SG10201507980YA - Gas distribution device with actively cooled grid - Google Patents
Gas distribution device with actively cooled gridInfo
- Publication number
- SG10201507980YA SG10201507980YA SG10201507980YA SG10201507980YA SG10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA
- Authority
- SG
- Singapore
- Prior art keywords
- distribution device
- gas distribution
- actively cooled
- cooled grid
- grid
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/498,049 US9679749B2 (en) | 2014-09-26 | 2014-09-26 | Gas distribution device with actively cooled grid |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201507980YA true SG10201507980YA (en) | 2016-04-28 |
Family
ID=55585229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201507980YA SG10201507980YA (en) | 2014-09-26 | 2015-09-25 | Gas distribution device with actively cooled grid |
Country Status (5)
Country | Link |
---|---|
US (1) | US9679749B2 (zh) |
KR (1) | KR102453999B1 (zh) |
CN (1) | CN105603390B (zh) |
SG (1) | SG10201507980YA (zh) |
TW (1) | TWI676706B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9679749B2 (en) * | 2014-09-26 | 2017-06-13 | Lam Research Corporation | Gas distribution device with actively cooled grid |
CN108695189B (zh) * | 2017-04-12 | 2021-05-04 | 台湾积体电路制造股份有限公司 | 晶圆加工装置及加工半导体晶圆的方法 |
KR20210090279A (ko) * | 2018-12-07 | 2021-07-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 컴포넌트, 컴포넌트를 제조하는 방법, 및 컴포넌트를 세정하는 방법 |
US11721527B2 (en) * | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
TW202044320A (zh) * | 2019-01-23 | 2020-12-01 | 美商蘭姆研究公司 | 包含下游電漿用雙離子過濾器的基板處理系統 |
WO2020219408A1 (en) * | 2019-04-26 | 2020-10-29 | Lam Research Corporation | High temperature heating of a substrate in a processing chamber |
CN114576179B (zh) * | 2022-03-28 | 2023-04-18 | 浙江颐顿机电有限公司 | 一种气环式鼓风机 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003054912A1 (en) * | 2001-12-20 | 2003-07-03 | Tokyo Electron Limited | Method and apparatus comprising a magnetic filter for plasma processing a workpiece |
JP5519105B2 (ja) * | 2004-08-02 | 2014-06-11 | ビーコ・インストゥルメンツ・インコーポレイテッド | 化学気相成長の方法及び化学気相成長リアクタ用のガス供給システム |
KR101526615B1 (ko) * | 2007-03-12 | 2015-06-05 | 도쿄엘렉트론가부시키가이샤 | 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법 |
WO2009058376A2 (en) * | 2007-10-31 | 2009-05-07 | Lam Research Corporation | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
US8361276B2 (en) * | 2008-02-11 | 2013-01-29 | Apjet, Inc. | Large area, atmospheric pressure plasma for downstream processing |
US20100078320A1 (en) * | 2008-09-26 | 2010-04-01 | Applied Materials, Inc. | Microwave plasma containment shield shaping |
US8749053B2 (en) * | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US9966236B2 (en) * | 2011-06-15 | 2018-05-08 | Lam Research Corporation | Powered grid for plasma chamber |
US9613825B2 (en) * | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
US8916477B2 (en) | 2012-07-02 | 2014-12-23 | Novellus Systems, Inc. | Polysilicon etch with high selectivity |
US9679749B2 (en) * | 2014-09-26 | 2017-06-13 | Lam Research Corporation | Gas distribution device with actively cooled grid |
-
2014
- 2014-09-26 US US14/498,049 patent/US9679749B2/en active Active
-
2015
- 2015-09-24 TW TW104131529A patent/TWI676706B/zh active
- 2015-09-25 SG SG10201507980YA patent/SG10201507980YA/en unknown
- 2015-09-25 CN CN201510621729.5A patent/CN105603390B/zh active Active
- 2015-09-30 KR KR1020150137940A patent/KR102453999B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TWI676706B (zh) | 2019-11-11 |
KR102453999B1 (ko) | 2022-10-12 |
CN105603390B (zh) | 2018-04-27 |
US20160093472A1 (en) | 2016-03-31 |
US9679749B2 (en) | 2017-06-13 |
TW201632654A (zh) | 2016-09-16 |
KR20160037120A (ko) | 2016-04-05 |
CN105603390A (zh) | 2016-05-25 |
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