SE8604627D0 - FOR SEMICONDUCTOR DEVICE DEVICED SILICONE SUBSTRATE OF HIGH SILICENCE AND PREPARATION KIT FOR THIS - Google Patents

FOR SEMICONDUCTOR DEVICE DEVICED SILICONE SUBSTRATE OF HIGH SILICENCE AND PREPARATION KIT FOR THIS

Info

Publication number
SE8604627D0
SE8604627D0 SE8604627A SE8604627A SE8604627D0 SE 8604627 D0 SE8604627 D0 SE 8604627D0 SE 8604627 A SE8604627 A SE 8604627A SE 8604627 A SE8604627 A SE 8604627A SE 8604627 D0 SE8604627 D0 SE 8604627D0
Authority
SE
Sweden
Prior art keywords
crystal body
silicon
silicon crystal
silicence
deviced
Prior art date
Application number
SE8604627A
Other languages
Swedish (sv)
Other versions
SE8604627L (en
Inventor
T Suzuki
Y Kato
M Futagami
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SE8604627D0 publication Critical patent/SE8604627D0/en
Publication of SE8604627L publication Critical patent/SE8604627L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

A method for producing silicon substrates includes growing the silicon crystal body at a relatively high rate of growth. It has been found that the growth rate of the silicon crystal body exerts substantial influence upon generation of crystal defects in the silicon crystal body or silicon substrate. Furthermore, the oxygen concentration in the silicon crystal body or the silicon substrate is significantly higher than in conventional silicon crystals or substrates. The high growth rate of the silicon crystal body suppresses separation of the oxygen from the crystal body. This reduces the number of defects or faults formed in the crystal body during heat treatment during production of the semiconductor devices. In the preferred process, according to the present invention, the growth rate of the silicon crystal body is greater than or equal to 1.2 mm/min. Furthermore, the preferred oxygen concentration in the grown silicon crystal body is selected to be greater than or equal to 1.8 x 10<18> cm<-3>. <IMAGE>
SE8604627A 1985-10-31 1986-10-30 FOR SEMICONDUCTOR DEVICE DEVICED SILICONE SUBSTRATE OF HIGH SILICENCE AND PREPARATION KIT FOR THIS SE8604627L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60244562A JPS62105998A (en) 1985-10-31 1985-10-31 Production of silicon substrate

Publications (2)

Publication Number Publication Date
SE8604627D0 true SE8604627D0 (en) 1986-10-30
SE8604627L SE8604627L (en) 1987-05-01

Family

ID=17120560

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8604627A SE8604627L (en) 1985-10-31 1986-10-30 FOR SEMICONDUCTOR DEVICE DEVICED SILICONE SUBSTRATE OF HIGH SILICENCE AND PREPARATION KIT FOR THIS

Country Status (14)

Country Link
JP (1) JPS62105998A (en)
KR (1) KR870004498A (en)
CN (1) CN1016191B (en)
AT (1) ATA289086A (en)
AU (1) AU597599B2 (en)
CA (1) CA1336061C (en)
DE (1) DE3637006A1 (en)
DK (1) DK518486A (en)
FR (1) FR2589489B1 (en)
GB (1) GB2182262B (en)
IT (1) IT1198454B (en)
MY (1) MY100449A (en)
NL (1) NL8602738A (en)
SE (1) SE8604627L (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2613498B2 (en) * 1991-03-15 1997-05-28 信越半導体株式会社 Heat treatment method for Si single crystal wafer
JPH07247197A (en) * 1994-03-09 1995-09-26 Fujitsu Ltd Semiconductor device and its production
JP3443822B2 (en) * 1996-03-27 2003-09-08 信越半導体株式会社 Method for producing silicon single crystal
DE19711922A1 (en) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Device and method for pulling a single crystal
MY135749A (en) 1997-04-09 2008-06-30 Memc Electronic Materials Process for producing low defect density, ideal oxygen precipitating silicon
CN1280455C (en) 1997-04-09 2006-10-18 Memc电子材料有限公司 Low defect density silicon
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH11268987A (en) * 1998-03-20 1999-10-05 Shin Etsu Handotai Co Ltd Silicon single crystal and its production
US6328795B2 (en) 1998-06-26 2001-12-11 Memc Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
KR100581305B1 (en) 1998-09-02 2006-05-22 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Silicon on insulator structure from low defect density single crystal silicon
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
KR100622884B1 (en) 1998-10-14 2006-09-12 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Thermally annealed, low defect density single crystal silicon
WO2000022197A1 (en) 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
DE10103691A1 (en) * 2001-01-26 2002-08-08 Crystal Growing Systems Gmbh Electrical energy supply used for an electrical heater for heating a crucible during crystal growing contains a twelve-pulse rectifier
US6846539B2 (en) 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
US8216362B2 (en) 2006-05-19 2012-07-10 Memc Electronic Materials, Inc. Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth
JP5974978B2 (en) 2013-05-29 2016-08-23 信越半導体株式会社 Silicon single crystal manufacturing method
CN105780113B (en) * 2016-03-10 2017-11-28 江西赛维Ldk太阳能高科技有限公司 A kind of method for characterizing crystalline silicon growth interface and the speed of growth
CN112095154B (en) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 Semiconductor crystal growth device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556098A (en) * 1978-10-17 1980-04-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Method and apparatus for producing si single crystal rod
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
GB2084046B (en) * 1980-08-27 1984-07-25 Secr Defence Method and apparatus for crystal growth
CA1191075A (en) * 1980-12-29 1985-07-30 Roger A. Frederick Method for regulating concentration and distribution of oxygen in czochralski grown silicon
NL8102102A (en) * 1981-04-29 1982-11-16 Philips Nv METHOD FOR DRAWING UP A SILICON BAR AND SEMICONDUCTOR DEVICE MADE FROM THE SILICON BAR.
JPH0244799B2 (en) * 1981-10-26 1990-10-05 Sony Corp KETSUSHOSEICHOHOHO
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS6027684A (en) * 1983-07-26 1985-02-12 Fujitsu Ltd Apparatus for producing single crystal
JPS6033289A (en) * 1983-07-29 1985-02-20 Toshiba Corp Preparation of single crystal of silicon
JPS6094722A (en) * 1983-08-16 1985-05-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Silicon wafer
JPS6153187A (en) * 1984-08-24 1986-03-17 Sony Corp Device for growing single crystal
IT1207497B (en) * 1985-05-29 1989-05-25 Montedison Spa MONO CRYSTALS OF GALLIO ARSENIURO WITH LOW DENSITY OF DISLOCATIONS AND HIGH PURITY.

Also Published As

Publication number Publication date
NL8602738A (en) 1987-05-18
CN86106346A (en) 1987-06-17
GB2182262B (en) 1989-09-27
DE3637006A1 (en) 1987-05-07
KR870004498A (en) 1987-05-09
GB2182262A (en) 1987-05-13
FR2589489A1 (en) 1987-05-07
GB8626074D0 (en) 1986-12-03
FR2589489B1 (en) 1994-06-10
SE8604627L (en) 1987-05-01
ATA289086A (en) 1996-01-15
IT8648592A0 (en) 1986-10-28
AU6455086A (en) 1987-05-07
DK518486A (en) 1987-05-01
DK518486D0 (en) 1986-10-30
JPS62105998A (en) 1987-05-16
MY100449A (en) 1990-10-15
CA1336061C (en) 1995-06-27
AU597599B2 (en) 1990-06-07
IT1198454B (en) 1988-12-21
CN1016191B (en) 1992-04-08

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