SG10201510712PA - Etchant solutions and method of use thereof - Google Patents

Etchant solutions and method of use thereof

Info

Publication number
SG10201510712PA
SG10201510712PA SG10201510712PA SG10201510712PA SG10201510712PA SG 10201510712P A SG10201510712P A SG 10201510712PA SG 10201510712P A SG10201510712P A SG 10201510712PA SG 10201510712P A SG10201510712P A SG 10201510712PA SG 10201510712P A SG10201510712P A SG 10201510712PA
Authority
SG
Singapore
Prior art keywords
etchant solutions
etchant
solutions
Prior art date
Application number
SG10201510712PA
Inventor
Everad Parris Gene
Jack Casteel William Jr
Chen Tianniu
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201510712PA publication Critical patent/SG10201510712PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
SG10201510712PA 2014-12-29 2015-12-29 Etchant solutions and method of use thereof SG10201510712PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462097408P 2014-12-29 2014-12-29
US14/978,383 US9873833B2 (en) 2014-12-29 2015-12-22 Etchant solutions and method of use thereof

Publications (1)

Publication Number Publication Date
SG10201510712PA true SG10201510712PA (en) 2016-07-28

Family

ID=55361303

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201510712PA SG10201510712PA (en) 2014-12-29 2015-12-29 Etchant solutions and method of use thereof

Country Status (9)

Country Link
US (1) US9873833B2 (en)
EP (1) EP3040397B1 (en)
JP (2) JP6809787B2 (en)
KR (3) KR20160080084A (en)
CN (1) CN105733587B (en)
MY (1) MY180929A (en)
PH (1) PH12016000004B1 (en)
SG (1) SG10201510712PA (en)
TW (1) TWI580764B (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI642763B (en) * 2014-01-27 2018-12-01 三菱瓦斯化學股份有限公司 Liquid composition for removing titanium nitride, method for washing semiconductor element using the liquid composition, and method for manufacturing semiconductor element
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
US10072237B2 (en) 2015-08-05 2018-09-11 Versum Materials Us, Llc Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
KR102532413B1 (en) * 2016-07-21 2023-05-15 동우 화인켐 주식회사 Eching composition for etching a polysilicon and method for manufacturing a semiconductor device
KR102368969B1 (en) * 2017-03-30 2022-03-02 동우 화인켐 주식회사 Etching solution composition, manufacturing method of an array substrate for display device using the same
US10934485B2 (en) * 2017-08-25 2021-03-02 Versum Materials Us, Llc Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
US10761423B2 (en) 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
CN108085683A (en) * 2018-01-22 2018-05-29 深圳市华星光电技术有限公司 A kind of etchant
US11180697B2 (en) * 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
TWI683362B (en) * 2018-12-17 2020-01-21 許富翔 Method for trimming si fin structure
JP7305679B2 (en) * 2018-12-18 2023-07-10 株式会社トクヤマ Silicon etchant
CN110438504A (en) * 2019-08-19 2019-11-12 江阴江化微电子材料股份有限公司 A kind of alum gate Ke Kai area's silicon slag removes composition and silicon slag sweep-out method
CN112480928A (en) * 2019-09-11 2021-03-12 利绅科技股份有限公司 Silicon etching composition and etching method for silicon substrate by using same
CN110922970A (en) * 2019-11-29 2020-03-27 南京纳鑫新材料有限公司 PERC battery back polishing additive and technology
CN111440613B (en) * 2019-12-09 2022-03-25 杭州格林达电子材料股份有限公司 TMAH anisotropic silicon etching liquid and preparation method thereof
CN111341655A (en) * 2020-03-07 2020-06-26 浙江中晶科技股份有限公司 Double-time alkali corrosion processing technology for heavily-doped borosilicate sheet
TWI751568B (en) 2020-05-29 2022-01-01 新應材股份有限公司 Etchant composition, tackifier, alkaline solution, method of removing polyimide and etching process
CN113736466B (en) * 2020-05-29 2023-05-12 新应材股份有限公司 Etchant composition, adhesion promoter, method for removing polyimide and etching process
WO2022138754A1 (en) 2020-12-24 2022-06-30 株式会社トクヤマ Silicon etching liquid, and method for producing silicon devices and method for processing substrates, each using said etching liquid
CN113186044B (en) * 2021-04-27 2022-12-30 上海新阳半导体材料股份有限公司 Preparation method of fluorine-containing cleaning liquid composition
CN113161234B (en) * 2021-04-27 2023-02-17 上海新阳半导体材料股份有限公司 Application of fluorine-containing cleaning liquid composition
US11920252B2 (en) 2021-08-05 2024-03-05 Toyota Motor Engineering & Manufacturing North America, Inc. SU-8 etching technique using molten salt
CN114854419B (en) * 2022-04-13 2023-09-05 华中科技大学 Alkaline etching solution for wet etching of phase-change material and application thereof
CN115011347B (en) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 Selective etching solution for aluminum nitride and tungsten
CN115044376B (en) * 2022-06-30 2023-12-29 湖北兴福电子材料股份有限公司 Scandium-doped aluminum nitride etching solution and application thereof
CN114989825B (en) * 2022-06-30 2023-07-11 湖北兴福电子材料股份有限公司 Scandium-doped aluminum nitride and tungsten selective etching solution
CN115595154A (en) * 2022-08-31 2023-01-13 湖北兴福电子材料股份有限公司（Cn） Selective etching solution for SiGe and Si
CN115851134A (en) * 2022-10-27 2023-03-28 万华化学集团电子材料有限公司 High-precision silicon wafer polishing composition and application thereof

