SG10201505482WA - Titanium nitride hard mask and etch residue removal - Google Patents

Titanium nitride hard mask and etch residue removal

Info

Publication number
SG10201505482WA
SG10201505482WA SG10201505482WA SG10201505482WA SG10201505482WA SG 10201505482W A SG10201505482W A SG 10201505482WA SG 10201505482W A SG10201505482W A SG 10201505482WA SG 10201505482W A SG10201505482W A SG 10201505482WA SG 10201505482W A SG10201505482W A SG 10201505482WA
Authority
SG
Singapore
Prior art keywords
hard mask
titanium nitride
residue removal
etch residue
nitride hard
Prior art date
Application number
SG10201505482WA
Inventor
Jack Casteel William Jr
Inaoka Seiji
Dar Liu Wen
Chen Tianniu
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG10201505482WA publication Critical patent/SG10201505482WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Detergent Compositions (AREA)
SG10201505482WA 2014-07-24 2015-07-13 Titanium nitride hard mask and etch residue removal SG10201505482WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462028539P 2014-07-24 2014-07-24
US14/642,831 US9222018B1 (en) 2014-07-24 2015-03-10 Titanium nitride hard mask and etch residue removal

Publications (1)

Publication Number Publication Date
SG10201505482WA true SG10201505482WA (en) 2016-02-26

Family

ID=54932291

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201505482WA SG10201505482WA (en) 2014-07-24 2015-07-13 Titanium nitride hard mask and etch residue removal

Country Status (8)

Country Link
US (1) US9222018B1 (en)
EP (1) EP3024016B1 (en)
JP (1) JP5869720B2 (en)
KR (1) KR101596366B1 (en)
CN (1) CN105295924B (en)
IL (1) IL240022A (en)
SG (1) SG10201505482WA (en)
TW (1) TWI542665B (en)

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* Cited by examiner, † Cited by third party
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US9472420B2 (en) * 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
US10332784B2 (en) 2015-03-31 2019-06-25 Versum Materials Us, Llc Selectively removing titanium nitride hard mask and etch residue removal
CN105862040A (en) * 2016-06-20 2016-08-17 深圳市华星光电技术有限公司 Copper-etching solution additive and production method of copper-etching solution
WO2018068184A1 (en) * 2016-10-10 2018-04-19 深圳大学 Deplating solution and deplating process for tinc film
CN106773563A (en) * 2016-12-27 2017-05-31 昆山欣谷微电子材料有限公司 Tetrapropyl amine bromide is without aqueous stripping solution
CN110475845B (en) * 2017-03-24 2022-02-25 富士胶片电子材料美国有限公司 Cleaning composition for removing residue on semiconductor substrate
KR101971459B1 (en) * 2017-06-05 2019-04-23 재원산업 주식회사 Composition for cleaning conductive member for fabricating organic light emitting device and cleaning method using the same
US11499236B2 (en) * 2018-03-16 2022-11-15 Versum Materials Us, Llc Etching solution for tungsten word line recess
WO2020079977A1 (en) * 2018-10-17 2020-04-23 株式会社Adeka Surface treatment solution, and method for treating surface of nickel-containing material
JP2020202320A (en) * 2019-06-12 2020-12-17 関東化学株式会社 Hydrogen peroxide decomposition inhibitor
KR20220033141A (en) * 2020-09-09 2022-03-16 동우 화인켐 주식회사 Silicon etchant composition, pattern formation method and manufacturing method of array substrate using the etchant composition, and array substrate manufactured therefrom

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
WO2004100245A1 (en) 2003-05-02 2004-11-18 Ekc Technology, Inc. Removal of post-etch residues in semiconductor processing
JP2005232559A (en) * 2004-02-23 2005-09-02 Meltex Inc Titanium removing solution
JP2008547202A (en) * 2005-06-13 2008-12-25 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Compositions and methods for selective removal of metals or metal alloys after formation of metal silicides
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
JP5364250B2 (en) * 2007-07-13 2013-12-11 東京応化工業株式会社 Titanium nitride stripping solution and method for stripping titanium nitride coating
KR20100082012A (en) 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 Compositions for removal of metal hard mask etching residues from a semiconductor substrate
KR20110127244A (en) * 2009-03-11 2011-11-24 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. Cleaning formulation for removing residues on surfaces
WO2012048079A2 (en) * 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
US9257270B2 (en) 2011-08-15 2016-02-09 Ekc Technology Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material
KR102009250B1 (en) * 2011-09-09 2019-08-12 동우 화인켐 주식회사 Method for manufacturing display device and an etching solution composition for metal layer containing copper/metal oxide layer
KR20130049507A (en) * 2011-11-04 2013-05-14 동우 화인켐 주식회사 Etching solution composition for a titanium nitride layer and method for etching the titanium nitride layer using the same
WO2013101907A1 (en) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR20130084932A (en) * 2012-01-18 2013-07-26 삼성전자주식회사 Method of manufacturing semiconductor device
US8795774B2 (en) * 2012-09-23 2014-08-05 Rohm And Haas Electronic Materials Llc Hardmask
JP6063206B2 (en) * 2012-10-22 2017-01-18 富士フイルム株式会社 Etching solution, etching method using the same, and semiconductor device manufacturing method
JP2014103179A (en) * 2012-11-16 2014-06-05 Fujifilm Corp Etchant for semiconductor substrate, etching method using the same, and method for manufacturing semiconductor element
CN103525599A (en) * 2013-09-23 2014-01-22 杨桂望 Boiler scale remover
US9472420B2 (en) * 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal

Also Published As

Publication number Publication date
TWI542665B (en) 2016-07-21
JP2016025358A (en) 2016-02-08
CN105295924B (en) 2017-12-15
TW201600585A (en) 2016-01-01
CN105295924A (en) 2016-02-03
IL240022A (en) 2017-08-31
US9222018B1 (en) 2015-12-29
JP5869720B2 (en) 2016-02-24
KR101596366B1 (en) 2016-02-25
IL240022A0 (en) 2015-11-30
KR20160012927A (en) 2016-02-03
EP3024016A1 (en) 2016-05-25
EP3024016B1 (en) 2018-02-28

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