SG10201501149PA - Deep silicon etching device and gas intake system for deep silicon etching device - Google Patents

Deep silicon etching device and gas intake system for deep silicon etching device

Info

Publication number
SG10201501149PA
SG10201501149PA SG10201501149PA SG10201501149PA SG10201501149PA SG 10201501149P A SG10201501149P A SG 10201501149PA SG 10201501149P A SG10201501149P A SG 10201501149PA SG 10201501149P A SG10201501149P A SG 10201501149PA SG 10201501149P A SG10201501149P A SG 10201501149PA
Authority
SG
Singapore
Prior art keywords
etching device
silicon etching
deep silicon
intake system
gas intake
Prior art date
Application number
SG10201501149PA
Other languages
English (en)
Inventor
Yang Zhou
Original Assignee
Beijing Nmc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Nmc Co Ltd filed Critical Beijing Nmc Co Ltd
Publication of SG10201501149PA publication Critical patent/SG10201501149PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
SG10201501149PA 2009-08-27 2010-08-19 Deep silicon etching device and gas intake system for deep silicon etching device SG10201501149PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009100918563A CN101643904B (zh) 2009-08-27 2009-08-27 深硅刻蚀装置和深硅刻蚀设备的进气系统

Publications (1)

Publication Number Publication Date
SG10201501149PA true SG10201501149PA (en) 2015-04-29

Family

ID=41655961

Family Applications (2)

Application Number Title Priority Date Filing Date
SG2011085446A SG176166A1 (en) 2009-08-27 2010-08-19 Deep silicon etching device and gas intake system for deep silicon etching device
SG10201501149PA SG10201501149PA (en) 2009-08-27 2010-08-19 Deep silicon etching device and gas intake system for deep silicon etching device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG2011085446A SG176166A1 (en) 2009-08-27 2010-08-19 Deep silicon etching device and gas intake system for deep silicon etching device

Country Status (5)

Country Link
US (1) US20120138228A1 (ko)
KR (1) KR101322545B1 (ko)
CN (1) CN101643904B (ko)
SG (2) SG176166A1 (ko)
WO (1) WO2011023078A1 (ko)

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EP2572003A4 (en) 2010-05-18 2016-01-13 Natera Inc METHOD FOR NONINVASIVE PRANATAL PLOIDIE ASSIGNMENT
US20190010543A1 (en) 2010-05-18 2019-01-10 Natera, Inc. Methods for simultaneous amplification of target loci
US10316362B2 (en) 2010-05-18 2019-06-11 Natera, Inc. Methods for simultaneous amplification of target loci
US11322224B2 (en) 2010-05-18 2022-05-03 Natera, Inc. Methods for non-invasive prenatal ploidy calling
US9677118B2 (en) 2014-04-21 2017-06-13 Natera, Inc. Methods for simultaneous amplification of target loci
US11339429B2 (en) 2010-05-18 2022-05-24 Natera, Inc. Methods for non-invasive prenatal ploidy calling
US11939634B2 (en) 2010-05-18 2024-03-26 Natera, Inc. Methods for simultaneous amplification of target loci
US11326208B2 (en) 2010-05-18 2022-05-10 Natera, Inc. Methods for nested PCR amplification of cell-free DNA
US11332793B2 (en) 2010-05-18 2022-05-17 Natera, Inc. Methods for simultaneous amplification of target loci
US11332785B2 (en) 2010-05-18 2022-05-17 Natera, Inc. Methods for non-invasive prenatal ploidy calling
US11408031B2 (en) 2010-05-18 2022-08-09 Natera, Inc. Methods for non-invasive prenatal paternity testing
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
BR112013020220B1 (pt) 2011-02-09 2020-03-17 Natera, Inc. Método para determinar o estado de ploidia de um cromossomo em um feto em gestação
CN103050434B (zh) * 2011-10-17 2015-09-02 中芯国际集成电路制造(上海)有限公司 硅通孔的刻蚀方法
US20140100126A1 (en) 2012-08-17 2014-04-10 Natera, Inc. Method for Non-Invasive Prenatal Testing Using Parental Mosaicism Data
CN102832096B (zh) * 2012-09-20 2015-11-25 中微半导体设备(上海)有限公司 一种用于真空处理装置的气体供应装置及其气体供应及切换方法
CN103906338B (zh) * 2012-12-31 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体装置
CN103915330B (zh) * 2013-01-09 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法
US9536710B2 (en) * 2013-02-25 2017-01-03 Applied Materials, Inc. Tunable gas delivery assembly with internal diffuser and angular injection
CN104743496B (zh) * 2013-12-29 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 深硅刻蚀方法和用于深硅刻蚀的设备
AU2015249846B2 (en) 2014-04-21 2021-07-22 Natera, Inc. Detecting mutations and ploidy in chromosomal segments
CN104609365B (zh) * 2015-02-14 2016-12-07 苏州工业园区纳米产业技术研究院有限公司 深硅刻蚀机台及其晶片保护装置
EP4428863A2 (en) 2015-05-11 2024-09-11 Natera, Inc. Methods and compositions for determining ploidy
US11485996B2 (en) 2016-10-04 2022-11-01 Natera, Inc. Methods for characterizing copy number variation using proximity-litigation sequencing
US10011870B2 (en) 2016-12-07 2018-07-03 Natera, Inc. Compositions and methods for identifying nucleic acid molecules
WO2019118926A1 (en) 2017-12-14 2019-06-20 Tai Diagnostics, Inc. Assessing graft suitability for transplantation
EP3781714A1 (en) 2018-04-14 2021-02-24 Natera, Inc. Methods for cancer detection and monitoring by means of personalized detection of circulating tumor dna
US11525159B2 (en) 2018-07-03 2022-12-13 Natera, Inc. Methods for detection of donor-derived cell-free DNA
CN113948358B (zh) * 2020-07-17 2024-03-12 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及半导体结构的形成方法
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KR20090006144A (ko) * 2006-04-07 2009-01-14 어플라이드 머티어리얼스, 인코포레이티드 에피택셜막을 형성하는 동안 이용되는 가스 매니폴드들
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CN101643904B (zh) * 2009-08-27 2011-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 深硅刻蚀装置和深硅刻蚀设备的进气系统

Also Published As

Publication number Publication date
WO2011023078A1 (zh) 2011-03-03
KR101322545B1 (ko) 2013-10-28
SG176166A1 (en) 2011-12-29
KR20120091003A (ko) 2012-08-17
CN101643904B (zh) 2011-04-27
CN101643904A (zh) 2010-02-10
US20120138228A1 (en) 2012-06-07

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