SE7904711L - LAVINPOTODIOD - Google Patents
LAVINPOTODIODInfo
- Publication number
- SE7904711L SE7904711L SE7904711A SE7904711A SE7904711L SE 7904711 L SE7904711 L SE 7904711L SE 7904711 A SE7904711 A SE 7904711A SE 7904711 A SE7904711 A SE 7904711A SE 7904711 L SE7904711 L SE 7904711L
- Authority
- SE
- Sweden
- Prior art keywords
- lavinpotodiod
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE7904711A SE417145B (en) | 1979-05-30 | 1979-05-30 | Avalanche photodiode arrangement with an avalanche diode and with element for controlling the multiplication factor of the diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE7904711A SE417145B (en) | 1979-05-30 | 1979-05-30 | Avalanche photodiode arrangement with an avalanche diode and with element for controlling the multiplication factor of the diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7904711L true SE7904711L (en) | 1980-12-01 |
| SE417145B SE417145B (en) | 1981-02-23 |
Family
ID=20338174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7904711A SE417145B (en) | 1979-05-30 | 1979-05-30 | Avalanche photodiode arrangement with an avalanche diode and with element for controlling the multiplication factor of the diode |
Country Status (1)
| Country | Link |
|---|---|
| SE (1) | SE417145B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020121858A1 (en) | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Photodetector and method for manufacturing photodetector |
| WO2020121852A1 (en) | 2018-12-12 | 2020-06-18 | 浜松ホトニクス株式会社 | Photodetector |
| JP7454917B2 (en) * | 2018-12-12 | 2024-03-25 | 浜松ホトニクス株式会社 | light detection device |
| US11513002B2 (en) | 2018-12-12 | 2022-11-29 | Hamamatsu Photonics K.K. | Light detection device having temperature compensated gain in avalanche photodiode |
| US12113088B2 (en) | 2018-12-12 | 2024-10-08 | Hamamatsu Photonics K.K. | Light detection device |
| US20220020786A1 (en) * | 2018-12-12 | 2022-01-20 | Hamamatsu Photonics K.K. | Photodetector and method for manufacturing photodetector |
-
1979
- 1979-05-30 SE SE7904711A patent/SE417145B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE417145B (en) | 1981-02-23 |
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