SG10201403532QA - Copper bonding wire with angstrom (a) thick surface oxide layer - Google Patents

Copper bonding wire with angstrom (a) thick surface oxide layer

Info

Publication number
SG10201403532QA
SG10201403532QA SG10201403532QA SG10201403532QA SG10201403532QA SG 10201403532Q A SG10201403532Q A SG 10201403532QA SG 10201403532Q A SG10201403532Q A SG 10201403532QA SG 10201403532Q A SG10201403532Q A SG 10201403532QA SG 10201403532Q A SG10201403532Q A SG 10201403532QA
Authority
SG
Singapore
Prior art keywords
angstrom
oxide layer
bonding wire
surface oxide
copper bonding
Prior art date
Application number
SG10201403532QA
Other languages
English (en)
Inventor
Sarangapani Murali
Zhang Xi
Ha Yeung Ping
Milke Eugen
Original Assignee
Heraeus Deutschland Gmbh & Co Kg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Deutschland Gmbh & Co Kg filed Critical Heraeus Deutschland Gmbh & Co Kg
Priority to SG10201403532QA priority Critical patent/SG10201403532QA/en
Priority to US15/320,492 priority patent/US20170154863A1/en
Priority to CN201580034280.0A priority patent/CN106661672B/zh
Priority to PCT/EP2015/063508 priority patent/WO2015197432A1/en
Priority to EP15729467.9A priority patent/EP3158096B1/en
Priority to TW104120028A priority patent/TWI589713B/zh
Publication of SG10201403532QA publication Critical patent/SG10201403532QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/02—Drawing metal wire or like flexible metallic material by drawing machines or apparatus in which the drawing action is effected by drums
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
    • C21D1/76—Adjusting the composition of the atmosphere
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
    • C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
    • C21D9/525—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length for wire, for rods
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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SG10201403532QA 2014-06-23 2014-06-23 Copper bonding wire with angstrom (a) thick surface oxide layer SG10201403532QA (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SG10201403532QA SG10201403532QA (en) 2014-06-23 2014-06-23 Copper bonding wire with angstrom (a) thick surface oxide layer
US15/320,492 US20170154863A1 (en) 2014-06-23 2015-06-17 Copper bonding wire with angstrom (å) thick surface oxide layer
CN201580034280.0A CN106661672B (zh) 2014-06-23 2015-06-17 具有埃厚的表面氧化物层的铜键合丝
PCT/EP2015/063508 WO2015197432A1 (en) 2014-06-23 2015-06-17 Copper bonding wire with angstrom (å) thick surface oxide layer
EP15729467.9A EP3158096B1 (en) 2014-06-23 2015-06-17 Copper bonding wire with angstrom (å) thick surface oxide layer
TW104120028A TWI589713B (zh) 2014-06-23 2015-06-22 具埃（å）級表面氧化層厚度之銅接合線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG10201403532QA SG10201403532QA (en) 2014-06-23 2014-06-23 Copper bonding wire with angstrom (a) thick surface oxide layer

Publications (1)

Publication Number Publication Date
SG10201403532QA true SG10201403532QA (en) 2016-01-28

Family

ID=53404562

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201403532QA SG10201403532QA (en) 2014-06-23 2014-06-23 Copper bonding wire with angstrom (a) thick surface oxide layer

Country Status (6)

Country Link
US (1) US20170154863A1 (zh)
EP (1) EP3158096B1 (zh)
CN (1) CN106661672B (zh)
SG (1) SG10201403532QA (zh)
TW (1) TWI589713B (zh)
WO (1) WO2015197432A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6600121B2 (ja) * 2017-08-09 2019-10-30 日鉄ケミカル＆マテリアル株式会社 半導体装置用Ｃｕ合金ボンディングワイヤ
CN109811183A (zh) * 2019-03-27 2019-05-28 广东迪奥应用材料科技有限公司 一种用于制备高导电率薄膜的铜基合金及溅射靶材
CN112139278B (zh) * 2020-08-19 2022-05-31 浙江万胜运河钢缆有限公司 一种镀锌钢缆钢丝表面清洁平直工艺

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3918397B2 (ja) * 2000-04-11 2007-05-23 三菱マテリアル株式会社 耐密着性無酸素銅荒引線、その製造方法及び製造装置
MY147995A (en) * 2008-01-25 2013-02-28 Nippon Steel & Sumikin Mat Co Bonding wire semiconductor device
JP2010245390A (ja) * 2009-04-08 2010-10-28 Tatsuta Electric Wire & Cable Co Ltd ボンディングワイヤ
JP4860004B1 (ja) * 2011-02-28 2012-01-25 タツタ電線株式会社 ボンディングワイヤ及びその製造方法
JP5219316B1 (ja) * 2012-09-28 2013-06-26 田中電子工業株式会社 半導体装置接続用銅白金合金細線

Also Published As

Publication number Publication date
WO2015197432A1 (en) 2015-12-30
CN106661672A (zh) 2017-05-10
TWI589713B (zh) 2017-07-01
EP3158096B1 (en) 2018-10-10
US20170154863A1 (en) 2017-06-01
CN106661672B (zh) 2018-09-18
TW201615851A (zh) 2016-05-01
EP3158096A1 (en) 2017-04-26

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