SG10201601910WA - Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation - Google Patents
Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operationInfo
- Publication number
- SG10201601910WA SG10201601910WA SG10201601910WA SG10201601910WA SG10201601910WA SG 10201601910W A SG10201601910W A SG 10201601910WA SG 10201601910W A SG10201601910W A SG 10201601910WA SG 10201601910W A SG10201601910W A SG 10201601910WA SG 10201601910W A SG10201601910W A SG 10201601910WA
- Authority
- SG
- Singapore
- Prior art keywords
- edge
- trajectory control
- ion trajectory
- plasma operation
- wafer profile
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562191817P | 2015-07-13 | 2015-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201601910WA true SG10201601910WA (en) | 2017-02-27 |
Family
ID=57776368
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202107291WA SG10202107291WA (en) | 2015-07-13 | 2016-03-11 | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
| SG10201601910WA SG10201601910WA (en) | 2015-07-13 | 2016-03-11 | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202107291WA SG10202107291WA (en) | 2015-07-13 | 2016-03-11 | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10163610B2 (en) |
| JP (2) | JP6852974B2 (en) |
| KR (2) | KR102570642B1 (en) |
| CN (1) | CN106356274B (en) |
| SG (2) | SG10202107291WA (en) |
| TW (3) | TWI697951B (en) |
Families Citing this family (89)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| CN107078048B (en) | 2014-10-17 | 2021-08-13 | 应用材料公司 | CMP pad construction with composite material properties using additive manufacturing process |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| JP6346855B2 (en) * | 2014-12-25 | 2018-06-20 | 東京エレクトロン株式会社 | Electrostatic adsorption method and substrate processing apparatus |
| USD810705S1 (en) * | 2016-04-01 | 2018-02-20 | Veeco Instruments Inc. | Self-centering wafer carrier for chemical vapor deposition |
| KR101722382B1 (en) * | 2016-01-08 | 2017-04-03 | 주식회사 윈텔 | Plasma Processing Apparatus |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| US10685862B2 (en) * | 2016-01-22 | 2020-06-16 | Applied Materials, Inc. | Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device |
| KR20180099776A (en) | 2016-01-26 | 2018-09-05 | 어플라이드 머티어리얼스, 인코포레이티드 | Wafer edge ring lifting solution |
| US10204795B2 (en) | 2016-02-04 | 2019-02-12 | Applied Materials, Inc. | Flow distribution plate for surface fluorine reduction |
| US10651015B2 (en) * | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| JP2018006299A (en) * | 2016-07-08 | 2018-01-11 | 東芝メモリ株式会社 | Processing object susceptor for plasma processing apparatus, plasma processing apparatus and plasma processing method |
| US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
| KR20180136302A (en) * | 2017-06-14 | 2018-12-24 | 삼성전자주식회사 | Plasma processing equipment and Method for fabricating semiconductor device using the same |
| JP6826955B2 (en) * | 2017-06-14 | 2021-02-10 | 東京エレクトロン株式会社 | Plasma processing equipment and plasma processing method |
| US10763081B2 (en) | 2017-07-10 | 2020-09-01 | Applied Materials, Inc. | Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10714372B2 (en) | 2017-09-20 | 2020-07-14 | Applied Materials, Inc. | System for coupling a voltage to portions of a substrate |
| US10904996B2 (en) | 2017-09-20 | 2021-01-26 | Applied Materials, Inc. | Substrate support with electrically floating power supply |
| US10763150B2 (en) | 2017-09-20 | 2020-09-01 | Applied Materials, Inc. | System for coupling a voltage to spatially segmented portions of the wafer with variable voltage |
| US10811296B2 (en) | 2017-09-20 | 2020-10-20 | Applied Materials, Inc. | Substrate support with dual embedded electrodes |
| US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
| KR101893035B1 (en) * | 2017-09-27 | 2018-08-30 | 비씨엔씨 주식회사 | Cover ring assembly of plasma processing chamber |
| KR101980203B1 (en) * | 2017-10-30 | 2019-05-21 | 세메스 주식회사 | Support unit and substrate treating apparatus including the same |
| CN111788655B (en) * | 2017-11-17 | 2024-04-05 | 先进工程解决方案全球控股私人有限公司 | Spatial and temporal control of ion bias voltage for plasma processing |
| TWI767088B (en) | 2017-11-17 | 2022-06-11 | 新加坡商Ａｅｓ全球公司 | Plasma processing system, control method for modulating supplies therein and related plasma processing control system |
| CN111868873B (en) | 2017-11-17 | 2023-06-16 | 先进工程解决方案全球控股私人有限公司 | Synchronized pulsing of plasma processing source and substrate bias |
| JP7033441B2 (en) * | 2017-12-01 | 2022-03-10 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US10727075B2 (en) | 2017-12-22 | 2020-07-28 | Applied Materials, Inc. | Uniform EUV photoresist patterning utilizing pulsed plasma process |
