SG10201600388WA - Method of processing single-crystal member - Google Patents

Method of processing single-crystal member

Info

Publication number
SG10201600388WA
SG10201600388WA SG10201600388WA SG10201600388WA SG10201600388WA SG 10201600388W A SG10201600388W A SG 10201600388WA SG 10201600388W A SG10201600388W A SG 10201600388WA SG 10201600388W A SG10201600388W A SG 10201600388WA SG 10201600388W A SG10201600388W A SG 10201600388WA
Authority
SG
Singapore
Prior art keywords
crystal member
processing single
processing
crystal
Prior art date
Application number
SG10201600388WA
Inventor
Morikazu Hiroshi
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201600388WA publication Critical patent/SG10201600388WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
SG10201600388WA 2015-02-02 2016-01-18 Method of processing single-crystal member SG10201600388WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015018629A JP2016143766A (en) 2015-02-02 2015-02-02 Processing method of single crystal member

Publications (1)

Publication Number Publication Date
SG10201600388WA true SG10201600388WA (en) 2016-09-29

Family

ID=56410508

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201600388WA SG10201600388WA (en) 2015-02-02 2016-01-18 Method of processing single-crystal member

Country Status (7)

Country Link
US (1) US9543466B2 (en)
JP (1) JP2016143766A (en)
KR (1) KR20160094859A (en)
CN (1) CN105834579B (en)
DE (1) DE102016201252A1 (en)
SG (1) SG10201600388WA (en)
TW (1) TW201642329A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6549014B2 (en) * 2015-10-13 2019-07-24 株式会社ディスコ Optical device wafer processing method
JP2018063407A (en) * 2016-10-14 2018-04-19 株式会社ディスコ Method of processing bonded substrate
JP6837905B2 (en) 2017-04-25 2021-03-03 株式会社ディスコ Wafer processing method
JP7098284B2 (en) * 2017-07-06 2022-07-11 株式会社ディスコ Laser processing equipment and laser processing method
JP2019125688A (en) * 2018-01-16 2019-07-25 株式会社ディスコ Laser processing method of workpiece
JP7305270B2 (en) * 2019-08-07 2023-07-10 株式会社ディスコ Wafer processing method
JP7305269B2 (en) * 2019-08-07 2023-07-10 株式会社ディスコ Wafer processing method
JP7305268B2 (en) * 2019-08-07 2023-07-10 株式会社ディスコ Wafer processing method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4589190A (en) * 1984-03-23 1986-05-20 General Electric Company Fabrication of drilled and diffused junction field-effect transistors
JPH10305420A (en) 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
JP4563097B2 (en) * 2003-09-10 2010-10-13 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP5552627B2 (en) * 2009-01-15 2014-07-16 並木精密宝石株式会社 Internally modified substrate for epitaxial growth, crystal film formed by using the same, device, bulk substrate, and manufacturing method thereof
EP2394775B1 (en) * 2009-02-09 2019-04-03 Hamamatsu Photonics K.K. Workpiece cutting method
JP2011201759A (en) * 2010-03-05 2011-10-13 Namiki Precision Jewel Co Ltd Single crystal substrate with multilayer film, production method for single crystal substrate with multilayer film, and device production method
JP6208430B2 (en) * 2013-01-25 2017-10-04 株式会社ディスコ Laser processing method
JP6151557B2 (en) * 2013-05-13 2017-06-21 株式会社ディスコ Laser processing method
JP6097146B2 (en) * 2013-05-16 2017-03-15 株式会社ディスコ Processing method of optical device wafer

Also Published As

Publication number Publication date
CN105834579A (en) 2016-08-10
CN105834579B (en) 2020-04-10
KR20160094859A (en) 2016-08-10
TW201642329A (en) 2016-12-01
DE102016201252A1 (en) 2016-08-04
JP2016143766A (en) 2016-08-08
US20160225945A1 (en) 2016-08-04
US9543466B2 (en) 2017-01-10

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