SG10201502125VA - Systems for cooling rf heated chamber components - Google Patents

Systems for cooling rf heated chamber components

Info

Publication number
SG10201502125VA
SG10201502125VA SG10201502125VA SG10201502125VA SG10201502125VA SG 10201502125V A SG10201502125V A SG 10201502125VA SG 10201502125V A SG10201502125V A SG 10201502125VA SG 10201502125V A SG10201502125V A SG 10201502125VA SG 10201502125V A SG10201502125V A SG 10201502125VA
Authority
SG
Singapore
Prior art keywords
cooling
systems
heated chamber
chamber components
heated
Prior art date
Application number
SG10201502125VA
Inventor
Mcchesney Jon
Sriraman Saravanapriyan
Marsh Ricky
Paterson Alex
Holland John
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201502125VA publication Critical patent/SG10201502125VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
SG10201502125VA 2011-10-07 2012-09-03 Systems for cooling rf heated chamber components SG10201502125VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161544799P 2011-10-07 2011-10-07
US13/292,649 US9978565B2 (en) 2011-10-07 2011-11-09 Systems for cooling RF heated chamber components

Publications (1)

Publication Number Publication Date
SG10201502125VA true SG10201502125VA (en) 2015-08-28

Family

ID=48041302

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2012065686A SG189611A1 (en) 2011-10-07 2012-09-03 Systems for cooling rf heated chamber components
SG10201502125VA SG10201502125VA (en) 2011-10-07 2012-09-03 Systems for cooling rf heated chamber components

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2012065686A SG189611A1 (en) 2011-10-07 2012-09-03 Systems for cooling rf heated chamber components

Country Status (4)

Country Link
US (4) US9978565B2 (en)
KR (2) KR20130038155A (en)
SG (2) SG189611A1 (en)
TW (1) TWI526123B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9978565B2 (en) 2011-10-07 2018-05-22 Lam Research Corporation Systems for cooling RF heated chamber components
CN104425197B (en) * 2013-08-23 2017-09-15 中微半导体设备(上海)有限公司 A kind of apparatus for processing plasma and its board outer cover
KR102262657B1 (en) * 2014-10-13 2021-06-08 삼성전자주식회사 Plasma processing device
KR20160085097A (en) 2015-01-07 2016-07-15 대한민국(농촌진흥청장) Composition for suppression of cancer metastasis containing cycloartenyl ferulate
CN108695148B (en) * 2017-04-12 2021-07-09 北京北方华创微电子装备有限公司 Temperature control device of dielectric window and reaction chamber applying same
US11538666B2 (en) * 2017-11-15 2022-12-27 Lam Research Corporation Multi-zone cooling of plasma heated window
KR20190071520A (en) 2017-12-14 2019-06-24 이재섭 Window heating system
KR102606056B1 (en) * 2019-04-08 2023-11-23 램 리써치 코포레이션 Plasma-based reactor cooling
US20220113198A1 (en) * 2020-10-14 2022-04-14 Applied Materials, Inc. Advanced temperature monitoring system with expandable modular layout design
CN112820616B (en) 2021-01-18 2024-04-12 北京北方华创微电子装备有限公司 Semiconductor process chamber

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US6024826A (en) 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
TW293983B (en) * 1993-12-17 1996-12-21 Tokyo Electron Co Ltd
JP3553688B2 (en) 1995-05-10 2004-08-11 アネルバ株式会社 Plasma processing apparatus and plasma processing method
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
EP1143036A3 (en) 1996-05-21 2001-11-28 Applied Materials, Inc. Apparatus and method for controlling the temperature of a wall of a reaction chamber
KR100493903B1 (en) 1996-06-05 2005-09-02 램 리서치 코포레이션 Temperature control method and apparatus for plasma processing chamber
US5863376A (en) * 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5944899A (en) 1996-08-22 1999-08-31 Applied Materials, Inc. Inductively coupled plasma processing chamber
US6059922A (en) * 1996-11-08 2000-05-09 Kabushiki Kaisha Toshiba Plasma processing apparatus and a plasma processing method
US6367410B1 (en) * 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
TW447029B (en) 1997-10-08 2001-07-21 Applied Materials Inc Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
US6280563B1 (en) 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6189484B1 (en) 1999-03-05 2001-02-20 Applied Materials Inc. Plasma reactor having a helicon wave high density plasma source
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
US6243966B1 (en) 1999-12-10 2001-06-12 Applied Materials, Inc. Air amplifier with uniform output flow pattern
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6685798B1 (en) * 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
JP4136630B2 (en) * 2002-12-03 2008-08-20 キヤノン株式会社 Plasma processing equipment
KR101007822B1 (en) 2003-07-14 2011-01-13 주성엔지니어링(주) Apparatus of hybrid coupled plasma
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JP4906425B2 (en) * 2006-07-26 2012-03-28 株式会社日立ハイテクノロジーズ Plasma processing equipment
US8046989B2 (en) 2007-11-14 2011-11-01 Paccar Inc Cooling device for high temperature exhaust
CN103258729B (en) * 2007-12-21 2016-07-06 朗姆研究公司 The manufacture of silicon structure and the deep silicon etch with morphology control
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JP5705723B2 (en) 2008-05-09 2015-04-22 テル エフエスアイ インコーポレイテッド Tools and methods for processing microelectronic workpieces using a processing chamber design that easily switches between open and closed modes in operation
KR101170006B1 (en) 2008-07-04 2012-07-31 도쿄엘렉트론가부시키가이샤 Plasma processing device, plasma processing method, and mechanism for regulating temperature of dielectric window
CN101409227A (en) 2008-10-30 2009-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma treatment system as well as cooling device and method thereof
US9978565B2 (en) 2011-10-07 2018-05-22 Lam Research Corporation Systems for cooling RF heated chamber components

Also Published As

Publication number Publication date
US20130087283A1 (en) 2013-04-11
US11887819B2 (en) 2024-01-30
TWI526123B (en) 2016-03-11
TW201322832A (en) 2013-06-01
US11495441B2 (en) 2022-11-08
US9978565B2 (en) 2018-05-22
US20180247796A1 (en) 2018-08-30
US20230039721A1 (en) 2023-02-09
US20210050188A1 (en) 2021-02-18
US10825661B2 (en) 2020-11-03
KR20130038155A (en) 2013-04-17
SG189611A1 (en) 2013-05-31
KR101526129B1 (en) 2015-06-04
KR20150005503A (en) 2015-01-14

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