| CN109994355B (en) * | 2017-12-29 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Plasma reactor with low-frequency radio frequency power distribution adjusting function |
| US11387134B2 (en) * | 2018-01-19 | 2022-07-12 | Applied Materials, Inc. | Process kit for a substrate support |
| CN111095523A (en) * | 2018-01-22 | 2020-05-01 | 应用材料公司 | Processing with powered edge rings |
| KR102024568B1 (en) * | 2018-02-13 | 2019-09-24 | 한국기초과학지원연구원 | Point etching module using annular surface dielectric barrier discharge apparatus and method for control etching profile of point etching module |
| US11086233B2 (en) | 2018-03-20 | 2021-08-10 | Lam Research Corporation | Protective coating for electrostatic chucks |
| CN110323117A (en) | 2018-03-28 | 2019-10-11 | 三星电子株式会社 | Apparatus for processing plasma |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
| US10347500B1 (en) | 2018-06-04 | 2019-07-09 | Applied Materials, Inc. | Device fabrication via pulsed plasma |
| US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
| JP2019220497A (en) * | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
| US11183368B2 (en) * | 2018-08-02 | 2021-11-23 | Lam Research Corporation | RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks |
| CN112654655A (en) | 2018-09-04 | 2021-04-13 | 应用材料公司 | Advanced polishing pad formulations |
| JP7140610B2 (en) * | 2018-09-06 | 2022-09-21 | 株式会社日立ハイテク | Plasma processing equipment |
| CN109273341B (en) * | 2018-10-18 | 2021-01-08 | 北京北方华创微电子装备有限公司 | Plasma process method |
| JP7145041B2 (en) | 2018-11-08 | 2022-09-30 | 東京エレクトロン株式会社 | Substrate support, plasma processing apparatus, and focus ring |
| KR102595900B1 (en) * | 2018-11-13 | 2023-10-30 | 삼성전자주식회사 | Plasma processing apparatus |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
| US11955314B2 (en) * | 2019-01-09 | 2024-04-09 | Tokyo Electron Limited | Plasma processing apparatus |
| JP7451540B2 (en) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | Feedback loop for controlling pulsed voltage waveforms |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US10784089B2 (en) | 2019-02-01 | 2020-09-22 | Applied Materials, Inc. | Temperature and bias control of edge ring |
| JP7340938B2 (en) * | 2019-02-25 | 2023-09-08 | 東京エレクトロン株式会社 | Mounting table and substrate processing equipment |
| WO2020214327A1 (en) | 2019-04-19 | 2020-10-22 | Applied Materials, Inc. | Ring removal from processing chamber |
| JP7271330B2 (en) * | 2019-06-18 | 2023-05-11 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
| WO2020255319A1 (en) * | 2019-06-20 | 2020-12-24 | 株式会社日立ハイテク | Plasma processing device and plasma processing method |
| KR20220031713A (en) | 2019-07-12 | 2022-03-11 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | Bias supply with single controlled switch |
| JP7362400B2 (en) * | 2019-10-01 | 2023-10-17 | 東京エレクトロン株式会社 | Mounting table and plasma processing equipment |
| JP7325294B2 (en) | 2019-10-17 | 2023-08-14 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| WO2021124470A1 (en) * | 2019-12-18 | 2021-06-24 | 株式会社日立ハイテク | Plasma treatment device |
| KR102177146B1 (en) * | 2020-04-10 | 2020-11-10 | 비씨엔씨 주식회사 | Edge ring for plasma process chamber |
| US11276601B2 (en) * | 2020-04-10 | 2022-03-15 | Applied Materials, Inc. | Apparatus and methods for manipulating power at an edge ring in a plasma processing device |
| TW202234461A (en) * | 2020-05-01 | 2022-09-01 | 日商東京威力科創股份有限公司 | Etching apparatus and etching method |
| US11404250B2 (en) * | 2020-07-08 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma etcher edge ring with a chamfer geometry and impedance design |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| CN112736015A (en) * | 2020-12-31 | 2021-04-30 | 拓荆科技股份有限公司 | Apparatus for adjusting plasma profile in a processing chamber and method for controlling the same |
| KR20220100339A (en) | 2021-01-08 | 2022-07-15 | 삼성전자주식회사 | Plasma processing apparatus and semiconductor device menufacturing method using the same |
| WO2022159804A1 (en) * | 2021-01-23 | 2022-07-28 | Sheperak Thomas J | Plasma gas generator |
| CN114883166A (en) * | 2021-02-05 | 2022-08-09 | 东京毅力科创株式会社 | Substrate support and substrate processing apparatus |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| JPWO2022264571A1 (en) | 2021-06-16 | 2022-12-22 | ||
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6039836A (en) | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
| JP2002009043A (en) * | 2000-06-23 | 2002-01-11 | Hitachi Ltd | Etching device and manufacturing method of semiconductor device using it |
| US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| JP2004022822A (en) * | 2002-06-17 | 2004-01-22 | Shibaura Mechatronics Corp | Plasma processing method and device |
