SE7904711L - Lavinfotodiod - Google Patents

Lavinfotodiod

Info

Publication number
SE7904711L
SE7904711L SE7904711A SE7904711A SE7904711L SE 7904711 L SE7904711 L SE 7904711L SE 7904711 A SE7904711 A SE 7904711A SE 7904711 A SE7904711 A SE 7904711A SE 7904711 L SE7904711 L SE 7904711L
Authority
SE
Sweden
Prior art keywords
lavinpotodiod
Prior art date
Application number
SE7904711A
Other languages
English (en)
Other versions
SE417145B (sv
Inventor
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE7904711A priority Critical patent/SE417145B/sv
Publication of SE7904711L publication Critical patent/SE7904711L/sv
Publication of SE417145B publication Critical patent/SE417145B/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
SE7904711A 1979-05-30 1979-05-30 Lavinfotodiodanordning med en lavindiod och med organ for styrning av diodens multiplikationsfaktor SE417145B (sv)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE7904711A SE417145B (sv) 1979-05-30 1979-05-30 Lavinfotodiodanordning med en lavindiod och med organ for styrning av diodens multiplikationsfaktor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE7904711A SE417145B (sv) 1979-05-30 1979-05-30 Lavinfotodiodanordning med en lavindiod och med organ for styrning av diodens multiplikationsfaktor

Publications (2)

Publication Number Publication Date
SE7904711L true SE7904711L (sv) 1980-12-01
SE417145B SE417145B (sv) 1981-02-23

Family

ID=20338174

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7904711A SE417145B (sv) 1979-05-30 1979-05-30 Lavinfotodiodanordning med en lavindiod och med organ for styrning av diodens multiplikationsfaktor

Country Status (1)

Country Link
SE (1) SE417145B (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
JP7455520B2 (ja) 2018-12-12 2024-03-26 浜松ホトニクス株式会社 光検出装置
JPWO2020121857A1 (ja) * 2018-12-12 2021-11-04 浜松ホトニクス株式会社 光検出装置及び光検出装置の製造方法

Also Published As

Publication number Publication date
SE417145B (sv) 1981-02-23

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