SG10201507980YA - Gas distribution device with actively cooled grid - Google Patents

Gas distribution device with actively cooled grid

Info

Publication number
SG10201507980YA
SG10201507980YA SG10201507980YA SG10201507980YA SG10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA SG 10201507980Y A SG10201507980Y A SG 10201507980YA
Authority
SG
Singapore
Prior art keywords
distribution device
gas distribution
actively cooled
cooled grid
grid
Prior art date
Application number
SG10201507980YA
Inventor
Angelov Ivelin
Kosche Serge
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201507980YA publication Critical patent/SG10201507980YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
SG10201507980YA 2014-09-26 2015-09-25 Gas distribution device with actively cooled grid SG10201507980YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/498,049 US9679749B2 (en) 2014-09-26 2014-09-26 Gas distribution device with actively cooled grid

Publications (1)

Publication Number Publication Date
SG10201507980YA true SG10201507980YA (en) 2016-04-28

Family

ID=55585229

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201507980YA SG10201507980YA (en) 2014-09-26 2015-09-25 Gas distribution device with actively cooled grid

Country Status (5)

Country Link
US (1) US9679749B2 (en)
KR (1) KR102453999B1 (en)
CN (1) CN105603390B (en)
SG (1) SG10201507980YA (en)
TW (1) TWI676706B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9679749B2 (en) * 2014-09-26 2017-06-13 Lam Research Corporation Gas distribution device with actively cooled grid
CN108695189B (en) * 2017-04-12 2021-05-04 台湾积体电路制造股份有限公司 Wafer processing apparatus and method of processing semiconductor wafer
WO2020117400A1 (en) * 2018-12-07 2020-06-11 Applied Materials, Inc. A component, method of manufacturing a component, and method of cleaning a component
US11721527B2 (en) * 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US11967486B2 (en) * 2019-01-23 2024-04-23 Lam Research Corporation Substrate processing system including dual ion filter for downstream plasma
WO2020219408A1 (en) * 2019-04-26 2020-10-29 Lam Research Corporation High temperature heating of a substrate in a processing chamber
CN114576179B (en) * 2022-03-28 2023-04-18 浙江颐顿机电有限公司 Gas ring type air blower

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005514762A (en) * 2001-12-20 2005-05-19 東京エレクトロン株式会社 Method and apparatus comprising a magnetic filter for plasma processing a workpiece
KR101309334B1 (en) * 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 Multi-cas distribution injector for chemical vapor deposition reactors
WO2008112673A2 (en) * 2007-03-12 2008-09-18 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate processing uniformity
TWI508129B (en) * 2007-10-31 2015-11-11 Lam Res Corp Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
US8361276B2 (en) * 2008-02-11 2013-01-29 Apjet, Inc. Large area, atmospheric pressure plasma for downstream processing
US20100078320A1 (en) * 2008-09-26 2010-04-01 Applied Materials, Inc. Microwave plasma containment shield shaping
US8749053B2 (en) * 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US9966236B2 (en) * 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
US9613825B2 (en) * 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US8916477B2 (en) 2012-07-02 2014-12-23 Novellus Systems, Inc. Polysilicon etch with high selectivity
US9679749B2 (en) * 2014-09-26 2017-06-13 Lam Research Corporation Gas distribution device with actively cooled grid

Also Published As

Publication number Publication date
US20160093472A1 (en) 2016-03-31
TW201632654A (en) 2016-09-16
CN105603390A (en) 2016-05-25
TWI676706B (en) 2019-11-11
KR102453999B1 (en) 2022-10-12
US9679749B2 (en) 2017-06-13
KR20160037120A (en) 2016-04-05
CN105603390B (en) 2018-04-27

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