| CN100418187C (en) * | 2003-02-07 | 2008-09-10 | 东京毅力科创株式会社 | Plasma processing device, annular element and plasma processing method |
| US20060172542A1 (en) | 2005-01-28 | 2006-08-03 | Applied Materials, Inc. | Method and apparatus to confine plasma and to enhance flow conductance |
| US9184043B2 (en) * | 2006-05-24 | 2015-11-10 | Lam Research Corporation | Edge electrodes with dielectric covers |
| CN101627462B (en) | 2007-03-05 | 2012-06-20 | 朗姆研究公司 | Plasma processing chamber configuring for cleaning bevel edge of substrate and method for cleaning bevel edge of processing chamber |
| JP5317424B2 (en) * | 2007-03-28 | 2013-10-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US7758764B2 (en) | 2007-06-28 | 2010-07-20 | Lam Research Corporation | Methods and apparatus for substrate processing |
| US8607731B2 (en) * | 2008-06-23 | 2013-12-17 | Applied Materials, Inc. | Cathode with inner and outer electrodes at different heights |
| US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
| US8414790B2 (en) * | 2008-11-13 | 2013-04-09 | Lam Research Corporation | Bevel plasma treatment to enhance wet edge clean |
| JP5371466B2 (en) * | 2009-02-12 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
| JP5357639B2 (en) * | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
| US20110011534A1 (en) * | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
| JP3154930U (en) * | 2009-08-19 | 2009-10-29 | 日本碍子株式会社 | Ceramic parts with built-in electrodes |
| JP5606063B2 (en) * | 2009-12-28 | 2014-10-15 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US20120164834A1 (en) | 2010-12-22 | 2012-06-28 | Kevin Jennings | Variable-Density Plasma Processing of Semiconductor Substrates |
-
2016
- 2016-03-10 US US15/067,068 patent/US10163610B2/en active Active
- 2016-03-11 TW TW105107509A patent/TWI697951B/en active
- 2016-03-11 KR KR1020160029763A patent/KR102570642B1/en active IP Right Grant
- 2016-03-11 SG SG10202107291WA patent/SG10202107291WA/en unknown
- 2016-03-11 SG SG10201601910WA patent/SG10201601910WA/en unknown
- 2016-03-11 TW TW110147954A patent/TWI810752B/en active
- 2016-03-11 TW TW109116969A patent/TWI753436B/en active
- 2016-03-18 JP JP2016054582A patent/JP6852974B2/en active Active
- 2016-04-06 CN CN201610210239.0A patent/CN106356274B/en active Active
-
2021
- 2021-03-11 JP JP2021038938A patent/JP7177200B2/en active Active
-
2023
- 2023-08-21 KR KR1020230109333A patent/KR20230127181A/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| KR102570642B1 (en) | 2023-08-23 |
| US20170018411A1 (en) | 2017-01-19 |
| US10163610B2 (en) | 2018-12-25 |
| JP7177200B2 (en) | 2022-11-22 |
| SG10202107291WA (en) | 2021-08-30 |
| TW202213511A (en) | 2022-04-01 |
| TWI697951B (en) | 2020-07-01 |
| JP2021100141A (en) | 2021-07-01 |
| CN106356274B (en) | 2019-01-01 |
| JP6852974B2 (en) | 2021-03-31 |
| TW201705266A (en) | 2017-02-01 |
| JP2017055100A (en) | 2017-03-16 |
| KR20230127181A (en) | 2023-08-31 |
| TWI753436B (en) | 2022-01-21 |
| CN106356274A (en) | 2017-01-25 |
| TW202034400A (en) | 2020-09-16 |
| TWI810752B (en) | 2023-08-01 |
| KR20170008138A (en) | 2017-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG10201601910WA (en) | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation | |
| GB2545056B (en) | Process for selecting an optimised trajectory | |
| SG10201610044VA (en) | Plasma etching method | |
| EP3337300A4 (en) | Plasma control device | |
| EP3175474A4 (en) | Ion funnel for efficient transmission of low mass-to-charge ratio ions with reduced gas flow at the exit | |
| EP3367422A4 (en) | Time-of-flight mass spectrometer | |
| GB2585167B (en) | Physically Guided Rapid Evaporative Ionisation Mass Spectrometry | |
| EP3711078C0 (en) | Linearized energetic radio-frequency plasma ion source | |
| GB201617173D0 (en) | Plasma accelerator | |
| EP3214640A4 (en) | Plasma etching method | |
| EP3246939A4 (en) | Chiller device for plasma processing device | |
| EP3283129A4 (en) | Plasma thread | |
| EP3266023A4 (en) | Memristance feedback tuning | |
| GB201611925D0 (en) | Cyclotron target | |
| EP3224856A4 (en) | Rf ion guide | |
| EP3264866A4 (en) | Microwave plasma treatment apparatus | |
| GB2550739B (en) | Ion guide and mass spectrometer using same | |
| EP3201611A4 (en) | Wafer edge inspection with trajectory following edge profile | |
| EP3506335A4 (en) | Plasma etching method | |
| EP3195347A4 (en) | Plasma cleaning for mass spectrometers | |
| EP3398204A4 (en) | Wafer singulation process control | |
| EP3432345A4 (en) | Plasma etching method | |
| EP3495020A4 (en) | Plasma treatment device | |
| EP3432346A4 (en) | Plasma etching method | |
| SG11201705639VA (en) | Plasma etching method |