SE9702346L - Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning - Google Patents

Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning

Info

Publication number
SE9702346L
SE9702346L SE9702346A SE9702346A SE9702346L SE 9702346 L SE9702346 L SE 9702346L SE 9702346 A SE9702346 A SE 9702346A SE 9702346 A SE9702346 A SE 9702346A SE 9702346 L SE9702346 L SE 9702346L
Authority
SE
Sweden
Prior art keywords
silicon
particles
layer
substrate material
high frequency
Prior art date
Application number
SE9702346A
Other languages
English (en)
Other versions
SE9702346D0 (sv
SE511721C2 (sv
Inventor
Andrej Litwin
Anders Soederbaerg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9702346A priority Critical patent/SE511721C2/sv
Publication of SE9702346D0 publication Critical patent/SE9702346D0/sv
Priority to PCT/SE1998/001178 priority patent/WO1998058404A2/en
Priority to KR10-1999-7011963A priority patent/KR100510582B1/ko
Priority to CN988061139A priority patent/CN1132226C/zh
Priority to EP98928804A priority patent/EP0990263A2/en
Priority to AU80512/98A priority patent/AU8051298A/en
Priority to US09/098,515 priority patent/US6183857B1/en
Priority to CA002294290A priority patent/CA2294290A1/en
Priority to JP50430099A priority patent/JP2002503398A/ja
Priority to TW087109782A priority patent/TW406380B/zh
Publication of SE9702346L publication Critical patent/SE9702346L/sv
Publication of SE511721C2 publication Critical patent/SE511721C2/sv
Priority to US09/737,263 priority patent/US6475926B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/259—Silicic material
SE9702346A 1997-06-18 1997-06-18 Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning SE511721C2 (sv)

Priority Applications (11)

Application Number Priority Date Filing Date Title
SE9702346A SE511721C2 (sv) 1997-06-18 1997-06-18 Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning
JP50430099A JP2002503398A (ja) 1997-06-18 1998-06-17 高周波集積回路用基板
EP98928804A EP0990263A2 (en) 1997-06-18 1998-06-17 A substrate for high frequency integrated circuits
KR10-1999-7011963A KR100510582B1 (ko) 1997-06-18 1998-06-17 고주파 집적회로용 기판
CN988061139A CN1132226C (zh) 1997-06-18 1998-06-17 用于高频集成电路的衬底
PCT/SE1998/001178 WO1998058404A2 (en) 1997-06-18 1998-06-17 A substrate for high frequency integrated circuits
AU80512/98A AU8051298A (en) 1997-06-18 1998-06-17 A substrate for high frequency integrated circuits
US09/098,515 US6183857B1 (en) 1997-06-18 1998-06-17 Substrate for high frequency integrated circuits
CA002294290A CA2294290A1 (en) 1997-06-18 1998-06-17 A substrate for high frequency integrated circuits
TW087109782A TW406380B (en) 1997-06-18 1998-06-18 A substrate for high frequency integrated circuits
US09/737,263 US6475926B2 (en) 1997-06-18 2000-12-13 Substrate for high frequency integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9702346A SE511721C2 (sv) 1997-06-18 1997-06-18 Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning

Publications (3)

Publication Number Publication Date
SE9702346D0 SE9702346D0 (sv) 1997-06-18
SE9702346L true SE9702346L (sv) 1998-12-19
SE511721C2 SE511721C2 (sv) 1999-11-15

Family

ID=20407433

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9702346A SE511721C2 (sv) 1997-06-18 1997-06-18 Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning

Country Status (10)

