SG10201503937XA - Programmable illuminator for a photolithography system - Google Patents

Programmable illuminator for a photolithography system

Info

Publication number
SG10201503937XA
SG10201503937XA SG10201503937XA SG10201503937XA SG10201503937XA SG 10201503937X A SG10201503937X A SG 10201503937XA SG 10201503937X A SG10201503937X A SG 10201503937XA SG 10201503937X A SG10201503937X A SG 10201503937XA SG 10201503937X A SG10201503937X A SG 10201503937XA
Authority
SG
Singapore
Prior art keywords
photolithography system
programmable illuminator
illuminator
programmable
photolithography
Prior art date
Application number
SG10201503937XA
Other languages
English (en)
Inventor
Zlatanov Borislav
M Hawryluk Andrew
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201503937XA publication Critical patent/SG10201503937XA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
SG10201503937XA 2011-08-19 2012-07-24 Programmable illuminator for a photolithography system SG10201503937XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/199,112 US8823921B2 (en) 2011-08-19 2011-08-19 Programmable illuminator for a photolithography system

Publications (1)

Publication Number Publication Date
SG10201503937XA true SG10201503937XA (en) 2015-06-29

Family

ID=47712432

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201503937XA SG10201503937XA (en) 2011-08-19 2012-07-24 Programmable illuminator for a photolithography system
SG2012054912A SG188038A1 (en) 2011-08-19 2012-07-24 Programmable illuminator for a photolithography system

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012054912A SG188038A1 (en) 2011-08-19 2012-07-24 Programmable illuminator for a photolithography system

Country Status (6)

Country Link
US (1) US8823921B2 (https=)
JP (1) JP5521012B2 (https=)
KR (1) KR20130020876A (https=)
CN (1) CN102955376B (https=)
SG (2) SG10201503937XA (https=)
TW (1) TWI497229B (https=)

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CN106933049B (zh) * 2015-12-30 2020-06-16 上海微电子装备（集团）股份有限公司 一种用于半导体光刻的曝光系统与曝光方法
CN108628103B (zh) * 2017-03-15 2021-05-07 中芯国际集成电路制造(上海)有限公司 光强均匀性自动调节装置及调整方法
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DE102018123328B4 (de) * 2018-09-21 2022-09-08 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems
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US20260050221A1 (en) * 2024-08-15 2026-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Lithographic system, and method of using the same to perform lithography
CN118818921A (zh) * 2024-08-30 2024-10-22 新毅东(北京)科技有限公司 光刻机的曝光剂量控制架构

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Also Published As

Publication number Publication date
TWI497229B (zh) 2015-08-21
CN102955376B (zh) 2015-12-16
TW201316132A (zh) 2013-04-16
JP5521012B2 (ja) 2014-06-11
US8823921B2 (en) 2014-09-02
JP2013048237A (ja) 2013-03-07
SG188038A1 (en) 2013-03-28
US20130044301A1 (en) 2013-02-21
CN102955376A (zh) 2013-03-06
KR20130020876A (ko) 2013-03-04

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