SE7910189L - Integrerad halvledaranordning - Google Patents

Integrerad halvledaranordning

Info

Publication number
SE7910189L
SE7910189L SE7910189A SE7910189A SE7910189L SE 7910189 L SE7910189 L SE 7910189L SE 7910189 A SE7910189 A SE 7910189A SE 7910189 A SE7910189 A SE 7910189A SE 7910189 L SE7910189 L SE 7910189L
Authority
SE
Sweden
Prior art keywords
substrate
fet
doped
enclaves
enclave
Prior art date
Application number
SE7910189A
Other languages
English (en)
Swedish (sv)
Other versions
SE437200B (sv
Inventor
F Bertotti
M Foroni
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE7910189L publication Critical patent/SE7910189L/
Publication of SE437200B publication Critical patent/SE437200B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H01L27/0623—
    • H01L29/8083—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE7910189A 1978-12-15 1979-12-11 Integrerad halvledaranordning bestaende av minst en unipoler felteffekttransistor av sperrskiktstyp med en p-kanal SE437200B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30894/78A IT1101311B (it) 1978-12-15 1978-12-15 J-fet,canale p,a bassa tensione di pinch-off

Publications (2)

Publication Number Publication Date
SE7910189L true SE7910189L (sv) 1980-06-16
SE437200B SE437200B (sv) 1985-02-11

Family

ID=11232705

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7910189A SE437200B (sv) 1978-12-15 1979-12-11 Integrerad halvledaranordning bestaende av minst en unipoler felteffekttransistor av sperrskiktstyp med en p-kanal

Country Status (7)

Country Link
US (1) US4266233A ( )
JP (1) JPS55117256A ( )
DE (1) DE2950452A1 ( )
FR (1) FR2444340A1 ( )
GB (1) GB2037078A ( )
IT (1) IT1101311B ( )
SE (1) SE437200B ( )

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029350B1 (en) * 1979-11-14 1987-08-05 Fujitsu Limited An output transistor of a ttl device with a means for discharging carriers
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5945699A (en) * 1997-05-13 1999-08-31 Harris Corporation Reduce width, differentially doped vertical JFET device
US6710538B1 (en) * 1998-08-26 2004-03-23 Micron Technology, Inc. Field emission display having reduced power requirements and method
JP4907736B2 (ja) * 2011-02-22 2012-04-04 鹿島建設株式会社 サンゴ礁の造成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor
US4095252A (en) * 1976-12-27 1978-06-13 National Semiconductor Corporation Composite jfet-bipolar transistor structure
US4170019A (en) * 1977-08-05 1979-10-02 General Electric Company Semiconductor device with variable grid openings for controlling turn-off pattern

Also Published As

Publication number Publication date
JPS55117256A (en) 1980-09-09
GB2037078A (en) 1980-07-02
US4266233A (en) 1981-05-05
DE2950452A1 (de) 1980-06-26
IT1101311B (it) 1985-09-28
IT7830894A0 (it) 1978-12-15
SE437200B (sv) 1985-02-11
FR2444340A1 (fr) 1980-07-11

Similar Documents

Publication Publication Date Title
GB1511637A (en) Surface channel field-effect transistors
KR930022608A (ko) 파워 vfet 디바이스 및 그 형성 방법
KR860006831A (ko) 실리콘 기판상에 절연 실리콘 영역과 전개효과를 갖도록한 반도체소자의 형성방법
GB1465244A (en) Deep depletion insulated gate field effect transistors
GB847705A (en) Improvements in grain boundary semiconductor devices and methods of making such devices
GB1229946A ( )
GB1246208A (en) Pn junction gated field effect transistor having buried layer
SE7902342L (sv) Halvledaranordning
EP0032700A3 (en) JFET device
SE7910189L (sv) Integrerad halvledaranordning
GB1081368A (en) Improvements in or relating to transistor devices
KR960032771A (ko) 접합 전계 효과 트랜지스터를 갖는 반도체 장치
GB1476790A (en) Semiconductor device including an insulated gate field effect transistor and method for its manufacture
KR880014686A (ko) 게이트 절연층으로 단결정 실리콘 카바이드를 사용하는 반도체 전계효과 트랜지스터
KR930022604A (ko) 반도체 장치
KR960002889A (ko) 반도체 장치 및 그 제조방법
GB1380466A (en) Gate protective device for insulated gate fieldeffect transistors
GB1053428A ( )
SE7906289L (sv) Halvledaranordning
JPS54101680A (en) Semiconductor device
KR840007310A (ko) 반도체 장치 및 그 제조방법
KR900001036A (ko) 분리식 수직형 바이폴라 및 jfet트랜지스터를 제조하기 위한 처리 공정
JPS5598868A (en) Insulated gate type field effect semiconductor device
EP0436038A4 (en) Semiconductor device and method of producing the same
KR880010508A (ko) 반도체장치와 그 제조방법

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7910189-5

Effective date: 19940710

Format of ref document f/p: F