SE438575B - I sidled orienterad halvledaranordning - Google Patents

I sidled orienterad halvledaranordning

Info

Publication number
SE438575B
SE438575B SE7812443A SE7812443A SE438575B SE 438575 B SE438575 B SE 438575B SE 7812443 A SE7812443 A SE 7812443A SE 7812443 A SE7812443 A SE 7812443A SE 438575 B SE438575 B SE 438575B
Authority
SE
Sweden
Prior art keywords
diffusion region
region
diffusion
radius
semiconductor device
Prior art date
Application number
SE7812443A
Other languages
English (en)
Swedish (sv)
Other versions
SE7812443L (sv
Inventor
K Tsukuda
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SE7812443L publication Critical patent/SE7812443L/xx
Publication of SE438575B publication Critical patent/SE438575B/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/735Lateral transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436Lateral thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
SE7812443A 1977-12-05 1978-12-04 I sidled orienterad halvledaranordning SE438575B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14498277A JPS5478092A (en) 1977-12-05 1977-12-05 Lateral semiconductor device

Publications (2)

Publication Number Publication Date
SE7812443L SE7812443L (sv) 1979-06-06
SE438575B true SE438575B (sv) 1985-04-22

Family

ID=15374717

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7812443A SE438575B (sv) 1977-12-05 1978-12-04 I sidled orienterad halvledaranordning

Country Status (7)

Country Link
US (1) US4361846A (fr)
JP (1) JPS5478092A (fr)
DE (1) DE2852402C2 (fr)
FR (1) FR2410880A1 (fr)
GB (1) GB2009508B (fr)
NL (1) NL183860C (fr)
SE (1) SE438575B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0018487B1 (fr) * 1979-03-22 1983-06-29 Kabushiki Kaisha Toshiba Dispositif semiconducteur et procédé pour sa fabrication
JPS57201062A (en) * 1981-06-05 1982-12-09 Nec Corp Semiconductor device
JPS58101459A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 半導体装置
SE443619B (sv) * 1984-03-09 1986-03-03 Z Lyften Prod Ab Vridmomentkennande koppling
WO1985005224A1 (fr) * 1984-05-02 1985-11-21 Bell Telephone Manufacturing Company Naamloze Venn Dispositif et agencement semi-conducteurs
JPH01174633U (fr) * 1988-05-31 1989-12-12
IT220662Z2 (it) * 1990-10-31 1993-10-08 Elasis Sistema Ricerca Fita Nel Mezzogiorno Soc.Consortile P.A. Perfezionamenti alla valvola pilota e alla relativa ancora di comando odi un iniettore elettromagnetico per sistemi di iniezione del combustibile di motori a combustione interna
JP3124085B2 (ja) * 1991-12-02 2001-01-15 沖電気工業株式会社 半導体装置
US5744851A (en) * 1992-01-27 1998-04-28 Harris Corporation Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA906667A (en) * 1972-08-01 W. Ruegg Heinz Semiconductor device having a lateral transistor
US4193836A (en) * 1963-12-16 1980-03-18 Signetics Corporation Method for making semiconductor structure
US3461360A (en) * 1965-06-30 1969-08-12 Ibm Semiconductor devices with cup-shaped regions
US3443173A (en) * 1966-05-17 1969-05-06 Sprague Electric Co Narrow emitter lateral transistor
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
GB1217880A (en) * 1967-10-13 1970-12-31 Rca Corp Lateral transistor with auxiliary control electrode
US3651565A (en) * 1968-09-09 1972-03-28 Nat Semiconductor Corp Lateral transistor structure and method of making the same
NL162511C (nl) * 1969-01-11 1980-05-16 Philips Nv Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling.
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
JPS547438B2 (fr) * 1973-05-14 1979-04-06
US3898483A (en) * 1973-10-18 1975-08-05 Fairchild Camera Instr Co Bipolar memory circuit
US4131809A (en) * 1974-06-17 1978-12-26 U.S. Philips Corporation Symmetrical arrangement for forming a variable alternating-current resistance
US3958264A (en) * 1974-06-24 1976-05-18 International Business Machines Corporation Space-charge-limited phototransistor
US3971060A (en) * 1974-07-12 1976-07-20 Texas Instruments Incorporated TTL coupling transistor
US4099998A (en) * 1975-11-03 1978-07-11 General Electric Company Method of making zener diodes with selectively variable breakdown voltages
US4079403A (en) * 1976-11-01 1978-03-14 Electric Power Research Institute, Inc. Thyristor device with self-protection against breakover turn-on failure
US4228451A (en) * 1978-07-21 1980-10-14 Monolithic Memories, Inc. High resistivity semiconductor resistor device

Also Published As

Publication number Publication date
NL183860C (nl) 1989-02-01
NL7811807A (nl) 1979-06-07
NL183860B (nl) 1988-09-01
US4361846A (en) 1982-11-30
FR2410880B1 (fr) 1984-06-22
DE2852402C2 (de) 1987-02-19
JPS5478092A (en) 1979-06-21
DE2852402A1 (de) 1979-06-07
GB2009508A (en) 1979-06-13
GB2009508B (en) 1982-07-28
JPS5726421B2 (fr) 1982-06-04
SE7812443L (sv) 1979-06-06
FR2410880A1 (fr) 1979-06-29

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