SG10201601756YA - Apparatus and method to measure temperature of 3d semiconductor structures via laser diffraction - Google Patents

Apparatus and method to measure temperature of 3d semiconductor structures via laser diffraction

Info

Publication number
SG10201601756YA
SG10201601756YA SG10201601756YA SG10201601756YA SG10201601756YA SG 10201601756Y A SG10201601756Y A SG 10201601756YA SG 10201601756Y A SG10201601756Y A SG 10201601756YA SG 10201601756Y A SG10201601756Y A SG 10201601756YA SG 10201601756Y A SG10201601756Y A SG 10201601756YA
Authority
SG
Singapore
Prior art keywords
laser diffraction
semiconductor structures
measure temperature
via laser
structures via
Prior art date
Application number
SG10201601756YA
Other languages
English (en)
Inventor
Heng Pan
Matthew Scott Rogers
Aaron Muir Hunter
Stephen Moffatt
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201601756YA publication Critical patent/SG10201601756YA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0803—Arrangements for time-dependent attenuation of radiation signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0074—Radiation pyrometry, e.g. infrared or optical thermometry having separate detection of emissivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077—Imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
SG10201601756YA 2011-11-10 2012-11-08 Apparatus and method to measure temperature of 3d semiconductor structures via laser diffraction SG10201601756YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161558309P 2011-11-10 2011-11-10

Publications (1)

Publication Number Publication Date
SG10201601756YA true SG10201601756YA (en) 2016-04-28

Family

ID=48280340

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201601756YA SG10201601756YA (en) 2011-11-10 2012-11-08 Apparatus and method to measure temperature of 3d semiconductor structures via laser diffraction
SG11201401029UA SG11201401029UA (en) 2011-11-10 2012-11-08 Apparatus and method to measure temperature of 3d semiconductor structures via laser diffraction

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201401029UA SG11201401029UA (en) 2011-11-10 2012-11-08 Apparatus and method to measure temperature of 3d semiconductor structures via laser diffraction

Country Status (6)

Country Link
US (2) US9909925B2 (zh)
KR (1) KR102039200B1 (zh)
CN (2) CN103890925B (zh)
SG (2) SG10201601756YA (zh)
TW (2) TWI628730B (zh)
WO (1) WO2013070917A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102421732B1 (ko) * 2018-04-20 2022-07-18 삼성전자주식회사 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치
US11162845B2 (en) 2018-06-26 2021-11-02 Applied Materials, Inc. Method and apparatus for measuring temperature
KR102194695B1 (ko) * 2019-12-31 2020-12-24 한국과학기술원 3d 프린팅 공정 중 형성되는 적층부의 높이를 추정하는 방법 및 장치, 이를 구비한 3d 프린팅 시스템
CN111189543B (zh) * 2020-01-15 2021-06-08 大连理工大学 一种增材制造中红外热像仪发射率在线标定方法
US11215934B2 (en) * 2020-01-21 2022-01-04 Applied Materials, Inc. In-situ light detection methods and apparatus for ultraviolet semiconductor substrate processing

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JPH05320917A (ja) * 1992-05-15 1993-12-07 Sumitomo Electric Ind Ltd 薄膜形成装置
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US6183130B1 (en) * 1998-02-20 2001-02-06 Applied Materials, Inc. Apparatus for substrate temperature measurement using a reflecting cavity and detector
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JP2000058423A (ja) * 1998-08-12 2000-02-25 Toshiba Corp 熱処理方法及び熱処理装置
US6200023B1 (en) * 1999-03-15 2001-03-13 Steag Rtp Systems, Inc. Method for determining the temperature in a thermal processing chamber
US6183127B1 (en) * 1999-03-29 2001-02-06 Eaton Corporation System and method for the real time determination of the in situ emissivity of a workpiece during processing
US6190040B1 (en) * 1999-05-10 2001-02-20 Sensarray Corporation Apparatus for sensing temperature on a substrate in an integrated circuit fabrication tool
US6479801B1 (en) * 1999-10-22 2002-11-12 Tokyo Electron Limited Temperature measuring method, temperature control method and processing apparatus
JP2001249050A (ja) * 2000-03-07 2001-09-14 Toshiba Corp 温度測定装置、成膜装置、エッチング装置および温度測定方法、エッチング方法
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KR20040085267A (ko) * 2003-03-31 2004-10-08 삼성전자주식회사 원자막 증착 장치
US20060032433A1 (en) * 2004-05-14 2006-02-16 Japan Synchrotron Radiation Research Institute Rapid X-ray diffraction method for structural analysis of a nano material on a surface or at an interface and for structural analysis of a solid/liquid interface, and apparatus used for the method
JP2007040981A (ja) 2005-06-23 2007-02-15 Komatsu Ltd ウエハ温度測定方法及びウエハ温度測定装置
WO2007005489A2 (en) * 2005-07-05 2007-01-11 Mattson Technology, Inc. Method and system for determining optical properties of semiconductor wafers
JP2007271399A (ja) * 2006-03-31 2007-10-18 National Institute Of Advanced Industrial & Technology 基板の温度測定方法及びその装置
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KR101720077B1 (ko) * 2009-07-28 2017-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치의 검사 방법 및 제조 방법
CN101907492A (zh) * 2010-07-16 2010-12-08 浙江工业大学 一种基于物体发射光谱的温度测量方法
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Also Published As

Publication number Publication date
TWI585880B (zh) 2017-06-01
SG11201401029UA (en) 2014-07-30
KR102039200B1 (ko) 2019-10-31
TW201332040A (zh) 2013-08-01
US9909925B2 (en) 2018-03-06
US20130120737A1 (en) 2013-05-16
KR20140096308A (ko) 2014-08-05
TW201732985A (zh) 2017-09-16
US20180283957A1 (en) 2018-10-04
CN103890925B (zh) 2017-05-17
CN107421642A (zh) 2017-12-01
WO2013070917A1 (en) 2013-05-16
CN103890925A (zh) 2014-06-25
TWI628730B (zh) 2018-07-01

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