SE443477B - Med ljus tendbar tyristor bestaende av huvud- och en for tendforsterkning integrerad hjelptyristor - Google Patents
Med ljus tendbar tyristor bestaende av huvud- och en for tendforsterkning integrerad hjelptyristorInfo
- Publication number
- SE443477B SE443477B SE7909252A SE7909252A SE443477B SE 443477 B SE443477 B SE 443477B SE 7909252 A SE7909252 A SE 7909252A SE 7909252 A SE7909252 A SE 7909252A SE 443477 B SE443477 B SE 443477B
- Authority
- SE
- Sweden
- Prior art keywords
- zone
- cathode
- thyristor
- main
- base
- Prior art date
Links
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 238000001465 metallisation Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1172578A CH634442A5 (de) | 1978-11-15 | 1978-11-15 | Lichtzuendbarer thyristor. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7909252L SE7909252L (sv) | 1980-05-16 |
| SE443477B true SE443477B (sv) | 1986-02-24 |
Family
ID=4376295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7909252A SE443477B (sv) | 1978-11-15 | 1979-11-08 | Med ljus tendbar tyristor bestaende av huvud- och en for tendforsterkning integrerad hjelptyristor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4343014A (de) |
| JP (1) | JPS5568673A (de) |
| CH (1) | CH634442A5 (de) |
| DE (1) | DE2851303A1 (de) |
| GB (1) | GB2035691B (de) |
| SE (1) | SE443477B (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
| DE3226624A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit |
| DE3226613A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf |
| US5994162A (en) * | 1998-02-05 | 1999-11-30 | International Business Machines Corporation | Integrated circuit-compatible photo detector device and fabrication process |
| US7582917B2 (en) * | 2006-03-10 | 2009-09-01 | Bae Systems Information And Electronic Systems Integration Inc. | Monolithically integrated light-activated thyristor and method |
| DE102007041124B4 (de) * | 2007-08-30 | 2009-06-04 | Infineon Technologies Ag | Thyristor mit verbessertem Einschaltverhalten, Thyristoranordnung mit einem Thyristor, Verfahren zur Herstellung eines Thyristors und einer Thyristoranordnung |
| CN102227005B (zh) * | 2011-06-10 | 2012-07-04 | 中国科学院半导体研究所 | 具有红外响应的表面纳米点硅光电探测器结构的制作方法 |
| CN103367519A (zh) * | 2013-07-05 | 2013-10-23 | 中国科学院半导体研究所 | 一种响应度可调的硅光电探测器及其制作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
| CH567803A5 (de) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
| CH594988A5 (de) * | 1976-06-02 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| CH614811A5 (en) * | 1977-04-15 | 1979-12-14 | Bbc Brown Boveri & Cie | Thyristor |
| SU793421A3 (ru) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Фототиристор |
| DE2739187C2 (de) * | 1977-08-31 | 1981-10-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps |
-
1978
- 1978-11-15 CH CH1172578A patent/CH634442A5/de not_active IP Right Cessation
- 1978-11-27 DE DE19782851303 patent/DE2851303A1/de active Granted
-
1979
- 1979-11-08 SE SE7909252A patent/SE443477B/sv not_active IP Right Cessation
- 1979-11-09 JP JP14452479A patent/JPS5568673A/ja active Granted
- 1979-11-09 GB GB7938906A patent/GB2035691B/en not_active Expired
-
1981
- 1981-03-12 US US06/243,146 patent/US4343014A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2851303C2 (de) | 1988-06-09 |
| GB2035691B (en) | 1983-02-09 |
| US4343014A (en) | 1982-08-03 |
| CH634442A5 (de) | 1983-01-31 |
| DE2851303A1 (de) | 1980-06-12 |
| JPH0116022B2 (de) | 1989-03-22 |
| GB2035691A (en) | 1980-06-18 |
| SE7909252L (sv) | 1980-05-16 |
| JPS5568673A (en) | 1980-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
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