SE9503879L - Lysdiod med uppdelat ljusemitterande område - Google Patents

Lysdiod med uppdelat ljusemitterande område

Info

Publication number
SE9503879L
SE9503879L SE9503879A SE9503879A SE9503879L SE 9503879 L SE9503879 L SE 9503879L SE 9503879 A SE9503879 A SE 9503879A SE 9503879 A SE9503879 A SE 9503879A SE 9503879 L SE9503879 L SE 9503879L
Authority
SE
Sweden
Prior art keywords
led
semiconducting material
light emitting
emitting area
light
Prior art date
Application number
SE9503879A
Other languages
English (en)
Swedish (sv)
Other versions
SE509809C2 (sv
SE9503879D0 (sv
Inventor
Hans Nettelbladt
Michael Widman
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9503879A priority Critical patent/SE509809C2/sv
Publication of SE9503879D0 publication Critical patent/SE9503879D0/xx
Priority to CA002212624A priority patent/CA2212624A1/en
Priority to PCT/SE1996/001392 priority patent/WO1997016855A1/en
Priority to US08/875,362 priority patent/US6215132B1/en
Priority to DE69618341T priority patent/DE69618341T2/de
Priority to EP96937624A priority patent/EP0801818B1/en
Publication of SE9503879L publication Critical patent/SE9503879L/xx
Publication of SE509809C2 publication Critical patent/SE509809C2/sv

Links

Classifications

    • H10P30/206—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H10P30/208—

Landscapes

  • Led Devices (AREA)
SE9503879A 1995-11-03 1995-11-03 Lysdiod med uppdelat ljusemitterande område SE509809C2 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9503879A SE509809C2 (sv) 1995-11-03 1995-11-03 Lysdiod med uppdelat ljusemitterande område
CA002212624A CA2212624A1 (en) 1995-11-03 1996-10-30 Light-emitting diode with divided light-emitting region
PCT/SE1996/001392 WO1997016855A1 (en) 1995-11-03 1996-10-30 Light-emitting diode with divided light-emitting region
US08/875,362 US6215132B1 (en) 1995-11-03 1996-10-30 Light-emitting diode with divided light-emitting region
DE69618341T DE69618341T2 (de) 1995-11-03 1996-10-30 Leuchtdiode mit getrennten Licht emittierenden Zonen
EP96937624A EP0801818B1 (en) 1995-11-03 1996-10-30 Light-emitting diode with divided light-emitting regions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9503879A SE509809C2 (sv) 1995-11-03 1995-11-03 Lysdiod med uppdelat ljusemitterande område

Publications (3)

Publication Number Publication Date
SE9503879D0 SE9503879D0 (sv) 1995-11-03
SE9503879L true SE9503879L (sv) 1997-05-04
SE509809C2 SE509809C2 (sv) 1999-03-08

Family

ID=20400065

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9503879A SE509809C2 (sv) 1995-11-03 1995-11-03 Lysdiod med uppdelat ljusemitterande område

Country Status (6)

Country Link
US (1) US6215132B1 (xx)
EP (1) EP0801818B1 (xx)
CA (1) CA2212624A1 (xx)
DE (1) DE69618341T2 (xx)
SE (1) SE509809C2 (xx)
WO (1) WO1997016855A1 (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768753B2 (en) * 2002-05-22 2004-07-27 Spectra Physics Reliable diode laser stack
US20070012240A1 (en) * 2005-07-13 2007-01-18 Sia Chin H Light emitting diode with at least two light emitting zones and method for manufacture
CN101842736A (zh) * 2007-08-08 2010-09-22 新加坡科技研究局 电光设备及其制备方法
DE102017126446A1 (de) * 2017-11-10 2019-05-16 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2080849A6 (xx) * 1970-02-06 1971-11-26 Radiotechnique Compelec
US4080617A (en) * 1976-06-09 1978-03-21 Northern Telecom Limited Optoelectronic devices with control of light propagation
FR2573897B1 (fr) * 1984-11-23 1987-03-20 Radiotechnique Compelec Matrice de diodes electroluminescentes et son procede de fabrication
US4956683A (en) * 1988-03-14 1990-09-11 Polaroid Corporation Isolation of p-n junctions
FR2649537B1 (fr) * 1989-07-04 1991-10-11 Philips Electronique Lab Dispositif optoelectronique integre incluant une diode photoluminescente
US4979002A (en) * 1989-09-08 1990-12-18 University Of Colorado Foundation, Inc. Optical photodiode switch array with zener diode
FR2656955B1 (fr) * 1990-01-10 1996-12-13 France Etat Structure a semiconducteurs pour composant optoelectronique.
US5216263A (en) * 1990-11-29 1993-06-01 Xerox Corporation High density, independently addressable, surface emitting semiconductor laser-light emitting diode arrays
JPH04225577A (ja) * 1990-12-27 1992-08-14 Eastman Kodak Japan Kk 発光ダイオード
SE468410B (sv) 1991-05-08 1993-01-11 Asea Brown Boveri Ytlysande lysdiod
SE501635C2 (sv) 1993-08-20 1995-04-03 Asea Brown Boveri Förfarande och anordning för utsändande av ljus med integrerad excitationskälla
US5804461A (en) * 1994-12-22 1998-09-08 Polaroid Corporation Laser diode with an ion-implant region

Also Published As

Publication number Publication date
SE509809C2 (sv) 1999-03-08
WO1997016855A1 (en) 1997-05-09
DE69618341D1 (de) 2002-02-07
US6215132B1 (en) 2001-04-10
EP0801818A1 (en) 1997-10-22
DE69618341T2 (de) 2002-08-22
EP0801818B1 (en) 2002-01-02
CA2212624A1 (en) 1997-05-09
SE9503879D0 (sv) 1995-11-03

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Legal Events

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NUG Patent has lapsed