SE7910189L - Integrerad halvledaranordning - Google Patents

Integrerad halvledaranordning

Info

Publication number
SE7910189L
SE7910189L SE7910189A SE7910189A SE7910189L SE 7910189 L SE7910189 L SE 7910189L SE 7910189 A SE7910189 A SE 7910189A SE 7910189 A SE7910189 A SE 7910189A SE 7910189 L SE7910189 L SE 7910189L
Authority
SE
Sweden
Prior art keywords
substrate
fet
doped
enclaves
enclave
Prior art date
Application number
SE7910189A
Other languages
Unknown language ( )
English (en)
Other versions
SE437200B (sv
Inventor
F Bertotti
M Foroni
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE7910189L publication Critical patent/SE7910189L/sv
Publication of SE437200B publication Critical patent/SE437200B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE7910189A 1978-12-15 1979-12-11 Integrerad halvledaranordning bestaende av minst en unipoler felteffekttransistor av sperrskiktstyp med en p-kanal SE437200B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30894/78A IT1101311B (it) 1978-12-15 1978-12-15 J-fet,canale p,a bassa tensione di pinch-off

Publications (2)

Publication Number Publication Date
SE7910189L true SE7910189L (sv) 1980-06-16
SE437200B SE437200B (sv) 1985-02-11

Family

ID=11232705

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7910189A SE437200B (sv) 1978-12-15 1979-12-11 Integrerad halvledaranordning bestaende av minst en unipoler felteffekttransistor av sperrskiktstyp med en p-kanal

Country Status (7)

Country Link
US (1) US4266233A (sv)
JP (1) JPS55117256A (sv)
DE (1) DE2950452A1 (sv)
FR (1) FR2444340A1 (sv)
GB (1) GB2037078A (sv)
IT (1) IT1101311B (sv)
SE (1) SE437200B (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029350B1 (en) * 1979-11-14 1987-08-05 Fujitsu Limited An output transistor of a ttl device with a means for discharging carriers
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5945699A (en) * 1997-05-13 1999-08-31 Harris Corporation Reduce width, differentially doped vertical JFET device
US6710538B1 (en) * 1998-08-26 2004-03-23 Micron Technology, Inc. Field emission display having reduced power requirements and method
JP4907736B2 (ja) * 2011-02-22 2012-04-04 鹿島建設株式会社 サンゴ礁の造成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
US4170019A (en) * 1977-08-05 1979-10-02 General Electric Company Semiconductor device with variable grid openings for controlling turn-off pattern

Also Published As

Publication number Publication date
IT7830894A0 (it) 1978-12-15
US4266233A (en) 1981-05-05
JPS55117256A (en) 1980-09-09
FR2444340A1 (fr) 1980-07-11
SE437200B (sv) 1985-02-11
IT1101311B (it) 1985-09-28
DE2950452A1 (de) 1980-06-26
GB2037078A (en) 1980-07-02

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