IT1246117B - Procedimento per riscaldare in modo selettivo un film su un substrato. - Google Patents

Procedimento per riscaldare in modo selettivo un film su un substrato.

Info

Publication number
IT1246117B
IT1246117B ITRM910186A ITRM910186A IT1246117B IT 1246117 B IT1246117 B IT 1246117B IT RM910186 A ITRM910186 A IT RM910186A IT RM910186 A ITRM910186 A IT RM910186A IT 1246117 B IT1246117 B IT 1246117B
Authority
IT
Italy
Prior art keywords
substrate
film
selectively heating
procedure
absorbed
Prior art date
Application number
ITRM910186A
Other languages
English (en)
Inventor
Timothy J Stultz
Original Assignee
Peak Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23982021&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1246117(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Peak Systems Inc filed Critical Peak Systems Inc
Publication of ITRM910186A0 publication Critical patent/ITRM910186A0/it
Publication of ITRM910186A1 publication Critical patent/ITRM910186A1/it
Application granted granted Critical
Publication of IT1246117B publication Critical patent/IT1246117B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Procedimento per riscaldare in modo selettivo un film su un substrato, in cui il film ha una caratteristica di assorbimento della luce diversa da quella del substrato. Una struttura costituita dalla combinazione del film e del substrato é illuminata da luce avente un'intensità massima ad una lunghezza limite che è sostanzialmente assorbita dal film e sostanzialmente non assorbita dal substrato.
ITRM910186A 1990-03-23 1991-03-21 Procedimento per riscaldare in modo selettivo un film su un substrato. IT1246117B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/498,670 US5073698A (en) 1990-03-23 1990-03-23 Method for selectively heating a film on a substrate

Publications (3)

Publication Number Publication Date
ITRM910186A0 ITRM910186A0 (it) 1991-03-21
ITRM910186A1 ITRM910186A1 (it) 1992-09-21
IT1246117B true IT1246117B (it) 1994-11-15

Family

ID=23982021

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM910186A IT1246117B (it) 1990-03-23 1991-03-21 Procedimento per riscaldare in modo selettivo un film su un substrato.

Country Status (5)

Country Link
US (1) US5073698A (it)
JP (1) JP3086489B2 (it)
DE (1) DE4109165A1 (it)
IT (1) IT1246117B (it)
NL (1) NL9100518A (it)

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US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
US5234484A (en) * 1992-02-24 1993-08-10 Itt Corporation Method for annealing phosphors applied to surfaces having melting points below the annealing temperature of the phosphor
US5336641A (en) * 1992-03-17 1994-08-09 Aktis Corporation Rapid thermal annealing using thermally conductive overcoat
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
JP3507600B2 (ja) * 1995-10-05 2004-03-15 理想科学工業株式会社 感熱孔版原紙の製版方法並びにそれに用いる感熱孔版原紙及び組成物
US6177127B1 (en) 1995-12-15 2001-01-23 Micron Technology, Inc. Method of monitoring emissivity
US5751896A (en) 1996-02-22 1998-05-12 Micron Technology, Inc. Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition
JPH1086545A (ja) * 1996-09-13 1998-04-07 Riso Kagaku Corp 感熱孔版原紙製版用組成物及び製版方法
US5904566A (en) * 1997-06-09 1999-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Reactive ion etch method for forming vias through nitrogenated silicon oxide layers
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6080965A (en) * 1997-09-18 2000-06-27 Tokyo Electron Limited Single-substrate-heat-treatment apparatus in semiconductor processing system
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US6204483B1 (en) * 1998-07-01 2001-03-20 Intevac, Inc. Heating assembly for rapid thermal processing system
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US20020179589A1 (en) * 2000-02-08 2002-12-05 Yukihiro Morita Lamp annealing device and substrate for a display element
US6376806B2 (en) * 2000-05-09 2002-04-23 Woo Sik Yoo Flash anneal
US6337467B1 (en) 2000-05-09 2002-01-08 Wafermasters, Inc. Lamp based scanning rapid thermal processing
SE0004296D0 (sv) * 2000-11-23 2000-11-23 Gyros Ab Device and method for the controlled heating in micro channel systems
TWI313059B (it) * 2000-12-08 2009-08-01 Sony Corporatio
US7255899B2 (en) 2001-11-12 2007-08-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and heat treatment method of substrate
KR20030052833A (ko) * 2001-12-21 2003-06-27 동부전자 주식회사 반도체 소자 제조방법
US7445382B2 (en) 2001-12-26 2008-11-04 Mattson Technology Canada, Inc. Temperature measurement and heat-treating methods and system
DE60312358T2 (de) 2002-05-17 2007-11-29 Jason E. Berkeley Schripsema Photovoltaisches modul mit einstellbarem kühlkörper und herstellungsverfahren
JP2004031557A (ja) * 2002-06-25 2004-01-29 Ushio Inc 光加熱装置
DE10393962B4 (de) 2002-12-20 2019-03-14 Mattson Technology Inc. Verfahren und Vorrichtung zum Stützen eines Werkstücks und zur Wärmebehandlung des Werkstücks
US20040253839A1 (en) * 2003-06-11 2004-12-16 Tokyo Electron Limited Semiconductor manufacturing apparatus and heat treatment method
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
TWI249588B (en) * 2004-08-11 2006-02-21 Ind Tech Res Inst One kind of cavity apparatus of energy wave reflection device
DE102005010005A1 (de) * 2005-03-04 2006-12-28 Nunner, Dieter Vorrichtung und Verfahren zur Beschichtung von Kleinteilen
WO2008058397A1 (en) 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
CN102089873A (zh) 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
WO2011022648A1 (en) * 2009-08-21 2011-02-24 First Solar, Inc. Pyrometer
JP5559656B2 (ja) * 2010-10-14 2014-07-23 大日本スクリーン製造株式会社 熱処理装置および熱処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2824943A (en) * 1954-06-28 1958-02-25 Myron P Laughlin Bakery product heater
US3249741A (en) * 1963-05-20 1966-05-03 Reflectotherm Inc Apparatus for baking by differential wave lengths
SE8200685L (sv) * 1982-02-05 1983-08-06 Electrolux Ab Med infrarod stralning arbetande hushallsugn
US4665306A (en) * 1985-04-04 1987-05-12 Kimberly-Clark Corporation Apparatus for activating heat shrinkable ribbon on disposable garments and other articles
US4680450A (en) * 1985-07-30 1987-07-14 Kimberly-Clark Corporation Apparatus for controlling the heating of composite materials
US4820906A (en) * 1987-03-13 1989-04-11 Peak Systems, Inc. Long arc lamp for semiconductor heating
US4755654A (en) * 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber

Also Published As

Publication number Publication date
US5073698A (en) 1991-12-17
DE4109165A1 (de) 1991-09-26
ITRM910186A1 (it) 1992-09-21
ITRM910186A0 (it) 1991-03-21
NL9100518A (nl) 1991-10-16
JP3086489B2 (ja) 2000-09-11
JPH0594995A (ja) 1993-04-16

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