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE789090A (en) * 1971-09-22 1973-01-15 Western Electric Co SEMICONDUCTOR ATTACK METHOD AND SOLUTION
US3980587A (en) * 1974-08-16 1976-09-14 G. T. Schjeldahl Company Stripper composition
JPH03201533A (en) 1989-12-28 1991-09-03 Toyota Central Res & Dev Lab Inc Anisotropic etchant for silicon
JP3160344B2 (en) 1991-01-25 2001-04-25 アシュランド インコーポレーテッド Organic stripping composition
JP3525612B2 (en) 1996-03-12 2004-05-10 セイコーエプソン株式会社 Method of processing silicon wafer and electronic device using the silicon wafer
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP4631152B2 (en) 2000-03-16 2011-02-16 株式会社デンソー Manufacturing method of semiconductor device using silicon substrate
JP3890981B2 (en) 2002-01-07 2007-03-07 株式会社Ｓｕｍｃｏ Alkaline etching solution, method for etching silicon wafer using this etching solution, and method for differentiating front and back surfaces of silicon wafer using this method
JP5109261B2 (en) 2006-02-10 2012-12-26 三菱瓦斯化学株式会社 Silicon anisotropic etchant composition for silicon microfabrication
JP2007305832A (en) * 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device
JP5142592B2 (en) 2007-06-06 2013-02-13 関東化学株式会社 Alkaline aqueous solution composition used for substrate cleaning or etching
JP5022198B2 (en) * 2007-11-27 2012-09-12 パナソニック株式会社 Method for manufacturing transducer substrate
US7999335B2 (en) * 2007-12-05 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Micromachine and method for manufacturing the same
JP5302551B2 (en) 2008-02-28 2013-10-02 林純薬工業株式会社 Silicon anisotropic etchant composition
JP5379441B2 (en) 2008-10-09 2013-12-25 関東化学株式会社 Alkaline aqueous solution composition for substrate processing
JP5339880B2 (en) * 2008-12-11 2013-11-13 株式会社新菱 Etching solution for silicon substrate and surface processing method for silicon substrate
US8883034B2 (en) 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
JP5720573B2 (en) 2009-10-02 2015-05-20 三菱瓦斯化学株式会社 Silicon etchant and etching method
EP2355138B1 (en) * 2010-01-28 2016-08-24 Canon Kabushiki Kaisha Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate
WO2012039390A1 (en) * 2010-09-24 2012-03-29 株式会社 フジミインコーポレーテッド Composition for polishing and composition for rinsing
JP5869368B2 (en) 2011-03-04 2016-02-24 富士フイルム株式会社 Capacitor structure forming method and silicon etching solution used therefor
JP2012209480A (en) * 2011-03-30 2012-10-25 Disco Abrasive Syst Ltd Processing method of electrode-embedded wafer
JP2013168610A (en) * 2012-02-17 2013-08-29 Tokuyama Corp Composition for texture formation, manufacturing method of silicon substrate, and preparation kit of composition for texture formation
US20130295712A1 (en) * 2012-05-03 2013-11-07 Advanced Technology Materials, Inc. Methods of texturing surfaces for controlled reflection
JP5943755B2 (en) * 2012-07-20 2016-07-05 キヤノン株式会社 Method for manufacturing substrate of liquid discharge head
JP2014033046A (en) * 2012-08-02 2014-02-20 Tokuyama Corp Composition for forming texture, production method of silicon substrate, and composition preparation kit for forming texture
JP6146144B2 (en) 2013-06-03 2017-06-14 富士通株式会社 Semiconductor device and manufacturing method thereof.

Also Published As

Publication number Publication date
KR102378486B1 (en) 2022-03-23
JP2019068087A (en) 2019-04-25
US20160186058A1 (en) 2016-06-30
KR20160080084A (en) 2016-07-07
JP6809787B2 (en) 2021-01-06
TW201623581A (en) 2016-07-01
PH12016000004A1 (en) 2017-07-10
JP6932683B2 (en) 2021-09-08
EP3040397A1 (en) 2016-07-06
CN105733587A (en) 2016-07-06
TWI580764B (en) 2017-05-01
JP2016127293A (en) 2016-07-11
KR20180064365A (en) 2018-06-14
MY180929A (en) 2020-12-12
CN105733587B (en) 2020-04-03
KR102285187B1 (en) 2021-08-02
US9873833B2 (en) 2018-01-23
EP3040397B1 (en) 2021-06-30
KR20210095845A (en) 2021-08-03
PH12016000004B1 (en) 2017-07-10

Similar Documents

Publication Publication Date Title
SG10201510712PA (en) Etchant solutions and method of use thereof
IL250415B (en) Anti-pdl- antibodies and methods of use thereof
ZA201703075B (en) Substituted chromanes and method of use
IL282572B (en) Tetrahydropyranyl amino-pyrrolopyrimidinone and methods of use thereof
IL251988A0 (en) Glycan-interacting compounds and methods of use
GB201417048D0 (en) Occupancy-control device and methods of use
GB201514760D0 (en) Compounds and method of use
GB201421894D0 (en) End fitting and method of manufacture
PT3089971T (en) Compounds and methods of use
GB2529433B (en) Winch assembly and method of use
EP3152281A4 (en) Defoaming agent and associated methods of use
SG11201605915WA (en) Furo-3-carboxamide derivatives and methods of use
GB201421197D0 (en) Apparatus and method of use thereof
GB2544019B (en) Gripping block arrangement and method of use
GB201406245D0 (en) Vent value and method of use
GB201403697D0 (en) Compounds and methods of use
GB201416797D0 (en) Contianer and method of use thereof
SG10201912615PA (en) Tetrahydropyranyl amino-pyrrolopyrimidinone and methods of use thereof
AU2014904885A0 (en) Device and method of use
GB201419990D0 (en) Hprseshoe and method of manufacture
GB201404133D0 (en) Garment and method of use thereof