SE523509C2 - Förfarande och kopplingsanordning för pulsformig inmatning av energi i magnetronurladdningar - Google Patents
Förfarande och kopplingsanordning för pulsformig inmatning av energi i magnetronurladdningarInfo
- Publication number
- SE523509C2 SE523509C2 SE0100753A SE0100753A SE523509C2 SE 523509 C2 SE523509 C2 SE 523509C2 SE 0100753 A SE0100753 A SE 0100753A SE 0100753 A SE0100753 A SE 0100753A SE 523509 C2 SE523509 C2 SE 523509C2
- Authority
- SE
- Sweden
- Prior art keywords
- source
- current
- ignition
- magnetron
- voltage
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Microwave Tubes (AREA)
- Generation Of Surge Voltage And Current (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10015244A DE10015244C2 (de) | 2000-03-28 | 2000-03-28 | Verfahren und Schaltungsanordnung zur pulsförmigen Energieeinspeisung in Magnetronentladungen |
Publications (3)
Publication Number | Publication Date |
---|---|
SE0100753D0 SE0100753D0 (sv) | 2001-03-07 |
SE0100753L SE0100753L (sv) | 2001-09-29 |
SE523509C2 true SE523509C2 (sv) | 2004-04-27 |
Family
ID=7636601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0100753A SE523509C2 (sv) | 2000-03-28 | 2001-03-07 | Förfarande och kopplingsanordning för pulsformig inmatning av energi i magnetronurladdningar |
Country Status (3)
Country | Link |
---|---|
US (1) | US6522076B2 (de) |
DE (1) | DE10015244C2 (de) |
SE (1) | SE523509C2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6808607B2 (en) * | 2002-09-25 | 2004-10-26 | Advanced Energy Industries, Inc. | High peak power plasma pulsed supply with arc handling |
US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
DE10312549B3 (de) | 2003-03-21 | 2004-08-26 | Hüttinger Elektronik Gmbh + Co. Kg | Gasentladungsprozess-Spannungsversorgungseinheit |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US9123508B2 (en) * | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
US7305311B2 (en) * | 2005-04-22 | 2007-12-04 | Advanced Energy Industries, Inc. | Arc detection and handling in radio frequency power applications |
US7514935B2 (en) * | 2006-09-13 | 2009-04-07 | Advanced Energy Industries, Inc. | System and method for managing power supplied to a plasma chamber |
US8217299B2 (en) * | 2007-02-22 | 2012-07-10 | Advanced Energy Industries, Inc. | Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch |
EP1995818A1 (de) | 2007-05-12 | 2008-11-26 | Huettinger Electronic Sp. z o. o | Schaltung und Verfahren zur Reduzierung der in einer Zuleitungsinduktivität gespeicherten elektrischen Energie zur schnellen Plasmalichtbogenlöschung |
US8133359B2 (en) * | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
US9039871B2 (en) | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
US8044594B2 (en) * | 2008-07-31 | 2011-10-25 | Advanced Energy Industries, Inc. | Power supply ignition system and method |
WO2010012293A1 (de) | 2008-08-01 | 2010-02-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Anordnung und verfahren zur erzeugung eines plasmas mit definiertem und stabilem ionisierungszustand |
US8395078B2 (en) * | 2008-12-05 | 2013-03-12 | Advanced Energy Industries, Inc | Arc recovery with over-voltage protection for plasma-chamber power supplies |
PL2648209T3 (pl) | 2009-02-17 | 2018-06-29 | Solvix Gmbh | Urządzenie zasilające do obróbki plazmowej |
US8552665B2 (en) | 2010-08-20 | 2013-10-08 | Advanced Energy Industries, Inc. | Proactive arc management of a plasma load |
DE102011086551B4 (de) * | 2011-11-17 | 2023-02-23 | Siemens Healthcare Gmbh | Flexible Impedanzanpassung für einen pulsstromversorgten Mikrowellengenerator |
US10566177B2 (en) * | 2016-08-15 | 2020-02-18 | Applied Materials, Inc. | Pulse shape controller for sputter sources |
US11476145B2 (en) * | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN113564540B (zh) * | 2021-07-30 | 2023-10-03 | 江苏徐工工程机械研究院有限公司 | 电弧离子镀膜装置及镀膜方法 |
CN114464514B (zh) * | 2021-11-18 | 2023-04-07 | 电子科技大学 | 一种锁频锁相结构及其构成的磁控管结构 |
CN114823251B (zh) * | 2022-04-08 | 2023-04-14 | 电子科技大学 | 一种基于分支馈电结构锁频锁相的轴向级联相对论磁控管 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3538494A1 (de) * | 1985-10-30 | 1987-05-07 | Boehringer Andreas | Aus einer gleichspannungsquelle gespeiste elektrische schaltungsanordnung zur versorgung eines verbraucherzweipols mit eingepraegtem, jedoch unterbrechbarem gleichstrom oder eingepraegtem, jedoch unterbrechbarem, blockfoermigem wechselstrom mit einstellbarer begrenzung der spannungen am verbraucherzweipol und an den verwendeten elektronischen einwegschaltern |
IL78810A (en) * | 1986-05-16 | 1990-11-29 | Israel Aircraft Ind Ltd | Current pulse generator |
DD252205B5 (de) * | 1986-09-01 | 1993-12-09 | Fraunhofer Ges Forschung | Zerstaeubungseinrichtung |
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
DE3802852A1 (de) * | 1988-02-01 | 1989-08-03 | Leybold Ag | Einrichtung fuer die beschichtung eines substrats mit einem material, das aus einem plasma gewonnen wird |
DE3942560C2 (de) * | 1989-12-22 | 1996-05-02 | Dressler Hochfrequenztechnik G | Hochfrequenz-Generator für einen Plasma erzeugenden Verbraucher |
DE4042287C2 (de) * | 1990-12-31 | 1999-10-28 | Leybold Ag | Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff |
DE4106770C2 (de) * | 1991-03-04 | 1996-10-17 | Leybold Ag | Verrichtung zum reaktiven Beschichten eines Substrats |
DE9109503U1 (de) * | 1991-07-31 | 1991-10-17 | Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier | Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik |
DE4233720C2 (de) * | 1992-10-07 | 2001-05-17 | Leybold Ag | Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen |
US5718813A (en) * | 1992-12-30 | 1998-02-17 | Advanced Energy Industries, Inc. | Enhanced reactive DC sputtering system |
US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
DE4438463C1 (de) * | 1994-10-27 | 1996-02-15 | Fraunhofer Ges Forschung | Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen |
DE19506515C1 (de) * | 1995-02-24 | 1996-03-07 | Fraunhofer Ges Forschung | Verfahren zur reaktiven Beschichtung |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
DE19702187C2 (de) * | 1997-01-23 | 2002-06-27 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zum Betreiben von Magnetronentladungen |
CN1223698C (zh) * | 1997-02-20 | 2005-10-19 | 芝浦机械电子装置股份有限公司 | 用于溅射的电源装置和使用该装置的溅射设备 |
-
2000
- 2000-03-28 DE DE10015244A patent/DE10015244C2/de not_active Expired - Fee Related
-
2001
- 2001-03-07 SE SE0100753A patent/SE523509C2/sv not_active IP Right Cessation
- 2001-03-27 US US09/817,346 patent/US6522076B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE10015244C2 (de) | 2002-09-19 |
US20020047539A1 (en) | 2002-04-25 |
SE0100753D0 (sv) | 2001-03-07 |
US6522076B2 (en) | 2003-02-18 |
DE10015244A1 (de) | 2001-10-11 |
SE0100753L (sv) | 2001-09-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |