN100378145C (en) * 2001-06-21 2008-04-02 花王株式会社 Grinding liquid composition
JP4003116B2 (en) * 2001-11-28 2007-11-07 株式会社フジミインコーポレーテッド Polishing composition for magnetic disk substrate and polishing method using the same
DE10228116A1 (en) * 2002-06-24 2004-01-29 Sälzle, Erich, Dr. Process for polishing glass objects
US7553345B2 (en) * 2002-12-26 2009-06-30 Kao Corporation Polishing composition
JP4076852B2 (en) 2002-12-26 2008-04-16 花王株式会社 Micro waviness reducing agent
JP2004253775A (en) * 2003-01-31 2004-09-09 Nec Electronics Corp Chemical mechanical polishing method
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP4206313B2 (en) * 2003-08-08 2009-01-07 花王株式会社 Polishing liquid composition for magnetic disk
US6969555B2 (en) 2003-10-06 2005-11-29 General Electric Company Aluminate coating for a silicon containing substrate
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
JP4342918B2 (en) * 2003-11-28 2009-10-14 株式会社東芝 Polishing cloth and method for manufacturing semiconductor device
US7223697B2 (en) * 2004-07-23 2007-05-29 International Business Machines Corporation Chemical mechanical polishing method
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
US8038752B2 (en) * 2004-10-27 2011-10-18 Cabot Microelectronics Corporation Metal ion-containing CMP composition and method for using the same
EP1841831B1 (en) * 2005-01-24 2014-04-02 Showa Denko K.K. Polishing composition and polishing method
US7316977B2 (en) 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP4911961B2 (en) 2005-12-06 2012-04-04 日揮触媒化成株式会社 Method for producing anisotropic silica sol
EP1813656A3 (en) 2006-01-30 2009-09-02 FUJIFILM Corporation Metal-polishing liquid and chemical mechanical polishing method using the same
US20070176142A1 (en) 2006-01-31 2007-08-02 Fujifilm Corporation Metal- polishing liquid and chemical-mechanical polishing method using the same
JP4990543B2 (en) * 2006-03-23 2012-08-01 富士フイルム株式会社 Polishing liquid for metal
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
US8163049B2 (en) * 2006-04-18 2012-04-24 Dupont Air Products Nanomaterials Llc Fluoride-modified silica sols for chemical mechanical planarization
US20080149884A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
CN101220255B (en) * 2007-01-11 2010-06-30 长兴开发科技股份有限公司 Chemical mechanical grinding fluid and chemical mechanical planarization method
JP2008280229A (en) 2007-04-13 2008-11-20 Hitachi Chem Co Ltd Manufacturing process of surface-modified silicon dioxide particles and polishing liquid
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US9799532B2 (en) 2010-02-15 2017-10-24 Hitachi Chemical Company, Ltd. CMP polishing solution and polishing method
CN101831244A (en) * 2010-05-10 2010-09-15 上海高纳粉体技术有限公司 High-precision alumina polishing solution and preparation method thereof
US8288283B2 (en) * 2010-12-07 2012-10-16 Texas Instruments Incorporated Aluminum enhanced palladium CMP process
CN107093433B (en) * 2012-08-29 2018-10-16 Hoya株式会社 Glass substrate for disc and disk
SG10201706182XA (en) * 2012-09-28 2017-09-28 Hoya Corp Magnetic-disk glass substrate and magnetic disk
KR20160009644A (en) * 2013-05-15 2016-01-26 바스프 에스이 Use of chemical-mechanical polishing (cmp) composition for polishing substance or layer containing at least one iii-v material
JPWO2016043089A1 (en) 2014-09-16 2017-08-10 山口精研工業株式会社 Abrasive composition for sapphire substrate
US10144850B2 (en) * 2015-09-25 2018-12-04 Versum Materials Us, Llc Stop-on silicon containing layer additive

Also Published As

Publication number Publication date
CN106566412B (en) 2022-09-06
JP2017105980A (en) 2017-06-15
EP3153558B1 (en) 2018-03-21
EP3153558A1 (en) 2017-04-12
TW201714993A (en) 2017-05-01
CN106566412A (en) 2017-04-19
KR20170039574A (en) 2017-04-11
JP2019049008A (en) 2019-03-28
US20170088748A1 (en) 2017-03-30
TW201738341A (en) 2017-11-01
KR101954386B1 (en) 2019-03-05
US10144850B2 (en) 2018-12-04
IL248020B (en) 2021-09-30
IL248020A0 (en) 2016-11-30
TWI596175B (en) 2017-08-21
JP6480394B2 (en) 2019-03-06
US20190062598A1 (en) 2019-02-28

Similar Documents

Publication Publication Date Title
IL248020A0 (en) Stop-on silicon containing layer additive
HK1253915A1 (en) Composition for surface modification
IL247843A0 (en) Etching composition
HK1258445A1 (en) Functional composition for surface modification
GB201514977D0 (en) Additive layer manufacturing
SG10202009031VA (en) Intra-mould substrate
TWI560882B (en) Semiconductor structure
IL238369A0 (en) Azocarbonyl-functionalized silanes
GB201413695D0 (en) Compound
GB201412238D0 (en) Compound
TWM477045U (en) Package substrate
GB201520276D0 (en) Surface modification
GB201701519D0 (en) Substrate manufacture
GB201420531D0 (en) Semiconductor structure
GB201410317D0 (en) Substrate
SG11201801454QA (en) Substrate carrier
GB201407694D0 (en) Compound
GB2552508B (en) Substrate
TWI562256B (en) Substrate structure
GB201405657D0 (en) Additive carrying composition
GB201418709D0 (en) Compound
GB201413780D0 (en) Thin film semiconductor
GB201407693D0 (en) Compound
PL3359463T3 (en) Layer pad
GB201604342D0 (en) Substrate