SE9803285L - Avstämbar laser jämte förfarande att avstämm densamma - Google Patents

Avstämbar laser jämte förfarande att avstämm densamma

Info

Publication number
SE9803285L
SE9803285L SE9803285A SE9803285A SE9803285L SE 9803285 L SE9803285 L SE 9803285L SE 9803285 A SE9803285 A SE 9803285A SE 9803285 A SE9803285 A SE 9803285A SE 9803285 L SE9803285 L SE 9803285L
Authority
SE
Sweden
Prior art keywords
filter
tuneable
tuning
same
tunable laser
Prior art date
Application number
SE9803285A
Other languages
English (en)
Swedish (sv)
Other versions
SE9803285D0 (sv
Inventor
Pierre-Jean Rigole
Original Assignee
Imc Ind Mikroelektronikcentrum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imc Ind Mikroelektronikcentrum filed Critical Imc Ind Mikroelektronikcentrum
Priority to SE9803285A priority Critical patent/SE9803285L/xx
Publication of SE9803285D0 publication Critical patent/SE9803285D0/xx
Priority to CA002344536A priority patent/CA2344536A1/en
Priority to JP2000576517A priority patent/JP2002527911A/ja
Priority to EP99970515A priority patent/EP1118145B1/en
Priority to AT99970515T priority patent/ATE230170T1/de
Priority to DE69904624T priority patent/DE69904624D1/de
Priority to AU11942/00A priority patent/AU1194200A/en
Priority to PCT/SE1999/001715 priority patent/WO2000022705A1/en
Priority to CN99812677.2A priority patent/CN1324505A/zh
Publication of SE9803285L publication Critical patent/SE9803285L/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
SE9803285A 1998-09-28 1998-09-28 Avstämbar laser jämte förfarande att avstämm densamma SE9803285L (sv)

Priority Applications (9)

Application Number Priority Date Filing Date Title
SE9803285A SE9803285L (sv) 1998-09-28 1998-09-28 Avstämbar laser jämte förfarande att avstämm densamma
CA002344536A CA2344536A1 (en) 1998-09-28 1999-09-28 A tuneable laser and a method of tuning the same
JP2000576517A JP2002527911A (ja) 1998-09-28 1999-09-28 同調可能なレーザおよびその同調の方法
EP99970515A EP1118145B1 (en) 1998-09-28 1999-09-28 Tuneable laser and method of tuning the same
AT99970515T ATE230170T1 (de) 1998-09-28 1999-09-28 Abstimmbarer laser und verfahren zu dessen abstimmung
DE69904624T DE69904624D1 (de) 1998-09-28 1999-09-28 Abstimmbarer laser und verfahren zu dessen abstimmung
AU11942/00A AU1194200A (en) 1998-09-28 1999-09-28 A tuneable laser and a method of tuning the same
PCT/SE1999/001715 WO2000022705A1 (en) 1998-09-28 1999-09-28 A tuneable laser and a method of tuning the same
CN99812677.2A CN1324505A (zh) 1998-09-28 1999-09-28 可调谐激光器及其调谐方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9803285A SE9803285L (sv) 1998-09-28 1998-09-28 Avstämbar laser jämte förfarande att avstämm densamma

Publications (2)

Publication Number Publication Date
SE9803285D0 SE9803285D0 (sv) 1998-09-28
SE9803285L true SE9803285L (sv) 2000-03-29

Family

ID=20412744

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9803285A SE9803285L (sv) 1998-09-28 1998-09-28 Avstämbar laser jämte förfarande att avstämm densamma

Country Status (9)

Country Link
EP (1) EP1118145B1 (xx)
JP (1) JP2002527911A (xx)
CN (1) CN1324505A (xx)
AT (1) ATE230170T1 (xx)
AU (1) AU1194200A (xx)
CA (1) CA2344536A1 (xx)
DE (1) DE69904624D1 (xx)
SE (1) SE9803285L (xx)
WO (1) WO2000022705A1 (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130709A2 (en) * 2000-01-20 2001-09-05 Cyoptics (Israel) Ltd. Monitoring of optical radiation in semiconductor devices
JP2001320127A (ja) * 2000-05-02 2001-11-16 Sumitomo Electric Ind Ltd 半導体レーザ
FR2821495B1 (fr) 2001-02-23 2004-08-27 Cit Alcatel Laser accordable de facon rapide et large
US20020136258A1 (en) * 2001-03-20 2002-09-26 Starodubov Dmitry S. Semiconductor laser pump locker incorporating multiple gratings
FR2831005B1 (fr) * 2001-10-15 2004-04-30 Cit Alcatel Generateur de breves impulsions optiques
JP2005303077A (ja) * 2004-04-13 2005-10-27 Fujitsu Ltd 波長可変レーザ装置
US9106050B2 (en) * 2011-10-17 2015-08-11 Futurewei Technologies, Inc. Self-characterization tunable optical network unit
FR3015135B1 (fr) * 2013-12-13 2017-05-19 Thales Sa Source laser a largeur de raies reduite
EP3444634B1 (en) * 2017-08-17 2024-05-01 ams AG Semiconductor device and method for time-of-flight measurements
CN112186502A (zh) * 2020-09-30 2021-01-05 武汉光迅科技股份有限公司 一种窄线宽半导体外腔激光器及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4955028A (en) * 1988-03-25 1990-09-04 At&T Bell Laboratories Wavelength tunable composite cavity laser
US5305336A (en) * 1992-01-29 1994-04-19 At&T Bell Laboratories Compact optical pulse source
JPH06112583A (ja) * 1992-09-25 1994-04-22 Ando Electric Co Ltd 外部共振器型半導体レーザ光源
US5463647A (en) * 1993-02-25 1995-10-31 The United States Of America As Represented By The Secretary Of The Air Force Broadband multi-wavelength narrow linewidth laser source using an electro-optic modulator
US5828688A (en) * 1995-10-26 1998-10-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for linewidth reduction in distributed feedback or distributed bragg reflector semiconductor lasers using vertical emission

Also Published As

Publication number Publication date
CA2344536A1 (en) 2000-04-20
SE9803285D0 (sv) 1998-09-28
JP2002527911A (ja) 2002-08-27
DE69904624D1 (de) 2003-01-30
EP1118145A1 (en) 2001-07-25
WO2000022705A1 (en) 2000-04-20
ATE230170T1 (de) 2003-01-15
CN1324505A (zh) 2001-11-28
AU1194200A (en) 2000-05-01
EP1118145B1 (en) 2002-12-18

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Legal Events

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