Country Link
US (2) US6183857B1 (sv)
EP (1) EP0990263A2 (sv)
JP (1) JP2002503398A (sv)
KR (1) KR100510582B1 (sv)
CN (1) CN1132226C (sv)
AU (1) AU8051298A (sv)
CA (1) CA2294290A1 (sv)
SE (1) SE511721C2 (sv)
TW (1) TW406380B (sv)
WO (1) WO1998058404A2 (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423614B1 (en) * 1998-06-30 2002-07-23 Intel Corporation Method of delaminating a thin film using non-thermal techniques
US6463656B1 (en) * 2000-06-29 2002-10-15 Eastman Kodak Company Laminate and gasket manfold for ink jet delivery systems and similar devices
DE10134900B4 (de) * 2001-07-18 2007-03-15 Infineon Technologies Ag Haltevorrichtung mit Diffusionssperrschicht für Halbleitereinrichtungen
US6743662B2 (en) * 2002-07-01 2004-06-01 Honeywell International, Inc. Silicon-on-insulator wafer for RF integrated circuit
US7155746B2 (en) * 2002-12-27 2007-01-02 Kimberly-Clark Worldwide, Inc. Anti-wicking protective workwear and methods of making and using same
KR100539274B1 (ko) * 2003-07-15 2005-12-27 삼성전자주식회사 코발트 막 증착 방법
US7419915B2 (en) * 2005-02-17 2008-09-02 The Aerospace Corporation Laser assisted chemical etching method for release microscale and nanoscale devices
US7371662B2 (en) * 2006-03-21 2008-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a 3D interconnect and resulting structures
GB0717997D0 (en) * 2007-09-14 2007-10-24 Isis Innovation Substrate for high frequency integrated circuit
US8129817B2 (en) * 2008-12-31 2012-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing high-frequency signal loss in substrates
CN106711027B (zh) * 2017-02-13 2021-01-05 中国科学院上海微系统与信息技术研究所 晶圆键合方法及异质衬底制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901121A (en) * 1985-03-29 1990-02-13 American Telephone & Telegraph Co., At&T Bell Labs. Semiconductor device comprising a perforated metal silicide layer
US4827324A (en) * 1986-11-06 1989-05-02 Siliconix Incorporated Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage
US5387555A (en) 1992-09-03 1995-02-07 Harris Corporation Bonded wafer processing with metal silicidation
US5344793A (en) * 1993-03-05 1994-09-06 Siemens Aktiengesellschaft Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation
JPH07263721A (ja) * 1994-03-25 1995-10-13 Nippondenso Co Ltd 半導体装置及びその製造方法
US5449642A (en) * 1994-04-14 1995-09-12 Duke University Method of forming metal-disilicide layers and contacts
US5605865A (en) * 1995-04-03 1997-02-25 Motorola Inc. Method for forming self-aligned silicide in a semiconductor device using vapor phase reaction
US5773151A (en) * 1995-06-30 1998-06-30 Harris Corporation Semi-insulating wafer
WO1997011498A1 (en) * 1995-09-18 1997-03-27 Philips Electronics N.V. A varicap diode and method of manufacturing a varicap diode

Also Published As

Publication number Publication date
SE9702346D0 (sv) 1997-06-18
CN1260906A (zh) 2000-07-19
JP2002503398A (ja) 2002-01-29
US6183857B1 (en) 2001-02-06
WO1998058404A2 (en) 1998-12-23
SE511721C2 (sv) 1999-11-15
US6475926B2 (en) 2002-11-05
TW406380B (en) 2000-09-21
KR20010013941A (ko) 2001-02-26
WO1998058404A3 (en) 1999-03-11
EP0990263A2 (en) 2000-04-05
AU8051298A (en) 1999-01-04
US20010001045A1 (en) 2001-05-10
CN1132226C (zh) 2003-12-24
CA2294290A1 (en) 1998-12-23
KR100510582B1 (ko) 2005-08-26

Similar Documents

Publication Publication Date Title
SG125932A1 (en) Method of forming strained silicon on insulator substrate
US6323109B1 (en) Laminated SOI substrate and producing method thereof
US6184111B1 (en) Pre-semiconductor process implant and post-process film separation
US6321134B1 (en) Clustertool system software using plasma immersion ion implantation
US7052978B2 (en) Arrangements incorporating laser-induced cleaving
US7674687B2 (en) Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US7498245B2 (en) Embrittled substrate and method for making same
SE9702346L (sv) Substrat för integrerade högfrekvenskretsar samt förfarande för substratframställning
US20060205178A1 (en) Creation of high mobility channels in thin-body SOI devices
TW200625688A (en) Method of manufacturing carrier wafer and resulting carrier wafer structures
FR2828762B1 (fr) Procede d'obtention d'une couche mince d'un materiau semi-conducteur supportant au moins un composant et/ou circuit electronique
WO2005086226A8 (fr) Traitement thermique d’amelioration de la qualite d’une couche mince prelevee
WO2001006546A3 (en) Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration
FR2817395B1 (fr) Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
TW200511578A (en) Self-aligned SOI with different crystal orientation using wafer bonding and simox processes
WO2005050711A3 (en) A method for fabricating semiconductor devices using strained silicon bearing material
US8822318B2 (en) Doping of semiconductor substrate through carbonless phosphorous-containing layer
AU2003247130A1 (en) Method of transferring of a layer of strained semiconductor material
EP0969505A3 (en) SOI substrate
EP0936675A3 (en) C-axis oriented thin film ferroelectric transistor memory cell and method of making the same
EP1045435A3 (en) Chemical vapor deposition of Pb5Ge3O11 thin film for ferroelectric applications
US9245943B2 (en) Semiconductor body with strained monocrystalline region
TW200610010A (en) Plasma treatment method for electromigration reduction
JPH11330438A (ja) Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
US20150243548A1 (en) Control of FET Back-Channel Interface Characteristics

Legal Events

Date Code Title Description
NUG Patent has lapsed